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WO2022158305A1 - Plasma processing method and plasma processing device - Google Patents

Plasma processing method and plasma processing device Download PDF

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Publication number
WO2022158305A1
WO2022158305A1 PCT/JP2022/000252 JP2022000252W WO2022158305A1 WO 2022158305 A1 WO2022158305 A1 WO 2022158305A1 JP 2022000252 W JP2022000252 W JP 2022000252W WO 2022158305 A1 WO2022158305 A1 WO 2022158305A1
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WO
WIPO (PCT)
Prior art keywords
chamber
plasma processing
upper electrode
gas
voltage
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Application number
PCT/JP2022/000252
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French (fr)
Japanese (ja)
Inventor
太郎 池田
崇央 進藤
Original Assignee
東京エレクトロン株式会社
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Publication of WO2022158305A1 publication Critical patent/WO2022158305A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • An exemplary embodiment of the present disclosure relates to a plasma processing method and a plasma processing apparatus.
  • Patent Document 1 discloses a plasma processing apparatus using VHF waves as a type of plasma processing apparatus. VHF waves are applied to a radio frequency electrode to generate a plasma from the gas within the chamber.
  • the present disclosure provides a technique for uniforming the plasma density distribution within the chamber.
  • a plasma processing method includes step (a) of periodically applying a negative voltage to an upper electrode of a plasma processing apparatus.
  • the plasma processing method further includes step (b) of introducing an electromagnetic wave into the chamber of the plasma processing apparatus to generate plasma from the process gas within the chamber.
  • the electromagnetic waves are VHF waves or UHF waves.
  • An electromagnetic wave is introduced into the chamber so as to form a standing wave within the chamber along the lower surface of the upper electrode. Electromagnetic waves are introduced into the chamber only during the period in which the negative voltage is applied to the upper electrode.
  • FIG. 1 is a flow diagram of a plasma processing method according to one exemplary embodiment; 1 schematically illustrates a plasma processing apparatus according to one exemplary embodiment; FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2; FIG. 2 is an example timing chart related to the plasma processing method shown in FIG. 1; FIG. 2 is a timing chart of another example related to the plasma processing method shown in FIG. 1; FIG. FIG. 2 schematically illustrates a plasma processing apparatus according to another exemplary embodiment; FIG. 2 is a timing chart of still another example related to the plasma processing method shown in FIG. 1; FIG. FIG. 2 is a timing chart of still another example related to the plasma processing method shown in FIG. 1; FIG.
  • a plasma processing method includes step (a) of periodically applying a negative voltage to an upper electrode of a plasma processing apparatus.
  • the plasma processing method further includes step (b) of introducing an electromagnetic wave into the chamber of the plasma processing apparatus to generate plasma from the process gas within the chamber.
  • the electromagnetic waves are VHF waves or UHF waves.
  • An electromagnetic wave is introduced into the chamber so as to form a standing wave within the chamber along the lower surface of the upper electrode. Electromagnetic waves are introduced into the chamber only during the period in which the negative voltage is applied to the upper electrode.
  • the thickness of the sheath directly below the upper electrode increases. If the thickness of the sheath directly below the upper electrode is large, the wavelength of the electromagnetic wave along the lower surface of the upper electrode will be longer.
  • the electromagnetic wave is introduced into the chamber when the thickness of the sheath directly under the upper electrode is large, so the wavelength of the electromagnetic wave along the lower surface of the upper electrode becomes longer, and the plasma density in the chamber increases. The distribution is homogenized.
  • the negative voltage may be generated by shaping the waveform of the high frequency voltage to suppress the positive voltage contained in the high frequency voltage.
  • the electromagnetic wave may be introduced into the chamber during each period during which the negative voltage has an absolute value equal to or greater than half the maximum absolute value of the negative voltage.
  • the introduction of electromagnetic waves into the chamber begins at time t1 and ends at time t2 within each period in which a negative voltage is applied to the upper electrode.
  • Time points t1 and t2 satisfy t0 ⁇ t1 ⁇ t2 ⁇ t3 and satisfy t1-t0>(1/6)(t3-t0) and t3-t2>(1/6)(t3-t0) may
  • t0 and t3 are the start and end times of each period in which the negative voltage is applied to the upper electrode, respectively.
  • the negative voltage may be a negative DC voltage applied periodically to the upper electrode.
  • a positive DC voltage may be applied to the top electrode during periods when the negative voltage is not applied to the top electrode.
  • the absolute value of the negative DC voltage may be greater than the absolute value of the positive DC voltage.
  • the length of time DN during which the negative DC voltage is applied and the length of time DP during which the positive DC voltage is applied satisfy the following formula (1): good. may be satisfied.
  • VP is the level of the positive DC voltage applied to the top electrode
  • T e is the electron temperature in the plasma generated in the chamber.
  • the plasma processing method may further include supplying source gas into the chamber.
  • the process gas may be a reducing gas that reduces the source material deposited on the substrate from the source gas in the chamber.
  • the source gas and process gas may be simultaneously supplied into the chamber during the period in which the electromagnetic waves are introduced into the chamber.
  • the supply of the raw material gas into the chamber may be performed during the period when the electromagnetic wave is not introduced into the chamber, and stopped during the period when the electromagnetic wave is introduced into the chamber.
  • a plasma processing apparatus in another exemplary embodiment, includes a chamber, a substrate support, an upper electrode, a first power supply, and a second power supply.
  • a substrate support is provided within the chamber.
  • the upper electrode is provided above the substrate support.
  • a first power supply is configured to periodically apply a negative voltage to the upper electrode.
  • a second power supply is configured to generate electromagnetic waves to generate a plasma from the process gas within the chamber.
  • the electromagnetic wave which may be a VHF wave or a UHF wave, is introduced into the chamber to form a standing wave within the chamber along the lower surface of the upper electrode.
  • the second power supply is configured to introduce electromagnetic waves into the chamber only during periods in which the negative voltage is applied to the upper electrode.
  • the plasma processing apparatus further comprises an introduction section.
  • the lead-in portion may be formed from a dielectric material and may be provided along the outer periphery of the upper electrode so as to lead the electromagnetic wave therethrough into the chamber.
  • the top electrode may form a showerhead that introduces process gases into the chamber.
  • the first power supply may be configured to generate a high frequency voltage.
  • the plasma processing apparatus may further comprise a waveform shaper.
  • the waveform shaper is configured to shape the waveform of the high frequency voltage to suppress positive voltages contained in the high frequency voltage.
  • the first power supply may be configured to periodically apply a negative DC voltage to the upper electrode as the negative voltage.
  • FIG. 1 is a flow diagram of a plasma processing method according to one exemplary embodiment.
  • the plasma processing method (hereinafter referred to as "method MT") shown in FIG. 1 is performed using a plasma processing apparatus.
  • FIG. 2 is a diagram schematically showing a plasma processing apparatus according to one exemplary embodiment.
  • Method MT can be performed using the plasma processing apparatus 1 shown in FIG.
  • the plasma processing apparatus 1 is a parallel plate type plasma processing apparatus.
  • the plasma processing apparatus 1 is configured to generate plasma using electromagnetic waves.
  • the electromagnetic waves are VHF waves or UHF waves.
  • the band of VHF waves is 30 MHz to 300 MHz, and the band of UHF waves is 300 MHz to 3 GHz.
  • the plasma processing apparatus 1 includes a chamber 10.
  • Chamber 10 defines an interior space.
  • a substrate W is processed within the interior space of the chamber 10 .
  • the chamber 10 has an axis AX as its central axis.
  • the axis AX is an axis extending in the vertical direction.
  • chamber 10 may include chamber body 12 .
  • the chamber body 12 has a substantially cylindrical shape and is open at its upper portion. Chamber body 12 provides the sidewalls and bottom of chamber 10 .
  • the chamber body 12 is made of metal such as aluminum.
  • the chamber body 12 is grounded.
  • a side wall of the chamber body 12 provides a passage 12p.
  • the substrate W passes through the passageway 12p when being transported between the inside and outside of the chamber 10.
  • the passage 12p can be opened and closed by a gate valve 12v.
  • a gate valve 12 v is provided along the side wall of the chamber body 12 .
  • the chamber 10 may further include a top wall 14 .
  • Top wall 14 is formed from a metal such as aluminum.
  • the upper wall 14 closes the upper opening of the chamber main body 12 together with a cover conductor which will be described later.
  • the upper wall 14 is grounded together with the chamber body 12 .
  • Exhaust system 16 includes a pressure controller, such as an automatic pressure control valve, and a vacuum pump, such as a turbomolecular pump.
  • the plasma processing apparatus 1 further includes a substrate support section 18 .
  • a substrate support 18 is provided within the chamber 10 .
  • the substrate support 18 is configured to support the substrate W placed thereon.
  • the substrate W is placed on the substrate support 18 in a substantially horizontal state.
  • the substrate support section 18 may be supported by a support member 19 .
  • Support member 19 extends upwardly from the bottom of chamber 10 .
  • Substrate support 18 and support member 19 may be formed from a dielectric such as aluminum nitride.
  • the plasma processing apparatus 1 further includes an upper electrode 20 .
  • the upper electrode 20 is made of metal such as aluminum.
  • the upper electrode 20 is provided above the substrate support portion 18 .
  • the upper electrode 20 constitutes a ceiling that defines the internal space of the chamber 10 .
  • the upper electrode 20 may have a substantially disk shape.
  • the upper electrode 20 has an axis AX as its central axis.
  • the upper electrode 20 constitutes a showerhead.
  • the upper electrode 20 can have a hollow structure.
  • the upper electrode 20 provides a plurality of gas holes 20h.
  • a plurality of gas holes 20 h are open toward the internal space of the chamber 10 .
  • Top electrode 20 further provides a gas diffusion chamber 20c therein.
  • a plurality of gas holes 20h are connected to the gas diffusion chamber 20c and extend downward from the gas diffusion chamber 20c.
  • the plasma processing apparatus 1 may further include a gas supply pipe 22.
  • the gas supply pipe 22 is a cylindrical pipe.
  • the gas supply pipe 22 is made of metal such as aluminum.
  • the gas supply pipe 22 extends vertically above the upper electrode 20 .
  • the gas supply pipe 22 has an axis AX as its central axis.
  • the lower end of the gas supply pipe 22 is connected to the upper center of the upper electrode 20 .
  • the top center of the top electrode 20 provides the gas inlet.
  • the inlet is connected to the gas diffusion chamber 20c.
  • a gas supply pipe 22 supplies gas to the upper electrode 20 . Gas from the gas supply pipe 22 is introduced into the chamber 10 through the inlet of the upper electrode 20 and the gas diffusion chamber 20c through the plurality of gas holes 20h.
  • the plasma processing apparatus 1 may further include a gas supply section 24 , a gas supply section 26 and a gas supply section 28 .
  • the gas supply section 24 is connected to the gas supply pipe 22 .
  • the gas supply section 24 includes a gas source 24s, a primary valve 24v1, a flow controller 24c, and a secondary valve 24v2.
  • the gas source 24s is a source of raw material gas.
  • the source gas can be a silicon-containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) or a metal-containing gas such as a metal halide gas (eg, TiCl4 gas).
  • the gas source 24s is connected to the gas supply pipe 22 via a primary valve 24v1, a flow controller 24c, and a secondary valve 24v2.
  • the gas supply section 26 is connected to the gas supply pipe 22 .
  • the gas supply section 26 includes a gas source 26s, a primary valve 26v1, a flow controller 26c, and a secondary valve 26v2.
  • Gas source 26s is a source of process gas.
  • the process gas may be any gas selected to process the substrate W with species from the plasma generated therefrom.
  • the process gas may be a reducing gas that reduces the source material deposited on the substrate W from the source gas.
  • the process gas may be a reducing gas such as NH3 gas, N2 gas, H2 gas.
  • the gas source 26s is connected to the gas supply pipe 22 via a primary valve 26v1, a flow controller 26c, and a secondary valve 26v2.
  • the gas supply unit 28 is connected to the gas supply pipe 22 .
  • the gas supply section 28 includes a gas source 28s, a primary valve 28v1, a flow controller 28c, and a secondary valve 28v2.
  • Gas source 28s is a source of inert gas.
  • the inert gas can be a noble gas such as Ar gas.
  • the gas source 28s is connected to the gas supply pipe 22 via a primary valve 28v1, a flow controller 28c, and a secondary valve 28v2.
  • the upper electrode 20 may be provided below the upper wall 14 .
  • the space between top electrode 20 and top wall 14 forms part of waveguide 30 .
  • Waveguide 30 also includes a space provided by gas supply tube 22 between gas supply tube 22 and top wall 14 .
  • the plasma processing apparatus 1 may further include an introduction section 32 .
  • Lead-in 32 is formed from a dielectric such as aluminum oxide.
