1.
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Design of a radiation tolerant system for total ionizing dose monitoring using floating gate and RadFET dosimeters
/ Ferraro, R (CERN ; LIRMM, Montpellier) ; Danzeca, S (CERN) ; Brucoli, M (CERN ; IES, Montpellier) ; Masi, A (CERN) ; Brugger, M (CERN) ; Dilillo, L (LIRMM, Montpellier ; CNRS, France)
The need for upgrading the Total Ionizing Dose (TID) measurement resolution of the current version of the Radiation Monitoring system for the LHC complex has driven the research of new TID sensors. The sensors being developed nowadays can be defined as Systems On Chip (SOC) with both analog and digital circuitries embedded in the same silicon. [...]
2017 - 12 p.
- Published in : JINST 12 (2017) C04007
In : Topical Workshop on Electronics for Particle Physics, Karlsruhe, Germany, 26 - 30 Sep 2016, pp.C04007
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2.
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Floating Gate Dosimeter Suitability for Accelerator-Like Environments
/ Brucoli, M (CERN) ; Danzeca, S (CERN) ; Brugger, M (CERN) ; Masi, A (CERN) ; Pineda, A (IC Malaga, Alar) ; Cesari, J (IC Malaga, Alar) ; Dusseau, L (IES, Montpellier) ; Wrobel, F (IES, Montpellier)
In this paper, the suitability of floating gate dosimeter as total ionizing dose (TID) detector in mixed fields, representative of large hadron collider (LHC) radiation environment, has been investigated. Several experiments were performed in order to characterize the dosimeter. [...]
2017 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2054-2060
In : 16th European Conference on Radiation and its Effects on Components and Systems, Bremen, Germany, 19 - 23 Sep 2016, pp.2054-2060
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3.
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Investigation on Passive and Autonomous Mode Operation of Floating Gate Dosimeters
/ Brucoli, M (CERN ; Montpellier U.) ; Cesari, J (Unlisted, ES) ; Danzeca, S (CERN) ; Brugger, M (CERN) ; Masi, A (CERN) ; Pineda, A (Unlisted, ES) ; Dusseau, L (Montpellier U.) ; Wrobel, F (Montpellier U.)
In the context of achieving an efficient radiation monitoring system, while also aiming to increase the flexibility of the measurement system, the integrated digital and analog circuitries of the floating gate dosimeter (FGDOS) have been upgraded. The capability to control autonomously the recharge process and the easy access to the data allows exploiting the FGDOS in both the autonomous and passive mode. [...]
2019 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1620-1627
Fulltext: PDF;
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1620-1627
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4.
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An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
/ Rizzo, Marta (CERN ; Milan, Polytech.) ; Brucoli, Matteo (CERN) ; Danzeca, Salvatore (CERN) ; Masi, Alessandro (CERN) ; Pineda, Àlvaro (Unlisted, ES) ; Mas, Bartomeu Servera (Unlisted, ES)
A new method for enhancing the sensitivity of the Floating Gate DOSimeter (FGDOS) has been investigated. By increasing the electric field in the silicon dioxide, it is possible to improve the fractional yield of collection of the electron–hole pairs, thus to increase the device’s sensitivity. [...]
2022 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1876-1883
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5.
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Investigation on the Sensitivity Degradation of Dosimeters based on Floating Gate Structure
/ Brucoli, M (CERN) ; Danzeca, S (CERN) ; Cesari, J (Unlisted, ES) ; Brugger, M (CERN) ; Masi, A (CERN) ; Gilardoni, S (CERN) ; Pineda, A (Unlisted, ES) ; Dusseau, L (IES, Montpellier) ; Wrobel, F (IES, Montpellier)
Dosimeters based on floating gate structure exhibit a linear radiation response, whose sensitivity is required to be highly stable in order to achieve an accurate dose measurement. The understanding of the mechanisms behind the sensitivity degradation is, therefore, a fundamental task in order to improve the design of these devices. [...]
2017 - 4 p.
- Published in : 10.1109/RADECS.2017.8696191
In : Conference on Radiation and its Effects on Components and Systems, CERN, Geneva, Switzerland, 2 - 6 Oct 2017, pp.1-4
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6.
