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Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
/ Caicedo, Ivan (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Berdalovic, Ivan (CERN) ; Breugnon, Patrick (Marseille, CPPM) ; Cardella, Roberto (CERN) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; de Acedo, Leyre Flores Sanz (CERN) et al.
“LF-Monopix2” and “TJ-Monopix2” are the second generation of “Monopix” Depleted Monolithic Active Pixel Sensor prototypes fabricated in 150 nm and 180 nm CMOS processes, respectively. Both devices implement a fully functional column-drain read-out architecture at a reticle-size scale, but differ on the concept used for pixel design. [...]
2024 - 13 p.
- Published in : JPS Conf. Proc. 42 (2024) 011021
Fulltext: PDF;
In : The International Workshop on Vertex Detectors (VERTEX 2022), Tateyama, Japan, 24 - 28 Oct 2022, pp.011021
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Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
/ Hügging, Fabian (Bonn U.) ; Barbero, Marlon (Marseille, CPPM) ; Barrilon, Pierre (Marseille, CPPM) ; Bespin, Christian (Bonn U.) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Degerli, Yavuz (IRFU, Saclay) ; Dingfelder, Jochen (Bonn U.) ; Hemperek, Tomasz (Bonn U.) ; Hirono, Toko (Bonn U.) et al.
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector concept. The increasing availability of high-resistivity substrates and high-voltage capabilities in commercial CMOS processes facilitates the application of depleted monolithic active pixel sensors (DMAPS) in modern particle physics experiments. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1070 (2025) 170007
Fulltext: PDF;
In : 16th Pisa Meeting on Advanced Detectors (Pisameet 2024), La Biodola, Isola D'elba, Italy, 26 May - 1 Jun 2024, pp.170007
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Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes
/ Tortajada, I Asensi (CERN ; Valencia U.) ; Allport, P (Birmingham U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN ; Zagreb U., Phys. Dept.) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Bortoletto, D (Oxford U. ; JAI, UK) ; Breugnon, P (Marseille, CPPM) ; Buttar, C (Glasgow U.) et al.
This contribution will present the latest developments after the MALTA and Mini-MALTA sensors. It will illustrate the improvements and results of the Czochralski substrate with a bigger depletion zone to improve efficiency. [...]
2021 - 8 p.
- Published in : JPS Conf. Proc. 34 (2021) 010009
Fulltext: PDF;
In : 29th International Workshop on Vertex Detectors, Virtual, Japan, 5 - 8 Oct 2020, pp.010009
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Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology
/ Dingfelder, J (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Degerli, Y (IRFU, Saclay) ; Flores Sanz de Acedo, L (CERN) et al.
Depleted Monolithic Active Pixel Sensors (DMAPS) are monolithic pixel detectors with high-resistivity substrates designed for use in high-rate and high-radiation environments. They are produced in commercial CMOS processes, resulting in relatively low production costs and short turnaround times, and offer a low material budget. [...]
2022 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1034 (2022) 166747
In : 30th International Workshop on Vertex Detectors (VERTEX 2021), Online, UK, 27 - 30 Sep 2021, pp.166747
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Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies
/ Wang, T (Bonn U.) ; Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Berdalovic, I (CERN) ; Bespin, C (Bonn U.) ; Bhat, S (Marseille, CPPM) ; Breugnon, P (Marseille, CPPM) ; Caicedo, I (Bonn U.) ; Cardella, R (CERN) ; Chen, Z (Marseille, CPPM) et al.
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. [...]
SISSA, 2020 - 10 p.
- Published in : PoS Vertex2019 (2020) 026
Fulltext from Publisher: PDF;
In : Vertex 2019: 28th International Workshop on Vertex Detectors, Lopud Island, Croatia, 13 - 18 Oct 2019, pp.026
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Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC
/ Pernegger, H. (CERN) ; Allport, P. (Birmingham U.) ; Asensi Tortajada, I. (CERN ; Valencia U.) ; Barbero, M. (Marseille, CPPM) ; Barrillon, P. (Marseille, CPPM) ; Berdalovic, I. (CERN ; Zagreb U.) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Bortoletto, D. (Oxford U.) ; Breugnon, P. (Marseille, CPPM) et al.
The upgrade of the tracking detectors for the High Luminosity-LHC (HL-LHC) requires the development of novel radiation hard silicon sensors. The development of Depleted Monolithic Active Pixel Sensors targets the replacement of hybrid pixel detectors with radiation hard monolithic CMOS sensors. [...]
2021-01-11 - 7 p.
- Published in : Nucl. Instrum. Methods Res. Phys., A 986 (2021) 164381
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164381
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Radiation hard DMAPS pixel sensors in 150 nm CMOS technology for operation at LHC
/ Barbero, M. (Marseille, CPPM) ; Barrillon, Pierre (Marseille, CPPM) ; Bespin, C. (Bonn U.) ; Bhat, S. (Marseille, CPPM) ; Breugnon, Patrick (Marseille, CPPM) ; Caicedo, Ivan (Bonn U.) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) ; Dingfelder, J. (Bonn U.) ; Godiot, Stephanie (Marseille, CPPM) et al.
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. [...]
arXiv:1911.01119.-
2020-05-22 - 22 p.
- Published in : JINST
Fulltext: PDF;
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DMAPS Monopix developments in large and small electrode designs
/ Bespin, C. (Bonn U.) ; Barbero, M. (Marseille, CPPM) ; Barrillon, P. (Marseille, CPPM) ; Berdalovic, I. (CERN) ; Bhat, S. (Marseille, CPPM) ; Breugnon, P. (Marseille, CPPM) ; Caicedo, I. (Bonn U.) ; Cardella, R. (CERN) ; Chen, Z. (Marseille, CPPM) ; Degerli, Y. (IRFU, Saclay) et al.
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). [...]
arXiv:2006.02297.-
2020-10-21 - 7 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 978 (2020) 164460
In : 12th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD), Hiroshima, Japan, 14 - 18 Dec 2019, pp.164460
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