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Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
/ Paolozzi, L. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U.) ; Elviretti, M. (CERN) ; Rücker, H. (CERN) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) et al.
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. [...]
arXiv:2412.07606.
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Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
/ Moretti, T. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) ; Nakamura, K. (KEK, Tsukuba) ; Takubo, Y. (KEK, Tsukuba) et al.
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a beam of 120 GeV/c pions. The ASIC contains a matrix of 100 μ m pitch hexagonal pixels, readout out by low noise and very fast frontend electronics produced in a 130 nm SiGe BiCMOS technology process. [...]
arXiv:2404.12885.-
2024-07-29 - 15 p.
- Published in : JINST 19 (2024) P07036
Fulltext: 2404.12885 - PDF; Publication - PDF;
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Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Latshaw, A. (Geneva U.) ; Bonacina, L. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (IHP, Frankfurt) ; Rücker, H. (IHP, Frankfurt) et al.
The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2401.01229.-
2024-04-24 - 11 p.
- Published in : JINST 19 (2024) P04029
Fulltext: 2401.01229 - PDF; Publication - PDF;
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Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
/ Milanesio, M. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Moretti, T. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Semendyaev, I. (Geneva U.) ; Zambito, S. (Geneva U.) ; Nakamura, K. (KEK, Tsukuba) et al.
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2310.19398.-
2024-01-15 - 13 p.
- Published in : JINST 19 (2024) P01014
Fulltext: 2310.19398 - PDF; publication - PDF;
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20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer
/ Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Kugathasan, T. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Elviretti, M. (Leibniz U., Hannover) et al.
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. [...]
arXiv:2301.12244.-
2023-03-28 - 16 p.
- Published in : JINST
Fulltext: 2301.12244 - PDF; Publication - PDF;
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Gain measurements of the first proof-of-concept PicoAD prototype with a 55Fe X-ray radioactive source
/ Milanesio, M (Geneva U.) ; Iacobucci, G (Geneva U.) ; Paolozzi, L (Geneva U. ; CERN) ; Munker, M (Geneva U.) ; Cardella, R (Geneva U.) ; Gurimskaya, Y (CERN) ; Martinelli, F (Geneva U.) ; Picardi, A (Geneva U.) ; Rücker, H (IHP, Frankfurt) ; Trusch, A (IHP, Frankfurt) et al.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamping capability. A proof-of-concept prototype of the PicoAD sensor has been produced by IHP microelectronics. [...]
2023 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1046 (2023) 167807
Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, It, 22 - 28 May 2022, pp.167807
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Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
/ Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Gurimskaya, Y. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) ; Rücker, H. (IHP, Frankfurt) ; Trusch, A. (IHP, Frankfurt) ; Valerio, P. (Geneva U.) et al.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. [...]
arXiv:2206.07952.-
2022-10-20 - 15 p.
- Published in : JINST 17 (2022) P10032
Fulltext: 2206.07952 - PDF; Publication - PDF;
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Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
/ Iacobucci, G. (Geneva U.) ; Zambito, S. (Geneva U.) ; Milanesio, M. (Geneva U.) ; Moretti, T. (Geneva U.) ; Saidi, J. (Geneva U.) ; Paolozzi, L. (Geneva U. ; CERN) ; Munker, M. (Geneva U.) ; Cardella, R. (Geneva U.) ; Martinelli, F. (Geneva U.) ; Picardi, A. (Geneva U. ; CERN) et al.
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. [...]
arXiv:2208.11019.-
2022-10-25 - 22 p.
- Published in : JINST 17 (2022) P10040
Fulltext: document - PDF; 2208.11019 - PDF;
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Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
/ Iacobucci, G. (Geneva U.) ; Paolozzi, L. (Geneva U.) ; Valerio, P. (Geneva U.) ; Moretti, T. (Geneva U.) ; Cadoux, F. (Geneva U.) ; Cardarelli, R. (Geneva U.) ; Cardella, R. (Geneva U.) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrere, D. (Geneva U.) et al.
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. [...]
arXiv:2112.08999.-
2022-02-10 - 17 p.
- Published in : JINST 17 (2022) P02019
Fulltext: 2112.08999 - PDF; document - PDF;
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Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications
/ Martinelli, Fulvio (CERN ; Ecole Polytechnique, Lausanne) ; Magliocca, Chiara (Geneva U.) ; Cardella, Roberto (Geneva U.) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne) ; Iacobucci, Giuseppe (Geneva U.) ; Nessi, Marzio (Geneva U. ; CERN) ; Paolozzi, Lorenzo (Geneva U. ; CERN) ; Rücker, Holger (IHP, Frankfurt) ; Valerio, Pierpaolo (Geneva U.)
This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-end electronics inside the sensitive area of the pixels and to identify the configuration that could satisfy at best the specifications of the experiment. [...]
arXiv:2111.11184.-
2021-12-22 - 20 p.
- Published in : JINST 16 (2021) P12038
Fulltext: 2111.11184 - PDF; document - PDF;
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