WO2021093056A1 - Combined sensor and method for manufacture thereof - Google Patents

Abstract

Provided are a combined sensor (100) and a method for manufacture thereof. The combined sensor (100) comprises a first wafer (10), a second wafer (20), and a plurality of sensors; the first wafer (10) and the second wafer (20) are bonded and connected, and enclosed to form a plurality of independent sensors; an electrical isolation structure (30) is arranged between two adjacent sensors so as to provide a miniaturized, integrated, and combined sensor (100) having less electromagnetic interference.

Description

Combined sensor and manufacturing method thereof Technical field

The invention relates to the technical field of sensors, in particular to a combined sensor and a manufacturing method thereof.

Background technique

In related technologies, combined sensors are generally manufactured by separately manufacturing multiple sensors and integrating them on the same substrate using multi-chip assembly technology. Such combined sensors often have low integration, large footprint, long interconnection lines, and relatively high reliability. Low problem. In order to solve this problem, micro-nano processing technology is usually used to fabricate multiple chips on the same wafer. The integration is high, which reduces the occupied area and the complexity of the fabrication process, and improves the reliability. However, in this combination sensor The distance between two adjacent sensors is small, and the electromagnetic interference is large.

The above content is only used to assist the understanding of the technical solution of the present invention, and does not mean that the above content is recognized as prior art.

Summary of the invention

The main purpose of the present invention is to provide a combined sensor and a manufacturing method thereof, aiming to provide a combined sensor that is miniaturized, integrated and has less electromagnetic interference.

In order to achieve the above objective, the combined sensor proposed by the present invention includes a first wafer, a second wafer, and a plurality of sensors. The first wafer and the second wafer are bonded and connected, and surround The sensors are combined to form a plurality of independent sensors, and an electrical isolation structure is arranged between two adjacent sensors.

Optionally, the combined sensor includes at least two of an inertial sensor, a humidity sensor, an air pressure sensor, and a temperature sensor.

Optionally, the first wafer and the second wafer both include two silicon dioxide layers and a silicon layer, and the silicon layer is arranged between the two silicon dioxide layers, The electrical isolation structure penetrates at least two silicon dioxide layers opposite to the first wafer and the second wafer.

Optionally, one of the first wafer and the second wafer is provided with a gold bonding encapsulation layer, the other of which is provided with a tin bonding encapsulation layer, the gold bonding encapsulation layer and the tin The bonding encapsulation layer is bonded and connected.

The present invention also provides a method for manufacturing a combined sensor, which includes the following steps:

Provide the first wafer and the second wafer;

Etching the first wafer and the second wafer respectively to obtain a plurality of sensor structures;

Etching the first wafer and the second wafer respectively to obtain a plurality of electrical isolation structures, one of the electrical isolation structures is located between two adjacent sensor structures;

The first wafer and the second wafer are aligned, bonded and packaged by a bonding process to obtain a combined sensor.

Optionally, the step of aligning and bonding the first wafer and the second wafer by using a bonding process includes:

Perform patterned metallization and electroplating of gold on the surface of the first wafer to obtain a gold bonding package layer;

Pattern metallization and electroplating tin on the surface of the second wafer to obtain a tin-bonded packaging layer;

The gold bonding encapsulation layer and the tin bonding encapsulation layer are aligned and bonded and packaged.

Optionally, the plurality of sensor structures include an inertial sensor structure, a humidity sensor structure, an air pressure sensor structure, and a temperature sensor structure.

Optionally, the inertial sensor structure is manufactured by the following steps:

Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two first electrode layers;

The first wafer and the second wafer are respectively etched to obtain two vibrator structures, and the vibrator structures are located between the two first electrode layers.

Optionally, the humidity sensor structure is manufactured by the following steps:

Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two second electrode layers;

A patterned deposition operation is performed on the surface of the first wafer to obtain a first dielectric strain layer. The first dielectric strain layer is located between the two second electrode layers and is located on the first Depositing a third electrode layer on the surface of the dielectric strain layer facing away from the first wafer;

Depositing and corroding a moisture-sensitive material on the surface of the third electrode layer facing away from the first dielectric strain layer to obtain a moisture-sensitive layer;

Etching is performed on the surface of the second wafer that faces away from the sensor structure to obtain a first sensing channel. The first sensing channel penetrates the second wafer and corresponds to the moisture sensing layer.

