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CERN Document Server 2,021 записей найдено  1 - 10следующийконец  перейти к записи: Поиск длился 0.18 секунд. 
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Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles / Makarenko, L F (Belarus State U., Minsk (main)) ; Moll, M (CERN) ; Evans-Freeman, J H (Canterbury Christ Church U. Coll.) ; Lastovski, S B (Scientific-Practical Materials Research Centre NAS of Belarus) ; Murin, L I (Scientific-Practical Materials Research Centre NAS of Belarus) ; Korshunov, F P (Scientific-Practical Materials Research Centre NAS of Belarus)
New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. [...]
2011 - 4 p. - Published in : Physica B 407 (2012) 3016-3019
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2.
(91)
DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon / Makarenko, L F (Belarus State U.) ; Korshunov, F P (Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus) ; Lastovskii, Stanislav B (Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus) ; Murin, L I (Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus) ; Moll, Michael (CERN)
DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. [...]
2009 - 6 p. - Published in : Solid State Phenomena 156-158 (2010) 155-160
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3.
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Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures / Makarenko, L F (Belarus State U.) ; Lastovski, S B (Inst. Power Eng. Prob., Minsk) ; Korshunov, F P (Inst. Power Eng. Prob., Minsk) ; Murin, L I (Inst. Power Eng. Prob., Minsk) ; Moll, M (CERN)
It has been revealed that self-interstitials formed under low intensity electron irradiationin high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkelpair sinsilicon can be stable at temperatures of about or higher than 100K. [...]
2009 - Published in : Physica B 404 (2009) 4561-4564
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Reactions of interstitial carbon with impurities in silicon particle detectors / Makarenko, L F (Belarus State U.) ; Moll, M (CERN) ; Korshunov, F P (IFTTP, Minsk) ; Lastovski, S B (IFTTP, Minsk)
We present deep level transient spectroscopy (DLTS) data measured on very high resistivity $n$-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. [...]
2007 - 6 p. - Published in : J. Appl. Phys. 101 (2007) 113537
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Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon / Makarenko, Leonid F (Belarus State U.) ; Lastovski, Stanislav B (BSU, Minsk) ; Yakushevich, Hanna S (BSU, Minsk) ; Gaubas, Eugenijus (Vilnius U.) ; Pavlov, Jevgenij (Vilnius U.) ; Kozlovski, Vitali V (St. Petersburg State U.) ; Moll, Michael (CERN) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
The influence of the injection of minority charge carriers on the formation of adivalent bistable defect (DBH) having two energy levels of $E_v + 0.44$ eV and $E_v + 0.53$ eV in its metastable configuration is investigated. Using forward cur-rent injection, the formation temperature of this defect in p-type silicon can belowered by about 50°C. [...]
2019 - Published in : Phys. Status Solidi A 216 (2019) 1900354
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Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen / Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Yakushevich, H S (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. [...]
2018 - 7 p. - Published in : J. Appl. Phys. 123 (2018) 161576
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Microdefects And Self-interstitial Diffusion In Crystalline Silicon / Knowlton, W B
LBNL-41865. - 1998.
Records from U.S. DOE Office of Scientific and Technical Information
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8.
(16)
Tetrahedral-site versus hexagonal-site self-interstitial in silicon / Boguslawski, P ; Papp, G ; Baldereschi, A
SISSA-83-63. - 1983. - 13 p.
CERN library copies
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9.
(13)
Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n$^+$–p structures / Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Korshunov, F P (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Abrosimov, N V (Unlisted, DE)
New findings on the formation and annealing of interstitial boron-interstitial oxygen complex ($\rm{B_iO_i}$) in p-type silicon are presented. Different types of n+−p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. [...]
2015 - 4 p. - Published in : AIP Conf. Proc. 1583 (2015) 123-126
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Structure and kinetics of vacancies and self-interstitials in ferromagnetic Fe : an approach using $^{57}$Mn $\rightarrow ^{57}$Fe Moessbauer spectroscopy / Fanciulli, M ; Fedosseev, V ; Mishin, V I ; Müller, S ; Sielemann, R (spokesperson) ; Weyer, G ; Burchard, A (contact person)
CERN-ISC-98-3 ; ISC-P-97. - 1998. - 6 p.
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