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CERN Document Server 17 εγγραφές βρέθηκαν  1 - 10επόμενο  μετάβαση στην εγγραφή: Η έρευνα πήρε 0.84 δευτερόλεπτα. 
1.
Radiation hardness of amorphous silicon particle sensors / Wyrsch, N (U. Neuchatel (main)) ; Miazza, C (U. Neuchatel (main)) ; Dunand, S (U. Neuchatel (main)) ; Ballif, C (U. Neuchatel (main)) ; Shah, A (U. Neuchatel (main)) ; Despeisse, M (CERN) ; Moraes, D (CERN) ; Powolny, F (CERN) ; Jarron, P (CERN)
Radiation tests of 32 $\mu \mathrm{m}$ thick hydrogenated amorphous silicon n–i–p diodes have been performed using a high-energy 24 GeV proton beam up to fluences of $2 \times 10^{16}$ protons/cm$^2$. The results are compared to irradiation of similar 1 $\mu \mathrm{m}$ and 32 $\mu \mathrm{m}$ thick n–i–p diodes using a proton beam of 405 keV at a fluence of $3 \times 10^{13}$ protons/cm$^2$. [...]
2006 - 4 p. - Published in : J. Noncryst. Solids 352 (2006) 1797-1800
2.
Multi-Channel Amplifier-Discriminator for Highly Time-Resolved Detection / Despeisse, M (Ecole Polytechnique, Lausanne) ; Powolny, F (CERN) ; Lapington, J (Leicester U.) ; Jarron, P (CERN)
A low-power multi-channel amplifier-discriminator was developed for application in highly time-resolved detection systems. The proposed circuit architecture, so-called Nino, is based on a time-over-threshold approach and shows a high potential for time-resolved readout of solid-state photo-detectors and of detectors based on vacuum technologies. [...]
2011 - Published in : IEEE Trans. Nucl. Sci. 58 (2011) 202-208 IEEE Published version, local copy: PDF;
3.
Increased Speed: 3D Silicon Sensors; Fast Current Amplifiers / Parker, S (LBL, Berkeley ; Hawaii U.) ; Kok, A (INTEF, Oslo) ; Hasi, J (SLAC) ; Da Via, C (Manchester U.) ; Despeisse, M (Ecole Polytechnique, Lausanne) ; Anelli, G (CERN) ; Kenney, C (SLAC) ; Jarron, P (CERN)
The authors describe techniques to make fast, sub-nanosecond time resolution solid-state detector systems using sensors with 3D electrodes, current amplifiers, constant-fraction comparators or fast wave-form recorders, and some of the next steps to reach still faster results..
2011 - Published in : IEEE Trans. Nucl. Sci. 58 (2011) 404-417 IEEE Published version, local copy: PDF;
4.
A time driven readout scheme for PET and CT using APDs and SiPMs / Powolny, F (CERN) ; Auffray, E (CERN) ; Brunner, S (CERN) ; Condorelli, G (STMicroelectronics, Catania) ; Despeisse, M (CERN) ; Fallica, G (STMicroelectronics, Catania) ; Hillemanns, H (CERN) ; Jarron, P (CERN) ; Kluge, A (CERN) ; Lecoq, P (CERN) et al.
In this paper we present the time-driven readout scheme for photodetectors in the domain of PET/CT applications. In our first test period as partner of the BioCare Consortium supported by the European Commission's FP6 framework program, we put emphasis on a scheme to be used with a LSO-APD detector suitable for both CT and PET, using exclusively electronics circuits developed for the LHC program at CERN. [...]
2010 - Published in : Nucl. Instrum. Methods Phys. Res., A 617 (2010) 232-236
In : 11th Pisa Meeting on Advanced Detectors on Frontier Detectors For Frontier Physics, La Biodola, Italy, 24 - 30 May 2009, pp.232-236
5.
A high-throughput, multi-channel photon-counting detector with picosecond timing / Lapington, J S (Leicester U.) ; Fraser, G W (Leicester U.) ; Miller, G M (Leicester U.) ; Ashton, T J R (Leicester U.) ; Jarron, P (CERN) ; Despeisse, M (CERN) ; Powolny, F (CERN) ; Howorth, J (Photek Ltd., St. Leonards-on-Sea, UK) ; Milnes, J (Photek Ltd., St. Leonards-on-Sea, UK)
High-throughput photon counting with high time resolution is a niche application area where vacuum tubes can still outperform solid-state devices. Applications in the life sciences utilizing time-resolved spectroscopies, particularly in the growing field of proteomics, will benefit greatly from performance enhancements in event timing and detector throughput. [...]
