Study of Gain Spatial Nonuniformity in n-on-p and p-on-n 4H-SiC Avalanche Photodiodes
T Li, Y Zhou, X Tao, W Xu, D Zhou… - IEEE Photonics …, 2024 - ieeexplore.ieee.org
In this work, the gain spatial nonuniformity within the active regions of n-on-p and p-on-n 4H-
SiC avalanche photodiodes are investigated by using both two-dimensional photocurrent …
SiC avalanche photodiodes are investigated by using both two-dimensional photocurrent …
Simulation of advanced semiconductor devices with 3D Monte Carlo
M Zhu - 2024 - search.proquest.com
The push to advance the capabilities of semiconductor devices relies on the continual
advancement of emerging materials and novel device structures. Due to the expensive costs …
advancement of emerging materials and novel device structures. Due to the expensive costs …