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Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade
/ Ristic, Branislav (CERN ; Geneva U.)
/ATLAS CMOS Pixel Collaboration
Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. [...]
arXiv:1602.02909.-
2016-09-21 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 831 (2016) 88-93
Fulltext: PDF; External link: Preprint
In : 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Xi'an, China, 25 - 29 Sep 2015, pp.88-93
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On the determination of the substrate effective doping concentration of irradiated HV-CMOS sensors using an edge-TCT technique based on the Two-Photon-Absorption process
/ García, M Fern (Cantabria Inst. of Phys.) ; Sánchez, J Gonz (Cantabria Inst. of Phys.) ; Jaramillo Echeverría, R (Cantabria Inst. of Phys.) ; Moll, M (CERN ; Gottingen U.) ; Montero, R (Basque U., Bilbao) ; Moya, D (Cantabria Inst. of Phys.) ; Pinto, R Palomo (Seville U.) ; Vila, I (Cantabria Inst. of Phys.)
We introduce a new method based on the transient-current technique (TCT) for the radiation tolerance assessment of an n-in-p junction with a deep n-well on a relatively low-resistivity p-type substrate commonly used for HV-CMOS pixel sensors. The transient-current method here employed uses a femtosecond laser to generate excess carriers via a two-photon-absorption (TPA) process. [...]
2017 - 12 p.
- Published in : JINST 12 (2017) C01038
In : International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2016), Sestri Levante, Italy, 5 - 9 Sep 2016, pp.C01038
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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
/ Terzo, S. (Barcelona, IFAE) ; Benoit, M. (Geneva U.) ; Cavallaro, E. (Barcelona, IFAE) ; Casanova, R. (Barcelona, IFAE) ; Di Bello, F.A. (Geneva U.) ; Förster, F. (Barcelona, IFAE) ; Grinstein, S. (Barcelona, IFAE ; ICREA, Barcelona) ; Iacobucci, G. (Geneva U.) ; Perić, I. (KIT, Karlsruhe) ; Puigdengoles, C. (Barcelona, IFAE) et al.
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. [...]
arXiv:1811.07817.-
2019-02-13 - 21 p.
- Published in : JINST 14 (2019) P02016
Fulltext: PDF;
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Status of HVCMOS Developments for ATLAS
/ Peric, Ivan (KIT) ; Blanco, Roberto (KIT) ; Casanova Mohr, Raimon (IFAE) ; Ehrler, Felix (KIT) ; Guezzi Messaoud, Fadoua (UNIGE) ; Kramer, Christian (KIT) ; Leys, Richard (KIT) ; Prathapan, Mridula (KIT) ; Schimassek, Rudolf (KIT) ; Schoning, Andre (UHEI) et al.
This paper describes the status of the developments made by ATLAS HVCMOS and HVMAPS collaborations. We have proposed two HVCMOS sensor concepts for ATLAS pixels—the capacitive coupled pixel detector (CCPD) and the monolithic detector. [...]
AIDA-2020-PUB-2017-005.-
Geneva : CERN, 2017
- Published in : JINST 12 (2017) C02030
Fulltext: PDF;
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
/ Benoit, M. (Geneva U.) ; Braccini, S. (Bern U.) ; Casse, G. (Liverpool U.) ; Chen, H. (Brookhaven) ; Chen, K. (Brookhaven) ; Bello, F.A.Di (Geneva U.) ; Ferrere, D. (Geneva U.) ; Golling, T. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iacobucci, G. (Geneva U.) et al.
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. [...]
arXiv:1611.02669.-
2018-02-08 - 13 p.
- Published in : JINST 13 (2018) P02011
Fulltext: pdf - PDF; 10.1088_1748-0221_13_02_P02011 - PDF; arXiv:1611.02669_2 - PDF; Preprint: PDF; External link: Preprint
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Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
/ Cavallaro, Emanuele (Barcelona, IFAE) ; Casanova, Raimon (Barcelona, IFAE) ; Förster, Fabian (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Lange, Jörn (Barcelona, IFAE) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Mandić, Igor (Stefan Inst., Ljubljana) ; Puigdengoles, Carles (Barcelona, IFAE) ; Terzo, Stefano (Barcelona, IFAE)
Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). [...]
arXiv:1611.04970.-
2017-01-25 - 11 p.
- Published in : JINST 12 (2017) C01074
Fulltext: PDF; Preprint: PDF; External link: Preprint
In : Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C01074
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High-voltage pixel sensors for ATLAS upgrade
/ Perić, I (Heidelberg U.) ; Kreidl, C (Heidelberg U.) ; Fischer, P (Heidelberg U.) ; Bompard, F (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Clemens, J -C (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Liu, J (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM) ; Rozanov, A (Marseille, CPPM) et al.
The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. [...]
2014 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 765 (2014) 172-176
Elsevier Open Access article: PDF;
In : 9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 2 - 6 Sep 2013, pp.172-176
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