  • the introduction part 32 is provided along the outer circumference of the upper electrode 20 so as to introduce electromagnetic waves into the chamber 10 from there.
  • the introduction part 32 has an annular shape. The introduction part 32 closes the gap between the upper electrode 20 and the chamber body 12 and is connected to the waveguide 30 .
  • FIG. 3 is a cross-sectional view taken along line III--III of FIG.
  • the gas supply pipe 22 described above may include an annular flange 22f in a part of its longitudinal direction.
  • the collar portion 22f radially protrudes from the other portion 22a of the gas supply pipe 22. As shown in FIG.
  • the plasma processing apparatus 1 may further include an electromagnetic wave supply path 36 .
  • the supply line 36 includes a conductor 36c.
  • a conductor 36 c of the supply path 36 is connected to the gas supply pipe 22 .
  • one end of the conductor 36c is connected to the collar portion 22f.
  • the plasma processing apparatus 1 further includes a power supply 40 (second power supply).
  • the other end of the conductor 36c may be connected to the power supply 40 via the matching device 40m.
  • the power supply 40 is a generator of electromagnetic waves.
  • the matching box 40m has an impedance matching circuit.
  • the impedance matching circuit is configured to match the impedance of the load of power supply 40 to the output impedance of power supply 40 .
  • the impedance matching circuit has a variable impedance.
  • the impedance matching circuit can be, for example, a ⁇ -type circuit.
  • An electromagnetic wave from the power supply 40 is introduced into the chamber 10 so as to form a standing wave inside the chamber 10 along the lower surface of the upper electrode 20 .
  • the electromagnetic wave from the power source 40 passes through the matching device 40m, the supply path 36 (conductor 36c), the gas supply pipe 22, and the waveguide 30 around the upper electrode 20, from the introduction part 32 to the chamber 10. introduced within.
  • the electromagnetic waves excite the process gas from gas supply 26 in chamber 10 to generate plasma.
  • the plasma processing apparatus 1 may further include a cover conductor 44 and a dielectric portion 46.
  • the cover conductor 44 has a substantially cylindrical shape.
  • a cover conductor 44 surrounds the gas supply tube 22 above the chamber 10 .
  • the cover conductor 44 is connected to the gas supply pipe 22 at its upper end 44t. That is, the upper end 44 t of the cover conductor 44 closes the space between the cover conductor 44 and the gas supply pipe 22 .
  • a lower end of the cover conductor 44 is connected to the chamber 10 . In one embodiment, the lower end of cover conductor 44 may be connected to top wall 14 .
  • a cover conductor 44 may surround the conductor 36c. A space between the cover conductor 44 and the conductor 36c may be filled with a dielectric. This dielectric may be integrated with the dielectric portion 46 .
  • the dielectric portion 46 is made of a dielectric.
  • the dielectric portion 46 is made of, for example, polytetrafluoroethylene (PTFE).
  • PTFE polytetrafluoroethylene
  • the dielectric portion 46 is provided between a portion of the gas supply pipe 22 in the longitudinal direction and the cover conductor 44 .
  • the dielectric portion 46 radially extends from a portion of the gas supply pipe 22 in the longitudinal direction to the inner surface of the cover conductor 44 and extends circumferentially so as to surround the portion of the gas supply pipe 22 in the longitudinal direction. May be extended.
  • the dielectric portion 46 may be provided upward from the lower surface 22b of the collar portion 22f. That is, the vertical position of the lower end of the dielectric portion 46 may be the same as the vertical position of the lower surface 22b of the collar portion 22f.
  • a region between the lower surface 22b of the collar portion 22f and the upper end 44t of the cover conductor 44 in the space between the gas supply pipe 22 and the cover conductor 44 is a dielectric material.
  • the portion 46 may be filled.
  • the plasma processing apparatus 1 further includes a power supply 50 (first power supply).
  • Power supply 50 is configured to periodically apply a negative voltage to upper electrode 20 .
  • FIG. 4 and 5 will be referred to together with FIG. 2 below.
  • FIG. 4 is an example timing chart related to the plasma processing method shown in FIG.
  • FIG. 5 is a timing chart of another example related to the plasma processing method shown in FIG. 4 and 5, "LF" represents the high frequency voltage generated by the power supply 50.
  • FIG. A solid line representing the high-frequency voltage LF represents a negative voltage
  • a broken line representing the high-frequency voltage LF represents a positive voltage. 4 and 5
  • "ON" indicates that the corresponding gas is being supplied into the chamber 10
  • "OFF" indicates that the supply of the corresponding gas into the chamber 10 is stopped. indicates that
  • power supply 50 is a high frequency power supply and generates high frequency voltage LF as shown in FIGS.
  • the frequency of the high frequency voltage LF may be 400 kHz or higher and 13.56 MHz or lower.
  • the power supply 50 is connected to the upper electrode 20 through a matching box 50m.
  • the matching box 50m has an impedance matching circuit.
  • the impedance matching circuit is configured to match the impedance of the load of power supply 50 to the output impedance of power supply 50 .
  • the impedance matching circuit has a variable impedance.
  • the negative voltage of the high frequency voltage LF from the power supply 50 is applied to the upper electrode 20 .
  • a negative voltage is periodically applied to the upper electrode 20 .
  • the plasma processing apparatus 1 may further include a waveform shaper 50s.
  • the waveform shaper 50s is configured to shape the waveform of the high frequency voltage LF so as to suppress the positive voltage contained in the high frequency voltage LF.
  • the negative voltage of the high frequency voltage LF from the power supply 50 is applied to the upper electrode 20 .
  • wave shaper 50s may include a diode.
  • the anode of the diode of the waveform shaper 50 s is connected to the electrical path between the power supply 50 (or the matching device 50 m) and the upper electrode 20 .
  • the cathode of the diode of the waveform shaper 50s is connected to the ground.
  • the power supply 40 described above introduces electromagnetic waves into the chamber 10 only during the period PN in which the negative voltage is applied to the upper electrode 20 within the period CP of the high frequency voltage LF.
  • power supply 40 may be configured to introduce electromagnetic waves into chamber 10 only during periods P A within periods P N .
  • Period PA may be a period during which the negative voltage from power supply 50 has an absolute value equal to or greater than half the maximum absolute value of the negative voltage. Period PA starts at time t1 and ends at time t2.
  • Time points t1 and t2 satisfy t0 ⁇ t1 ⁇ t2 ⁇ t3 and satisfy t1-t0>(1/6)(t3-t0) and t3-t2>(1/6)(t3-t0) may
  • t0 and t3 are the start and end times of the period PN , respectively.
  • the plasma processing apparatus 1 may further include a controller 60 .
  • the control unit 60 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input/output interface, and the like.
  • the controller 60 controls each part of the plasma processing apparatus 1 .
  • a storage unit of the control unit 60 stores a control program and recipe data.
  • the control program is executed by the processor of the control unit 60 in order to perform various processes in the plasma processing apparatus 1.
  • the processor of the controller 60 executes the control program and controls each part of the plasma processing apparatus 1 according to the recipe data.
  • the method MT can be performed in the plasma processing apparatus 1 by controlling each section of the plasma processing apparatus 1 by the controller 60 .
  • the method MT includes steps STa and STb.
  • step STa a negative voltage is applied to the upper electrode 20 periodically.
  • the negative voltage is generated and applied to the top electrode 20 by shaping the waveform of the high frequency voltage LF from the power supply 50 to suppress the positive voltage.
  • step STb electromagnetic waves from the power supply 40 are introduced into the chamber 10 to generate plasma from the processing gas.
  • An electromagnetic wave is introduced into chamber 10 to form a standing wave along the lower surface of upper electrode 20 .
  • Electromagnetic waves are introduced into the chamber 10 only during the period PN during which the negative voltage from the power supply 50 is applied to the upper electrode 20 . In one embodiment, the electromagnetic waves are introduced into the chamber 10 only during the period PA mentioned above.
  • the processing gas is supplied from the gas supply unit 26 into the chamber 10 at least during the period when the step STb is performed. That is, the processing gas is supplied into the chamber 10 at least while the electromagnetic wave from the power supply 40 is being introduced into the chamber 10 .
  • the process gas and inert gas may be continuously supplied into the chamber 10 while the method MT is being performed.
  • a process gas and an inert gas are supplied into the chamber 10 from a gas supply 26 and a gas supply 28, respectively.
  • the raw material gas may be continuously supplied into the chamber 10 while the method MT is being performed. That is, the processing gas and the source gas may be simultaneously supplied into the chamber 10 while the electromagnetic wave from the power supply 40 is being introduced into the chamber 10 .
  • the raw material gas is supplied during the period when the electromagnetic wave from the power supply 40 is not introduced into the chamber 10, and during the period when the electromagnetic wave from the power supply 40 is introduced into the chamber 10. may be stopped.
  • a conductive film can be formed on the substrate W by the method MT when the negative voltage applied to the upper electrode 20 is generated from the high frequency voltage LF.
  • a silicon - containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) can be used as the source gas, and a reducing gas such as H2 gas can be used as the process gas.
  • a metal - containing gas such as a metal halide gas (eg, TiCl4 gas) can be used as the source gas, and a reducing gas such as H2 gas can be used as the process gas.
  • the film is formed on the substrate W by a plasma-enhanced chemical vapor deposition (CVD) method.
  • CVD chemical vapor deposition
  • ALD plasma-assisted atomic layer deposition
  • electromagnetic waves are introduced into chamber 10 only during the period in which the negative voltage is applied to upper electrode 20 .
  • the thickness of the sheath directly below the upper electrode 20 increases.
  • the wavelength of the electromagnetic wave along the lower surface of the upper electrode 20 becomes longer and approaches the wavelength of the electromagnetic wave under vacuum. Since the electromagnetic wave from the power supply 40 is introduced into the chamber 10 when its wavelength is lengthened along the lower surface of the upper electrode 20, the plasma density distribution in the chamber 10 is made uniform.
  • a negative voltage is applied to the upper electrode 20 . That is, since the application of positive voltage to the upper electrode 20 is suppressed, the increase in plasma potential is suppressed. By suppressing the rise in the plasma potential, damage to the substrate W and the chamber 10 by ions is reduced, and a process using high-density plasma becomes possible.
  • FIG. 6 is a schematic diagram of a plasma processing apparatus according to another exemplary embodiment. 7 and 8 will be referred to along with FIG. 6 in the following description.
  • FIGS. 7 and 8 are a timing chart of still another example related to the plasma processing method shown in FIG. 7 and 8, "DCV" represents the voltage generated by power supply 50B. 7 and 8, "ON” indicates that the corresponding gas is being supplied into the chamber 10, and “OFF” indicates that the supply of the corresponding gas into the chamber 10 is stopped. indicates that
  • a plasma processing apparatus 1B shown in FIG. Other configurations of the plasma processing apparatus 1B may be the same as corresponding configurations of the plasma processing apparatus 1B.
  • the power supply 50B is configured to periodically generate a negative DC voltage VN as the negative voltage applied to the upper electrode 20.
  • the frequency that defines the period CP at which the power supply 50B applies the negative DC voltage VN to the upper electrode 20 may be 400 kHz or more and 13.56 MHz or less.
  • the power supply 50B applies a negative DC voltage VN to the upper electrode 20 during the period PN within the cycle CP.
  • the power supply 40 introduces electromagnetic waves into the chamber 10 only during the period PN during which the negative DC voltage VN is applied to the upper electrode 20.
  • the power supply 50B may apply the positive DC voltage VP to the upper electrode 20 during periods other than the period PN .
  • the absolute value of the negative DC voltage VN applied to the upper electrode 20 by the power supply 50B may be greater than the absolute value of the positive DC voltage VP applied to the upper electrode 20 by the power supply 50B.
  • the absolute value of the negative DC voltage VN applied to the upper electrode 20 by the power supply 50B may be 200V or more.
  • the absolute value of the positive DC voltage VP applied to the upper electrode 20 by the power supply 50B may be 50V or less, for example, about 10V.
  • the length of time D N during which the negative DC voltage VN is applied to the upper electrode 20 and the length of time D P during which the positive DC voltage V P is applied to the upper electrode 20 are (1) may be satisfied.
  • the charge amount QP accumulated in the upper electrode 20 while the positive DC voltage VP is being applied within each period CP is expressed by the following equation (2).
  • I e , e, n e , A, v e , and T e are, respectively, the plasma electron current, the elementary charge, the plasma electron density, the area of the lower surface of the upper electrode 20, the electron average velocity generated in the chamber, is the electron temperature in the plasma.
  • the charge amount QN accumulated in the upper electrode 20 while the negative DC voltage VN is being applied within each period CP is expressed by the following equation (3).