Optionally, the air pressure sensor structure is manufactured by the following steps:

Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two fourth electrode layers;

Perform patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain a second dielectric strain layer, the second dielectric strain layer being located on the two fourth electrodes Between the layers, and deposit a fifth electrode layer on the surface of each of the dielectric strained layers;

Etching is performed on the surface of the second wafer that faces away from the sensor structure to obtain a second sensing channel corresponding to the second dielectric strain layer.

Optionally, the temperature sensor structure is manufactured by the following steps:

Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two sixth electrode layers;

Etching the first wafer to obtain a temperature sensor cavity, the temperature sensor cavity is located between the two sixth electrode layers, and conductive particles are injected into the temperature sensor cavity;

A patterned deposition operation is performed on the surface of the second wafer to obtain a third dielectric strain layer. The third dielectric strain layer is located between the two sixth electrode layers and is located on the third A seventh electrode layer is deposited on the surface of the dielectric strain layer;

Etching is performed on the surface of the second wafer that faces away from the sensor structure to obtain a third sensing channel. The third sensing channel penetrates the second wafer.

In the technical scheme of the present invention, the first wafer and the second wafer are bonded and connected, and the two are enclosed to form a plurality of independent sensors, and at the same time, an electrical isolation structure is arranged between two adjacent sensors. Since the combined sensor of the present invention is fabricated on two wafer-level wafer structures, miniaturization and integration can be achieved in this way. In addition, multiple sensors are independent of each other and shielded from each other by an electrical isolation structure, which can improve the anti-electromagnetic interference ability of the sensors.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are some embodiments of the present invention. For those of ordinary skill in the art, without creative work, other drawings can be obtained based on the structure shown in these drawings.

FIG. 1 is a schematic cross-sectional structure diagram of an embodiment of the combined sensor of the present invention;

Figure 2 is a partial cross-sectional view of the structure of the combined sensor;

Figure 3 is another partial cross-sectional structure diagram of the combined sensor;

4 is a schematic diagram of a step flow diagram of an embodiment of a manufacturing method of a combined sensor of the present invention;

FIG. 5 is a schematic diagram of the detailed flow of step S40 in FIG. 4;

Fig. 6 is a schematic flow diagram of the manufacturing steps of the inertial sensor structure;

FIG. 7 is a schematic diagram of the manufacturing steps of the humidity sensor structure;

FIG. 8 is a schematic diagram of the manufacturing steps of the air pressure sensor structure;

Figure 9 is a schematic flow diagram of the manufacturing steps of the temperature sensor structure;.

Attached icon number description:

Label	name	Label		name
100	Combination sensor	52	First dielectric strain layer
10	First wafer	53	Third electrode layer
11	Silicon dioxide layer	54	Moisture Sensitive Layer
12	Silicon layer	55	The first sensing channel
13	Gold bonding encapsulation layer	60	Barometric pressure sensor
20	Second wafer	61	Fourth electrode layer
twenty one	Tin bond encapsulation layer	62	Second dielectric strain layer
30	Electrical isolation structure	63	Fifth electrode layer
31	First groove	64	Second sensing channel
32	Second groove	70	Temperature Sensor
40	Inertial sensor	71	Sixth electrode layer
41	First electrode layer	72	Temperature sensor cavity
42	Vibrator structure	73	Third dielectric strain layer

50	Humidity Sensor	74	Seventh electrode layer
51	Second electrode layer	75	The third sensing channel

The realization of the objectives, functional characteristics and advantages of the present invention will be further described in conjunction with the embodiments and with reference to the accompanying drawings.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

It should be noted that all directional indications (such as up, down, left, right, front, back...) in the embodiments of the present invention are only used to explain the relationship between components in a specific posture (as shown in the accompanying drawings). If the relative position relationship, movement situation, etc. change, the directional indication will change accordingly.

In addition, in the present invention, descriptions such as "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

In the present invention, unless otherwise clearly specified and limited, the terms "connected", "fixed", etc. should be understood in a broad sense. For example, "fixed" can be a fixed connection, a detachable connection, or a whole; It can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be an internal communication between two components or an interaction relationship between two components, unless specifically defined otherwise. For those of ordinary skill in the art, the specific meanings of the above-mentioned terms in the present invention can be understood according to specific situations.

