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CERN Accelerating science

CERN Document Server Намерени са 21 записа  1 - 10следващкрай  отиване на запис: Търсенето отне 0.74 секунди. 
1.
SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below / Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Cecchetto, Matteo (CERN) ; Wang, Jialei (Leuven U.) ; Tali, Maris (CERN) ; Martinez, Pablo Fernandez (CERN) ; Kastriotou, Maria (CERN) ; Papadopoulou, Athina (CERN) ; Bilko, Kacper (CERN) ; Castellani, Florent (ENSAE, Toulouse) ; Sacristan, Mario (CERN) et al.
The R2E project at CERN has tested a few commercial SRAMs and a custom-designed SRAM, whose data are complementary to various scientific publications. The experimental data include low- and high-energy protons, heavy ions, thermal, intermediate- and high-energy neutrons, high-energy electrons and high-energy pions..
2020 - 8 p. - Published in : 10.1109/redw51883.2020.9325822
In : 2020 IEEE Radiation Effects Data Workshop, Online, US, 7 Dec 2020, pp.1-8
2.
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs / Martinella, C (Jyvaskyla U. ; CERN ; ETH, Zurich (main)) ; Natzke, P (ETH, Zurich (main)) ; Alia, R G (CERN) ; Kadi, Y (CERN) ; Niskanen, K (Jyvaskyla U.) ; Rossi, M (Jyvaskyla U.) ; Jaatinen, J (Jyvaskyla U.) ; Kettunen, H (Jyvaskyla U.) ; Tsibizov, A (ETH, Zurich (main)) ; Grossner, U (ETH, Zurich (main)) et al.
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) and latent damages induced by the radiation environment. [...]
2022 - 7 p. - Published in : Microelectron. Reliab. 128 (2022) 114423 Fulltext: PDF;
3.
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment / Söderström, Daniel (Jyvaskyla U.) ; Matana Luza, Lucas (Montpellier U.) ; Kettunen, Heikki (Jyvaskyla U.) ; Javanainen, Arto (Jyvaskyla U. ; Vanderbilt U.) ; Farabolini, Wilfrid (CERN ; Saclay) ; Gilardi, Antonio (CERN ; Naples U. ; INFN Naples) ; Coronetti, Andrea (Jyvaskyla U. ; CERN) ; Poivey, Christian (ESTEC, Noordwijk) ; Dilillo, Luigi (Montpellier U.)
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. [...]
2021 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 716-723
4.
Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation / Coronetti, Andrea (CERN ; Jyvaskyla U.) ; Garcia Alia, Ruben (CERN) ; Budroweit, Jan (DLR, Bremen) ; Rajkowski, Tomasz (Unlisted, FR) ; Da Costa Lopes, Israel (IES, Montpellier) ; Niskanen, Kimmo (IES, Montpellier) ; Soderstrom, Daniel (Jyvaskyla U.) ; Cazzaniga, Carlo (Rutherford) ; Ferraro, Rudy (CERN) ; Danzeca, Salvatore (CERN) et al.
2021 - 12 p. - Published in : IEEE Trans. Nucl. Sci. 68 (2021) 958-969
5.
Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate / García Alía, Rubén (CERN) ; Tali, Maris (CERN) ; Brugger, Markus (CERN) ; Cecchetto, Matteo (CERN) ; Cerutti, Francesco (CERN) ; Cononetti, Andrea (CERN) ; Danzeca, Salvatore (CERN) ; Esposito, Luigi (CERN) ; Fernández-Martínez, Pablo (CERN) ; Gilardoni, Simone (CERN) et al.
We investigate, through measurements and simulations, the possible direct ionization impact on the accelerator soft-error rate (SER), not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the-art commercial components considered in the 65–16-nm technological range, indirect ionization is still expected to dominate the overall SER in the accelerator mixed-field. [...]
2019 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2019) 345-352 Fulltext: PDF;
6.
Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory / Bosser, A L (Jyvaskyla U. ; LIRMM, Montpellier) ; Gupta, V (LIRMM, Montpellier ; Caltech, Pasadena (main)) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main)) ; Tsiligiannis, G (CERN) ; La Lumondiere, S D (Aerospace Corp.) ; Brewe, D (Argonne (main)) ; Ferlet-Cavrois, V (ESTEC, Noordwijk) ; Puchner, H (Cypress Semiconductor, San Jose) ; Kettunen, H (Jyvaskyla U.) ; Gil, T (LIRMM, Montpellier) et al.
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. [...]
2018 - 7 p. - Published in : 10.1109/TNS.2018.2797543
In : Conference on Radiation and its Effects on Components and Systems, CERN, Geneva, Switzerland, 2 - 6 Oct 2017
7.
Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs / Tali, Maris (CERN ; ESTEC, Noordwijk ; Jyvaskyla U.) ; Garcia Alia, Ruben (CERN) ; Brugger, Markus (CERN) ; Ferlet-Cavrois, Veronique (ESTEC, Noordwijk) ; Corsini, Roberto (CERN) ; Farabolini, Wilfrid (CERN) ; Javanainen, Arto (Jyvaskyla U.) ; Kastriotou, Maria (CERN) ; Kettunen, Heikki (Jyvaskyla U.) ; Santin, Giovanni (ESTEC, Noordwijk) et al.
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. [...]
2018 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1715-1723
8.
Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs / Bosser, A (CEM2, Montpellier ; Jyvaskyla U.) ; Gupta, V (CEM2, Montpellier ; Montpellier U.) ; Tsiligiannis, G (CERN) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main)) ; Kettunen, H (Jyvaskyla U.) ; Puchner, H (Cypress Semiconductor, San Jose) ; Saigne, F (Montpellier U.) ; Virtanen, A (Jyvaskyla U.) ; Wrobel, F (Montpellier U. ; IUF, Paris) ; Dilillo, L (Montpellier U.)
During irradiation testing of RAMs, various failure scenarios may occur which may generate different characteristic Multiple Cell Upset (MCU) error patterns. This work proposes a method based on spatial and temporal criteria to identify them..
2015 - Published in : IEEE Trans. Nucl. Sci. 62 (2015) 2620-2626
9.
The CMS experiment at the CERN LHC / CMS Collaboration
2008 - 361 p. - Published in : JINST 3 (2008) S08004 SISSA/IOP Open Access article: PDF;
In : The CERN Large Hadron Collider - Please contact the library if you need to access this document.
10.
Probe of Triple Shape Coexistence In Neutron Deficient Polonium Nuclei / Wiseman, D R ; Andreyev, A N ; Page, R D ; Darby, I G ; Eeckhaudt, S ; Grahn, T ; Greenlees, P T ; Jones, P ; Julin, R ; Juutinen, S et al.
2006 - Published in : AIP Conf. Proc.: 831 (2006) , pp. 560-562 External link: Published version from AIP
In : International Conference on Frontiers in Nuclear Structures, Astrophysics and Reactions, Kos, Greece, 12 - 17 Sep 2005, pp.560-562

CERN Document Server : Намерени са 21 записа   1 - 10следващкрай  отиване на запис:
Виж също: автори с подобни имена
1 Kettunen, H.
5 Kettunen, Heikki
3 Kettunen, Henrik
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