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TCAD Device Simulations of Irradiated Silicon Detectors / Palomo Pinto, Francisco Rogelio (Seville U.) ; Moll, Michael (CERN) ; Schwandt, Jörn (Hamburg U.) ; Villani, E Giulio (Rutherford) ; Gurimskaya, Yana (CERN) ; Millán, Rafael (Seville U.)
The high hadron fluences expected during the HL-LHC programme will damage the silicon detectors. New TCAD simulation models are needed to understand the expected detector behaviour. [...]
SISSA, 2020 - 12 p. - Published in : PoS Vertex2019 (2020) 051 Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.051

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Radiation damage in p-type EPI silicon pad diodes irradiated with different particle types and fluences / Gurimskaya, Yana (CERN) ; Mateu, Isidre (CERN) ; Moll, Michael (CERN) ; Dias De Almeida, Pedro (University of Cantabria) ; Fernandez Garcia, Marcos (University of Cantabria)
AIDA-2020-POSTER-2019-005.- Geneva : CERN, 2019 Fulltext: PDF;

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Recent advances in the development of radiation tolerant silicon detectors for the super-LHC / Moll, Michael (CERN) /RD50
For the luminosity upgrade of the LHC, the sLHC, the tracking systems of the experiments need to be replaced. A main concern is the extreme radiation hardness requirements of up to a 1 MeV neutron equivalent fluence of about $10^{16}\rm{cm}^{-2}$. [...]
2010 - 10 p. - Published in : 10.1142/9789814307529_0018

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Design of a Radiation Hardened Power-On-Reset / López-Morillo, E (U. Sevilla, Dept. Electron. Eng.) ; Palomo, F R (U. Sevilla, Dept. Electron. Eng.) ; Márquez, F (U. Sevilla, Dept. Electron. Eng.) ; Muñoz, F (U. Sevilla, Dept. Electron. Eng.)
In this paper, the design of a power-ON-reset intellectual property (IP) block for the RD53 collaboration, a radiation hardening by design circuit to withstand the High-Luminosity Large Hadron Collider tracker radiation environment, is presented. In this environment, the performance of the IP block under radiation must be ensured for a total ionizing dose up to 500 Mrad and possible ions interaction for a linear energy transfer of 15 MeV/cm$^2$/mg. [...]
2018 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1943-1950

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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes / Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ( $E_{\text {kin}}$ ) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50- $\Omega $ cm material after irradiation with 23-GeV protons to a fluence of $6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$ [...]
2022 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586 External link: preprint

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TCAD radiation damage model / Passeri, D (INFN) ; Morozzi, A (INFN)
AIDA-2020-D7.4.- Geneva : CERN, 2020 AIDA-2020, 7.4 Fulltext: AIDA-2020-D7 - 4.PDF; AIDA-2020-D7_4 - 4.PDF;

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Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons / Gurimskaya, Yana (CERN) ; Dias De Almeida, Pedro (CERN ; Cantabria U., Santander) ; Fernandez Garcia, Marcos (Cantabria U., Santander) ; Mateu Suau, Isidre (CERN) ; Moll, Michael (CERN) ; Fretwurst, Eckhart (Hamburg U.) ; Makarenko, Leonid (Belarus State U.) ; Pintilie, Ioana (Bucharest, Nat. Inst. Mat. Sci.)
In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D; projects. These devices are facing a particular problem — the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162221
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162221

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Displacement damage in silicon detectors for high energy physics / Moll, Michael (CERN)
In this article we review the radiation damage issues caused by displacement damage in silicon sensors operating in the harsh radiation environments of High Energy Physics experiments. The origin and parameterization of the changes in the macroscopic electrical sensor properties like depletion voltage, leakage current and charge collection efficiency as a function of fluence of different particles, annealing time and annealing temperature are reviewed. [...]
2018 - 22 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1561-1582
In : Conference on Radiation and its Effects on Components and Systems, CERN, Geneva, Switzerland, 2 - 6 Oct 2017, pp.1561-1582

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TCAD Librairies / Pangaud, P (CNRS)
AIDA-2020-D6.1.- Geneva : CERN, 2018 AIDA-2020, 6.1 Fulltext: 1.PDF;

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Radiation damage modeling: TCAD simulation / Jain, Geetika (Delhi U.) /RD50 Collaboration
The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. [...]
SISSA, 2019 - 12 p. - Published in : PoS VERTEX2018 (2019) 017 Fulltext from publisher: PDF;
In : The 27th International Workshop on Vertex Detectors, Chennai, India, 21 - 26 Oct 2018, pp.017

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