In addition, the technical solutions between the various embodiments of the present invention can be combined with each other, but they must be based on what can be achieved by a person of ordinary skill in the art. When the combination of technical solutions is contradictory or cannot be achieved, it should be considered that this combination of technical solutions It does not exist and does not fall within the scope of protection claimed by the present invention.

The present invention proposes a combined sensor 100.

1 to 3, in an embodiment of the combined sensor 100 of the present invention, the combined sensor 100 includes a first wafer 10, a second wafer 20 and a plurality of sensors, the first wafer 10 and the second wafer The wafer 20 is bonded and connected to form a plurality of independent sensors, and an electrical isolation structure 30 is provided between two adjacent sensors.

Here, the first wafer 10 and the second wafer 20 are both wafer-level structures, and the two are connected by bonding. The first wafer 10 and the second wafer 20 are enclosed to form a plurality of sensors, and the plurality of sensors are formed independently of each other, that is, each sensor has an independent cavity structure. In this way, miniaturization and integration of the combined sensor 100 can be achieved. In addition, an electrical isolation structure 30 is provided between two adjacent sensors. The electrical isolation structure 30 is generally a trench structure. The electrical isolation structure 30 is provided through the first wafer 10 and the second wafer 20, which can effectively avoid Electromagnetic interference between sensors.

Therefore, it is understandable that the technical solution of the present invention is that the first wafer 10 and the second wafer 20 are bonded and connected, and the two are enclosed to form a plurality of independent sensors, and two adjacent sensors are at the same time. An electrical isolation structure 30 is provided therebetween. Since the combined sensor 100 of the present invention is fabricated on a wafer-level wafer structure, miniaturization and integration can be achieved. In addition, multiple sensors are independent of each other and shielded from each other by the electrical isolation structure 30, so that the anti-electromagnetic interference capability of the sensors can be improved.

Optionally, the combined sensor 100 includes at least two of an inertial sensor 40, a humidity sensor 50, an air pressure sensor 60, and a temperature sensor 70.

Here, the inertial sensor 40 is mainly used to detect acceleration, tilt, impact, vibration, rotation and multi-degree-of-freedom motion. The humidity sensor 50 is mainly used to detect the humidity of the air, the air pressure sensor 60 is used to detect atmospheric pressure, and the temperature sensor 70 is used to detect temperature. The combination sensor 100 may be two combinations, three combinations, or four combinations.

Optionally, the combined sensor 100 here is a combination of an inertial sensor 40, a humidity sensor 50, an air pressure sensor 60, and a temperature sensor 70, which can realize multiple functions of detecting acceleration, humidity, air pressure, and temperature at the same time.

Optionally, both the first wafer 10 and the second wafer 20 include two silicon dioxide layers 11 and a silicon layer 12, the silicon layer 12 is arranged between the two silicon dioxide layers 11, and is electrically isolated The structure 30 penetrates at least two silicon dioxide layers 11 opposite to the first wafer 10 and the second wafer 20. Here, the first wafer 10 and the second wafer 20 have the same structure and size, and both include a silicon dioxide layer 11, a silicon layer 12, and a silicon dioxide layer 11 stacked in sequence. The electrical isolation structure 30 is a trench structure, which may be penetrated through the two silicon dioxide layers 11 opposite to the first wafer 10 and the second wafer 20, or may be penetrated through the first wafer 10 and the second wafer 20. The two silicon dioxide layers 11 and the two silicon layers 12 opposite to the second wafer 20 can isolate the electromagnetic interference of the sensor more effectively. It can be understood that the first wafer 10 is provided with a first trench 31, the first trench 31 is penetrated through the silicon dioxide layer 11 and the silicon layer 12, and the second wafer 20 is provided with a second trench 32. The second trench 32 penetrates the silicon dioxide layer 11 and the silicon layer 12, and the first trench 31 and the second trench 32 surround the electrical isolation structure 30.

In an embodiment of the present invention, one of the first wafer 10 and the second wafer 20 is provided with a gold bonding encapsulation layer 13, and the other is provided with a tin bonding encapsulation layer 21, and the gold bonding encapsulation The layer 13 is bonded and connected to the tin bonding encapsulation layer 21.

