In partially depleted SOI (PD-SOI) technology, the SCR-based protection device is desired due to its relatively high robustness, but be restricted to use because of its inherent low holding voltage (V_h) and high triggering voltage (V_t1). In this paper, the body-tie side triggering diode inserting silicon controlled rectifier (BSTDISCR) is proposed and verified in 180 nm PD-SOI technology. Compared to the other devices in the same process and other related works, the BSTDISCR presents as a robust and latchup-immune PD-SOI ESD protection device, with appropriate V_t1 of 6.3 V, high V_h of 4.2 V, high normalized second breakdown current (I_t2), which indicates the ESD protection robustness, of 13.3 mA/µm, low normalized parasitic capacitance of 0.74 fF/µm.