  • I i , u B , and n s are the plasma ion current, Bohm velocity, and electron density at the edge of the plasma sheath (boundary between plasma sheath and bulk plasma), respectively.
  • v e and u B are represented by the following formulas (4) and (5). where M is the ion mass.
  • Equation (1) is derived from this equation (6).
  • step STa a negative DC voltage VN is periodically applied to the upper electrode 20 .
  • a positive DC voltage VP may be applied to the upper electrode 20 during periods when the negative DC voltage VN is not applied to the upper electrode 20 .
  • step STb electromagnetic waves from the power supply 40 are introduced into the chamber 10 to generate plasma from the processing gas.
  • An electromagnetic wave is introduced into chamber 10 to form a standing wave along the lower surface of upper electrode 20 .
  • Electromagnetic waves are introduced into the chamber 10 only during the period PN during which the negative DC voltage VN from the power supply 50B is applied to the upper electrode 20 .
  • the processing gas is supplied from the gas supply unit 26 into the chamber 10 at least during the period when the step STb is performed.
  • the process gas can be any gas that processes the substrate W.
  • the process gas and inert gas may be continuously supplied into the chamber 10 while the method MT is being performed.
  • a process gas and an inert gas are supplied into the chamber 10 from a gas supply 26 and a gas supply 28, respectively.
  • the raw material gas may be continuously supplied into the chamber 10 while the method MT is being performed. That is, the processing gas and the source gas may be simultaneously supplied into the chamber 10 while the electromagnetic wave from the power supply 40 is being introduced into the chamber 10 .
  • the raw material gas is supplied during the period when the electromagnetic wave from the power supply 40 is not introduced into the chamber 10, and during the period when the electromagnetic wave from the power supply 40 is introduced into the chamber 10. may be stopped.
  • a conductive film or insulating film may be formed on the substrate W by the method MT.
  • a silicon - containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) can be used as the source gas, and a processing gas such as H2 gas can be used as the processing gas.
  • a reducing gas can be used.
  • a metal - containing gas such as a metal halide gas (e.g., TiCl4 gas) can be used as the raw material gas, and H2 gas can be used as the processing gas.
  • a metal - containing gas such as a metal halide gas (e.g., TiCl4 gas) can be used as the raw material gas, and H2 gas can be used as the processing gas.
  • a metal - containing gas such as a metal halide gas (e.g., TiCl4 gas) can be used as the raw material gas, and H2 gas can be used as the processing gas.
  • a silicon-containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) can be used as the source gas, and a processing gas such as N2 gas or NH3 gas can be used. Any reducing gas can be used.
  • a silicon-containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas)
  • a processing gas such as N2 gas or NH3 gas
  • Any reducing gas can be used.
  • Plasma processing apparatus 10... Chamber, 18... Substrate support, 20... Upper electrode, 40... Power supply, 50... Power supply.

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Abstract

The disclosed plasma processing method includes a step (a) for periodically applying a negative voltage to an upper electrode of a plasma processing device. This plasma processing method further includes a step (b) for introducing electromagnetic waves into a chamber of the plasma processing device in order to generate plasma inside the chamber from a processing gas. The electromagnetic waves are VHF waves or UHF waves. The electromagnetic waves are introduced into the chamber so as to form a standing wave inside the chamber along a lower surface of the upper electrode. The electromagnetic waves are introduced into the chamber only during the period in which the negative voltage is being applied to the upper electrode.

Description

プラズマ処理方法及びプラズマ処理装置Plasma processing method and plasma processing apparatus
　本開示の例示的実施形態は、プラズマ処理方法及びプラズマ処理装置に関するものである。 An exemplary embodiment of the present disclosure relates to a plasma processing method and a plasma processing apparatus.
　プラズマ処理装置が基板に対するプラズマ処理で用いられている。下記の特許文献１は、プラズマ処理装置の一種としてＶＨＦ波を用いるプラズマ処理装置を開示している。ＶＨＦ波は、チャンバ内でガスからプラズマを生成するために、高周波電極に供給される。 Plasma processing equipment is used for plasma processing of substrates. Patent Document 1 below discloses a plasma processing apparatus using VHF waves as a type of plasma processing apparatus. VHF waves are applied to a radio frequency electrode to generate a plasma from the gas within the chamber.
特開２００１－２７４０９９号公報JP-A-2001-274099
　本開示は、チャンバ内でのプラズマの密度の分布を均一化する技術を提供する。 The present disclosure provides a technique for uniforming the plasma density distribution within the chamber.
　一つの例示的実施形態において、プラズマ処理方法が提供される。プラズマ処理方法は、プラズマ処理装置の上部電極に負の電圧を周期的に印加する工程（ａ）を含む。プラズマ処理方法は、プラズマ処理装置のチャンバ内で処理ガスからプラズマを生成するためにチャンバ内に電磁波を導入する工程（ｂ）を更に含む。電磁波は、ＶＨＦ波又はＵＨＦ波である。電磁波は、上部電極の下面に沿ってチャンバ内で定在波を形成するようにチャンバ内に導入される。電磁波は、負の電圧が上部電極に印加されている期間内でのみチャンバ内に導入される。 In one exemplary embodiment, a plasma processing method is provided. The plasma processing method includes step (a) of periodically applying a negative voltage to an upper electrode of a plasma processing apparatus. The plasma processing method further includes step (b) of introducing an electromagnetic wave into the chamber of the plasma processing apparatus to generate plasma from the process gas within the chamber. The electromagnetic waves are VHF waves or UHF waves. An electromagnetic wave is introduced into the chamber so as to form a standing wave within the chamber along the lower surface of the upper electrode. Electromagnetic waves are introduced into the chamber only during the period in which the negative voltage is applied to the upper electrode.
　一つの例示的実施形態によれば、チャンバ内でのプラズマの密度の分布を均一化することが可能となる。 According to one exemplary embodiment, it is possible to homogenize the plasma density distribution within the chamber.
一つの例示的実施形態に係るプラズマ処理方法の流れ図である。1 is a flow diagram of a plasma processing method according to one exemplary embodiment; 一つの例示的実施形態に係るプラズマ処理装置を概略的に示す図である。1 schematically illustrates a plasma processing apparatus according to one exemplary embodiment; FIG. 図２のＩＩＩ－ＩＩＩ線に沿ってとった断面図である。3 is a cross-sectional view taken along line III-III of FIG. 2; FIG. 図１に示すプラズマ処理方法に関連する一例のタイミングチャートである。2 is an example timing chart related to the plasma processing method shown in FIG. 1; 図１に示すプラズマ処理方法に関連する別の例のタイミングチャートである。FIG. 2 is a timing chart of another example related to the plasma processing method shown in FIG. 1; FIG. 別の例示的実施形態に係るプラズマ処理装置を概略的に示す図である。FIG. 2 schematically illustrates a plasma processing apparatus according to another exemplary embodiment; 図１に示すプラズマ処理方法に関連する更に別の例のタイミングチャートである。FIG. 2 is a timing chart of still another example related to the plasma processing method shown in FIG. 1; FIG. 図１に示すプラズマ処理方法に関連する更に別の例のタイミングチャートである。FIG. 2 is a timing chart of still another example related to the plasma processing method shown in FIG. 1; FIG.
　以下、種々の例示的実施形態について説明する。 Various exemplary embodiments are described below.
　一つの例示的実施形態において、プラズマ処理方法が提供される。プラズマ処理方法は、プラズマ処理装置の上部電極に負の電圧を周期的に印加する工程（ａ）を含む。プラズマ処理方法は、プラズマ処理装置のチャンバ内で処理ガスからプラズマを生成するためにチャンバ内に電磁波を導入する工程（ｂ）を更に含む。電磁波は、ＶＨＦ波又はＵＨＦ波である。電磁波は、上部電極の下面に沿ってチャンバ内で定在波を形成するようにチャンバ内に導入される。電磁波は、負の電圧が上部電極に印加されている期間内でのみチャンバ内に導入される。 In one exemplary embodiment, a plasma processing method is provided. The plasma processing method includes step (a) of periodically applying a negative voltage to an upper electrode of a plasma processing apparatus. The plasma processing method further includes step (b) of introducing an electromagnetic wave into the chamber of the plasma processing apparatus to generate plasma from the process gas within the chamber. The electromagnetic waves are VHF waves or UHF waves. An electromagnetic wave is introduced into the chamber so as to form a standing wave within the chamber along the lower surface of the upper electrode. Electromagnetic waves are introduced into the chamber only during the period in which the negative voltage is applied to the upper electrode.
　負の電圧が上部電極に印加されている期間においては、上部電極の直下におけるシースの厚さが大きくなる。上部電極の直下におけるシースの厚さが大きい場合には、上部電極の下面に沿った電磁波の波長が長くなる。上記実施形態では、上部電極の直下におけるシースの厚さが大きいときに電磁波がチャンバ内に導入されるので、上部電極の下面に沿った電磁波の波長が長くなり、チャンバ内でのプラズマの密度の分布が均一化される。 During the period in which the negative voltage is applied to the upper electrode, the thickness of the sheath directly below the upper electrode increases. If the thickness of the sheath directly below the upper electrode is large, the wavelength of the electromagnetic wave along the lower surface of the upper electrode will be longer. In the above embodiment, the electromagnetic wave is introduced into the chamber when the thickness of the sheath directly under the upper electrode is large, so the wavelength of the electromagnetic wave along the lower surface of the upper electrode becomes longer, and the plasma density in the chamber increases. The distribution is homogenized.
　一つの例示的実施形態において、負の電圧は、高周波電圧に含まれる正の電圧を抑制するように、該高周波電圧の波形を整形することにより、生成されてもよい。 In one exemplary embodiment, the negative voltage may be generated by shaping the waveform of the high frequency voltage to suppress the positive voltage contained in the high frequency voltage.
　一つの例示的実施形態において、電磁波は、負の電圧が該負の電圧の最大の絶対値の半値以上の絶対値を有する各期間において、チャンバ内に導入されてもよい。 In one exemplary embodiment, the electromagnetic wave may be introduced into the chamber during each period during which the negative voltage has an absolute value equal to or greater than half the maximum absolute value of the negative voltage.
　電磁波のチャンバ内への導入は、負の電圧が上部電極に印加される各期間内で、時点ｔ１から開始され、時点ｔ２で終了される。時点ｔ１及びｔ２は、ｔ０＜ｔ１＜ｔ２＜ｔ３を満たし、且つ、ｔ１－ｔ０＞（１／６）（ｔ３－ｔ０）及びｔ３－ｔ２＞（１／６）（ｔ３－ｔ０）を満たしていてもよい。ここで、ｔ０、ｔ３はそれぞれ、負の電圧が上部電極に印加される各期間の開始時点、終了時点である。 The introduction of electromagnetic waves into the chamber begins at time t1 and ends at time t2 within each period in which a negative voltage is applied to the upper electrode. Time points t1 and t2 satisfy t0<t1<t2<t3 and satisfy t1-t0>(1/6)(t3-t0) and t3-t2>(1/6)(t3-t0) may Here, t0 and t3 are the start and end times of each period in which the negative voltage is applied to the upper electrode, respectively.
　一つの例示的実施形態において、負の電圧は、上部電極に周期的に印加される負の直流電圧であってもよい。 In one exemplary embodiment, the negative voltage may be a negative DC voltage applied periodically to the upper electrode.
　一つの例示的実施形態において、負の電圧が上部電極に印加されていない期間において、正の直流電圧が上部電極に印加されてもよい。 In one exemplary embodiment, a positive DC voltage may be applied to the top electrode during periods when the negative voltage is not applied to the top electrode.
　一つの例示的実施形態において、負の直流電圧の絶対値は、正の直流電圧の絶対値よりも大きくてもよい。 In one exemplary embodiment, the absolute value of the negative DC voltage may be greater than the absolute value of the positive DC voltage.
　一つの例示的実施形態において、負の直流電圧が印加される期間の時間長ＤＮと正の直流電圧が印加される期間の時間長ＤＰは、下記の式（１）を満たしていてもよい。
Figure JPOXMLDOC01-appb-M000002
 を満たしていてもよい。ここで、ＶＰは上部電極に印加される正の直流電圧のレベルであり、Ｔｅはチャンバ内で生成されるプラズマにおける電子温度である。 In one exemplary embodiment, the length of time DN during which the negative DC voltage is applied and the length of time DP during which the positive DC voltage is applied satisfy the following formula (1): good.
Figure JPOXMLDOC01-appb-M000002
 may be satisfied. where VP is the level of the positive DC voltage applied to the top electrode and T e is the electron temperature in the plasma generated in the chamber.
　一つの例示的実施形態において、プラズマ処理方法は、チャンバ内に原料ガスを供給する工程を更に含んでいてもよい。処理ガスは、チャンバ内で基板上に原料ガスから付着した原料を還元させる還元ガスであってもよい。 In one exemplary embodiment, the plasma processing method may further include supplying source gas into the chamber. The process gas may be a reducing gas that reduces the source material deposited on the substrate from the source gas in the chamber.
