HXMT identification of a non-thermal X-ray burst from SGR J1935+ 2154 and with FRB 200428 CK Li, L Lin, SL Xiong, MY Ge, XB Li, TP Li, FJ Lu, SN Zhang, YL Tuo, ... Nature Astronomy 5 (4), 378-384, 2021 | 239 | 2021 |
Randomized sham-controlled trial of navigated repetitive transcranial magnetic stimulation for motor recovery in stroke RL Harvey, D Edwards, K Dunning, F Fregni, J Stein, J Laine, LM Rogers, ... Stroke, 2018 | 142 | 2018 |
Evaluation of ENTLN performance characteristics based on the ground truth natural and rocket‐triggered lightning data acquired in Florida Y Zhu, VA Rakov, MD Tran, MG Stock, S Heckman, C Liu, CD Sloop, ... Journal of Geophysical Research: Atmospheres 122 (18), 9858-9866, 2017 | 79 | 2017 |
Hot carrier reliability characterization in consideration of self-heating in FinFET technology M Jin, C Liu, J Kim, J Kim, S Choo, Y Kim, H Shim, L Zhang, K Nam, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 2A-2-1-2A-2-5, 2016 | 79 | 2016 |
UMass Boston comprehensive demographic questionnaire, revised KL Suyemoto, SM Erisman, DW Holowka, C Fuchs, H Barrett-Model, F Ng, ... Appendix in Wadsworth, LP, Morgan, LP, Hayes-Skelton, SA, Roemer, L …, 2016 | 69 | 2016 |
Comparison of interfacial reactions of Ni and Ni–P in extended contact with liquid Sn–Bi-based solders JF Li, SH Mannan, MP Clode, K Chen, DC Whalley, C Liu, DA Hutt Acta Materialia 55 (2), 737-752, 2007 | 68 | 2007 |
New insights into the hot carrier degradation (HCD) in FinFET: New observations, unified compact model, and impacts on circuit reliability Z Yu, J Zhang, R Wang, S Guo, C Liu, R Huang 2017 IEEE International Electron Devices Meeting (IEDM), 7.2. 1-7.2. 4, 2017 | 63 | 2017 |
Direct trifluoromethylthiolation reactions involving radical processes AL Barthelemy, E Magnier, G Dagousset Synthesis 50 (24), 4765-4776, 2018 | 62 | 2018 |
Hot disc of the Swift J0243.6+6124 revealed by Insight-HXMT V Doroshenko, SN Zhang, A Santangelo, L Ji, S Tsygankov, A Mushtukov, ... Monthly Notices of the Royal Astronomical Society 491 (2), 1857-1867, 2020 | 61 | 2020 |
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL C Liu, HC Sagong, H Kim, S Choo, H Lee, Y Kim, H Kim, B Jo, M Jin, ... 2015 IEEE International Reliability Physics Symposium, 2F. 3.1-2F. 3.5, 2015 | 48 | 2015 |
An evaluation of gravity waves and gravity wave sources in the Southern Hemisphere in a 7 km global climate simulation LA Holt, MJ Alexander, L Coy, C Liu, A Molod, W Putman, S Pawson Quarterly Journal of the Royal Meteorological Society 143 (707), 2481-2495, 2017 | 46 | 2017 |
The insight-HXMT mission and its recent progresses S Zhang, SN Zhang, FJ Lu, TP Li, LM Song, YP Xu, HY Wang, JL Qu, ... Space Telescopes and Instrumentation 2018: Ultraviolet to Gamma Ray 10699 …, 2018 | 44 | 2018 |
New insights into AC RTN in scaled high-к/metal-gate MOSFETs under digital circuit operations J Zou, R Wang, N Gong, R Huang, X Xu, J Ou, C Liu, J Wang, J Liu, J Wu, ... 2012 Symposium on VLSI Technology (VLSIT), 139-140, 2012 | 43 | 2012 |
In-orbit demonstration of X-ray pulsar navigation with the Insight-HXMT satellite SJ Zheng, SN Zhang, FJ Lu, WB Wang, Y Gao, TP Li, LM Song, MY Ge, ... The astrophysical journal supplement series 244 (1), 1, 2019 | 41 | 2019 |
Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance M Jin, C Liu, J Kim, J Kim, H Shim, K Kim, G Kim, S Lee, T Uemura, ... 2016 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2016 | 36 | 2016 |
Experimental study on quasi-ballistic transport in silicon nanowire transistors and the impact of self-heating effects R Wang, J Zhuge, C Liu, R Huang, DW Kim, D Park, Y Wang 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 35 | 2008 |
The evolution of the broadband temporal features observed in the black-hole transient MAXI J1820+ 070 with insight-HXMT Y Wang, L Ji, SN Zhang, M Méndez, JL Qu, P Maggi, MY Ge, E Qiao, ... The Astrophysical Journal 896 (1), 33, 2020 | 34 | 2020 |
New observations on complex RTN in scaled high-κ/metal-gate MOSFETs—The role of defect coupling under DC/AC condition P Ren, P Hao, C Liu, R Wang, X Jiang, Y Qiu, R Huang, S Guo, M Luo, ... 2013 IEEE International Electron Devices Meeting, 31.4. 1-31.4. 4, 2013 | 34 | 2013 |
A unified approach for trap-aware device/circuit co-design in nanoscale CMOS technology R Wang, M Luo, S Guo, R Huang, C Liu, J Zou, J Wang, J Wu, N Xu, ... 2013 IEEE International Electron Devices Meeting, 33.5. 1-33.5. 4, 2013 | 34 | 2013 |
Decoding grasp and speech signals from the cortical grasp circuit in a tetraplegic human SK Wandelt, S Kellis, DA Bjånes, K Pejsa, B Lee, C Liu, RA Andersen Neuron 110 (11), 1777-1787. e3, 2022 | 33 | 2022 |