Here, the gold-tin bonding process is used to bond and connect the first wafer 10 and the second wafer 20. It can be understood that the surface of the first wafer 10 is provided with a gold bonding encapsulation layer 13, and the surface of the second wafer 20 The tin bonding encapsulation layer 21 is provided, and the gold bonding encapsulation layer 13 and the tin bonding encapsulation layer 21 are bonded to complete the bonding connection of the first wafer 10 and the second wafer 20. Of course, it is also possible that the gold bonding package layer 13 is disposed on the surface of the second wafer 20 and the tin bonding package layer 21 is disposed on the surface of the first wafer 10.

The present invention also provides a manufacturing method of the combined sensor 100 for manufacturing the combined sensor 100 as described above.

Referring to FIG. 4, in an embodiment of the combined sensor 100 of the present invention, the manufacturing method of the combined sensor 100 includes the following steps:

S10, providing a first wafer 10 and a second wafer 20;

S20, etching the first wafer 10 and the second wafer 20 respectively to obtain multiple sensor structures;

S30, etching the first wafer 10 and the second wafer 20 respectively to obtain a plurality of electrical isolation structures 30, one of which is located between two adjacent sensor structures;

S40, the first wafer 10 and the second wafer 20 are aligned, bonded and packaged by a bonding process to obtain a combined sensor 100.

Here, the first wafer 10 and the second wafer 20 are both wafer-level structures, and both include a silicon dioxide layer 11, a silicon layer 12, and a silicon dioxide layer 11 stacked in sequence. Firstly, the first wafer 10 and the second wafer 20 are respectively etched to obtain a plurality of sensor structures; then the first wafer 10 and the second wafer 20 are respectively etched to obtain a plurality of electrical isolation structures 30. The electrical isolation structure 30 is a trench structure, and the electrical isolation structure 30 is located between two adjacent sensor structures. Finally, the bonding process is used to align the first wafer 10 and the second wafer 20 with the bonding and packaging operation, and the combined sensor 100 can be obtained. The combined sensor 100 is composed of the first wafer 10 and the second wafer. The sheet 20 is composed of a plurality of sensors enclosed and formed. The combined sensor 100 manufactured by the present invention has the advantages of miniaturization, integration, multi-function, and small electromagnetic interference.

Here, the electrical isolation structure 30 is mainly manufactured by the following steps: the silicon dioxide layer 11 of the first wafer 10 is etched using RIE etching and deep silicon etching techniques to obtain a plurality of first trenches 31, a first trench 31 is located between two adjacent sensor structures. Optionally, the first trench 31 penetrates the silicon dioxide layer 11 and penetrates the silicon layer 12. The same method is used to etch the silicon dioxide layer 11 of the second wafer 20 to produce a plurality of second trenches 32. A second trench 32 is located between two adjacent sensor structures. Optionally, The second trench 32 penetrates the silicon dioxide layer 11 and penetrates the silicon layer 12. Finally, the first wafer 10 and the second wafer 20 are aligned with the bonding package, and the first trench 31 and the second trench 32 are enclosed to form an electrical isolation structure 30.

Further, referring to FIG. 5, in step S40, it includes:

S401, performing patterned metallization and electroplating gold on the surface of the first wafer 10 to obtain a gold bonding package layer 13;

S402, performing patterned metallization and electroplating tin on the surface of the second wafer 20 to obtain a tin-bonded packaging layer 21;

S403, aligning the gold bonding encapsulation layer 13 and the tin bonding encapsulation layer 21 and bonding and packaging.

Here, the first wafer 10 and the second wafer 20 are aligned and packaged using a wafer-level gold-tin bonding process, which can make the manufactured composite sensor 100 more reliable and stable. It should be noted that the sequence of step S401 and step S402 is not limited, and can also be operated at the same time.

In an embodiment of the present invention, the multiple sensor structures include an inertial sensor 40 structure, a humidity sensor 50 structure, an air pressure sensor 60 structure, and a temperature sensor 70 structure.