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Study of the Impact of the LHC Radiation Environments on the Synergistic Displacement Damage and Ionizing Dose Effect on Electronic Components
/ Ferraro, Rudy (CERN ; LIRMM, Montpellier) ; Danzeca, Salvatore (CERN) ; Cangialosi, Chiara (CERN) ; García Alía, Rubén (CERN) ; Cerutti, Francesco (CERN) ; Tsinganis, Andrea (CERN) ; Dilillo, Luigi (LIRMM, Montpellier) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN)
Bipolar-based components can exhibit a higher (or lower) degradation when exposed to both total ionizing dose (TID) and displacement damage (DD) effects simultaneously than the sum of the two separated effects. This paper investigates the implications of this synergistic effect on the radiation qualification process of large hadron collider's (LHC's) electronic equipment. [...]
2019 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1548-1556
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1548-1556
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7.
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Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions
/ Gupta, Viyas (LIRMM, Montpellier) ; Bosser, Alexandre (LIRMM, Montpellier) ; Tsiligiannis, Georgios (CERN) ; Zadeh, Ali (ESTEC, Noordwijk) ; Javanainen, Arto (Jyvaskyla U.) ; Virtanen, Ari (Jyvaskyla U.) ; Puchner, Helmut (San Jose State U.) ; Saigne, Frederic (Montpellier U.) ; Wrobel, Frederic (Montpellier U.) ; Dilillo, Luigi (LIRMM, Montpellier)
The impact of heavy-ions on commercial Ferroelectric Memories (FRAMs) is analyzed. The influence of dynamic and static test modes as well as several stimuli on the error rate of this memory is investigated [...]
2016 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 63 (2016) 2010-2015
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8.
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COTS Optocoupler Radiation Qualification Process for LHC Applications Based on Mixed-Field Irradiations
/ Ferraro, Rudy (CERN) ; Foucard, Gilles (CERN) ; Infantino, Angelo (CERN) ; Dilillo, Luigi (LIRMM, Montpellier) ; Brugger, Markus (CERN) ; Masi, Alessandro (CERN) ; García Alía, Rubén (CERN) ; Danzeca, Salvatore (CERN)
Optoelectronic components are the most sensitive devices of systems exposed to radiation environments. Displacement damage (DD) effects can severely degrade the performances of such devices, which are extensively used in critical electronic systems installed in particle accelerators or nuclear power plants. [...]
2020 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 67 (2020) 1395-1403
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9.
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A complete qualification of floating gate dosimeter for CERN applications
/ Brucoli, M (CERN ; IES, Montpellier) ; Danzeca, S (CERN) ; Brugger, M (CERN) ; Masi, A (CERN) ; Pineda, A (IC Malaga, Alaró) ; Cesari, J (IC Malaga, Alaró) ; Dusseau, L
The radiation environment produced by the CERN accelerator complex includes different kinds of particles whose energy can vary in a wide spectrum. In this framework, the radiation monitoring is a challenging task that needs to be continuously improved. [...]
2017 - 4 p.
- Published in : 10.1109/RADECS.2016.8093162
In : 16th European Conference on Radiation and its Effects on Components and Systems, Bremen, Germany, 19 - 23 Sep 2016, pp.8093162
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10.
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Impact of neutrons on the RadFET dose response when exposed to mixed-fields
/ Marzo, M (CERN) ; Alia, R G (CERN) ; Infantino, A (CERN) ; Brucoli, M (CERN) ; Danzeca, S (CERN)
The Radiation MONitoring (RadMON) system is widely employed at CERN to measure the radiation levels in the accelerators, as well as the degradation of electronics located in the Large Hadron Collider (LHC) tunnel and shielded areas. Radiation Field Effect Transistors (RadFETs) integrated in the RadMON specifically measure the Total Ionizing Dose (TID) in the accelerators complex and are affected in turn by the CERN radiation field.
The CERN High energy AcceleRator Mixed-field test facility (CHARM) has been built with the intention of reproducing different mixed-fields (atmospheric, space, accelerators, ground,…), to test electronics when exposed to specific radiation environments. [...]
2021 - 8 p.
- Published in : Radiat. Phys. Chem. 179 (2021) 108062
Fulltext: PDF;
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