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WO2012024438A3 - Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing - Google Patents

Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing Download PDF

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Publication number
WO2012024438A3
WO2012024438A3 PCT/US2011/048140 US2011048140W WO2012024438A3 WO 2012024438 A3 WO2012024438 A3 WO 2012024438A3 US 2011048140 W US2011048140 W US 2011048140W WO 2012024438 A3 WO2012024438 A3 WO 2012024438A3
Authority
WO
WIPO (PCT)
Prior art keywords
large area
workpiece
electrodepositing
thin films
solar module
Prior art date
Application number
PCT/US2011/048140
Other languages
French (fr)
Other versions
WO2012024438A2 (en
Inventor
Bulent M. Basol
Original Assignee
EncoreSolar, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EncoreSolar, Inc. filed Critical EncoreSolar, Inc.
Publication of WO2012024438A2 publication Critical patent/WO2012024438A2/en
Publication of WO2012024438A3 publication Critical patent/WO2012024438A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Embodiments of the inventions provide methods and apparatus to electroplate films of tellurides such as CdTe, or its alloys on multiple large area workpieces. In one embodiment a method of forming a solar cell absorber film on multipleworkpieces uses a self adjusting mechanism taking advantage of the high resistivity of the solar cell absorber film. Larger deposits of the plating material onto one workpiece, due for example, to non-uniformity of solution flow, results in larger resistance thus decreasing the current flowing through that workpiece. The decreased current then deposits less material over that workpiece. In another embodiment multiple workpieces can be electroplated using a single power supply in a single plating bath.
PCT/US2011/048140 2010-08-17 2011-08-17 Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing WO2012024438A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40163210P 2010-08-17 2010-08-17
US61/401,632 2010-08-17

Publications (2)

Publication Number Publication Date
WO2012024438A2 WO2012024438A2 (en) 2012-02-23
WO2012024438A3 true WO2012024438A3 (en) 2014-03-20

Family

ID=45593209

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/048140 WO2012024438A2 (en) 2010-08-17 2011-08-17 Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing

Country Status (2)

Country Link
US (1) US20120043215A1 (en)
WO (1) WO2012024438A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496426B2 (en) 2012-02-10 2016-11-15 Alliance For Sustainable Energy, Llc Thin film photovoltaic devices with a minimally conductive buffer layer
US20150270423A1 (en) 2012-11-19 2015-09-24 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers
CN105590987B (en) * 2014-10-20 2022-06-14 苏州易益新能源科技有限公司 Method for horizontal electrochemical deposition of metal

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4826777A (en) * 1987-04-17 1989-05-02 The Standard Oil Company Making a photoresponsive array
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
US20090227063A1 (en) * 2008-03-08 2009-09-10 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US20090308430A1 (en) * 2005-06-17 2009-12-17 The Australian National University Solar Cell Interconnection Process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918430A (en) * 1974-07-17 1975-11-11 Harry E Stout Solar heating system and components thereof
US4666569A (en) * 1984-12-28 1987-05-19 Standard Oil Commercial Development Company Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
GB9022828D0 (en) * 1990-10-19 1990-12-05 Bp Solar Ltd Electrochemical process
GB9123684D0 (en) * 1991-11-07 1992-01-02 Bp Solar Ltd Ohmic contacts
USRE40386E1 (en) * 1998-11-06 2008-06-17 Hitachi Ltd. Chrome plated parts and chrome plating method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US4548681A (en) * 1984-02-03 1985-10-22 The Standard Oil Company (Ohio) Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te
US4826777A (en) * 1987-04-17 1989-05-02 The Standard Oil Company Making a photoresponsive array
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
US20090308430A1 (en) * 2005-06-17 2009-12-17 The Australian National University Solar Cell Interconnection Process
US20090227063A1 (en) * 2008-03-08 2009-09-10 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells

Also Published As

Publication number Publication date
WO2012024438A2 (en) 2012-02-23
US20120043215A1 (en) 2012-02-23

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