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The Long-term reliability of a chip, encompassing factors like bias temperature instability (BTI), plays a substantial role in the chip's operational efficiency and overall lifespan. Most studies primarily center around performance-related ...

• Bias Temperature Instability (BTI) aging demonstrates substantial benifits concerning spatial power density and temperature.
• Analysis leverages degradation-aware cell libraries for a 10-year aging perspective.
• A Python-based power ...

A major concern in modern SRAMs is the reliability degradation. The increased process variations as well as BTI or HCI phenomena are crucial factors for degrading the reliability of all SRAM blocks, such as the Address Decoders. Over-...

• SRAM Decoders suffer from aging phenomena affecting their performance.
• Aging ...

CMOS technology scaling allows the design of even more complex system but, at the same time, introduces some reliability problems. In particular, aggressively scaled microelectronic technologies are affected by the Bias Temperature Instability (...

In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo device ...

In the past few years, Time-Dependent Variability has become a subject of growing concern in CMOS technologies. In particular, phenomena such as Bias Temperature Instability, Hot-Carrier Injection and Random Telegraph Noise can largely ...

• Complete Reliability-Aware Design flow is presented.
• It includes ...

Bias Temperature Instability (BTI) is one of the most crucial reliability issues in modern CMOS technology. It leads to shift in device parameters, which eventually affect circuit performance. SRAM is a widely used circuit which ...

In this paper, we focus on the TCAD simulation and accurate compact model extraction of the time evolution of statistical variability in conventional (bulk) CMOS transistors, due to bias temperature instability (BTI). The 25-nm physical gate ...

Aging is one of the most crucial reliability issues in recent chip fabrication technologies. Among different causes for aging, ``Bias Temperature Instability'' (BTI) imposes the highest semiconductor degradation rate to processors. ...

Reliability of electronic components is the major concern as the CMOS technology is scaled down especially in mobile computing applications of MPEG video processor design. Scaling CMOS technology leads to increase in power density per unit area in an ...

In this paper we analyze the effect of the Bias Temperature Instability (BTI) aging phenomenon on the delay of deskew buffers employed in high performance microprocessors. Our analysis shows that, during circuit lifetime, the delay induced by BTI on ...

In this article, we will present recent advances in reliability effects such as electromigration on interconnects and Negative/Positive Bias Temperature Instability (N/P BTI) effects on CMOS devices, which are the most important reliability concerns for ...

This work compares the performance and the reliability of recessed-gate AlGaN/GaN MOS-HEMTs with two different gate dielectrics: a single layer of Al2O3 and a bilayer of AlN/Al2O3. Although the normally-OFF operation is well observed in the AlN/Al2O3 ...

In this paper we propose a cross-layer accelerated self-healing (CLASH) system which "repairs" its wearout issues in a physical sense through accelerated and active recovery, by which wearout can be reversed while actively applying several accelerated ...

Knowledge organization systems (KOS) can use different types of hierarchical relations: broader generic (BTG), broader partitive (BTP), and broader instantial (BTI). The latest ISO standard on thesauri (ISO 25964) has formalized these relations in a ...

Microprocessors fabricated at nanoscale nodes are exposed to accelerated transistor aging due to bias temperature instability and hot carrier injection. As a result, device delays increase over time, reducing the mean time to failure (MTTF) and hence ...

Display Omitted BTI Reliability in nanowire devices.NBTI vs. oxide field from CV measurement.Electrostatic simulations of several trigate devices.Dit characterization to determine sidewall influence.Gate stack influence on both PBTI and NBTI. In this ...

Degradation of the threshold voltage in CMOS transistors affects the performance of analog circuits over time. In order to meet set target specifications, the influence of these degradation modes needs to be considered and compensated during the design ...

Aging induced degradation mechanisms occurring in digital circuits are of a greater importance in the latest technologies. Monotonic degradation such as Bias Temperature Instability (BTI) or Hot Carrier Injection (HCI) but also sudden degradation such ...

In this paper we postulate that future electronics systems will use sleep time as an active recovery period essential for their overall performance. Our hypothesis is that by explicitly controlling the ratio of sleep vs. active and sleep conditions (...

Rising incidences of counterfeit chips in the supply chain have posed a serious threat to the semiconductor industry. Recycling of used chips constitutes a major form of counterfeiting attacks. If undetected, they can lead to serious consequences ...