Here, multiple sensor structures include the inertial sensor 40 structure, the humidity sensor 50 structure, the air pressure sensor 60 structure, and the temperature sensor 70 structure. The combined sensor 100 finally produced is a combination of these four sensors, that is, a multifunctional integrated sensor. It can realize the multi-function detection of acceleration, humidity, air pressure and temperature at the same time.

In an embodiment of the present invention, referring to FIG. 6, the structure of the inertial sensor 40 is manufactured by the following steps:

Step S211, performing patterned deposition operations on the surfaces of the first wafer 10 and the second wafer 20 respectively to obtain two first electrode layers 41;

In step S212, the first wafer 10 and the second wafer 20 are respectively etched to obtain two vibrator structures 42 respectively, and the vibrator structures 42 are located between the two first electrode layers 41.

Specifically, first, pattern deposition is performed on the surface of the first wafer 10 using thin film deposition technology to obtain two first electrode layers 41. In the same way, two first electrode layers 41 are deposited on the surface of the second wafer 20.极层41。 Electrode layer 41. Then RIE etching and deep silicon etching techniques are used to etch the silicon dioxide layer 11 and the silicon layer 12 of the first wafer 10 to obtain the vibrator structure 42 of the inertial sensor 40. The vibrator structure 42 is located between the two first electrode layers 41 In the same way, the silicon dioxide layer 11 and the silicon layer 12 of the second wafer 20 are etched to obtain the oscillator structure 42. Such an operation can obtain the structure of the inertial sensor 40, and subsequently align the etched structure to the package to obtain the inertial sensor 40.

In an embodiment of the present invention, referring to FIG. 7, the humidity sensor 50 is manufactured by the following steps:

Step S221, performing patterned deposition operations on the surfaces of the first wafer 10 and the second wafer 20 respectively to obtain two second electrode layers 51;

Step S222, performing a patterned deposition operation on the surface of the first wafer 10 to obtain a first dielectric strain layer 52, the first dielectric strain layer 52 being located between the two second electrode layers 51 , And deposit a third electrode layer 53 on the surface of the first dielectric strain layer 52 facing away from the first wafer 10;

Step S223, depositing and corroding a moisture-sensitive material on the surface of the third electrode layer 53 facing away from the first dielectric strain layer 52 to obtain the moisture-sensitive layer 54;

In step S224, etching is performed on the surface of the second wafer 20 facing away from the sensor structure to obtain a first sensing channel 55. The first sensing channel 55 penetrates the second wafer 20 and corresponds to The moisture-sensitive layer 54.

Specifically, firstly, pattern deposition is performed on the surface of the first wafer 10 using thin film deposition technology to obtain two second electrode layers 51; then, pattern deposition is performed on the surface of the first wafer 10 using thin film deposition technology. Obtain the first dielectric strain layer 52. The first dielectric strain layer 52 is located between the two second electrode layers 51. Then, a thin film deposition technique is used on the surface of the first dielectric strain layer 52 facing away from the first wafer 10 After deposition, the third electrode layer 53 is obtained. Afterwards, a humidity sensitive material is deposited and etched on the surface of the third electrode layer 53 facing away from the first dielectric strain layer 52 to obtain a humidity sensitive layer 54 where the humidity sensitive material may be polyimide, porous silicon or other humidity sensitive materials . In the same way, two second electrode layers 51 are fabricated on the surface of the second wafer 20. In addition, the silicon dioxide layer 11 and the silicon layer 12 of the second wafer 20 are etched using RIE etching and deep silicon etching techniques to obtain a first sensing channel 55 for sensing changes in external humidity. The first sensing channel 55 It penetrates the second wafer 20 and corresponds to the moisture sensitive layer 54. In this way, the structure of the humidity sensor 50 can be obtained, and the humidity sensor 50 can be obtained by subsequently aligning the etched structure with the package.

In an embodiment of the present invention, referring to FIG. 8, the air pressure sensor 60 is manufactured by the following steps:

Step S231, performing patterned deposition operations on the surfaces of the first wafer 10 and the second wafer 20 respectively to obtain two fourth electrode layers 61;

In step S232, a patterned deposition operation is performed on the surfaces of the first wafer 10 and the second wafer 20, respectively, to obtain a second dielectric strain layer 62, where the second dielectric strain layer 62 is located Between the two fourth electrode layers 61, and deposit a fifth electrode layer 63 on the surface of each of the dielectric strained layers;

In step S233, etching is performed on the surface of the second wafer 20 facing away from the sensor structure to obtain a second sensing channel 64 corresponding to the second dielectric strain layer 62.

