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Comparison of different sensor thicknesses and substrate materials for the monolithic small collection-electrode technology demonstrator CLICTD
/ Dort, Katharina (CERN) ; Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) et al.
Small collection-electrode monolithic CMOS sensors profit from a high signal-to-noise ratio and a small power consumption, but have a limited active sensor volume due to the fabrication process based on thin high-resistivity epitaxial layers. In this paper, the active sensor depth is investigated in the monolithic small collection-electrode technology demonstrator CLICTD. [...]
arXiv:2204.10569.-
2022-10-11 - 11 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1041 (2022) 167413
Fulltext: 1-s2.0-S0168900222007069-main - PDF; 2204.10569 - PDF;
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CLICTD: A monolithic HR-CMOS sensor chip for the CLIC silicon tracker
/ Kremastiotis, I. (CERN ; KIT, Karlsruhe) ; Ballabriga, R. (CERN) ; Dort, K. (CERN ; Giessen U.) ; Egidos, N. (CERN ; Barcelona U.) ; Munker, M. (CERN)
/CLICdp Collaboration
The CLIC Tracker Detector (CLICTD) is a monolithic pixelated sensor chip produced in a $180$ nm imaging CMOS process built on a high-resistivity epitaxial layer. The chip, designed in the context of the CLIC tracking detector study, comprises a matrix of ${16\times128}$ elongated pixels, each measuring ${300\times30}$ $\mu$m$^2$. [...]
arXiv:2004.02537.-
SISSA, 2020-03-11 - 5 p.
- Published in : PoS: TWEPP2019 (2019) , pp. 039
Fulltext: 2004.02537 - PDF; PoS(TWEPP2019)039 - PDF;
In : TWEPP 2019 Topical Workshop on Electronics for Particle Physics, Santiago De Compostela, Spain, 2 - 6 Sep 2019, pp.039
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4.
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Timing performance of radiation hard MALTA monolithic Pixel sensors
/ Gustavino, G. (CERN) ; Allport, P. (Birmingham U.) ; Asensi, I. (CERN) ; Berlea, D.V. (DESY, Zeuthen) ; Bortoletto, D. (U. Oxford (main)) ; Buttar, C. (Glasgow U.) ; Dachs, F. (CERN) ; Dao, V. (CERN) ; Denizli, H. (Abant Izzet Baysal U.) ; Dobrijevic, D. (CERN ; U. Zagreb (main)) et al.
The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size $36.4 \times 36.4~\mu\text{m}^2$ with a $3~\mu\text{m}^2$ electrode size. [...]
arXiv:2209.14676.-
2023-03-15 - 10 p.
- Published in : JINST
Fulltext: 2209.14676 - PDF; document - PDF;
In : 23rd International Workshop for Radiation Imaging Detectors, Riva Del Garda, It, 26 - 30 Jun 2022, pp.C03011
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Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance
/ Munker, Magdalena (CERN) ; Benoit, Mathieu (Geneva U.) ; Dannheim, Dominik (CERN) ; Fenigstein, Amos (Unlisted, IL) ; Kugathasan, Thanushan (CERN) ; Leitner, Tomer (Unlisted, IL) ; Pernegger, Heinz (CERN) ; Riedler, Petra (CERN) ; Snoeys, Walter (CERN)
CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. [...]
arXiv:1903.10190.-
2019-05-15 - 10 p.
- Published in : JINST 14 (2019) C05013
Fulltext: fulltext1726571 - PDF; 1903.10190 - PDF; Fulltext from Publisher: PDF;
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2018), Taipei, Taiwan, 10 - 14 Dec 2018, pp.C05013
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Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
/ Ballabriga, R. (CERN) ; Buschmann, E. (CERN) ; Campbell, M. (CERN) ; Dannheim, D. (CERN) ; Dort, K. (CERN) ; Egidos, N. (CERN ; Barcelona U.) ; Huth, L. (DESY) ; Kremastiotis, I. (CERN) ; Kroger, J. (CERN ; Heidelberg U.) ; Linssen, L. (CERN) et al.
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. [...]
arXiv:2102.04025.-
2021-08-01
- Published in : Nucl. Instrum. Methods Phys. Res., A 1006 (2021) 165396
Fulltext: PDF; Fulltext from publisher: PDF;
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7.
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Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm
/ van Rijnbach, M (CERN ; Oslo U.) ; Allport, P (Birmingham U.) ; Asensi, I (Valencia U.) ; Berdalovic, I (Zagreb U.) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Cardella, R (Geneva U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizli, H (Abant Izzet Baysal U.) et al.
The MALTA family of depleted monolithic pixel sensors produced in TowerJazz 180 nm CMOS technology target radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness >10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$ and time resolution below 2 ns, with uniform charge collection and efficiency across the pixel of size 36.4 × 36.4 µm$^{2}$ with small collection electrode. [...]
2022 - 8 p.
- Published in : JINST 17 (2022) C04034
Fulltext: PDF;
In : TWEPP 2021 Topical Workshop on Electronics for Particle Physics, Online, Online, 20 - 24 Sep 2021, pp.C04034
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Transient Monte Carlo Simulations for the Optimisation and Characterisation of Monolithic Silicon Sensors
/ Ballabriga, Rafael (CERN) ; Braach, Justus (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, Dominik (CERN) ; Dort, Katharina (CERN) ; Huth, Lennart (DESY) ; Kremastiotis, Iraklis (CERN) ; Kröger, Jens (CERN) ; Linssen, Lucie (CERN) et al.
An ever-increasing demand for high-performance silicon sensors requires complex sensor designs that are challenging to simulate and model. The combination of electrostatic finite element simulations with a transient Monte Carlo approach provides simultaneous access to precise sensor modelling and high statistics. [...]
arXiv:2202.03221.-
2022-05-11 - 16 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1031 (2022) 166491
2202.03221: PDF; Fulltext: PDF; Fulltext from publisher: PDF;
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MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
/ Pernegger, H. (CERN) ; Allport, P. (Birmingham U.) ; Berlea, D.V. (DESY, Zeuthen) ; Birman, A. (Technion) ; Bortoletto, D. (Oxford U.) ; Buttar, C. (Glasgow U.) ; Charbon, E. (LPHE, Lausanne) ; Dachs, F. (CERN) ; Dao, V. (CERN) ; Denizli, H. (Abant Izzet Baysal U.) et al.
Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. [...]
arXiv:2301.03912.-
2023-09-13 - 24 p.
- Published in : JINST 18 (2023) P09018
Fulltext: 2301.03912 - PDF; Publication - PDF;
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Test-beam characterisation of the CLICTD technology demonstrator - a small collection electrode High-Resistivity CMOS pixel sensor with simultaneous time and energy measurement
/ Ballabriga Sune, Rafael (CERN) ; Buschmann, Eric (CERN) ; Campbell, Michael (CERN) ; Dannheim, D (CERN) ; Dort, K (CERN) ; Egidos, N (CERN) ; Huth, L (DESY) ; Kremastiotis, I (CERN) ; Kroger, J (CERN) ; Linssen, L (CERN) et al.
The CLIC Tracker Detector (CLICTD) is a monolithic pixel sensor. It is fabricated in a 180 nm CMOS imaging process, modified with an additional deep low-dose n-type implant to obtain full lateral depletion. [...]
CLICdp-Pub-2021-001.-
Geneva : CERN, 2021 - 14.
Fulltext: PDF;
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