Advanced GaN HEMT technology for millimetre-wave amplifiers
A Dhongde - 2023 - theses.gla.ac.uk
Gallium Nitride (GaN)-based High-Electron-Mobility Transistor (HEMT) technology is a
breakthrough innovation in the semiconductor industry, offering high-frequency and high …
breakthrough innovation in the semiconductor industry, offering high-frequency and high …
Device physics and failure mechanisms of deep submicron gate GaN HEMTs for microwave and millimeter-wave applications
A CARLOTTO - thesis.unipd.it
This thesis presents the findings of a comprehensive characterization study on GaN-based,
gate-scaled HEMTs (with Lg< 0.15 µm) for RF applications. The investigation considers …
gate-scaled HEMTs (with Lg< 0.15 µm) for RF applications. The investigation considers …