　一つの例示的実施形態において、原料ガスと処理ガスは、電磁波がチャンバ内に導入されている期間において、チャンバ内に同時に供給されてもよい。 In one exemplary embodiment, the source gas and process gas may be simultaneously supplied into the chamber during the period in which the electromagnetic waves are introduced into the chamber.
　一つの例示的実施形態において、原料ガスのチャンバ内への供給は、電磁波がチャンバ内に導入されてない期間において行われ、電磁波が前記チャンバ内に導入されている期間において停止されてもよい。 In one exemplary embodiment, the supply of the raw material gas into the chamber may be performed during the period when the electromagnetic wave is not introduced into the chamber, and stopped during the period when the electromagnetic wave is introduced into the chamber.
　別の例示的実施形態においては、プラズマ処理装置が提供される。プラズマ処理装置は、チャンバ、基板支持部、上部電極、第１の電源、及び第２の電源を備える。基板支持部は、チャンバ内に設けられている。上部電極は、基板支持部の上方に設けられている。第１の電源は、上部電極に負の電圧を周期的に印加するように構成されている。第２の電源は、チャンバ内で処理ガスからプラズマを生成するために電磁波を発生するように構成されている。電磁波は、ＶＨＦ波又はＵＨＦ波であり、上部電極の下面に沿ってチャンバ内で定在波を形成するようにチャンバ内に導入される。第２の電源は、負の電圧が上部電極に印加されている期間内でのみチャンバ内に電磁波を導入するように構成されている。 In another exemplary embodiment, a plasma processing apparatus is provided. A plasma processing apparatus includes a chamber, a substrate support, an upper electrode, a first power supply, and a second power supply. A substrate support is provided within the chamber. The upper electrode is provided above the substrate support. A first power supply is configured to periodically apply a negative voltage to the upper electrode. A second power supply is configured to generate electromagnetic waves to generate a plasma from the process gas within the chamber. The electromagnetic wave, which may be a VHF wave or a UHF wave, is introduced into the chamber to form a standing wave within the chamber along the lower surface of the upper electrode. The second power supply is configured to introduce electromagnetic waves into the chamber only during periods in which the negative voltage is applied to the upper electrode.
　一つの例示的実施形態において、プラズマ処理装置は、導入部を更に備える。導入部は、誘電体から形成されており、電磁波をそこからチャンバ内に導入するように上部電極の外周に沿って設けられていてもよい。上部電極は、処理ガスをチャンバ内に導入するシャワーヘッドを構成していてもよい。 In one exemplary embodiment, the plasma processing apparatus further comprises an introduction section. The lead-in portion may be formed from a dielectric material and may be provided along the outer periphery of the upper electrode so as to lead the electromagnetic wave therethrough into the chamber. The top electrode may form a showerhead that introduces process gases into the chamber.
　一つの例示的実施形態において、第１の電源は、高周波電圧を発生するように構成されていてもよい。プラズマ処理装置は、波形整形器を更に備えていてもよい。波形整形器は、高周波電圧に含まれる正の電圧を抑制するように高周波電圧の波形を整形するよう構成される。 In one exemplary embodiment, the first power supply may be configured to generate a high frequency voltage. The plasma processing apparatus may further comprise a waveform shaper. The waveform shaper is configured to shape the waveform of the high frequency voltage to suppress positive voltages contained in the high frequency voltage.
　一つの例示的実施形態において、第１の電源は、負の電圧として負の直流電圧を上部電極に周期的に印加するように構成されていてもよい。 In one exemplary embodiment, the first power supply may be configured to periodically apply a negative DC voltage to the upper electrode as the negative voltage.
　以下、図面を参照して種々の例示的実施形態について詳細に説明する。なお、各図面において同一又は相当の部分に対しては同一の符号を附すこととする。 Various exemplary embodiments are described in detail below with reference to the drawings. In addition, suppose that the same code|symbol is attached|subjected to the part which is the same or equivalent in each drawing.
　図１は、一つの例示的実施形態に係るプラズマ処理方法の流れ図である。図１に示すプラズマ処理方法（以下、「方法ＭＴ」という）は、プラズマ処理装置を用いて行われる。 FIG. 1 is a flow diagram of a plasma processing method according to one exemplary embodiment. The plasma processing method (hereinafter referred to as "method MT") shown in FIG. 1 is performed using a plasma processing apparatus.
　図２は、一つの例示的実施形態に係るプラズマ処理装置を概略的に示す図である。方法ＭＴは、図２に示すプラズマ処理装置１を用いて行われ得る。プラズマ処理装置１は、平行平板型のプラズマ処理装置である。プラズマ処理装置１は、電磁波によりプラズマを生成するように構成されている。電磁波は、ＶＨＦ波又はＵＨＦ波である。ＶＨＦ波の帯域は３０ＭＨｚ～３００ＭＨｚであり、ＵＨＦ波の帯域は３００ＭＨｚ～３ＧＨｚである。 FIG. 2 is a diagram schematically showing a plasma processing apparatus according to one exemplary embodiment. Method MT can be performed using the plasma processing apparatus 1 shown in FIG. The plasma processing apparatus 1 is a parallel plate type plasma processing apparatus. The plasma processing apparatus 1 is configured to generate plasma using electromagnetic waves. The electromagnetic waves are VHF waves or UHF waves. The band of VHF waves is 30 MHz to 300 MHz, and the band of UHF waves is 300 MHz to 3 GHz.
　プラズマ処理装置１は、チャンバ１０を備えている。チャンバ１０は、内部空間を画成している。基板Ｗはチャンバ１０の内部空間の中で処理される。チャンバ１０は、その中心軸線として軸線ＡＸを有している。軸線ＡＸは、鉛直方向に延びる軸線である。 The plasma processing apparatus 1 includes a chamber 10. Chamber 10 defines an interior space. A substrate W is processed within the interior space of the chamber 10 . The chamber 10 has an axis AX as its central axis. The axis AX is an axis extending in the vertical direction.
　一実施形態においては、チャンバ１０は、チャンバ本体１２を含んでいてもよい。チャンバ本体１２は、略円筒形状を有しており、その上部において開口されている。チャンバ本体１２は、チャンバ１０の側壁及び底部を提供している。チャンバ本体１２は、アルミニウムのような金属から形成されている。チャンバ本体１２は、接地されている。 In one embodiment, chamber 10 may include chamber body 12 . The chamber body 12 has a substantially cylindrical shape and is open at its upper portion. Chamber body 12 provides the sidewalls and bottom of chamber 10 . The chamber body 12 is made of metal such as aluminum. The chamber body 12 is grounded.
　チャンバ本体１２の側壁は、通路１２ｐを提供している。基板Ｗは、チャンバ１０の内部と外部との間で搬送されるときに、通路１２ｐを通過する。通路１２ｐは、ゲートバルブ１２ｖによって開閉可能である。ゲートバルブ１２ｖは、チャンバ本体１２の側壁に沿って設けられている。 A side wall of the chamber body 12 provides a passage 12p. The substrate W passes through the passageway 12p when being transported between the inside and outside of the chamber 10. As shown in FIG. The passage 12p can be opened and closed by a gate valve 12v. A gate valve 12 v is provided along the side wall of the chamber body 12 .
　チャンバ１０は、上壁１４を更に含んでいてもよい。上壁１４は、アルミニウムのような金属から形成されている。上壁１４は、後述するカバー導体と共にチャンバ本体１２の上部の開口を閉じている。上壁１４は、チャンバ本体１２と共に接地されている。 The chamber 10 may further include a top wall 14 . Top wall 14 is formed from a metal such as aluminum. The upper wall 14 closes the upper opening of the chamber main body 12 together with a cover conductor which will be described later. The upper wall 14 is grounded together with the chamber body 12 .
　チャンバ１０の底部は、排気口を提供している。排気口は、排気装置１６に接続されている。排気装置１６は、自動圧力制御弁のような圧力制御器及びターボ分子ポンプのような真空ポンプを含んでいる。 The bottom of chamber 10 provides an exhaust port. The exhaust port is connected to an exhaust device 16 . Exhaust system 16 includes a pressure controller, such as an automatic pressure control valve, and a vacuum pump, such as a turbomolecular pump.
　プラズマ処理装置１は、基板支持部１８を更に備える。基板支持部１８は、チャンバ１０内に設けられている。基板支持部１８は、その上に載置される基板Ｗを支持するように構成されている。基板Ｗは、略水平な状態で基板支持部１８上に載置される。基板支持部１８は、支持部材１９によって支持されていてもよい。支持部材１９は、チャンバ１０の底部から上方に延びている。基板支持部１８及び支持部材１９は、窒化アルミニウム等の誘電体から形成され得る。 The plasma processing apparatus 1 further includes a substrate support section 18 . A substrate support 18 is provided within the chamber 10 . The substrate support 18 is configured to support the substrate W placed thereon. The substrate W is placed on the substrate support 18 in a substantially horizontal state. The substrate support section 18 may be supported by a support member 19 . Support member 19 extends upwardly from the bottom of chamber 10 . Substrate support 18 and support member 19 may be formed from a dielectric such as aluminum nitride.
　プラズマ処理装置１は、上部電極２０を更に備える。上部電極２０は、アルミニウムのような金属から形成されている。上部電極２０は、基板支持部１８の上方に設けられている。上部電極２０は、チャンバ１０の内部空間を画成する天部を構成している。上部電極２０は、略円盤形状を有し得る。上部電極２０は、その中心軸線として軸線ＡＸを有している。 The plasma processing apparatus 1 further includes an upper electrode 20 . The upper electrode 20 is made of metal such as aluminum. The upper electrode 20 is provided above the substrate support portion 18 . The upper electrode 20 constitutes a ceiling that defines the internal space of the chamber 10 . The upper electrode 20 may have a substantially disk shape. The upper electrode 20 has an axis AX as its central axis.
　一実施形態において、上部電極２０は、シャワーヘッドを構成している。上部電極２０は、中空構造を有し得る。上部電極２０は、複数のガス孔２０ｈを提供している。複数のガス孔２０ｈは、チャンバ１０の内部空間に向けて開口している。上部電極２０は、その中にガス拡散室２０ｃを更に提供している。複数のガス孔２０ｈは、ガス拡散室２０ｃに接続しており、ガス拡散室２０ｃから下方に延びている。 In one embodiment, the upper electrode 20 constitutes a showerhead. The upper electrode 20 can have a hollow structure. The upper electrode 20 provides a plurality of gas holes 20h. A plurality of gas holes 20 h are open toward the internal space of the chamber 10 . Top electrode 20 further provides a gas diffusion chamber 20c therein. A plurality of gas holes 20h are connected to the gas diffusion chamber 20c and extend downward from the gas diffusion chamber 20c.
　プラズマ処理装置１は、ガス供給管２２を更に備えていてもよい。ガス供給管２２は、円筒形状の管である。ガス供給管２２は、アルミニウムのような金属から形成されている。ガス供給管２２は、上部電極２０の上方において、鉛直方向に延在している。ガス供給管２２は、その中心軸線として軸線ＡＸを有している。ガス供給管２２の下端は、上部電極２０の上部中央に接続している。上部電極２０の上部中央は、ガスの入口を提供している。入口は、ガス拡散室２０ｃに接続している。ガス供給管２２は、ガスを上部電極２０に供給する。ガス供給管２２からのガスは、上部電極２０の入口及びガス拡散室２０ｃを介して、複数のガス孔２０ｈからチャンバ１０内に導入される。 The plasma processing apparatus 1 may further include a gas supply pipe 22. The gas supply pipe 22 is a cylindrical pipe. The gas supply pipe 22 is made of metal such as aluminum. The gas supply pipe 22 extends vertically above the upper electrode 20 . The gas supply pipe 22 has an axis AX as its central axis. The lower end of the gas supply pipe 22 is connected to the upper center of the upper electrode 20 . The top center of the top electrode 20 provides the gas inlet. The inlet is connected to the gas diffusion chamber 20c. A gas supply pipe 22 supplies gas to the upper electrode 20 . Gas from the gas supply pipe 22 is introduced into the chamber 10 through the inlet of the upper electrode 20 and the gas diffusion chamber 20c through the plurality of gas holes 20h.
