WO2012093808A2

WO2012093808A2 - Method and device for fingerprint resistant coating

Info

Publication number: WO2012093808A2
Application number: PCT/KR2011/010297
Authority: WO
Inventors: 김윤택
Original assignee: 바코스 주식회사
Priority date: 2011-01-05
Filing date: 2011-12-29
Publication date: 2012-07-12
Also published as: CN103282541A; WO2012093808A3; KR20120079717A

Abstract

The present invention relates to a method and a device for a fingerprint resistant coating having an enhanced productivity by using in combination AC plasma reform method and thermal evaporation method instead of the conventional electron beam evaporation method, and more specifically, the present invention relates to a fingerprint resistant coating method comprising: a) a step for evaporating a SiOx (x is 1.5-2.0) thin film using the AC plasma method; and b) a step for evaporating through thermal evaporation a fluorine compound on the surface of a basic material having evaporated thereon the SiOx thin film.

Description

Anti-fingerprint coating method and apparatus

The present invention relates to an anti-fingerprint surface coating method and apparatus for improving productivity by using a combination of an AC plasma reforming method and a thermal deposition method instead of the conventional electron beam deposition method. Specifically, the present invention relates to SiOx using an AC plasma method. (x is 1.5-2.0) depositing a thin film, and b) depositing a fluorine compound on the surface of the substrate on which the SiOx thin film is deposited by thermal evaporation (Thermal evaporation).

In the case of a smartphone, since the window window is used as an input means, the fingerprint of the window surface is essential. Recently, as the demand of the smartphone increases, a method of manufacturing the fingerprint surface in large quantities was needed.

The conventional anti-fingerprint coating method is based on the dome-shaped jig 6 located on the upper part of the apparatus by applying an electron beam deposition apparatus, which is mainly used for depositing dielectric material on the spectacle lens, as shown in FIG. The surface is modified using an ion beam (7) installed at a position separated from the lower center of the apparatus by attaching (1), and then the evaporation crucible (8) where silicon dioxide is located and the crucible where the fluoride compound is impregnated are placed. (9) was heated through an electron beam evaporation source 11 to deposit silicon dioxide and a fluorine compound on the surface of the substrate.

However, this method has a limitation in the amount that can be deposited at one time because the substrate is set only on the ceiling of the deposition apparatus. For example, even when a large apparatus of 2050 mm diameter is used, a glass of 60 * 120 mm size is about one time. The productivity was low enough to produce about 200 units, which needed to be improved.

Accordingly, the present invention has led to the development of an anti-fingerprint coating method and an apparatus for implementing the anti-fingerprint coating to significantly improve productivity by introducing an AC plasma and a thermal deposition method.

The present invention has been made to solve the above-described problems, and provides an anti-fingerprint coating method capable of treating a large amount of substrates at once by introducing an AC plasma and a thermal deposition method to the anti-fingerprint coating, and an apparatus for implementing the same. Its purpose is to.

In order to achieve the above object, the present invention comprises the steps of a) depositing a SiOx (x is 1.5-2.0) thin film using an AC plasma method, and b) thermal deposition on the surface of the substrate on which the SiOx thin film is deposited. It provides a fingerprint coating method comprising the step of depositing a fluorine compound through evaporation, and before depositing the SiOx thin film, further comprising the step of modifying the substrate surface by AC plasma treatment to increase the adhesion of SiOx. Can be.

At this time, the thickness of the SiOx thin film is preferably 5nm ~ 50nm, the thickness of the fluorine compound deposition layer is preferably 5nm ~ 50nm. In addition, in order to deposit a SiO x (x is 1.5-2.0) thin film by using the AC plasma method, Hexamethyl disiloxane (HMDSO) gas may be used.

On the other hand, in order to achieve the above object, the present invention is a) jig (2) located on the axis of the corotating axis for attaching the substrate (1), b) the substrate (1) attached to the jig (2) is corotated AC plasma processing device (3) for surface modification and coating SiOx, c) mixed gas supply device (4) for supplying gas to the plasma processing device (3), and d) on the jig (2). Provided is a fingerprint coating apparatus comprising a thermal evaporation apparatus (5) for depositing a fluorine compound on a substrate (1) attached and co-rotating.

