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CERN Document Server 2,008 записей найдено  1 - 10следующийконец  перейти к записи: Поиск длился 0.28 секунд. 
1.
(100)
Microdefects And Self-interstitial Diffusion In Crystalline Silicon / Knowlton, W B
LBNL-41865. - 1998.
Records from U.S. DOE Office of Scientific and Technical Information
Подробная запись - Подобные записи
2.
(91)
Tetrahedral-site versus hexagonal-site self-interstitial in silicon / Boguslawski, P ; Papp, G ; Baldereschi, A
SISSA-83-63. - 1983. - 13 p.
CERN library copies
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3.
(89)
Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles / Makarenko, L F (Belarus State U., Minsk (main)) ; Moll, M (CERN) ; Evans-Freeman, J H (Canterbury Christ Church U. Coll.) ; Lastovski, S B (Scientific-Practical Materials Research Centre NAS of Belarus) ; Murin, L I (Scientific-Practical Materials Research Centre NAS of Belarus) ; Korshunov, F P (Scientific-Practical Materials Research Centre NAS of Belarus)
New findings on the self-interstitial migration in p-type silicon are presented. They are based on experimental studies of the formation kinetics of defects related to interstitial carbon after irradiation with alpha particles. [...]
2011 - 4 p. - Published in : Physica B 407 (2012) 3016-3019
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4.
(53)
Structure and kinetics of vacancies and self-interstitials in ferromagnetic Fe : an approach using $^{57}$Mn $\rightarrow ^{57}$Fe Moessbauer spectroscopy / Fanciulli, M ; Fedosseev, V ; Mishin, V I ; Müller, S ; Sielemann, R (spokesperson) ; Weyer, G ; Burchard, A (contact person)
CERN-ISC-98-3 ; ISC-P-97. - 1998. - 6 p.
Access to fulltext document - Access to fulltext document - CERN library copies
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5.
(49)
Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures / Makarenko, L F (Belarus State U.) ; Lastovski, S B (Inst. Power Eng. Prob., Minsk) ; Korshunov, F P (Inst. Power Eng. Prob., Minsk) ; Murin, L I (Inst. Power Eng. Prob., Minsk) ; Moll, M (CERN)
It has been revealed that self-interstitials formed under low intensity electron irradiationin high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkelpair sinsilicon can be stable at temperatures of about or higher than 100K. [...]
2009 - Published in : Physica B 404 (2009) 4561-4564
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6.
(36)
DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon / Makarenko, L F (Belarus State U.) ; Korshunov, F P (Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus) ; Lastovskii, Stanislav B (Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus) ; Murin, L I (Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus) ; Moll, Michael (CERN)
DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been performed. It has been found that silicon self-interstitials have very low mobility even at room temperature in p-Si, but become extremely mobile under elec-tron injection. [...]
2009 - 6 p. - Published in : Solid State Phenomena 156-158 (2010) 155-160
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7.
(35)
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen / Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Yakushevich, H S (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. [...]
2018 - 7 p. - Published in : J. Appl. Phys. 123 (2018) 161576
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8.
(32)
 Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys / Frank, Winstitute et al. - ISOLDE.
Approved: 13 April 2000.-
Status: Finished
Experiment: IS380
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9.
(18)
 Diffusion in Intrinsic and Highly Doped III-V Semiconductors / Mehrer, Hinstitute et al. - ISOLDE.
Approved: 12 June 1997.-
Status: Finished
Experiment: IS362
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10.
(16)
Diffusion of Implanted 195Au Radiotracer Atoms in Amorphous Silicon under Irradiation with 1 Mev-N+ Ions / Voss, T (Stuttgart, Max Planck Inst.) ; Scharwaechter, P (Stuttgart, Max Planck Inst.) ; Frank, W (Stuttgart, Max Planck Inst. ; CERN) /ISOLDE Collaboration
The diffusion of implanted $^{195}$Au in Au-doped amorphous Si was studied, partly under N$^+$-irradiation by means of a radiotracer technique, in which the serial sectioning of the specimens was done by Ar$^+$-beam sputtering. It was found that high implantation doses in combination with great diffusion lengths give rise to complicated shapes of the diffusion profiles. [...]
2001 - 8 p. - Published in : Defect Diff. Forum 194-199 (2001) 659-666
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