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On process-aware 1-D standard cell design

Published: 18 January 2010 Publication History

Abstract

When VLSI technology scales down to sub-40nm process node, systematic variation introduced by the lithography is a persistent challenge to the manufacturability. The limitation of the resolution enhancement technologies (RETs) forces people to adopt a regular cell design methodology. In this paper, targeted on 1--D cell design, we use simulation data to analyze the relationship between the line-end gap distribution and printability. Based on the gap distribution preferences, an optimal algorithm is provided to efficiently extend the line ends and insert dummies, which will significantly improve the gap distribution and help printability. Experimental results on 45nm and 32nm processes show that significant improvement can be obtained on edge placement error (EPE).

References

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Chang, S., Blatchford, J., Prins, S., Jessen, S., Dam, T., Xiao, G., Pang, L., and Gleason, B. Exploration of complex metal 2d design rules using inverse lithography. V. K. Singh and M. L. Rieger, Eds., vol. 7275, SPIE, p. 72750D.
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El-Moselhy, T., Elfadel, I., and Daniel, L. A capacitance solver for incremental variation-aware extraction. ICCAD 2008 (Nov. 2008), 662--669.
[3]
Greenway, R. T., Hendel, R., Jeong, K., Kahng, A. B., Petersen, J. S., Rao, Z., and Smayling, M. C. Interference assisted lithography for patterning of 1d grid-ded design. F. M. Schellenberg and B. M. L. Fontaine, Eds., vol. 7271, SPIE, p. 72712U.
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Kheterpal, V., Rovner, V., Hersan, T. G., Motiani, D., Takegawa, Y., Strojwas, A. J., and Pileggi, L. Design methodology for ic manufacturability based on regular logic-bricks. In DAC '05: Proceedings of the 42nd annual conference on Design automation (New York, NY, USA, 2005), ACM, pp. 353--358.
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Liebmann, L., Pileggi, L., Hibbeler, J., Rovner, V., Jhaveri, T., and Northrop, G. Simplify to survive: prescriptive layouts ensure profitable scaling to 32nm and beyond. V. K. Singh and M. L. Rieger, Eds., vol. 7275, SPIE, p. 72750A.
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Smayling, M. C., Bencher, C., Chen, H. D., Dai, H., and Duane, M. P. Apf pitch-halving for 22nm logic cells using gridded design rules. V. K. Singh and M. L. Rieger, Eds., vol. 6925, SPIE, p. 69251E.
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Taylor, B., and Pileggi, L. Exact combinatorial optimization methods for physical design of regular logic bricks. In DAC '07: Proceedings of the 44th annual conference on Design automation (New York, NY, USA, 2007), ACM, pp. 344--349.

Cited By

View all
  • (2017)Under-the-Cell Routing to Improve ManufacturabilityProceedings of the Great Lakes Symposium on VLSI 201710.1145/3060403.3060428(125-130)Online publication date: 10-May-2017
  • (2016)Cut-hole layout decomposition and synthesis to reduce the effect of edge-placement errorsMicroelectronic Engineering10.1016/j.mee.2016.03.048155:C(107-113)Online publication date: 2-Apr-2016
  • (2015)Standard Cell Layout Regularity and Pin Access Optimization Considering Middle-of-LineProceedings of the 25th edition on Great Lakes Symposium on VLSI10.1145/2742060.2742084(289-294)Online publication date: 20-May-2015
  • Show More Cited By

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cover image ACM Conferences
ASPDAC '10: Proceedings of the 2010 Asia and South Pacific Design Automation Conference
January 2010
920 pages
ISBN:9781605588377

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IEEE Press

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Published: 18 January 2010

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Overall Acceptance Rate 466 of 1,454 submissions, 32%

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Cited By

View all
  • (2017)Under-the-Cell Routing to Improve ManufacturabilityProceedings of the Great Lakes Symposium on VLSI 201710.1145/3060403.3060428(125-130)Online publication date: 10-May-2017
  • (2016)Cut-hole layout decomposition and synthesis to reduce the effect of edge-placement errorsMicroelectronic Engineering10.1016/j.mee.2016.03.048155:C(107-113)Online publication date: 2-Apr-2016
  • (2015)Standard Cell Layout Regularity and Pin Access Optimization Considering Middle-of-LineProceedings of the 25th edition on Great Lakes Symposium on VLSI10.1145/2742060.2742084(289-294)Online publication date: 20-May-2015
  • (2012)Impact of lithography retargeting process on low level interconnect in 20nm technologyProceedings of the International Workshop on System Level Interconnect Prediction10.1145/2347655.2347659(3-10)Online publication date: 3-Jun-2012
  • (2011)Mask cost reduction with circuit performance consideration for self-aligned double patterningProceedings of the 16th Asia and South Pacific Design Automation Conference10.5555/1950815.1950965(787-792)Online publication date: 25-Jan-2011

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