A 21-26-GHz SiGe bipolar power amplifier MMIC
TSD Cheung, JR Long - IEEE Journal of Solid-State Circuits, 2005 - ieeexplore.ieee.org
TSD Cheung, JR Long
IEEE Journal of Solid-State Circuits, 2005•ieeexplore.ieee.orgA three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/= 120 GHz 0.2/spl
mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output
power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The
differential common-base topology extends the supply to BV/sub CEO/of the transistors (1.8
V). New on-chip components, such as onchip interconnects with floating differential shields,
and self-shielding four-way power combining/dividing baluns provide inter-stage coupling …
mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output
power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The
differential common-base topology extends the supply to BV/sub CEO/of the transistors (1.8
V). New on-chip components, such as onchip interconnects with floating differential shields,
and self-shielding four-way power combining/dividing baluns provide inter-stage coupling …
A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.
ieeexplore.ieee.org