Junction temperature monitoring (JTM) is essential for reliability evaluation and health
management for insulated-gate bipolar transistor (IGBT) modules, and thus is extensively …

Silicon carbide (SiC) power devices are promising in industrial applications. Junction
temperature monitoring is greatly significant for improving the reliability of devices and …

Junction temperature is the most important factor to induce the insulated gate bipolar
transistor module failure and conduct operational management. In-situ calibrated method …

The reliability of power electronic devices and converters is closely related to thermal stress.
However, the research on insulated gate bipolar transistor (IGBT) heat balance in the …

Online monitoring of junction temperature (T j) for insulated gate bipolar transistors (IGBTs)
is an important basis for life prediction and health management of IGBT devices. Because …

To reduce carbon dioxide emissions, wind power generation is receiving more attention.
The conversion of wind energy into electricity requires frequent use of insulated-gate bipolar …

Metal-oxide-semiconductor field-effect transistors (MOSFETs) undergo fatigue degradation
under high thermal and electrical stresses. This process results in changes in their parasitic …

Bond wire fault is one of the most prominent degradation types for silicon carbide (SiC)
mosfet s, which could be detected and monitored through appropriate precursors. In this …

Online temperature monitoring of IGBTs is a crucial means to enhance the reliability of high-
power converters. In the existing thermal model methods, the junction temperature is derived …

The junction temperature estimation of the insulated gate bipolar transistor (IGBT) module is
crucial for reliability assessment and health management of converters. However, most of …