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Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Zambito, S. (Geneva U.) ; Nakamura, K. (KEK, Tsukuba) et al.
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2310.19398.-
2024-01-15 - 13 p.
- Published in : JINST 19 (2024) P01014
Fulltext: 2310.19398 - PDF; publication - PDF;
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20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer
/ Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (Leibniz U., Hannover) et al.
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2301.12244.-
2023-03-28 - 16 p.
- Published in : JINST
Fulltext: 2301.12244 - PDF; Publication - PDF;
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Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
/ Iacobucci, G. (Geneva U.) ; Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Saidi, J. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) et al.
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. [...]
arXiv:2208.11019.-
2022-10-25 - 22 p.
- Published in : JINST 17 (2022) P10040
Fulltext: document - PDF; 2208.11019 - PDF;
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Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.-
2024-04-24 - 11 p.
- Published in : JINST 19 (2024) P04029
Fulltext: 2401.01229 - PDF; Publication - PDF;
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Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
/ Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) et al.
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. [...]
arXiv:2404.12885.-
2024-07-29 - 15 p.
- Published in : JINST 19 (2024) P07036
Fulltext: 2404.12885 - PDF; Publication - PDF;
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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
/ Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) et al.
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. [...]
arXiv:2112.08999.-
2022-02-10 - 17 p.
- Published in : JINST 17 (2022) P02019
Fulltext: 2112.08999 - PDF; document - PDF;
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Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
/ Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Gurimskaya, Y. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Rücker, H. (IHP, Frankfurt) ; Trusch, A. (IHP, Frankfurt) ; Valerio, P. (Geneva U.) et al.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. [...]
arXiv:2206.07952.-
2022-10-20 - 15 p.
- Published in : JINST 17 (2022) P10032
Fulltext: 2206.07952 - PDF; Publication - PDF;
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Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
/ Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. [...]
arXiv:2412.07606.
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A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
/ Iacobucci, Giuseppe (Geneva U.) ; Cardarelli, R. (INFN, Rome2) ; Débieux, S. (Geneva U.) ; Di Bello, F.A. (Geneva U.) ; Favre, Y. (Geneva U.) ; Hayakawa, D. (Geneva U.) ; Kaynak, M. (IHP, Frankfurt) ; Nessi, M. (Geneva U. ; CERN) ; Paolozzi, L. (Geneva U.) ; Rücker, H. (IHP, Frankfurt) et al.
A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. [...]
arXiv:1908.09709.-
2019-11-06 - 10 p.
- Published in : JINST 14 (2019) P11008
Fulltext: fulltext1751067 - PDF; 1908.09709 - PDF; Fulltext from Publisher: PDF;
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10.
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
/ Anders, J. (U. Bern, AEC) ; Benoit, M. (Geneva U.) ; Braccini, S. (U. Bern, AEC) ; Casanova, R. (Barcelona, IFAE) ; Chen, H. (Brookhaven) ; Chen, K. (Brookhaven) ; Di Bello, F.A. (Geneva U.) ; Fehr, A. (U. Bern, AEC) ; Ferrere, D. (Geneva U.) ; Forshaw, D. (U. Bern, AEC) et al.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital..
arXiv:1807.09553.-
2018-10-01 - 14 p.
- Published in : JINST 13 (2018) P10004
Fulltext: fulltext1683864 - PDF; 1807.09553 - PDF; Anders_2018_J._Inst._13_P10004 - PDF; Fulltext from Publisher: PDF;
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