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CERN Document Server 2,016 elementer funnet  1 - 10nesteslutt  gå til element: Søket tok 0.44 sekunder. 
1.
(100)
Design of the optimum insulator gate bipolar transistor using response surface method with cluster analysis / Wang, Chi Ling ; Lai Ming Hung ; Huang Sy Ruen ; Yeh Chao Yu
In this paper, a statistical methodology that can be used for the optimization of the Insulator Gate Bipolar Transistor (IGBT) devices is proposed. This is achieved by integrating the response surface method (RSM) with cluster analysis, weighted composite method and genetic algorithm (GA). [...]
2004 - Published in : Jpn. J. Appl. Phys., 1: 43 (2004) , pp. 912-917
Detaljert visning - Lignende elementer
2.
(37)
The IGBT as an element of switch discharge with a linear mode use in capacitor discharge power converters / Cravero, J M ; Royer, J P
This paper presents an unusual use of IGBT (Insulated Gate Bipolar Transistor) modules in capacitor discharge power supplies to achieve different current pulse shapes. [...]
CERN-PS-98-053-PO. - 1998. - 7 p.
Access to fulltext document
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3.
(30)
High-power active devices / Carroll, E
Very high-power (HP) electronics represents a small part of the electronics market. In semiconductor terms, HP represents a world device market of 600 million euros out of a total 200 billion euros for all semiconductors—a mere 0.3 per cent. [...]
CERN, 2006 Published version from CERN: PDF;
In : CAS - CERN Accelerator School and CLRC Daresbury Laboratory : Specialised CAS Course on Power Converters, Warrington, UK, 12 - 18 May 2004, pp.43-56 (CERN-2006-010)
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4.
(25)
Total Ionizing Dose Effect in LDMOS Oxides and Devices / Borel, T (IES, Montpellier) ; Furic, S (Unlisted, FR) ; Leduc, E (Unlisted, FR) ; Michez, A (IES, Montpellier) ; Boch, J (IES, Montpellier) ; Touboul, A (IES, Montpellier) ; Azais, B (Unlisted, FR) ; Danzeca, S (CERN) ; Dusseau, L (IES, Montpellier)
Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with $^{60}$Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. [...]
2019 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1606-1611
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1606-1611
Detaljert visning - Lignende elementer
5.
(24)
A high-current, IGBT-based static switch for energy extraction in superconducting power circuits: Concept, design and production of a 30 kA monopolar and a 1 kA bipolar fast opening switches / Dahlerup-Petersen, K (CERN) ; Bednarek, M (CERN) ; Coelingh, G J (CERN) ; Dinius, A (CERN) ; Erokhin, A (CERN) ; Favre, M (CERN) ; Siemko, A (CERN)
The steadily increasing demand from the particle physics community for higher beam energies and higher integrated beam luminosity has reinforced the necessity for new accelerator equipment, frequently breaking with conventional technologies. One of the fields where new and innovative engineering is required and where interesting developments are ongoing, is the domain of fast switching of high DC currents, such as it is required for rapid and safe extraction of large quantities of energy stored in superconducting magnet circuits. [...]
2017 - 6 p. - Published in : 10.1109/IPMHVC.2016.8012875
In : 2016 IEEE International Power Modulator and High Voltage Conference, San Francisco, CA, USA, 5 - 9 Jul 2016, pp.508-513
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6.
(21)
IGBT Power Stack Integrity Assessment Method for High-Power Magnet Supplies / Asimakopoulos, Panagiotis (CERN) ; Papastergiou, Konstantinos (CERN) ; Thiringer, Torbjorn (Chalmers U. Tech.) ; Bongiorno, Massimo (Chalmers U. Tech.) ; Le Godec, Gilles (CERN)
This paper proposes a method for assessing the integrity of a series of insulated-gate bipolar transistor (IGBT) power stacks during factory-acceptance tests and service stops. The key challenge that is addressed in this paper is detecting common assembly issues that affect the power stack thermal path as well as distinguishing the acute aging effects of bond-wire lift-off and solder delamination. [...]
2019 - 13 p. - Published in : IEEE Trans. Power Electron. 34 (2019) 11228-11240 Fulltext: PDF;
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7.
(20)
On $V_{ce}$ Method: In Situ Temperature Estimation and Aging Detection of High-Current IGBT Modules Used in Magnet Power Supplies for Particle Accelerators / Asimakopoulos, Panagiotis (CERN ; Chalmers U. Tech.) ; Papastergiou, Konstantinos (CERN) ; Thiringer, Torbjorn (Chalmers U. Tech.) ; Bongiorno, Massimo (Chalmers U. Tech.) ; Le Godec, Gilles (CERN)
Magnet power supplies used in particle accelerators are a specialized application of power electronics that require long lifetime operation with no unscheduled interruptions and high output current precision. In this paper, the $V_{ce}$ method with sensing current is considered for the estimation of the junction temperature and the aging detection of high-current insulated gate bipolar transistor (IGBT) modules used in this specialized application. [...]
2019 - 10 p. - Published in : IEEE Transactions on Industrial Electronics 66 (2019) 551-560
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8.
(19)
High Sensitivity HEH Monitor / Senaj, V (CERN) ; Pastor, D Cabrerizo (CERN) ; Kramer, T (CERN)
The most critical failure mode of HV semiconductors exposed to radiation is Single Event Burnout (SEB). The probability of this catastrophic failure mode is strongly dependent on the applied bias voltage and is triggered by either heavy ions or High Energy Hadrons (HEH). [...]
2019 - 4 p. - Published in : 10.1109/PPPS34859.2019.9009620
In : IEEE Pulsed Power and Plasma Science Conference, Orlando, FL, USA, 23 -28 Jun 2019
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9.
(18)
Test results of a 7.5 kA semi-conductor prototype switch as modular switchgear in energy extraction systems for the HL-LHC magnet test facility / Coelingh, G J (CERN) ; Austnes, P F (CERN) ; Bednarek, M (CERN) ; Dahlerup-Petersen, K (CERN) ; Dinius, A (CERN) ; Erokhin, A (CERN) ; Favre, M (CERN) ; Karaventzas, V D (CERN) ; Michniuk, S (CERN) ; Panev, B (CERN) et al.
The superconducting magnets, intended for use in the LHC High Luminosity (HL-LHC) project at CERN are based on Nb$_3$Sn technology. Powering of prototypes of such magnets with up to tens of kilo-Amperes is required for detailed studies of the quench behavior as well as an evaluation of the associated magnet protection equipment. [...]
2016 - 6 p. - Published in : 10.1109/IPMHVC.2016.8012877
In : 2016 IEEE International Power Modulator and High Voltage Conference, San Francisco, CA, USA, 5 - 9 Jul 2016, pp.514-519
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10.
(18)
High precision scalable power converter for accelerator magnets / Haugen, Krister Leonart (Norwegian U. Sci. Tech. ; CERN) ; Papastergiou, Konstantinos (CERN) ; Asimakopoulos, Panagiotis (CERN) ; Peftitsis, Dimosthenis (Norwegian U. Sci. Tech.)
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) to be an excellent replacement of existing Silicon Insulated Gate Bipolar Transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. [...]
arXiv:2201.10824.- 2022-03-16 - 7 p. - Published in : JINST
Fulltext: PDF;
In : TWEPP 2021 Topical Workshop on Electronics for Particle Physics, Online, Online, 20 - 24 Sep 2021, pp.C03021
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