Specifically, firstly, pattern deposition is performed on the surface of the first wafer 10 using thin film deposition technology to obtain two fourth electrode layers 61; then, pattern deposition is performed on the surface of the first wafer 10 using thin film deposition technology, Obtain the second dielectric strain layer 62, the second dielectric strain layer 62 is located between the two fourth electrode layers 61, and then use the thin film deposition technology on the surface of the second dielectric strain layer 62 facing away from the first wafer 10 Deposited, the fifth electrode layer 63 is obtained. In the same way, two fourth electrode layers 61, a second dielectric strain layer 62 and a fifth electrode are fabricated on the surface of the second wafer 20. In addition, the silicon dioxide layer 11 and the silicon layer 12 of the second wafer 20 are etched using RIE etching and deep silicon etching techniques to obtain a second sensing channel 64 for sensing changes in external air pressure. Corresponds to the second dielectric strain layer 62. In this way, the structure of the air pressure sensor 60 can be obtained. The structure of the air pressure sensor 60 is a closed and high-aspect-ratio capacitive structure, and subsequently the etched structure is aligned and packaged to obtain the air pressure sensor 60.

In an embodiment of the present invention, referring to FIG. 9, the structure of the temperature sensor 70 is manufactured by the following steps:

Step S241, performing patterned deposition operations on the surfaces of the first wafer 10 and the second wafer 20, respectively, to obtain two sixth electrode layers 71

In step S242, the first wafer 10 is etched to obtain a temperature sensor 70 cavity. The cavity is located between the two sixth electrode layers 71, and conductive is injected into the temperature sensor 70 cavity. particle;

In step S243, a patterned deposition operation is performed on the surface of the second wafer 20 to obtain a third dielectric strain layer 73, which is located between the two sixth electrode layers 71 , And deposit a seventh electrode layer 74 on the surface of the third dielectric strain layer 73;

In step S244, etching is performed on the surface of the second wafer 20 facing away from the sensor structure to obtain a seventh electrode layer 75 that penetrates the second wafer 20.

Specifically, first, pattern deposition is performed on the surface of the first wafer 10 using thin film deposition technology to obtain two sixth electrode layers 71; then, the silicon of the first wafer 10 is processed by RIE etching and deep silicon etching technology. The layer 12 and the silicon dioxide layer 11 are etched to obtain a temperature sensor cavity 72, and conductive particles are injected into the temperature sensor 70 cavity to increase the conductivity of silicon. Using the same method, two sixth electrode layers 71 are fabricated on the surface of the second wafer 20, and pattern deposition is performed on the surface of the second wafer 20 using thin film deposition technology to obtain a third dielectric strain layer 73 , The third dielectric strain layer 73 is located between the two sixth electrode layers 71, and then a thin film deposition technique is used to deposit the third dielectric strain layer 73 on the surface of the second wafer 20 away from the second wafer 20 to obtain the seventh electrode layer 74 . Finally, the silicon dioxide layer 11 and the silicon layer 12 of the second wafer 20 are etched using RIE etching and deep silicon etching techniques to obtain a seventh electrode layer 75, which is used to sense changes in external temperature. Pierce through the second wafer 20. In this way, the structure of the temperature sensor 70 can be obtained, and then the etched structure is aligned with the package to obtain the temperature sensor 70.

The above descriptions are only the preferred embodiments of the present invention, and do not limit the scope of the present invention. Under the inventive concept of the present invention, any equivalent structural transformations made by using the contents of the description and drawings of the present invention, or direct/indirect use All other related technical fields are included in the scope of patent protection of the present invention.

