User profiles for Toru Tanzawa

Toru Tanzawa

Professor, Waseda university, IEEE Fellow
Verified email at ieee.org
Cited by 9185

A dynamic analysis of the Dickson charge pump circuit

T Tanzawa, T Tanaka - IEEE Journal of solid-state circuits, 1997 - ieeexplore.ieee.org
Dynamics of the Dickson charge pump circuit are analyzed. The analytical results enable
the estimation of the rise time of the output voltage and that of the power consumption during …

A compact on-chip ECC for low cost flash memories

T Tanzawa, T Tanaka, K Takeuchi… - IEEE Journal of Solid …, 1997 - ieeexplore.ieee.org
A compact on-chip error correcting circuit (ECC) for low cost flash memories has been
developed. The total increase in chip area is 2%, including all cells, sense amplifiers, logic, and …

A CMOS bandgap reference circuit with sub-1-V operation

…, A Umezawa, T Miyaba, T Tanzawa… - IEEE Journal of Solid …, 1999 - ieeexplore.ieee.org
This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully
operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the …

On two-phase switched-capacitor multipliers with minimum circuit area

T Tanzawa - IEEE Transactions on Circuits and Systems I …, 2010 - ieeexplore.ieee.org
This paper compares the performance among two-phase switched-capacitor multipliers to
identify the optimum topology with the smallest circuit area. The optimum number of stages is …

Circuit techniques for a 1.8-V-only NAND flash memory

T Tanzawa, T Tanaka, K Takeuchi… - IEEE Journal of Solid …, 2002 - ieeexplore.ieee.org
Focusing on internal high-voltage (V/sub pp/) switching and generation for low-voltage
NAND flash memories, this paper describes a V/sub (pp)/ switch, row decoder, and charge-pump …

A multipage cell architecture for high-speed programming multilevel NAND flash memories

…, T Tanaka, T Tanzawa - IEEE Journal of Solid-State …, 1998 - ieeexplore.ieee.org
To realize low-cost, highly reliable, high-speed programming, and high-density multilevel
flash memories, a multipage cell architecture has been proposed. This architecture enables …

[BOOK][B] On-chip high-voltage generator design

T Tanzawa - 2013 - Springer
Accordingly, as silicon technology has been advanced, more and more functionalities have
been integrated into LSIs. On-chip multiple voltage generation is becoming one of big …

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

…, F Pan, Y Einaga, A Ghalam, T Tanzawa… - … Solid-State Circuits …, 2016 - ieeexplore.ieee.org
A planar floating-gate NAND technology has previously realized a 0.87Gb/mm2 memory
density using 3b/cell [1] and achieved a minimum feature size for 16nm [2]. However, the …

Optimization of word-line booster circuits for low-voltage flash memories

T Tanzawa, S Atsumi - IEEE Journal of Solid-State Circuits, 1999 - ieeexplore.ieee.org
Two word-line booster circuits, which output a word-line voltage for reading dash memory
data, are analyzed and optimized. A capacitor-switched booster circuit outputs a voltage …

Quantum mechanics of a particle on a curved surface: comparison of three different approaches

…, Y Nagaoka, S Takagi, T Tanzawa - Progress of theoretical …, 1992 - academic.oup.com
When quantum mechanical motion of a particle constrained to a curved surface in the Euclidean
space is considered, three different approaches may be adopted to describe the system…