2009 - Published in : Nucl. Instrum. Methods Phys. Res., A 604 (2009) 199-201
6.
Low-Power Amplifier-Discriminators for High Time Resolution Detection / Despeisse, M (CERN) ; Jarron, P (CERN) ; Anghinolfi, F (CERN) ; Tiuraniemi, S (CERN) ; Osmic, F (CERN) ; Riedler, P (CERN) ; Kluge, A (CERN) ; Ceccucci, A (CERN)
Low-power amplifier-discriminators based on a so-called NINO architecture have been developed with high time resolution for the readout of radiation detectors. Two different circuits were integrated in the NINO13 chip, processed in IBM 130 nm CMOS technology. [...]
2009 - Published in : IEEE Trans. Nucl. Sci. 56 (2009) 375-381 IEEE Published version, local copy: PDF;
In : 2008 IEEE Nuclear Science Symposium, Medical Imaging Conference and 16th Room Temperature Semiconductor Detector Workshop, Dresden, Germany, 19 - 25 Oct 2008, pp.1095-1101
7.
A multi-channel high time resolution detector for high content imaging / Lapington, J S (Leicester U.) ; Fraser, G W (Leicester U.) ; Miller, G M (Leicester U.) ; Ashton, T J R (Leicester U.) ; Jarron, P (CERN) ; Despeisse, M (CERN) ; Powolny, F (CERN) ; Howorth, J (Instrument Tech., St. Leonard) ; Milnes, J (Instrument Tech., St. Leonard)
Medical imaging has long benefited from advances in photon counting detectors arising from space and particle physics. We describe a microchannel plate-based detector system for high content (multi-parametric) analysis, specifically designed to provide a step change in performance and throughput for measurements in imaged live cells and tissue for the ‘omics’. [...]
2009 - Published in : Nucl. Instrum. Methods Phys. Res., A 610 (2009) 123-127
8.
Low noise, low power front end electronics for pixelized TFA sensors / Poltorak, K (CERN) ; Ballif, C (EPFL, Lausanne) ; Dabrowski, W (AGH-UST, Cracow) ; Despeisse, M (EPFL, Lausanne) ; Jarron, P (CERN) ; Kaplon, J (CERN) ; Wyrschb, N (EPFL, Lausanne)
Thin Film on ASIC (TFA) technology combines advantages of two commonly used pixel imaging detectors, namely, Monolithic Active Pixels (MAPs) and Hybrid Pixel detectors. Thanks to direct deposition of a hydrogenated amorphous silicon (a- Si:H) sensor lm on top of the readout ASIC, TFA shows the similarity to MAP imagers, allowing, however, more sophisticated front–end circuitry to extract the signals, like in case of Hybrid Pixel technology. [...]
CERN, 2009 Published version from CERN: PDF;
In : Topical Workshop on Electronics for Particle Physics, Paris, France, 21 - 25 Sep 2009, pp.72-78 (CERN-2009-006)
9.
Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection / Despeisse, M (CERN) ; Anelli, G (CERN) ; Jarron, P (CERN) ; Kaplon, J (CERN) ; Moraes, D (CERN) ; Nardulli, A (Zurich, ETH) ; Powolny, F (CERN) ; Wyrsch, N (Neuchatel U.)
Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. [...]
2008 - Published in : IEEE Trans. Nucl. Sci. 55 (2008) 802-811 IEEE Published version, local copy: PDF;
10.
Hydrogenated amorphous silicon sensors based on thin film on ASIC technology / Despeisse, M (CERN) ; Moraes, D ; Anelli, G ; Jarron, P ; Kaplon, J ; Rusack, R ; Saramad, S ; Wyrsch, N
The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. [...]
2006
In : 52nd IEEE Nuclear Science Symposium and Medical Imaging Conference, San Juan, Puerto Rico, 23 - 29 Oct 2005, pp.1389-1394

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