　一実施形態において、プラズマ処理装置１は、ガス供給部２４、ガス供給部２６、及びガス供給部２８を更に備えていてもよい。ガス供給部２４は、ガス供給管２２に接続されている。ガス供給部２４は、ガスソース２４ｓ、一次バルブ２４ｖ１、流量制御器２４ｃ、及び二次バルブ２４ｖ２を含んでいる。ガスソース２４ｓは、原料ガスのソースである。原料ガスは、シランガス（例えば、ＳｉＨ４ガス又はトリメチルシランガス）のようなシリコン含有ガス又はハロゲン化金属ガス（例えば、ＴｉＣｌ４ガス）のような金属含有ガスであり得る。ガスソース２４ｓは、一次バルブ２４ｖ１、流量制御器２４ｃ、及び二次バルブ２４ｖ２を介してガス供給管２２に接続されている。 In one embodiment, the plasma processing apparatus 1 may further include a gas supply section 24 , a gas supply section 26 and a gas supply section 28 . The gas supply section 24 is connected to the gas supply pipe 22 . The gas supply section 24 includes a gas source 24s, a primary valve 24v1, a flow controller 24c, and a secondary valve 24v2. The gas source 24s is a source of raw material gas. The source gas can be a silicon-containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) or a metal-containing gas such as a metal halide gas (eg, TiCl4 gas). The gas source 24s is connected to the gas supply pipe 22 via a primary valve 24v1, a flow controller 24c, and a secondary valve 24v2.
　ガス供給部２６は、ガス供給管２２に接続されている。ガス供給部２６は、ガスソース２６ｓ、一次バルブ２６ｖ１、流量制御器２６ｃ、及び二次バルブ２６ｖ２を含んでいる。ガスソース２６ｓは、処理ガスのソースである。処理ガスは、それから生成されるプラズマからの化学種を用いて基板Ｗを処理するために選択された如何なるガスであってもよい。一実施形態では、処理ガスは、基板Ｗ上に原料ガスから付着した原料を還元させる還元ガスであってもよい。処理ガスは、ＮＨ３ガス、Ｎ２ガス、Ｈ２ガスのような還元ガスであってもよい。ガスソース２６ｓは、一次バルブ２６ｖ１、流量制御器２６ｃ、及び二次バルブ２６ｖ２を介してガス供給管２２に接続されている。 The gas supply section 26 is connected to the gas supply pipe 22 . The gas supply section 26 includes a gas source 26s, a primary valve 26v1, a flow controller 26c, and a secondary valve 26v2. Gas source 26s is a source of process gas. The process gas may be any gas selected to process the substrate W with species from the plasma generated therefrom. In one embodiment, the process gas may be a reducing gas that reduces the source material deposited on the substrate W from the source gas. The process gas may be a reducing gas such as NH3 gas, N2 gas, H2 gas. The gas source 26s is connected to the gas supply pipe 22 via a primary valve 26v1, a flow controller 26c, and a secondary valve 26v2.
　ガス供給部２８は、ガス供給管２２に接続されている。ガス供給部２８は、ガスソース２８ｓ、一次バルブ２８ｖ１、流量制御器２８ｃ、及び二次バルブ２８ｖ２を含んでいる。ガスソース２８ｓは、不活性ガスのソースである。不活性ガスは、Ａｒガスのような希ガスであり得る。ガスソース２８ｓは、一次バルブ２８ｖ１、流量制御器２８ｃ、及び二次バルブ２８ｖ２を介してガス供給管２２に接続されている。 The gas supply unit 28 is connected to the gas supply pipe 22 . The gas supply section 28 includes a gas source 28s, a primary valve 28v1, a flow controller 28c, and a secondary valve 28v2. Gas source 28s is a source of inert gas. The inert gas can be a noble gas such as Ar gas. The gas source 28s is connected to the gas supply pipe 22 via a primary valve 28v1, a flow controller 28c, and a secondary valve 28v2.
　一実施形態において、上部電極２０は、上壁１４の下方に設けられていてもよい。この実施形態において、上部電極２０と上壁１４との間の空間は、導波路３０の一部を構成している。導波路３０は、ガス供給管２２が、ガス供給管２２と上壁１４との間に提供している空間も含む。 In one embodiment, the upper electrode 20 may be provided below the upper wall 14 . In this embodiment, the space between top electrode 20 and top wall 14 forms part of waveguide 30 . Waveguide 30 also includes a space provided by gas supply tube 22 between gas supply tube 22 and top wall 14 .
　プラズマ処理装置１は、導入部３２を更に備えていてもよい。導入部３２は、酸化アルミニウムのような誘電体から形成されている。導入部３２は、そこからチャンバ１０内に電磁波を導入するように上部電極２０の外周に沿って設けられている。導入部３２は、環形状を有する。導入部３２は、上部電極２０とチャンバ本体１２との間の間隙を閉じており、導波路３０に繋がっている。 The plasma processing apparatus 1 may further include an introduction section 32 . Lead-in 32 is formed from a dielectric such as aluminum oxide. The introduction part 32 is provided along the outer circumference of the upper electrode 20 so as to introduce electromagnetic waves into the chamber 10 from there. The introduction part 32 has an annular shape. The introduction part 32 closes the gap between the upper electrode 20 and the chamber body 12 and is connected to the waveguide 30 .
　以下、図２と共に、図３を参照する。図３は、図２のＩＩＩ－ＩＩＩ線に沿ってとった断面図である。上述したガス供給管２２は、その長手方向の一部において、環状の鍔部２２ｆを含んでいてもよい。鍔部２２ｆは、ガス供給管２２の他の部分２２ａから径方向に突き出している。 Below, FIG. 3 will be referred to along with FIG. FIG. 3 is a cross-sectional view taken along line III--III of FIG. The gas supply pipe 22 described above may include an annular flange 22f in a part of its longitudinal direction. The collar portion 22f radially protrudes from the other portion 22a of the gas supply pipe 22. As shown in FIG.
　プラズマ処理装置１は、電磁波の供給路３６を更に備えていてもよい。供給路３６は、導体３６ｃを含んでいる。供給路３６の導体３６ｃは、ガス供給管２２に接続されている。具体的に、導体３６ｃの一端は、鍔部２２ｆに接続されている。 The plasma processing apparatus 1 may further include an electromagnetic wave supply path 36 . The supply line 36 includes a conductor 36c. A conductor 36 c of the supply path 36 is connected to the gas supply pipe 22 . Specifically, one end of the conductor 36c is connected to the collar portion 22f.
　プラズマ処理装置１は、電源４０（第２の電源）を更に備えている。導体３６ｃの他端は、整合器４０ｍを介して、電源４０に接続されていてもよい。電源４０は、電磁波の発生器である。整合器４０ｍは、インピーダンス整合回路を有する。インピーダンス整合回路は、電源４０の負荷のインピーダンスを、電源４０の出力インピーダンスに整合させるように構成される。インピーダンス整合回路は、可変インピーダンスを有する。インピーダンス整合回路は、例えばπ型の回路であり得る。 The plasma processing apparatus 1 further includes a power supply 40 (second power supply). The other end of the conductor 36c may be connected to the power supply 40 via the matching device 40m. The power supply 40 is a generator of electromagnetic waves. The matching box 40m has an impedance matching circuit. The impedance matching circuit is configured to match the impedance of the load of power supply 40 to the output impedance of power supply 40 . The impedance matching circuit has a variable impedance. The impedance matching circuit can be, for example, a π-type circuit.
　電源４０からの電磁波は、上部電極２０の下面に沿ってチャンバ１０内で定在波を形成するようにチャンバ１０内に導入される。プラズマ処理装置１では、電源４０からの電磁波は、整合器４０ｍ、供給路３６（導体３６ｃ）、ガス供給管２２、及び上部電極２０の周りの導波路３０を介して、導入部３２からチャンバ１０内に導入される。この電磁波は、ガス供給部２６からの処理ガスをチャンバ１０内で励起させて、プラズマを生成させる。 An electromagnetic wave from the power supply 40 is introduced into the chamber 10 so as to form a standing wave inside the chamber 10 along the lower surface of the upper electrode 20 . In the plasma processing apparatus 1, the electromagnetic wave from the power source 40 passes through the matching device 40m, the supply path 36 (conductor 36c), the gas supply pipe 22, and the waveguide 30 around the upper electrode 20, from the introduction part 32 to the chamber 10. introduced within. The electromagnetic waves excite the process gas from gas supply 26 in chamber 10 to generate plasma.
　一実施形態において、プラズマ処理装置１は、カバー導体４４及び誘電体部４６を更に備えていてもよい。カバー導体４４は、略円筒形状を有している。カバー導体４４は、チャンバ１０の上方で、ガス供給管２２を囲んでいる。カバー導体４４は、その上端４４ｔにおいてガス供給管２２に接続されている。即ち、カバー導体４４の上端４４ｔは、カバー導体４４とガス供給管２２との間の空間を閉じている。カバー導体４４の下端は、チャンバ１０に接続されている。一実施形態では、カバー導体４４の下端は、上壁１４に接続されていてもよい。カバー導体４４は、導体３６ｃを囲んでいてもよい。カバー導体４４と導体３６ｃとの間の空間は、誘電体で埋められていてもよい。この誘電体は、誘電体部４６と一体化されていてもよい。 In one embodiment, the plasma processing apparatus 1 may further include a cover conductor 44 and a dielectric portion 46. The cover conductor 44 has a substantially cylindrical shape. A cover conductor 44 surrounds the gas supply tube 22 above the chamber 10 . The cover conductor 44 is connected to the gas supply pipe 22 at its upper end 44t. That is, the upper end 44 t of the cover conductor 44 closes the space between the cover conductor 44 and the gas supply pipe 22 . A lower end of the cover conductor 44 is connected to the chamber 10 . In one embodiment, the lower end of cover conductor 44 may be connected to top wall 14 . A cover conductor 44 may surround the conductor 36c. A space between the cover conductor 44 and the conductor 36c may be filled with a dielectric. This dielectric may be integrated with the dielectric portion 46 .
　誘電体部４６は、誘電体から形成されている。誘電体部４６は、例えばポリテトラフルオロエチレン（ＰＴＦＥ）から形成されている。誘電体部４６は、ガス供給管２２の長手方向における一部分とカバー導体４４との間に設けられている。誘電体部４６は、ガス供給管２２の長手方向における一部分からカバー導体４４の内面まで径方向に沿って延在し、ガス供給管２２の長手方向における当該一部分を囲むように周方向に沿って延在していてもよい。一実施形態において、誘電体部４６は、鍔部２２ｆの下面２２ｂから上方に設けられていてもよい。即ち、誘電体部４６の下端の鉛直方向における位置は、鍔部２２ｆの下面２２ｂの鉛直方向における位置と同一であってもよい。一実施形態においては、図２に示すように、ガス供給管２２とカバー導体４４との間の空間のうち鍔部２２ｆの下面２２ｂとカバー導体４４の上端４４ｔとの間の領域が、誘電体部４６で埋められていてもよい。 The dielectric portion 46 is made of a dielectric. The dielectric portion 46 is made of, for example, polytetrafluoroethylene (PTFE). The dielectric portion 46 is provided between a portion of the gas supply pipe 22 in the longitudinal direction and the cover conductor 44 . The dielectric portion 46 radially extends from a portion of the gas supply pipe 22 in the longitudinal direction to the inner surface of the cover conductor 44 and extends circumferentially so as to surround the portion of the gas supply pipe 22 in the longitudinal direction. May be extended. In one embodiment, the dielectric portion 46 may be provided upward from the lower surface 22b of the collar portion 22f. That is, the vertical position of the lower end of the dielectric portion 46 may be the same as the vertical position of the lower surface 22b of the collar portion 22f. In one embodiment, as shown in FIG. 2, a region between the lower surface 22b of the collar portion 22f and the upper end 44t of the cover conductor 44 in the space between the gas supply pipe 22 and the cover conductor 44 is a dielectric material. The portion 46 may be filled.
