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Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
/ Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. [...]
arXiv:2412.07606.
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Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
/ Iacobucci, G. (Geneva U.) ; Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Saidi, J. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) et al.
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. [...]
arXiv:2208.11019.-
2022-10-25 - 22 p.
- Published in : JINST 17 (2022) P10040
Fulltext: document - PDF; 2208.11019 - PDF;
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Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.-
2024-04-24 - 11 p.
- Published in : JINST 19 (2024) P04029
Fulltext: 2401.01229 - PDF; Publication - PDF;
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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
/ Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) et al.
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. [...]
arXiv:2112.08999.-
2022-02-10 - 17 p.
- Published in : JINST 17 (2022) P02019
Fulltext: 2112.08999 - PDF; document - PDF;
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20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer
/ Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (Leibniz U., Hannover) et al.
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2301.12244.-
2023-03-28 - 16 p.
- Published in : JINST
Fulltext: 2301.12244 - PDF; Publication - PDF;
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Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
/ Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) et al.
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. [...]
arXiv:2404.12885.-
2024-07-29 - 15 p.
- Published in : JINST 19 (2024) P07036
Fulltext: 2404.12885 - PDF; Publication - PDF;
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Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Zambito, S. (Geneva U.) ; Nakamura, K. (KEK, Tsukuba) et al.
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2310.19398.-
2024-01-15 - 13 p.
- Published in : JINST 19 (2024) P01014
Fulltext: 2310.19398 - PDF; publication - PDF;
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Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
/ Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Gurimskaya, Y. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Rücker, H. (IHP, Frankfurt) ; Trusch, A. (IHP, Frankfurt) ; Valerio, P. (Geneva U.) et al.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. [...]
arXiv:2206.07952.-
2022-10-20 - 15 p.
- Published in : JINST 17 (2022) P10032
Fulltext: 2206.07952 - PDF; Publication - PDF;
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
/ Benoit, M. (Geneva U.) ; Braccini, S. (Bern U.) ; Casse, G. (Liverpool U.) ; Chen, H. (Brookhaven) ; Chen, K. (Brookhaven) ; Bello, F.A.Di (Geneva U.) ; Ferrere, D. (Geneva U.) ; Golling, T. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iacobucci, G. (Geneva U.) et al.
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. [...]
arXiv:1611.02669.-
2018-02-08 - 13 p.
- Published in : JINST 13 (2018) P02011
Fulltext: pdf - PDF; 10.1088_1748-0221_13_02_P02011 - PDF; arXiv:1611.02669_2 - PDF; Preprint: PDF; External link: Preprint
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
/ Anders, J. (U. Bern, AEC) ; Benoit, M. (Geneva U.) ; Braccini, S. (U. Bern, AEC) ; Casanova, R. (Barcelona, IFAE) ; Chen, H. (Brookhaven) ; Chen, K. (Brookhaven) ; Di Bello, F.A. (Geneva U.) ; Fehr, A. (U. Bern, AEC) ; Ferrere, D. (Geneva U.) ; Forshaw, D. (U. Bern, AEC) et al.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital..
arXiv:1807.09553.-
2018-10-01 - 14 p.
- Published in : JINST 13 (2018) P10004
Fulltext: fulltext1683864 - PDF; 1807.09553 - PDF; Anders_2018_J._Inst._13_P10004 - PDF; Fulltext from Publisher: PDF;
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