AlxGa1− xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
We report on Al x Ga 1− x N-based solar-blind ultraviolet (UV) photodetector (PD) grown on
Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
Al {sub x} Ga {sub 1− x} N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho, B Rahnema… - Applied Physics …, 2013 - osti.gov
We report on Al {sub x} Ga {sub 1− x} N-based solar-blind ultraviolet (UV) photodetector
(PD) grown on Si (111) substrate. First, Si (111) substrate is patterned, and then …
(PD) grown on Si (111) substrate. First, Si (111) substrate is patterned, and then …
[CITATION][C] AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho, B Rahnema… - Applied Physics …, 2013 - cir.nii.ac.jp
Al<sub>x</sub>Ga<sub>1−x</sub>N-based solar-blind ultraviolet photodetector based on
lateral epitaxial overgrowth of AlN on Si substrate | CiNii Research CiNii 国立情報学研究所 …
lateral epitaxial overgrowth of AlN on Si substrate | CiNii Research CiNii 国立情報学研究所 …
[PDF][PDF] Al x Ga N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho, B Rahnema… - Applied Physics …, 2013 - researchgate.net
We report on AlxGa1ÀxN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si
(111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical vapor …
(111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical vapor …
AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho… - Applied Physics …, 2013 - scholars.northwestern.edu
We report on Al x Ga 1-x N-based solar-blind ultraviolet (UV) photodetector (PD) grown on
Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
AlxGa1− xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho, B Rahnema… - Applied Physics …, 2013 - pubs.aip.org
We report on AlxGa1ÀxN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si
(111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical vapor …
(111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical vapor …
AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho, B Rahnema… - Applied Physics …, 2013 - inis.iaea.org
[en] We report on Al x Ga 1− x N-based solar-blind ultraviolet (UV) photodetector (PD) grown
on Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
on Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate
E Cicek, R McClintock, CY Cho… - Applied Physics …, 2013 - ui.adsabs.harvard.edu
We report on Al x Ga 1-x N-based solar-blind ultraviolet (UV) photodetector (PD) grown on
Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …
Si (111) substrate. First, Si (111) substrate is patterned, and then metalorganic chemical …