　プラズマ処理装置１は、電源５０（第１の電源）を更に備えている。電源５０は、上部電極２０に負の電圧を周期的に印加するように構成されている。以下、図２と共に、図４及び図５を参照する。図４は、図１に示すプラズマ処理方法に関連する一例のタイミングチャートである。図５は、図１に示すプラズマ処理方法に関連する別の例のタイミングチャートである。図４及び図５において、「ＬＦ」は、電源５０によって発生される高周波電圧を表している。高周波電圧ＬＦを表す実線は負の電圧を表しており、高周波電圧ＬＦを表す破線は正の電圧を表している。また、図４及び図５において、「ＯＮ」は、対応のガスがチャンバ１０内に供給されていることを示しており、「ＯＦＦ」は、対応のガスのチャンバ１０内への供給が停止されていることを示している。 The plasma processing apparatus 1 further includes a power supply 50 (first power supply). Power supply 50 is configured to periodically apply a negative voltage to upper electrode 20 . 4 and 5 will be referred to together with FIG. 2 below. FIG. 4 is an example timing chart related to the plasma processing method shown in FIG. FIG. 5 is a timing chart of another example related to the plasma processing method shown in FIG. 4 and 5, "LF" represents the high frequency voltage generated by the power supply 50. FIG. A solid line representing the high-frequency voltage LF represents a negative voltage, and a broken line representing the high-frequency voltage LF represents a positive voltage. 4 and 5, "ON" indicates that the corresponding gas is being supplied into the chamber 10, and "OFF" indicates that the supply of the corresponding gas into the chamber 10 is stopped. indicates that
　一実施形態において、電源５０は、高周波電源であり、図４及び図５に示すように高周波電圧ＬＦを発生する。高周波電圧ＬＦの周波数は、４００ｋＨｚ以上、１３．５６ＭＨｚ以下であり得る。この実施形態において、電源５０は、整合器５０ｍを介して上部電極２０に接続されている。整合器５０ｍは、インピーダンス整合回路を有する。インピーダンス整合回路は、電源５０の負荷のインピーダンスを、電源５０の出力インピーダンスに整合させるように構成される。インピーダンス整合回路は、可変インピーダンスを有する。 In one embodiment, power supply 50 is a high frequency power supply and generates high frequency voltage LF as shown in FIGS. The frequency of the high frequency voltage LF may be 400 kHz or higher and 13.56 MHz or lower. In this embodiment, the power supply 50 is connected to the upper electrode 20 through a matching box 50m. The matching box 50m has an impedance matching circuit. The impedance matching circuit is configured to match the impedance of the load of power supply 50 to the output impedance of power supply 50 . The impedance matching circuit has a variable impedance.
　プラズマ処理装置１では、電源５０からの高周波電圧ＬＦのうち負の電圧が上部電極２０に印加される。これにより、負の電圧が、上部電極２０に周期的に印加される。図２に示すように、プラズマ処理装置１は、波形整形器５０ｓを更に備えていてもよい。波形整形器５０ｓは、高周波電圧ＬＦに含まれる正の電圧を抑制するように高周波電圧ＬＦの波形を整形するよう構成されている。この波形整形器５０ｓによる正の電圧の抑制の結果、電源５０からの高周波電圧ＬＦのうち負の電圧が上部電極２０に印加される。一実施形態において、波形整形器５０ｓは、ダイオードを含んでいてもよい。波形整形器５０ｓのダイオードのアノードは、電源５０（又は整合器５０ｍ）と上部電極２０との間の電気的パスに接続されている。波形整形器５０ｓのダイオードのカソードは、グランドに接続されている。 In the plasma processing apparatus 1 , the negative voltage of the high frequency voltage LF from the power supply 50 is applied to the upper electrode 20 . Thereby, a negative voltage is periodically applied to the upper electrode 20 . As shown in FIG. 2, the plasma processing apparatus 1 may further include a waveform shaper 50s. The waveform shaper 50s is configured to shape the waveform of the high frequency voltage LF so as to suppress the positive voltage contained in the high frequency voltage LF. As a result of suppressing the positive voltage by the waveform shaper 50 s, the negative voltage of the high frequency voltage LF from the power supply 50 is applied to the upper electrode 20 . In one embodiment, wave shaper 50s may include a diode. The anode of the diode of the waveform shaper 50 s is connected to the electrical path between the power supply 50 (or the matching device 50 m) and the upper electrode 20 . The cathode of the diode of the waveform shaper 50s is connected to the ground.
　上述した電源４０は、図４及び図５に示すように、高周波電圧ＬＦの周期ＣＰ内で負の電圧が上部電極２０に印加される期間ＰＮ内でのみ、電磁波をチャンバ１０内に導入するように構成されている。一実施形態において、電源４０は、期間ＰＮ内の期間ＰＡにおいてのみ、電磁波をチャンバ１０内に導入するように構成されていてもよい。期間ＰＡは、電源５０からの負の電圧が当該負の電圧の最大の絶対値の半値以上の絶対値を有する期間であってもよい。期間ＰＡは時点ｔ１で開始され、時点ｔ２で終了される。時点ｔ１及びｔ２は、ｔ０＜ｔ１＜ｔ２＜ｔ３を満たし、且つ、ｔ１－ｔ０＞（１／６）（ｔ３－ｔ０）及びｔ３－ｔ２＞（１／６）（ｔ３－ｔ０）を満たしていてもよい。ここで、ｔ０、ｔ３はそれぞれ、期間ＰＮの開始時点、終了時点である。 As shown in FIGS. 4 and 5, the power supply 40 described above introduces electromagnetic waves into the chamber 10 only during the period PN in which the negative voltage is applied to the upper electrode 20 within the period CP of the high frequency voltage LF. is configured as In one embodiment, power supply 40 may be configured to introduce electromagnetic waves into chamber 10 only during periods P A within periods P N . Period PA may be a period during which the negative voltage from power supply 50 has an absolute value equal to or greater than half the maximum absolute value of the negative voltage. Period PA starts at time t1 and ends at time t2. Time points t1 and t2 satisfy t0<t1<t2<t3 and satisfy t1-t0>(1/6)(t3-t0) and t3-t2>(1/6)(t3-t0) may Here, t0 and t3 are the start and end times of the period PN , respectively.
　一実施形態において、プラズマ処理装置１は、制御部６０を更に備えていてもよい。制御部６０は、プロセッサ、メモリといった記憶部、入力装置、表示装置、信号の入出力インターフェイス等を備えるコンピュータであり得る。制御部６０は、プラズマ処理装置１の各部を制御する。制御部６０の記憶部には、制御プログラム及びレシピデータが格納されている。制御プログラムは、プラズマ処理装置１で各種処理を実行するために、制御部６０のプロセッサによって実行される。制御部６０のプロセッサは、制御プログラムを実行し、レシピデータに従ってプラズマ処理装置１の各部を制御する。方法ＭＴは、制御部６０によるプラズマ処理装置１の各部の制御により、プラズマ処理装置１において行われ得る。 In one embodiment, the plasma processing apparatus 1 may further include a controller 60 . The control unit 60 may be a computer including a processor, a storage unit such as a memory, an input device, a display device, a signal input/output interface, and the like. The controller 60 controls each part of the plasma processing apparatus 1 . A storage unit of the control unit 60 stores a control program and recipe data. The control program is executed by the processor of the control unit 60 in order to perform various processes in the plasma processing apparatus 1. FIG. The processor of the controller 60 executes the control program and controls each part of the plasma processing apparatus 1 according to the recipe data. The method MT can be performed in the plasma processing apparatus 1 by controlling each section of the plasma processing apparatus 1 by the controller 60 .
　以下、再び図１を参照し、プラズマ処理装置１が用いられる場合を例にとって、方法ＭＴについて説明する。図１に示すように、方法ＭＴは、工程ＳＴａ及び工程ＳＴｂを含む。工程ＳＴａでは、負の電圧が上部電極２０に周期的に印加される。一実施形態では、負の電圧は、正の電圧を抑制するように電源５０からの高周波電圧ＬＦの波形を整形することにより生成されて、上部電極２０に印加される。 Hereinafter, referring to FIG. 1 again, the method MT will be described by taking the case where the plasma processing apparatus 1 is used as an example. As shown in FIG. 1, the method MT includes steps STa and STb. In step STa, a negative voltage is applied to the upper electrode 20 periodically. In one embodiment, the negative voltage is generated and applied to the top electrode 20 by shaping the waveform of the high frequency voltage LF from the power supply 50 to suppress the positive voltage.
　工程ＳＴｂでは、電源４０からの電磁波が、処理ガスからプラズマを生成するために、チャンバ１０内に導入される。電磁波は、上部電極２０の下面に沿って定在波を形成するようにチャンバ１０内に導入される。電磁波は、電源５０からの負の電圧が上部電極２０に印加されている期間ＰＮ内でのみチャンバ１０内に導入される。一実施形態では、電磁波は、上述の期間ＰＡ内でのみチャンバ１０内に導入される。 In step STb, electromagnetic waves from the power supply 40 are introduced into the chamber 10 to generate plasma from the processing gas. An electromagnetic wave is introduced into chamber 10 to form a standing wave along the lower surface of upper electrode 20 . Electromagnetic waves are introduced into the chamber 10 only during the period PN during which the negative voltage from the power supply 50 is applied to the upper electrode 20 . In one embodiment, the electromagnetic waves are introduced into the chamber 10 only during the period PA mentioned above.
　方法ＭＴでは、少なくとも工程ＳＴｂが行われる期間において、ガス供給部２６からの処理ガスがチャンバ１０内に供給される。即ち、処理ガスは、少なくとも電源４０からの電磁波がチャンバ１０内に導入されている期間において、チャンバ１０内に供給される。 In the method MT, the processing gas is supplied from the gas supply unit 26 into the chamber 10 at least during the period when the step STb is performed. That is, the processing gas is supplied into the chamber 10 at least while the electromagnetic wave from the power supply 40 is being introduced into the chamber 10 .
　図４及び図５に示すように、処理ガス及び不活性ガスが、方法ＭＴが行われている間、連続的にチャンバ１０内に供給されてもよい。処理ガス及び不活性ガスはそれぞれ、ガス供給部２６及びガス供給部２８からチャンバ１０内に供給される。 As shown in FIGS. 4 and 5, the process gas and inert gas may be continuously supplied into the chamber 10 while the method MT is being performed. A process gas and an inert gas are supplied into the chamber 10 from a gas supply 26 and a gas supply 28, respectively.
　また、図４に示すように、原料ガスが、方法ＭＴが行われている間、連続的にチャンバ１０内に供給されてもよい。即ち、処理ガス及び原料ガスは、電源４０からの電磁波がチャンバ１０内に導入されている期間において、チャンバ１０内に同時に供給されてもよい。 Further, as shown in FIG. 4, the raw material gas may be continuously supplied into the chamber 10 while the method MT is being performed. That is, the processing gas and the source gas may be simultaneously supplied into the chamber 10 while the electromagnetic wave from the power supply 40 is being introduced into the chamber 10 .
　或いは、図５に示すように、原料ガスの供給は、電源４０からの電磁波がチャンバ１０内に導入されてない期間において行われ、電源４０からの電磁波がチャンバ１０内に導入されている期間において停止されてもよい。 Alternatively, as shown in FIG. 5, the raw material gas is supplied during the period when the electromagnetic wave from the power supply 40 is not introduced into the chamber 10, and during the period when the electromagnetic wave from the power supply 40 is introduced into the chamber 10. may be stopped.
　上部電極２０に印加される負の電圧が高周波電圧ＬＦから生成される場合には、方法ＭＴによって、導電性を有する膜が基板Ｗ上に形成され得る。この場合には、原料ガスとして、シランガス（例えば、ＳｉＨ４ガス又はトリメチルシランガス）のようなシリコン含有ガスを用いることができ、処理ガスとして、Ｈ２ガスのような還元ガスを用いることができる。或いは、原料ガスとして、ハロゲン化金属ガス（例えば、ＴｉＣｌ４ガス）のような金属含有ガスを用いることができ、処理ガスとして、Ｈ２ガスのような還元ガスを用いることができる。方法ＭＴが図４に示すタイミングチャートに従って行われる場合には、膜は、プラズマ支援化学気相成長（ＣＶＤ）法により基板Ｗ上に形成される。方法ＭＴが図５に示すタイミングチャートに従って行われる場合には、膜は、プラズマ支援原子層堆積（ＡＬＤ）法により基板Ｗ上に形成される。 A conductive film can be formed on the substrate W by the method MT when the negative voltage applied to the upper electrode 20 is generated from the high frequency voltage LF. In this case, a silicon - containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) can be used as the source gas, and a reducing gas such as H2 gas can be used as the process gas. Alternatively, a metal - containing gas such as a metal halide gas (eg, TiCl4 gas) can be used as the source gas, and a reducing gas such as H2 gas can be used as the process gas. When the method MT is performed according to the timing chart shown in FIG. 4, the film is formed on the substrate W by a plasma-enhanced chemical vapor deposition (CVD) method. When the method MT is performed according to the timing chart shown in FIG. 5, the film is formed on the substrate W by a plasma-assisted atomic layer deposition (ALD) method.
　上述したように、電磁波は、負の電圧が上部電極２０に印加されている期間内でのみチャンバ１０内に導入される。負の電圧が上部電極２０に印加されている期間においては、上部電極２０の直下におけるシースの厚さが大きくなる。上部電極２０の直下におけるシースの厚さが大きい場合には、上部電極２０の下面に沿った電磁波の波長が長くなり、真空下での電磁波の波長に近付く。電源４０からの電磁波は、上部電極２０の下面に沿ったその波長が長くなる状態のときにチャンバ１０内に導入されるので、チャンバ１０内でのプラズマの密度の分布が均一化される。 As described above, electromagnetic waves are introduced into chamber 10 only during the period in which the negative voltage is applied to upper electrode 20 . During the period in which the negative voltage is applied to the upper electrode 20, the thickness of the sheath directly below the upper electrode 20 increases. When the thickness of the sheath directly below the upper electrode 20 is large, the wavelength of the electromagnetic wave along the lower surface of the upper electrode 20 becomes longer and approaches the wavelength of the electromagnetic wave under vacuum. Since the electromagnetic wave from the power supply 40 is introduced into the chamber 10 when its wavelength is lengthened along the lower surface of the upper electrode 20, the plasma density distribution in the chamber 10 is made uniform.
