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1.
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CMOS SPADs for High Radiation Environments
/ Wu, Ming-Lo (Ecole Polytechnique, Lausanne) ; Gramuglia, Francesco (Ecole Polytechnique, Lausanne) ; Ripiccini, Emanuele (Ecole Polytechnique, Lausanne) ; Fenoglio, Carlo Alberto (Ecole Polytechnique, Lausanne) ; Kizilkan, Ekin (Ecole Polytechnique, Lausanne) ; Keshavarzian, Pouyan (Ecole Polytechnique, Lausanne) ; Morimoto, Kazuhiro (Ecole Polytechnique, Lausanne) ; Paolozzi, Lorenzo (Geneva U. ; CERN) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne)
We first characterized large 180 nm CMOS single-photon avalanche diode (SPAD) imagers under 10 and 100 MeV protons irradiation up to a displacement damage dose of 1 PeV/g. [...]
2022. - 3 p.
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2.
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Quad-module characterization with the MALTA monolithic pixel chip
/ Dachs, F (CERN) ; Zoubir, A M (Darmstadt, Tech. U.) ; Sharma, A (CERN) ; Solans Sanchez, C (CERN) ; Buttar, C M (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Dobrijevic, D (Zagreb U.) ; Berlea, D -V (DESY) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Piro, F (CERN) et al.
The MALTA silicon pixel detector combines a depleted monolithic active pixel sensor (DMAPS) with a fully asynchronous front-end and readout. It features a high granularity pixel matrix with a 36.4 μm symmetric pixel pitch, low power consumption of <1 μW/pixel and low material budget with detector thicknesses as little as 50 μm. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169306
In : PSD13: The 13th International Conference on Position Sensitive Detectors, Oxford, United Kingdom, 3 - 9 Sep 2023, pp.169306
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3.
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Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications
/ Berlea, D V (DESY, Zeuthen ; Humboldt U., Berlin (main)) ; Allport, P (Birmingham U.) ; Tortajada, I Asensi (CERN) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizili, H (Abant Izzet Baysal U.) ; Dobrijevic, D (CERN) et al.
MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to lower material budget and ease of integration and construction costs due to the integration of read-out and active sensor into one ASIC. [...]
2023 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2303-2309
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4.
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A Compact Front-End Circuit for a Monolithic Sensor in a 65-nm CMOS Imaging Technology
/ Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Rinella, G Aglieri (CERN) ; Andronic, A (U. Munster) ; Antonelli, M (INFN, Trieste) ; Aresti, M (Cagliari U. ; INFN, Cagliari) ; Baccomi, R (INFN, Trieste) ; Becht, P (Heidelberg U.) ; Beolè, S (Turin U. ; INFN, Turin) ; Braach, J (CERN) ; Buckland, M D (INFN, Trieste ; Trieste U.) et al.
This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (< 2 fF) collection electrode and is integrated into the DPTS chip, a proof-of-principle prototype of 1.5×1.5 mm including a matrix of 32×32 pixels with a pitch of 15μm . [...]
2023 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2191-2200
Fulltext: PDF;
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5.
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Optimization of a 65 nm CMOS imaging process for monolithic CMOS sensors for high energy physics
/ Rinella, G Aglieri (CERN) ; Andronic, A (Munster U., ITP) ; Antonelli, M (INFN, Trieste ; Trieste U.) ; Baccomi, R (INFN, Trieste ; Trieste U.) ; Ballabriga, R (CERN) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Baudot, J (Strasbourg, IPHC) ; Becht, P (Heidelberg U.) ; Benotto, F (INFN, Turin ; Turin U.) et al.
The long term goal of the CERN Experimental Physics Department R&D; on monolithic sensorsis the development of sub-100nm CMOS sensors for high energy physics. The first technologyselected is the TPSCo 65nm CMOS imaging technology. [...]
2023 - 15 p.
