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CMOS Monolithic Active Pixel Sensors: challenges and perspectives
/ Snoeys, Walter (speaker) (CERN)
CMOS cameras revolutionized the visible imaging world, and now move into other fields. CMOS Monolithic Active Pixel Sensors (CMOS MAPS) have been successfully used in the STAR experiment and are now taking data in the 10 m2 Inner Tracker System (ITS2) of the ALICE experiment at CERN. CMOS MAPS in high energy physics (HEP) continue to be the object of intense research and development, for instance in EP R&D WP1.2 and DRDs, and for future ALICE and LHCb upgrades, and detectors at FCC. CMOS MAPS for HEP face very different requirements, but their development greatly benefits from the progress of CMOS imagers for visible light, the integration offered by stitching and wafer stacking, as well as trends in mainstream CMOS.
3D wafer stacking and stitching are now well established for CMOS sensors for visible light, and stacking is also now intensely pursued in mainstream CMOS. [...]
2024 - 4303.
Detector Seminar
External link: Event details
In : CMOS Monolithic Active Pixel Sensors: challenges and perspectives
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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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Time performance of Analog Pixel Test Structures with in-chip operational amplifier implemented in 65 nm CMOS imaging process
/ Rinella, Gianluca Aglieri (CERN) ; Aglietta, Luca (INFN, Turin ; Turin U.) ; Antonelli, Matias (INFN, Trieste) ; Barile, Francesco (INFN, Bari ; Bari U.) ; Benotto, Franco (INFN, Turin) ; Beolè, Stefania Maria (INFN, Turin ; Turin U.) ; Botta, Elena (INFN, Turin ; Turin U.) ; Bruno, Giuseppe Eugenio (Bari Polytechnic ; INFN, Bari) ; Carnesecchi, Francesca (CERN) ; Colella, Domenico (INFN, Bari ; Bari U.) et al.
In the context of the CERN EP R&D; on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An Analog Pixel Test Structure (APTS) featuring fast per pixel operational-amplifier-based buffering for a small matrix of four by four pixels, with a sensor with a small collection electrode and a very non-uniform electric field, was designed to allow detailed characterization of the pixel performance in this technology. [...]
arXiv:2407.18528.-
2024-11-12 - 27 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170034
Fulltext: PDF;
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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
/ Wennlöf, Håkan (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Huth, Lennart (DESY) ; Lachnit, Stephan (DESY ; Hamburg U.) ; Mendes, Larissa (DESY ; Bonn U.) et al.
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. [...]
arXiv:2408.00027.
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Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180nm CMOS technology
/ Schall, Lars (Bonn U.) ; Bespin, Christian (Bonn U.) ; Caicedo, Ivan (Bonn U.) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) ; Hügging, Fabian (Bonn U.) ; Krüger, Hans (Bonn U.) ; Moustakas, Konstantinos (Bonn U.) ; Pernegger, Heinz (CERN) et al.
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. [...]
arXiv:2402.12153.-
2024-04-19 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169381
Fulltext: Publication - PDF; 2402.12153 - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169381
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Simulations and performance studies of a MAPS in 65 nm CMOS imaging technology
/ Simancas, Adriana (DESY ; Bonn U.) ; Braach, Justus (CERN ; Hamburg U., Dept. Math.) ; Buschmann, Eric (CERN) ; Chauhan, Ankur (DESY) ; Dannheim, Dominik (CERN) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dort, Katharina (CERN ; Giessen U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) et al.
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. [...]
arXiv:2402.14524.-
2024-05-03 - 5 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169414
Fulltext: 2402.14524 - PDF; Publication - PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169414
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