　また、電源５０からの高周波電圧ＬＦのうち正の電圧が抑制されることにより、負の電圧が上部電極２０に印加される。即ち、上部電極２０に対する正の電圧の印加が抑制されるので、プラズマ電位の上昇が抑制される。プラズマ電位の上昇が抑制されることにより、基板Ｗ及びチャンバ１０へのイオンによるダメージが軽減され、且つ、高密度のプラズマを用いたプロセスが可能になる。 Also, by suppressing the positive voltage of the high-frequency voltage LF from the power supply 50 , a negative voltage is applied to the upper electrode 20 . That is, since the application of positive voltage to the upper electrode 20 is suppressed, the increase in plasma potential is suppressed. By suppressing the rise in the plasma potential, damage to the substrate W and the chamber 10 by ions is reduced, and a process using high-density plasma becomes possible.
　以下、図６を参照して、別の例示的実施形態に係るプラズマ処理装置について説明する。図６は、別の例示的実施形態に係るプラズマ処理装置を概略的に示す図である。以下の説明では、図６と共に図７及び図８を参照する。図７及び図８の各々は、図１に示すプラズマ処理方法に関連する更に別の例のタイミングチャートである。図７及び図８において、「ＤＣＶ」は、電源５０Ｂによって発生される電圧を表している。また、図７及び図８において、「ＯＮ」は、対応のガスがチャンバ１０内に供給されていることを示しており、「ＯＦＦ」は、対応のガスのチャンバ１０内への供給が停止されていることを示している。 A plasma processing apparatus according to another exemplary embodiment will be described below with reference to FIG. FIG. 6 is a schematic diagram of a plasma processing apparatus according to another exemplary embodiment. 7 and 8 will be referred to along with FIG. 6 in the following description. Each of FIGS. 7 and 8 is a timing chart of still another example related to the plasma processing method shown in FIG. 7 and 8, "DCV" represents the voltage generated by power supply 50B. 7 and 8, "ON" indicates that the corresponding gas is being supplied into the chamber 10, and "OFF" indicates that the supply of the corresponding gas into the chamber 10 is stopped. indicates that
　図６に示すプラズマ処理装置１Ｂは、電源５０の代わりに電源５０Ｂを備えている。プラズマ処理装置１Ｂの他の構成は、プラズマ処理装置１の対応の構成と同一であり得る。電源５０Ｂは、上部電極２０に印加される負の電圧として負の直流電圧ＶＮを周期的に発生するように構成されている。電源５０Ｂが負の直流電圧ＶＮを上部電極２０に印加する周期ＣＰを規定する周波数は、４００ｋＨｚ以上、１３．５６ＭＨｚ以下であり得る。電源５０Ｂは、負の直流電圧ＶＮを周期ＣＰ内の期間ＰＮにおいて上部電極２０に印加する。なお、プラズマ処理装置１Ｂにおいても、電源４０は、負の直流電圧ＶＮが上部電極２０に印加されている期間ＰＮ内でのみ、電磁波をチャンバ１０内に導入する。 A plasma processing apparatus 1B shown in FIG. Other configurations of the plasma processing apparatus 1B may be the same as corresponding configurations of the plasma processing apparatus 1B. The power supply 50B is configured to periodically generate a negative DC voltage VN as the negative voltage applied to the upper electrode 20. FIG. The frequency that defines the period CP at which the power supply 50B applies the negative DC voltage VN to the upper electrode 20 may be 400 kHz or more and 13.56 MHz or less. The power supply 50B applies a negative DC voltage VN to the upper electrode 20 during the period PN within the cycle CP. Also in the plasma processing apparatus 1B, the power supply 40 introduces electromagnetic waves into the chamber 10 only during the period PN during which the negative DC voltage VN is applied to the upper electrode 20. FIG.
　一実施形態において、電源５０Ｂは、期間ＰＮ以外の期間において、正の直流電圧ＶＰを上部電極２０に印加してもよい。電源５０Ｂが上部電極２０に印加する負の直流電圧ＶＮの絶対値は、電源５０Ｂが上部電極２０に印加する正の直流電圧ＶＰの絶対値よりも大きくてもよい。例えば、電源５０Ｂが上部電極２０に印加する負の直流電圧ＶＮの絶対値は、２００Ｖ以上であってもよい。また、電源５０Ｂが上部電極２０に印加する正の直流電圧ＶＰの絶対値は、５０Ｖ以下、例えば約１０Ｖであってもよい。 In one embodiment, the power supply 50B may apply the positive DC voltage VP to the upper electrode 20 during periods other than the period PN . The absolute value of the negative DC voltage VN applied to the upper electrode 20 by the power supply 50B may be greater than the absolute value of the positive DC voltage VP applied to the upper electrode 20 by the power supply 50B. For example, the absolute value of the negative DC voltage VN applied to the upper electrode 20 by the power supply 50B may be 200V or more. Also, the absolute value of the positive DC voltage VP applied to the upper electrode 20 by the power supply 50B may be 50V or less, for example, about 10V.
　一実施形態においては、負の直流電圧ＶＮが上部電極２０に印加される期間の時間長ＤＮと正の直流電圧ＶＰが上部電極２０に印加される期間の時間長ＤＰは、上記の式（１）を満たしていてもよい。 In one embodiment, the length of time D N during which the negative DC voltage VN is applied to the upper electrode 20 and the length of time D P during which the positive DC voltage V P is applied to the upper electrode 20 are (1) may be satisfied.
　ここで、各周期ＣＰ内において正の直流電圧ＶＰが印加されている間に上部電極２０に蓄積される電荷量ＱＰは、下記の式（２）で表される。
Figure JPOXMLDOC01-appb-M000003
 ここで、Ｉｅ、ｅ、ｎｅ、Ａ、ｖｅ、Ｔｅはそれぞれ、プラズマ電子電流、素電荷、プラズマ電子密度、上部電極２０の下面の面積、電子平均速度、チャンバ内で生成されるプラズマにおける電子温度である。 Here, the charge amount QP accumulated in the upper electrode 20 while the positive DC voltage VP is being applied within each period CP is expressed by the following equation (2).
Figure JPOXMLDOC01-appb-M000003
 where I e , e, n e , A, v e , and T e are, respectively, the plasma electron current, the elementary charge, the plasma electron density, the area of the lower surface of the upper electrode 20, the electron average velocity generated in the chamber, is the electron temperature in the plasma.
　また、各周期ＣＰ内において負の直流電圧ＶＮが印加されている間に上部電極２０に蓄積される電荷量ＱＮは、下記の式（３）で表される。
Figure JPOXMLDOC01-appb-M000004
 ここで、Ｉｉ、ｕＢ、ｎｓはそれぞれ、プラズマイオン電流、ボーム速度、プラズマシースの端部（プラズマシースとバルクプラズマとの境界）での電子密度である。 Also, the charge amount QN accumulated in the upper electrode 20 while the negative DC voltage VN is being applied within each period CP is expressed by the following equation (3).
Figure JPOXMLDOC01-appb-M000004
 where I i , u B , and n s are the plasma ion current, Bohm velocity, and electron density at the edge of the plasma sheath (boundary between plasma sheath and bulk plasma), respectively.
　また、ｖｅ及びｕＢは、下記の式（４）及び式（５）で表される。
Figure JPOXMLDOC01-appb-M000005
Figure JPOXMLDOC01-appb-M000006
 ここで、Ｍは、イオン質量である。 Moreover, v e and u B are represented by the following formulas (4) and (5).
Figure JPOXMLDOC01-appb-M000005
Figure JPOXMLDOC01-appb-M000006
 where M is the ion mass.
　また、各周期ＣＰにおいて上部電極２０における電荷量がゼロになる条件、即ち、式（２）で表されるＱＰと式（３）で表されるＱＮが等しいとの条件と、式（２）～式（５）から、下記の式（６）が導かれる。
Figure JPOXMLDOC01-appb-M000007
 この式（６）から上記の式（１）が導かれる。時間長ＤＮと時間長ＤＰが式（１）を満たす場合には、各周期ＣＰにおいて、上部電極２０における蓄積電荷量がゼロになる。 Further, the condition that the amount of charge in the upper electrode 20 becomes zero in each period CP, that is, the condition that QP expressed by Equation (2) and QN expressed by Equation (3) are equal, and Equation ( From 2) to (5), the following formula (6) is derived.
Figure JPOXMLDOC01-appb-M000007
 The above equation (1) is derived from this equation (6). When the time length DN and the time length DP satisfy the formula (1), the accumulated charge amount in the upper electrode 20 becomes zero in each period CP.
　以下、再び図１を参照し、プラズマ処理装置１Ｂが用いられる場合を例にとって、方法ＭＴについて説明する。工程ＳＴａでは、負の直流電圧ＶＮが上部電極２０に周期的に印加される。負の直流電圧ＶＮが上部電極２０に印加されていない期間においては、正の直流電圧ＶＰが上部電極２０に印加されてもよい。 Hereinafter, referring to FIG. 1 again, the method MT will be described taking the case where the plasma processing apparatus 1B is used as an example. In step STa , a negative DC voltage VN is periodically applied to the upper electrode 20 . A positive DC voltage VP may be applied to the upper electrode 20 during periods when the negative DC voltage VN is not applied to the upper electrode 20 .
　工程ＳＴｂでは、電源４０からの電磁波が、処理ガスからプラズマを生成するために、チャンバ１０内に導入される。電磁波は、上部電極２０の下面に沿って定在波を形成するようにチャンバ１０内に導入される。電磁波は、電源５０Ｂからの負の直流電圧ＶＮが上部電極２０に印加されている期間ＰＮ内でのみチャンバ１０内に導入される。 In step STb, electromagnetic waves from the power supply 40 are introduced into the chamber 10 to generate plasma from the processing gas. An electromagnetic wave is introduced into chamber 10 to form a standing wave along the lower surface of upper electrode 20 . Electromagnetic waves are introduced into the chamber 10 only during the period PN during which the negative DC voltage VN from the power supply 50B is applied to the upper electrode 20 .
　方法ＭＴでは、少なくとも工程ＳＴｂが行われる期間において、ガス供給部２６からの処理ガスがチャンバ１０内に供給される。処理ガスは、基板Ｗを処理する任意のガスであり得る。 In the method MT, the processing gas is supplied from the gas supply unit 26 into the chamber 10 at least during the period when the step STb is performed. The process gas can be any gas that processes the substrate W. FIG.
　図７及び図８に示すように、処理ガス及び不活性ガスが、方法ＭＴが行われている間、連続的にチャンバ１０内に供給されてもよい。処理ガス及び不活性ガスはそれぞれ、ガス供給部２６及びガス供給部２８からチャンバ１０内に供給される。 As shown in FIGS. 7 and 8, the process gas and inert gas may be continuously supplied into the chamber 10 while the method MT is being performed. A process gas and an inert gas are supplied into the chamber 10 from a gas supply 26 and a gas supply 28, respectively.
　また、図７に示すように、原料ガスが、方法ＭＴが行われている間、連続的にチャンバ１０内に供給されてもよい。即ち、処理ガス及び原料ガスは、電源４０からの電磁波がチャンバ１０内に導入されている期間において、チャンバ１０内に同時に供給されてもよい。 Further, as shown in FIG. 7, the raw material gas may be continuously supplied into the chamber 10 while the method MT is being performed. That is, the processing gas and the source gas may be simultaneously supplied into the chamber 10 while the electromagnetic wave from the power supply 40 is being introduced into the chamber 10 .
　或いは、図８に示すように、原料ガスの供給は、電源４０からの電磁波がチャンバ１０内に導入されてない期間において行われ、電源４０からの電磁波がチャンバ１０内に導入されている期間において停止されてもよい。 Alternatively, as shown in FIG. 8, the raw material gas is supplied during the period when the electromagnetic wave from the power supply 40 is not introduced into the chamber 10, and during the period when the electromagnetic wave from the power supply 40 is introduced into the chamber 10. may be stopped.