- Published in : PoS Pixel2022 (2023) 083
Fulltext: PDF;
In : 10th International Workshop on Semiconductor Pixel Detectors for Tracking and Imaging (PIXEL 2022), Santa Fe, USA, 11 - 16 Dec 2022, pp.083
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6.
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Design of an analog monolithic pixel sensor prototype in TPSCo 65 nm CMOS imaging technology
/ Deng, W (Hua-Zhong Normal U. ; CERN) ; Aglieri Rinella, G (CERN) ; Aresti, M (Catania U. ; INFN, Catania) ; Baudot, J (Strasbourg, IPHC) ; Benotto, F (INFN, Turin ; Turin U.) ; Beole, S (INFN, Turin ; Turin U.) ; Bialas, W (CERN) ; Borghello, G (CERN) ; Bugiel, S (Strasbourg, IPHC) ; Campbell, M (CERN) et al.
A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process in the framework of the CERN-EP R&D; on monolithic sensors and the ALICE ITS3 upgrade project. Each APTS chip contains a 4 × 4 pixel matrix with fast analog outputs buffered to individual pads. [...]
2023 - 9 p.
- Published in : JINST 18 (2023) C01065
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C01065
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7.
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Performance of the MALTA Telescope
/ van Rijnbach, Milou (CERN ; Oslo U.) ; Gustavino, Giuliano (CERN) ; Allport, Phil (Birmingham U.) ; Asensi, Igancio (CERN) ; Berlea, Dumitru Vlad (DESY, Zeuthen) ; Bortoletto, Daniela (Oxford U.) ; Buttar, Craig (Glasgow U.) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne) ; Dachs, Florian (CERN) ; Dao, Valerio (CERN) et al.
MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under test. [...]
arXiv:2304.01104.-
2023-07-08 - 22 p.
- Published in : Eur. Phys. J. C 83 (2023) 581
Fulltext: 2304.01104 - PDF; document - PDF;
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8.
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Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs
/ Gramuglia, Francesco (Ecole Polytechnique, Lausanne) ; Ripiccini, Emanuele (Ecole Polytechnique, Lausanne) ; Fenoglio, Carlo Alberto (Ecole Polytechnique, Lausanne) ; Wu, Ming-Lo (Ecole Polytechnique, Lausanne) ; Paolozzi, Lorenzo (Geneva U. ; CERN) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne)
Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon avalanche diodes (SPADs), for the detection of minimum ionizing particles (MIPs) with best-in-class timing resolution. [...]
arXiv:2111.09998; 4035033.-
2022-05-11 - 8 p.
- Published in : Front. Phys. 10 (2022) 849237
Fulltext: 2111.09998 - PDF; Publication - PDF;
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9.
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MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
/ Pernegger, H. (CERN) ; Allport, P. (Birmingham U.) ; Berlea, D.V. (DESY, Zeuthen) ; Birman, A. (Technion) ; Bortoletto, D. (Oxford U.) ; Buttar, C. (Glasgow U.) ; Charbon, E. (LPHE, Lausanne) ; Dachs, F. (CERN) ; Dao, V. (CERN) ; Denizli, H. (Abant Izzet Baysal U.) et al.
Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. [...]
arXiv:2301.03912.-
2023-09-13 - 24 p.
- Published in : JINST 18 (2023) P09018
Fulltext: 2301.03912 - PDF; Publication - PDF;
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10.
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Development of a large-area, light-weight module using the MALTA monolithic pixel detector
/ Dachs, F (CERN) ; Allport, P (Birmingham U.) ; Asensi Tortajada, I (CERN) ; Berlea, D V (DESY) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Dao, V (CERN) ; Denizli, H (Abant Izzet Baysal U.) ; Dobrijevic, D (CERN ; Zagreb U.) et al.
The MALTA pixel chip is a 2 cm × 2 cm large monolithic pixel detector developed in the Tower 180 nm imaging process. The chip contains four CMOS transceiver blocks at its sides which allow chip-to-chip data transfer. [...]
2023 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167809
Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167809
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