Claims (11)

1. A combined sensor, characterized in that the combined sensor includes a first wafer, a second wafer and a plurality of sensors, the first wafer and the second wafer are bonded and connected, and A plurality of said sensors are enclosed to form mutually independent, and an electrical isolation structure is arranged between two adjacent sensors.
2. The combined sensor according to claim 1, wherein the combined sensor includes at least two of an inertial sensor, a humidity sensor, an air pressure sensor, and a temperature sensor.
3. The combined sensor according to claim 1, wherein the first wafer and the second wafer each comprise two silicon dioxide layers and one silicon layer, and the silicon layers are arranged on the two silicon dioxide layers. Between the silicon dioxide layers, the electrical isolation structure penetrates at least two silicon dioxide layers opposite to the first wafer and the second wafer.
4. The combined sensor according to any one of claims 1 to 3, wherein one of the first wafer and the second wafer is provided with a gold bonding encapsulation layer, and the other is provided with a gold bonding encapsulation layer There is a tin bonding encapsulation layer, and the gold bonding encapsulation layer is bonded and connected to the tin bonding encapsulation layer.
5. A manufacturing method of a combined sensor, characterized in that, the manufacturing method of the combined sensor includes the following steps:

   Provide the first wafer and the second wafer;

   Etching the first wafer and the second wafer respectively to obtain a plurality of sensor structures;

   Etching the first wafer and the second wafer respectively to obtain a plurality of electrical isolation structures, one of the electrical isolation structures is located between two adjacent sensor structures;

   The first wafer and the second wafer are aligned, bonded and packaged by a bonding process to obtain a combined sensor.
6. The method for manufacturing a combined sensor according to claim 5, wherein the step of performing alignment bonding and packaging of the first wafer and the second wafer by a bonding process comprises:

   Perform patterned metallization and electroplating of gold on the surface of the first wafer to obtain a gold bonding package layer;

   Pattern metallization and electroplating tin on the surface of the second wafer to obtain a tin-bonded packaging layer;

   The gold bonding encapsulation layer and the tin bonding encapsulation layer are aligned and bonded and packaged.
7. 5. The method of manufacturing a combined sensor according to claim 5, wherein the plurality of sensor structures include an inertial sensor structure, a humidity sensor structure, an air pressure sensor structure, and a temperature sensor structure.
8. 8. The manufacturing method of the combined sensor according to claim 7, wherein the inertial sensor structure is manufactured by the following steps:

   Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two first electrode layers;

   The first wafer and the second wafer are respectively etched to obtain two vibrator structures, and the vibrator structures are located between the two first electrode layers.
9. 8. The method for manufacturing a combined sensor according to claim 7, wherein the humidity sensor structure is manufactured by the following steps:

   Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two second electrode layers;

   A patterned deposition operation is performed on the surface of the first wafer to obtain a first dielectric strain layer. The first dielectric strain layer is located between the two second electrode layers and is located on the first Depositing a third electrode layer on the surface of the dielectric strain layer facing away from the first wafer;

   Depositing and corroding a moisture-sensitive material on the surface of the third electrode layer facing away from the first dielectric strain layer to obtain a moisture-sensitive layer;

   Etching is performed on the surface of the second wafer that faces away from the sensor structure to obtain a first sensing channel. The first sensing channel penetrates the second wafer and corresponds to the moisture sensing layer.
10. The manufacturing method of the combined sensor according to claim 7, wherein the structure of the air pressure sensor is manufactured by the following steps:

    Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two fourth electrode layers;

    Perform patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain a second dielectric strain layer, the second dielectric strain layer being located on the two fourth electrodes Between the layers, and deposit a fifth electrode layer on the surface of each of the dielectric strained layers;

    Etching is performed on the surface of the second wafer that faces away from the sensor structure to obtain a second sensing channel corresponding to the second dielectric strain layer.
11. 8. The manufacturing method of the combined sensor according to claim 7, wherein the temperature sensor structure is manufactured by the following steps:

    Performing patterned deposition operations on the surfaces of the first wafer and the second wafer respectively to obtain two sixth electrode layers;

    Etching the first wafer to obtain a temperature sensor cavity, the temperature sensor cavity is located between the two sixth electrode layers, and conductive particles are injected into the temperature sensor cavity;

    A patterned deposition operation is performed on the surface of the second wafer to obtain a third dielectric strain layer. The third dielectric strain layer is located between the two sixth electrode layers and is located on the third A seventh electrode layer is deposited on the surface of the dielectric strain layer;

    Etching is performed on the surface of the second wafer that faces away from the sensor structure to obtain a third sensing channel. The third sensing channel penetrates the second wafer.

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