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Measurements of surface and bulk radiation damage effects in silicon detectors for Phase-2 CMS Outer Tracker
/ Mariani, Valentina (INFN, Perugia ; Perugia U.) ; Moscatelli, Francesco (INFN, Perugia ; Perugia U.) ; Morozzi, Arianna (INFN, Perugia) ; Passeri, Daniele (INFN, Perugia ; Perugia U.) ; Mattiazzo, Serena (INFN, Padua) ; Bergauer, Thomas (Vienna, OAW) ; Dragicevic, Marko (Vienna, OAW) ; Hinger, Viktoria (Vienna, OAW) ; Dierlamm, Alexander (KIT, Karlsruhe)
/CMS Collaboration
In this work we address the effects of bulk and surface damages on detectors fabricated by Hamamatsu on standard float zone (FZ) p-type material with an active thickness of 290 $\mu$m or thinned to 240 $\mu$m.
In order to disentangle the effects of the two main radiation damage mechanisms, ionization effects and atomic displacement, the structures underwent two types of radiation: X-ray with doses from 0.05 to 70 Mrad (SiO$_2$) and neutron in the range of 1$-$10 $\times$ 10$^{14}$ n$_{eq}$/cm$^2$ 1 MeV equivalent.
The combined surface and bulk damage could be investigated in structures that underwent both types of irradiation.
A wide set of measurements has been carried out on the test structures for a complete characterization..
CMS-CR-2020-049.-
Geneva : CERN, 2020 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 980 (2020) 164423
Fulltext: PDF;
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164423
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2.
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Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors
/ Petasecca, M (Perugia U. ; INFN, Perugia) ; Moscatelli, F (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, D (Perugia U. ; INFN, Perugia) ; Pignatel, G U (Perugia U. ; INFN, Perugia)
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of $1 \times 10^{16} \rm{n}/cm^2$. In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. [...]
2006 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 53 (2006) 2971-2976
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3.
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Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
/ Moscatelli, F (IMM, Bologna ; INFN, Perugia) ; Passeri, D (U. Perugia (main) ; INFN, Perugia) ; Morozzi, A (U. Perugia (main) ; INFN, Perugia) ; Mendicino, R (U. Trento (main) ; TIFPA-INFN, Trento) ; Dalla Betta, G F (U. Trento (main) ; TIFPA-INFN, Trento) ; Bilei, G M (INFN, Perugia)
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). [...]
AIDA-2020-PUB-2016-007; arXiv:1611.10138.-
Geneva : CERN, 2016 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 63 (2016) 2716-2723
Preprint: PDF; External link: Preprint
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4.
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5.
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Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD
/ Passeri, D. (Perugia U. ; INFN, Perugia) ; Moscatelli, F. (IMM, Bologna ; INFN, Perugia) ; Morozzi, A. (Perugia U. ; INFN, Perugia) ; Bilei, G.M. (INFN, Perugia)
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0 1016 1MeV equivalent neutrons/cm2). [...]
arXiv:1611.10224.-
Geneva : CERN, 2016 - 2 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 824 (2016) 443-445
Preprint: arXiv:1611.10224 - PDF; AIDA-2020-PUB-2016-006 - PDF; External link: Preprint
In : Frontier Detectors for Frontier Physics: 13th Pisa Meeting on Advanced Detectors, La Biodola, Isola D'elba, Italy, 24 - 30 May 2015, pp.443-445
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6.
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Surface damage characterization of FBK devices for High Luminosity LHC (HL-LHC) operations
/ Moscatelli, F (INFN, Perugia ; Perugia U.) ; Passeri, D (INFN, Perugia ; Perugia U.) ; Morozzi, A (INFN, Perugia) ; Dalla Betta, G -F (Trento U. ; TIFPA-INFN, Trento) ; Mattiazzo, S (Padua U. ; INFN, Padua) ; Bomben, M (Paris U., VI-VII) ; Bilei, G M (INFN, Perugia)
The very high fluences (e.g. up to $2 \times 10^{16} 1$ MeV $n_{eq}/cm^{2}$) and total ionising doses (TID) of the order of 1 Grad, expected at the High Luminosity LHC (HL-LHC), impose new challenges for the design of effective, radiation resistant detectors. [...]
2017 - 11 p.
- Published in : JINST 12 (2017) P12010
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Numerical simulation of radiation damage effects in p-type silicon detectors
/ Petasecca, M ; Moscatelli, F ; Passeri, D ; Pignatel, G U ; Scarpello, C
2006
- Published in : Nucl. Instrum. Methods Phys. Res., A 563 (2006) 192-195
In : 7th International Workshop on Radiation Imaging Detectors, Grenoble, France, 4 - 7 Jul 2005, pp.192-195
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8.
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A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
/ Petasecca, Marco (Perugia U. ; INFN, Perugia) ; Moscatelli, Francesco (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, Daniele (Perugia U. ; INFN, Perugia) ; Pignatel, Giorgio Umberto (Perugia U. ; INFN, Perugia) ; Scarpello, Carlo (Perugia U.) ; Caprai, Giovanni (Perugia U.)
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. [...]
2005 - 4 p.
- Published in : 10.1109/NSSMIC.2005.1596601
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1490-1493
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10.
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Radiation hardness of high resistivity n- and p-type magnetic Czochralski silicon
/ Segneri, G (Pisa U. ; INFN, Pisa) ; Borrello, L (Pisa U. ; INFN, Pisa) ; Boscardin, M (ITC-IRST, Trento) ; Bruzzi, M (INFN, Florence ; U. Florence (main)) ; Creanza, D (Bari U. ; INFN, Bari) ; Dalla Betta, G F (ITC-IRST, Trento) ; De Palma, M (Bari U. ; INFN, Bari) ; Focardi, E (INFN, Florence ; U. Florence (main)) ; Macchiolo, A (INFN, Florence ; U. Florence (main) ; Manna, N (Bari U. ; INFN, Bari) et al.
The luminosity upgrade of the CERN Large Hadron Collider (SLHC) imposes severe requirements on the radiation hardness of the tracking systems. The CERN RD50 collaboration as well as the Italian INFN SMART project (fifth commission) are focused on the study of new radiation hard materials and devices in view of this upgrade. [...]
2006 - 4 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 573 (2007) 283-286
In : 7th International Conference on Position-Sensitive Detectors, Liverpool, UK, 9 - 13 Sep 2005, pp.283-286
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