　上部電極２０に印加される負の電圧が負の直流電圧である場合には、方法ＭＴによって、導電性を有する膜又は絶縁膜が基板Ｗ上に形成されてもよい。導電性を有する膜が形成される場合には、原料ガスとして、シランガス（例えば、ＳｉＨ４ガス又はトリメチルシランガス）のようなシリコン含有ガスを用いることができ、処理ガスとして、Ｈ２ガスのような還元ガスを用いることができる。或いは、導電性を有する膜が形成される場合には、原料ガスとして、ハロゲン化金属ガス（例えば、ＴｉＣｌ４ガス）のような金属含有ガスを用いることができ、処理ガスとして、Ｈ２ガスのような還元ガスを用いることができる。絶縁膜が形成される場合には、原料ガスとして、シランガス（例えば、ＳｉＨ４ガス又はトリメチルシランガス）のようなシリコン含有ガスを用いることができ、処理ガスとして、Ｎ２ガス又はＮＨ３ガスのような還元ガスを用いることができる。方法ＭＴが図７に示すタイミングチャートに従って行われる場合には、膜は、プラズマ支援化学気相成長（ＣＶＤ）法により基板Ｗ上に形成される。方法ＭＴが図８に示すタイミングチャートに従って行われる場合には、膜は、プラズマ支援原子層堆積（ＡＬＤ）法により基板Ｗ上に形成される。 If the negative voltage applied to the upper electrode 20 is a negative DC voltage, a conductive film or insulating film may be formed on the substrate W by the method MT. When a conductive film is formed, a silicon - containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) can be used as the source gas, and a processing gas such as H2 gas can be used as the processing gas. A reducing gas can be used. Alternatively, when a conductive film is to be formed, a metal - containing gas such as a metal halide gas (e.g., TiCl4 gas) can be used as the raw material gas, and H2 gas can be used as the processing gas. Such a reducing gas can be used. When an insulating film is formed, a silicon-containing gas such as silane gas (eg, SiH4 gas or trimethylsilane gas) can be used as the source gas, and a processing gas such as N2 gas or NH3 gas can be used. Any reducing gas can be used. When the method MT is performed according to the timing chart shown in FIG. 7, the film is formed on the substrate W by a plasma-enhanced chemical vapor deposition (CVD) method. When the method MT is performed according to the timing chart shown in FIG. 8, the film is formed on the substrate W by a plasma-assisted atomic layer deposition (ALD) method.
　以上、種々の例示的実施形態について説明してきたが、上述した例示的実施形態に限定されることなく、様々な追加、省略、置換、及び変更がなされてもよい。また、異なる実施形態における要素を組み合わせて他の実施形態を形成することが可能である。 Although various exemplary embodiments have been described above, various additions, omissions, substitutions, and modifications may be made without being limited to the exemplary embodiments described above. Also, elements from different embodiments can be combined to form other embodiments.
　以上の説明から、本開示の種々の実施形態は、説明の目的で本明細書で説明されており、本開示の範囲及び主旨から逸脱することなく種々の変更をなし得ることが、理解されるであろう。したがって、本明細書に開示した種々の実施形態は限定することを意図しておらず、真の範囲と主旨は、添付の特許請求の範囲によって示される。 From the foregoing description, it will be appreciated that various embodiments of the present disclosure have been set forth herein for purposes of illustration, and that various changes may be made without departing from the scope and spirit of the present disclosure. Will. Therefore, the various embodiments disclosed herein are not intended to be limiting, with a true scope and spirit being indicated by the following claims.
　１…プラズマ処理装置、１０…チャンバ、１８…基板支持部、２０…上部電極、４０…電源、５０…電源。 1... Plasma processing apparatus, 10... Chamber, 18... Substrate support, 20... Upper electrode, 40... Power supply, 50... Power supply.

Claims (15)

  1. 　プラズマ処理装置の上部電極に負の電圧を周期的に印加する工程と、
    　前記プラズマ処理装置のチャンバ内で処理ガスからプラズマを生成するために該チャンバ内に電磁波を導入する工程であり、該電磁波は、ＶＨＦ波又はＵＨＦ波であり、前記上部電極の下面に沿って前記チャンバ内で定在波を形成するように前記チャンバ内に導入される、該工程と、
    を含み、
    　前記電磁波は、前記負の電圧が前記上部電極に印加されている期間内でのみ前記チャンバ内に導入される、プラズマ処理方法。     periodically applying a negative voltage to the upper electrode of the plasma processing apparatus;
    a step of introducing an electromagnetic wave into the chamber of the plasma processing apparatus to generate plasma from a processing gas in the chamber, the electromagnetic wave being a VHF wave or a UHF wave, along the lower surface of the upper electrode; introduced into the chamber to form a standing wave within the chamber;
    including
    The plasma processing method, wherein the electromagnetic wave is introduced into the chamber only during a period in which the negative voltage is applied to the upper electrode.
  2. 　前記負の電圧は、高周波電圧に含まれる正の電圧を抑制するように該高周波電圧の波形を整形することにより、生成される、請求項１に記載のプラズマ処理方法。 The plasma processing method according to claim 1, wherein the negative voltage is generated by shaping the waveform of the high frequency voltage so as to suppress the positive voltage contained in the high frequency voltage.
  3. 　前記電磁波は、前記負の電圧が該負の電圧の最大の絶対値の半値以上の絶対値を有する各期間において、前記チャンバ内に導入される、請求項２に記載のプラズマ処理方法。 3. The plasma processing method according to claim 2, wherein said electromagnetic wave is introduced into said chamber in each period in which said negative voltage has an absolute value equal to or greater than half the maximum absolute value of said negative voltage.
  4. 　前記電磁波の前記チャンバ内への導入は、前記負の電圧が前記上部電極に印加される各期間内で、時点ｔ１から開始され、時点ｔ２で終了され、
    　前記時点ｔ１及びｔ２は、ｔ０＜ｔ１＜ｔ２＜ｔ３を満たし、且つ、ｔ１－ｔ０＞（１／６）（ｔ３－ｔ０）及びｔ３－ｔ２＞（１／６）（ｔ３－ｔ０）を満たし、
    　ここで、前記ｔ０、前記ｔ３はそれぞれ、前記負の電圧が前記上部電極に印加される各期間の開始時点、終了時点である、
    請求項２に記載のプラズマ処理方法。     introduction of the electromagnetic wave into the chamber begins at time t1 and ends at time t2 within each period in which the negative voltage is applied to the top electrode;
    The time points t1 and t2 satisfy t0<t1<t2<t3, and satisfy t1-t0>(1/6)(t3-t0) and t3-t2>(1/6)(t3-t0) ,
    Here, t0 and t3 are the start and end points of each period in which the negative voltage is applied to the upper electrode, respectively.
    The plasma processing method according to claim 2.
  5. 　前記負の電圧は、前記上部電極に周期的に印加される負の直流電圧である、請求項１に記載のプラズマ処理方法。 The plasma processing method according to claim 1, wherein said negative voltage is a negative DC voltage periodically applied to said upper electrode.
  6. 　前記負の電圧が前記上部電極に印加されていない期間において、正の直流電圧が前記上部電極に印加される、請求項５に記載のプラズマ処理方法。 The plasma processing method according to claim 5, wherein a positive DC voltage is applied to the upper electrode during a period in which the negative voltage is not applied to the upper electrode.
  7. 　前記負の直流電圧の絶対値は、前記正の直流電圧の絶対値よりも大きい、請求項６に記載のプラズマ処理方法。 The plasma processing method according to claim 6, wherein the absolute value of said negative DC voltage is greater than the absolute value of said positive DC voltage.
  8. 　前記負の直流電圧が印加される期間の時間長ＤＮと前記正の直流電圧が印加される期間の時間長ＤＰは、
    Figure JPOXMLDOC01-appb-M000001
     を満たし、ここで、ＶＰは前記正の直流電圧のレベルであり、Ｔｅは前記チャンバ内で生成されるプラズマにおける電子温度である、
    請求項７に記載のプラズマ処理方法。     The time length DN of the period during which the negative DC voltage is applied and the time length DP of the period during which the positive DC voltage is applied are
    Figure JPOXMLDOC01-appb-M000001
     where V P is the level of the positive DC voltage and T e is the electron temperature in the plasma generated in the chamber.
    The plasma processing method according to claim 7.
  9. 　前記チャンバ内に原料ガスを供給する工程を更に含み、
    　前記処理ガスは、前記チャンバ内で基板上に前記原料ガスから付着した原料を還元させる還元ガスである、
    請求項１～８の何れか一項に記載のプラズマ処理方法。     further comprising supplying a raw material gas into the chamber;
    The processing gas is a reducing gas that reduces the raw material deposited on the substrate from the raw material gas in the chamber.
    The plasma processing method according to any one of claims 1 to 8.
  10. 　前記原料ガスと前記処理ガスは、前記電磁波が前記チャンバ内に導入されている期間において、前記チャンバ内に同時に供給される、請求項９に記載のプラズマ処理方法。 The plasma processing method according to claim 9, wherein said raw material gas and said processing gas are simultaneously supplied into said chamber while said electromagnetic wave is being introduced into said chamber.
  11. 　前記原料ガスの前記チャンバ内への供給は、前記電磁波が前記チャンバ内に導入されてない期間において行われ、前記電磁波が前記チャンバ内に導入されている期間において停止される、請求項９に記載のプラズマ処理方法。 10. The supply of the raw material gas into the chamber according to claim 9, wherein the supply of the raw material gas into the chamber is performed during a period in which the electromagnetic wave is not introduced into the chamber, and is stopped during a period in which the electromagnetic wave is introduced into the chamber. plasma treatment method.
  12. 　チャンバと、
    　前記チャンバ内に設けられた基板支持部と、
    　前記基板支持部の上方に設けられた上部電極と、
    　前記上部電極に負の電圧を周期的に印加するように構成された第１の電源と、
    　前記チャンバ内で処理ガスからプラズマを生成するために電磁波を発生するように構成された第２の電源であり、前記電磁波は、ＶＨＦ波又はＵＨＦ波であり、前記上部電極の下面に沿って前記チャンバ内で定在波を形成するように前記チャンバ内に導入される、該第２の電源と、
    　を備え、
    　前記第２の電源は、前記負の電圧が前記上部電極に印加されている期間内でのみ前記チャンバ内に前記電磁波を導入するように構成されている、
    プラズマ処理装置。     a chamber;
    a substrate support provided within the chamber;
    an upper electrode provided above the substrate support;
    a first power supply configured to periodically apply a negative voltage to the upper electrode;
    a second power supply configured to generate electromagnetic waves to generate a plasma from a process gas within the chamber, the electromagnetic waves being VHF waves or UHF waves; the second power source introduced into the chamber to form a standing wave within the chamber;
    with
    The second power supply is configured to introduce the electromagnetic wave into the chamber only during a period in which the negative voltage is applied to the upper electrode.
    Plasma processing equipment.
  13. 　誘電体から形成されており、前記電磁波をそこから前記チャンバ内に導入するように前記上部電極の外周に沿って設けられた導入部を更に備え、
    　前記上部電極は、前記処理ガスを前記チャンバ内に導入するシャワーヘッドを構成している、
    請求項１２に記載のプラズマ処理装置。     further comprising an introduction section formed from a dielectric material and provided along the perimeter of the upper electrode to introduce the electromagnetic wave therefrom into the chamber;
    the upper electrode forms a showerhead that introduces the process gas into the chamber;
    The plasma processing apparatus according to claim 12.
  14. 　前記第１の電源は、高周波電圧を発生するように構成されており、
    　前記高周波電圧に含まれる正の電圧を抑制するように前記高周波電圧の波形を整形するよう構成された波形整形器を更に備える、
    請求項１２又は１３に記載のプラズマ処理装置。     The first power supply is configured to generate a high frequency voltage,
    further comprising a waveform shaper configured to shape the waveform of the high-frequency voltage so as to suppress positive voltages contained in the high-frequency voltage;
    The plasma processing apparatus according to claim 12 or 13.
  15. 　前記第１の電源は、前記負の電圧として負の直流電圧を前記上部電極に周期的に印加するように構成されている、請求項１２又は１３に記載のプラズマ処理装置。 14. The plasma processing apparatus according to claim 12, wherein said first power supply is configured to periodically apply a negative DC voltage to said upper electrode as said negative voltage.
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JP2013122966A (en) * 2011-12-09 2013-06-20 Tokyo Electron Ltd Plasma processing method and plasma processing device
WO2017188029A1 (en) * 2016-04-28 2017-11-02 東京エレクトロン株式会社 Plasma treatment apparatus
WO2018101065A1 (en) * 2016-11-30 2018-06-07 東京エレクトロン株式会社 Plasma treatment device
JP2019216182A (en) * 2018-06-13 2019-12-19 東京エレクトロン株式会社 Deposition device

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JP2010205823A (en) * 2009-03-02 2010-09-16 Tokyo Electron Ltd Plasma treatment apparatus
JP2013122966A (en) * 2011-12-09 2013-06-20 Tokyo Electron Ltd Plasma processing method and plasma processing device
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