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CERN Document Server 2,045 record trovati  1 - 10successivofine  salta al record: La ricerca ha impiegato 1.42 secondi. 
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Radiation-hard semiconductor detectors for SuperLHC / Bruzzi, Mara ; Adey, J ; Al-Ajili, A A ; Alexandrov, P ; Alfieri, G ; Allport, Philip P ; Andreazza, A ; Artuso, M ; Assouak, S ; Avset, B S et al.
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 541 (2005) 189-201
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Development of radiation tolerant semiconductor detectors for the Super-LHC / RD50 Collaboration
The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D; program. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 546 (2005) 99-107
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Recent advancements in the development of radiation hard semiconductor detectors for S-LHC / RD50 Collaboration
The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 552 (2005) 7-19
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Developments for Radiation Hard Silicon Detectors by Defect Engineering : Results by the CERN RD48 (ROSE) Collaboration / ROSE Collaboration
Geneva : CERN, 2000 Fulltext: PDF; Published version from CERN: PDF;
In : 6th Workshop on Electronics for LHC Experiments, Krakow, Poland, 11 - 15 Sep 2000, pp.280-285 (CERN-2000-010)
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The CERN RD50 Collaboration : Development of Radiation-Hard Semiconductor Detectors for Super-LHC / Macchiolo, Anna (Florence U. ; INFN, Florence)
The proposed luminosity upgrade of the Large Hadron Collider (S‐LHC) at CERN represents a technological challenge for the vertex detectors of the SLHC experiments since the innermost layers will receive fast hadron fluences up to 1016 cm−2. The CERN RD50 project has been established to explore detector materials and designs that will allow to operate devices up to this limit. [...]
2005 - Published in : AIP Conf. Proc. 794 (2005) 302-306
In : 17th Conference on High Energy Physics, Catania, Italy, 30 Mar - 2 Apr 2005, pp.302-306
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Irradiation effects on thin epitaxial silicon detectors / Khomenkov, V ; Bisello, D ; Bruzzi, M ; Candelori, A ; Litovchenko, A P ; Piemonte, C ; Rando, R ; Ravotti, F ; Zorzi, N
2006 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 568 (2006) 61-65
In : 10th European Symposium on Semiconductor Detectors (formerly 'Elmau Conference'), Wildbad Kreuth, Germany, 12 - 16 Jun 2005, pp.61-65
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Characterization of oxygen dimer-enriched silicon detectors / Boisvert, V ; Lindström, J L ; Moll, M ; Murin, L I ; Pintilie, I
Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 552 (2005) 49-55
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Deep defect levels in standard and oxygen enriched silicon detectors before and after Co-60 gamma irradiation / Stahl, J ; Fretwurst, E ; Lindström, G ; Pintilie, I
DESY-2002-199-B ; DESY-2002-199-B. - 2002.
Fultext from DESY
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Results on defects induced by Co-60 gamma irradiation in standard and oxygen enriched silicon / Pintilie, I ; Fretwurst, E ; Lindström, G ; Stahl, J
DESY-2002-199-D ; DESY-2002-199-D. - 2002.
Fultext from DESY
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RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
Fulltext
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