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Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types
/ Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Decoster, S (Leuven U.) ; Correia, JG (ITN, Sacavem) ; Amorim, LM (Leuven U.) ; da Silva, MR (Lisbon U.) ; Araújo, JP (Lisbon U.) ; Vantomme, A (Leuven U.)
/EC-SLI Collaboration
We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. [...]
CERN-OPEN-2013-012.-
Leuven : Instituut voor Kern- en Stralingsfysica, 2012 - 10 p.
- Published in : Phys. Rev. B 86 (2012) 125206
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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability
/ Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Correia, JG (ITN, Sacavem) ; Decoster, S (Leuven U.) ; da Silva, MR (Lisbon U.) ; Araújo, JP (Lisbon U.) ; Vantomme, A (Leuven U.)
We report on the lattice location of Mn in heavily p-type doped GaAs by means of $\beta^{-}$-emission channeling from the decay of $^{56}$Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. [...]
CERN-OPEN-2013-009.-
Leuven : Instituut voor Kern- en Stralingsfysica, 2011 - 3 p.
- Published in : Appl. Phys. Lett. 98 (2011) 201905
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Evidence of N substitution by Mn in GaN
/ Pereira, LMC (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Decoster, S (Leuven U.) ; Correia, JG (ITN, Sacavem) ; da Silva, MR (Lisbon U., CFNUL) ; Vantomme, A (Leuven U.) ; Araújo, JP (Porto U.)
/EC-SLI Collaboration
We report on the lattice location of Mn in wurtzite GaN using beta− emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. [...]
CERN-OPEN-2013-013.-
Leuven : Leuven U., 2012 - 5 p.
- Published in : Phys. Rev. B 86 (2012) 195202
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Lattice position and thermal stability of diluted As in Ge
/ Decoster, S (Leuven U.) ; Wahl, U (ITN, Sacavem) ; Cottenier, S (Gent U.) ; Correia, JG (ITN, Sacavem) ; Mendonça, T (Lisbon U.) ; Amorim, LM (Leuven U.) ; Pereira, LMC (Leuven U.) ; Vantomme, A (Leuven U.)
/EC-SLI Collaboration
We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms. [...]
CERN-OPEN-2013-011.-
Leuven : Instituut voor Kern- en Stralingsfysica, 2012 - 17 p.
- Published in : J. Appl. Phys. 111 (2012) 053528
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Diluted manganese on the bond-centered site in germanium
/ Decoster, S (Leuven U.) ; Vantomme, A (Leuven U.) ; Cottenier, S (Gent U.) ; Wahl, U (ITN, Sacavem) ; Correia, JG (ITN, Sacavem) ; Pereira, LMC (Leuven U.) ; Lacasta, C (Valencia U., IFIC) ; Da Silva, MR (Lisbon U.)
The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. [...]
CERN-OPEN-2013-008.-
Leuven : Instituut voor Kern- en Stralingsfysica, 2010 - 3 p.
- Published in : Appl. Phys. Lett. 97 (2010) 151914
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Mixed Zn and O substitution of Co and Mn in ZnO
/ Pereira, Lino Miguel da Costa (Leuven U. ; ITN, Sacavem ; Porto U.) ; Wahl, Ulrich (ITN, Sacavem ; Lisbon U., CFNUL) ; Decoster, Stefan (Leuven U.) ; Correia, João Guilherme (ITN, Sacavem ; Lisbon U., CFNUL) ; Amorim, Lígia Marina (Leuven U.) ; da Silva, Manuel Ribeiro (Lisbon U., CFNUL) ; Araújo, João Pedro (Porto U.) ; Vantomme, André (Leuven U.)
/EC-SLI Collaboration
The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies. In general, this occupancy can be correctly predicted based on chemical intuition, but not always. [...]
CERN-OPEN-2014-004.-
Leuven, Belgium : KU Leuven, 2011 - 6 p.
- Published in : Phys. Rev. B 84 (2011) 125204
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Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations
/ Barbosa, M B (Porto U.) ; Gonçalves, J N (Aveiro U.) ; Redondo-Cubero, A (ITN, Sacavem ; Lisbon U., CFNUL) ; Miranda, S M C (ITN, Sacavem) ; Simon, R (Bonn U., HISKP) ; Kessler, P (Bonn U., HISKP) ; Brandt, M (Humboldt-U., Berlin) ; Henneberger, F (Humboldt-U., Berlin) ; Nogales, E (U. Complutense, Madrid) ; Méndez, B (U. Complutense, Madrid) et al.
The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\,$min.) and later compared to density functional theory simulations. [...]
CERN-OPEN-2014-017.-
Porto : IFIMUP-In, 2013 - 8 p.
- Published in : Phys. Status Solidi B 250 (2013) 801-808
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