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CERN Document Server Sök i 9 journaler efter:  Sökningen tog 0.62 sekunder. 
1.
Single event effects testing of the RD53B chip / Menouni, Mohsine (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Flores, Leyre (CERN) ; Fougeron, Denis (Marseille, CPPM) ; Hemperek, Tomasz (Bonn U.) ; Joly, Eva (Marseille, CPPM) ; Lalic, Jelena (CERN) ; Strebler, Thomas (Marseille, CPPM)
The RD53 collaboration has been working since 2014 on the development of pixel chips for the CMS and ATLAS Phase 2 tracker upgrade. This work has recently led to the development of the RD53B full-scale readout chip which is using the 65nm CMOS process and containing 153600 pixels of 50 × 50 μm $^{2}$ The RD53B chip is designed to be robust against the Single Event Effects (SEE), allowing such a complex chip to operate reliably in the hostile environment of the HL-LHC. [...]
2022 - 5 p. - Published in : J. Phys. : Conf. Ser. 2374 (2022) 012084 Fulltext: PDF;
In : International Conference on Technology and Instrumentation in Particle Physics (TIPP 2021), Online, Canada, 24 - 29 May 2021, pp.012084
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2.
The ATLAS experiment at the CERN Large Hadron Collider: a description of the detector configuration for Run 3 / ATLAS Collaboration
The ATLAS detector is installed in its experimental cavern at Point 1 of the CERN Large Hadron Collider. During Run 2 of the LHC, a luminosity of $\mathcal{L}=2\times 10^{34}\mathrm{cm}^{-2}\mathrm{s}^{-1}$ was routinely achieved at the start of fills, twice the design luminosity. [...]
arXiv:2305.16623; CERN-EP-2022-259.- Geneva : CERN, 2024-05-23 - 233 p. - Published in : JINST 19 (2024) P05063 Fulltext: 2305.16623 - PDF; document - PDF; External link: Previous draft version
In : The Large Hadron Collider and The Experiments for Run 3
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3.
Etude et mise en œuvre de cellules résistantes aux radiations dans le cadre de l'évolution du détecteur à pixels d'ATLAS en technologie CMOS 65 nm / Fougeron, Denis
The 65 nm CMOS technology is a promising technology for the pixel readout chips at HL-LHC in terms of high integration density [...]
CERN-THESIS-2020-403 - 129 p.

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4.
Development of a large pixel chip demonstrator in RD53 for ATLAS and CMS upgrades / Conti, Elia (CERN) ; Barbero, Marlon (Marseille, CPPM) ; Fougeron, Denis (Marseille, CPPM) ; Godiot, Stephanie (Marseille, CPPM) ; Menouni, Mohsine (Marseille, CPPM) ; Pangaud, Patrick (Marseille, CPPM) ; Rozanov, Alexandre (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Bomben, Marco (Paris U., VI-VII) ; Calderini, Giovanni (Paris U., VI-VII) et al. /RD53
RD53A is a large scale 65 nm CMOS pixel demonstrator chip that has been developed by the RD53 collaboration for very high rate (3 GHz/cm$^2$) and very high radiation levels (500 Mrad, possibly 1 Grad) for ATLAS and CMS phase 2 upgrades. It features serial powering operation and design variations in the analog and digital pixel matrix for different testing purposes. [...]
SISSA, 2017 - 5 p. - Published in : PoS TWEPP-17 (2017) 005 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.005
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5.
A study of SEU-tolerant latches for the RD53A chip / Fougeron, Denis (Marseille, CPPM) /RD53
The RD53 collaboration was established to develop the next generation of pixel readout chips needed by ATLAS and CMS at the HL-LHC and requiring extreme rate and radiation tolerance. The 65 nm CMOS process has been adopted in order to satisfy the high level of integration requirement. [...]
SISSA, 2018 - 5 p. - Published in : PoS TWEPP-17 (2018) 095 Fulltext: PDF; External link: PoS server
In : Topical Workshop on Electronics for Particle Physics, Santa Cruz, Ca, United States Of America, 11 - 15 Sep 2017, pp.095
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6.
High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments / Peric, Ivan (Heidelberg U.) ; Augustin, Heiko (Heidelberg U.) ; Backhaus, Malte (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Benoit, Mathieu (CERN) ; Berger, Niklaus (Heidelberg U.) ; Bompard, Frederic (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Clemens, Jean-Claude (Marseille, CPPM) ; Dannheim, Dominik (CERN) et al.
High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated [...]
2013 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 731 (2013) 131-136
In : 6th International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, Inawashiro, Japan, 3 - 7 Sep 2012, pp.131-136
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7.
Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip / ATLAS IBL Collaboration
The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. [...]
arXiv:1209.1906; AIDA-PUB-2012-010.- 2012 - 45 p. - Published in : JINST 7 (2012) P11010 Fulltext: PDF; External link: Preprint
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8.
The FE-I4 Pixel Readout Chip and the IBL Module / Barbero, Marlon (University of Bonn) ; Arutinov, David (University of Bonn) ; Backhaus, Malte (University of Bonn) ; Fang, Xiaochao (University of Bonn) ; Gonella, Laura (University of Bonn) ; Hemperek, Tomasz (University of Bonn) ; Karagounis, Michael (University of Bonn) ; Krueger, Hans (University of Bonn) ; Kruth, Andre (University of Bonn) ; Wermes, Norbert (University of Bonn) et al.
FE-I4 is the new ATLAS pixel readout chip for the upgraded ATLAS pixel detector. [...]
AIDA-CONF-2015-044. - 2011.
Full text
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9.
FE-I4 ATLAS pixel chip design / Barbero, Marlon (Bonn U.) ; Arutinov, David (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Karagounis, Michael (Bonn U.) ; Kruth, Andre (Bonn U.) ; Wermes, Norbert (Bonn U.) ; Beccherle, Roberto (INFN, Genoa) ; Darbo, Giovanni (INFN, Genoa) ; Dube, Sourabh (LBL, Berkeley) ; Elledge, David (LBL, Berkeley) et al.
2009 - 10 p. - Published in : PoS VERTEX2009 (2009) 027 External link: Published version from PoS
In : 18th International Workshop on Vertex Detectors and related techniques, Veluwe, Netherlands, 13 - 18 Sep 2009, pp.027
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3 Fougeron, D.
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