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CERN Accelerating science

CERN Document Server 2,043 εγγραφές βρέθηκαν  1 - 10επόμενοτέλος  μετάβαση στην εγγραφή: Η έρευνα πήρε 0.68 δευτερόλεπτα. 
1.
Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types / Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Decoster, S (Leuven U.) ; Correia, JG (ITN, Sacavem) ; Amorim, LM (Leuven U.) ; da Silva, MR (Lisbon U.) ; Araújo, JP (Lisbon U.) ; Vantomme, A (Leuven U.) /EC-SLI Collaboration
We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. [...]
CERN-OPEN-2013-012.- Leuven : Instituut voor Kern- en Stralingsfysica, 2012 - 10 p. - Published in : Phys. Rev. B 86 (2012) 125206 Article: PDF;
2.
Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability / Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Correia, JG (ITN, Sacavem) ; Decoster, S (Leuven U.) ; da Silva, MR (Lisbon U.) ; Araújo, JP (Lisbon U.) ; Vantomme, A (Leuven U.)
We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. [...]
CERN-OPEN-2013-009.- Leuven : Instituut voor Kern- en Stralingsfysica, 2011 - 3 p. - Published in : Appl. Phys. Lett. 98 (2011) 201905 Preprint: PDF;
3.
Structure and magnetism of transition-metal implanted dilute magnetic semiconductors / Pereira, Lino
The discovery of a dilute magnetic semiconductor (DMS) in which ferromagnetism is carrier-mediated and persists above room temperature is a critical step towards the development of semiconductor-based spintronics [...]
CERN-THESIS-2011-309 - 296 p.

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4.
Evidence of N substitution by Mn in GaN / Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Decoster, S (Leuven U.) ; Correia, JG (ITN, Sacavem) ; da Silva, MR (Lisbon U., CFNUL) ; Vantomme, A (Leuven U.) ; Araújo, JP (Porto U.) /EC-SLI Collaboration
We report on the lattice location of Mn in wurtzite GaN using beta− emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. [...]
CERN-OPEN-2013-013.- Leuven : Leuven U., 2012 - 5 p. - Published in : Phys. Rev. B 86 (2012) 195202 Article: PDF;
5.
Lattice position and thermal stability of diluted As in Ge / Decoster, S (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Cottenier, S (Gent U.) ; Correia, JG (ITN, Sacavem) ; Mendonça, T (Lisbon U.) ; Amorim, LM (Leuven U.) ; Pereira, LMC (Leuven U.) ; Vantomme, A (Leuven U.) /EC-SLI Collaboration
We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. [...]
CERN-OPEN-2013-011.- Leuven : Instituut voor Kern- en Stralingsfysica, 2012 - 17 p. - Published in : J. Appl. Phys. 111 (2012) 053528 Article: PDF;
6.
Diluted manganese on the bond-centered site in germanium / Decoster, S (Leuven U.) ; Vantomme, A (Leuven U.) ; Cottenier, S (Gent U.) ; Wahl, U (ITN, Sacavem) ; Correia, JG (ITN, Sacavem) ; Pereira, LMC (Leuven U.) ; Lacasta, C (Valencia U., IFIC) ; Da Silva, MR (Lisbon U.)
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. [...]
CERN-OPEN-2013-008.- Leuven : Instituut voor Kern- en Stralingsfysica, 2010 - 3 p. - Published in : Appl. Phys. Lett. 97 (2010) 151914 Article: PDF;
7.
Alpha emission channeling lattice location experiments of $^{8}$B / Sacavém – Lisbon – Leuven – Göttingen – Porto – Durban – CERN – collaboration
CERN-INTC-2010-077 ; INTC-I-130.
- 2010.
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8.
Lattice location study of implanted In in Ge / Decoster, S (Leuven U.) ; De Vries, B (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Correia, J G (ITN, Sacavem) ; Vantomme, A (Leuven U.) /EC-SLI Collaboration
We report on emission channeling experiments to determine the lattice location and the thermal stability of implanted $^{111}$In atoms in Ge. The majority of the In atoms was found on the substitutional site, which is a thermally stable site at least up to 500 °C. [...]
CERN-OPEN-2013-005.- Leuven : Instituut voor Kern-en Stralingsfysica, 2009 - 4 p. - Published in : J. Appl. Phys. 105 (2009) 083522 Fulltext: PDF;
9.
Mixed Zn and O substitution of Co and Mn in ZnO / Pereira, Lino Miguel da Costa (Leuven U. ; ITN, Sacavem ; Porto U.) ; Wahl, Ulrich (ITN, Sacavem ; Lisbon U., CFNUL) ; Decoster, Stefan (Leuven U.) ; Correia, João Guilherme (ITN, Sacavem ; Lisbon U., CFNUL) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Araújo, João Pedro (Porto U.) ; Vantomme, André (Leuven U.) /EC-SLI Collaboration
The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies. In general, this occupancy can be correctly predicted based on chemical intuition, but not always. [...]
CERN-OPEN-2014-004.- Leuven, Belgium : KU Leuven, 2011 - 6 p. - Published in : Phys. Rev. B 84 (2011) 125204 Preprint: PDF;
10.
Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations / Barbosa, M B (Porto U.) ; Gonçalves, J N (Aveiro U.) ; Redondo-Cubero, A (ITN, Sacavem ; Lisbon U., CFNUL) ; Miranda, S M C (ITN, Sacavem) ; Simon, R (Bonn U., HISKP) ; Kessler, P (Bonn U., HISKP) ; Brandt, M (Humboldt-U., Berlin) ; Henneberger, F (Humboldt-U., Berlin) ; Nogales, E (U. Complutense, Madrid) ; Méndez, B (U. Complutense, Madrid) et al.
The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\,$min.) and later compared to density functional theory simulations. [...]
CERN-OPEN-2014-017.- Porto : IFIMUP-In, 2013 - 8 p. - Published in : Phys. Status Solidi B 250 (2013) 801-808 Preprint: PDF;

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