In addition, the gas supplied from the mixed gas supply device 4 preferably includes HMDSO (Hexamethyl disiloxane), oxygen-containing gas and Ar gas, the jig (2) is installed on a plurality of co-rotating shaft, It is preferable that the substrates are mounted on the side of the jig 2.

Anti-fingerprint coating method of the present invention by depositing the anti-fingerprint material by using a combination of the AC plasma method and the thermal evaporation method instead of the conventional electron beam evaporation method, to produce a fingerprint surface with a productivity of several hundred% or more than conventional electron beam deposition method in the same equipment It can manufacture.

1-Conceptual view of a conventional electron beam evaporator device

Figure 2-Flow chart showing the anti-fingerprint coating method according to an embodiment of the present invention

3-conceptual diagram of an apparatus for producing a rubbing surface according to a preferred embodiment of the present invention

1: description 2: jig

3: plasma treatment device 4: mixed gas supply device

5: thermal evaporation apparatus 6: jig

7: Ion beam 8: Crucible for evaporation of silicon dioxide

9: Crucible for evaporating fluorine compound 10: Crucible rotating device

11: electron beam evaporation source

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as being limited to ordinary or dictionary meanings, but should be construed as meanings and concepts consistent with the technical spirit of the present invention.

As shown in FIG. 2, the anti-fingerprint coating method of the present invention comprises the steps of: a) depositing a SiOx (x is 1.5-2.0) thin film using an AC plasma method, and b) a surface of the substrate on which the SiOx thin film is deposited. Depositing a fluorine compound through thermal evaporation.

In addition, prior to depositing the SiOx thin film may further include the step of modifying the substrate surface by AC plasma treatment to increase the adhesion of the SiOx, deposited using the anti-fingerprint coating device to have an effective anti-fingerprint properties The thickness of the SiOx thin film is 5nm ~ 50nm, the thickness of the fluorine compound deposition layer is preferably 5nm ~ 50nm.

The present invention is characterized in that the surface modification using the AC plasma method and the fluorine compound using the SiOx deposition and the thermal deposition method are used in combination with the conventional electron beam deposition method for the fingerprint coating.

For thermal evaporation, but can be deposited within the fingerprint material, such as a fluorine compound, in the case of using the electron beam method that the film thickness control, productivity is low difficult and has a problem, the filament when SiO ₂ deposited when using the Confucius former method There is a problem that the temperature is too high and the uniformity is poor.

On the other hand, in the case of SiOx can be coated by the sputtering method, however, when the size of the substrate increases, the relative distance between the sputter target of the center portion and the corner portion of the substrate is different, there is a problem that the thickness of the thin film is different.

That is, in the case of using a glass having a width of 200 mm, a height of 300 mm, and a thickness of 0.7 mm, when the substrate is mounted on four sides, a distance of 41 mm is generated from the center of the substrate to the corner of the jig axis. In addition, if the device is configured such that the corners are spaced 60 mm from the sputter target, the center portion of the substrate is spaced 101 mm apart, so that the thickness of the silicon dioxide thin film at the corner portions and the center portion is almost two times more different.

Thus, in the present invention, the AC plasma method, which is widely known in the industry, was applied to the anti-fingerprint coating, and was used to coat SiO x (x is 1.5-2.0) thin film. For example, several tens of KHz between an oxygen-containing gas such as oxygen or N ₂ O gas and a mixed atmosphere of Ar gas and hexamethyldisilioxane (HMDSO) gas and two insulated electrodes at tens of mTorr pressure. Applying an AC voltage of several KV to the frequency produces a glow plasma between the two electrodes and allows the formation of a SiO x (x is 1.5-2.0) thin film on the surface of the substrate passing through the plasma.

Since the method can coat the thin film relatively uniformly regardless of the shape of the substrate, not only the distance difference of about 41 mm, but also the width of the substrate size is increased to 400 mm so that the distance difference is about 82 mm. Can be uniformly coated.

In the present invention, the above-described AC plasma method and thermal deposition method are used in combination, SiO ₂ is deposited by AC plasma method, and the anti-fingerprint material is deposited by a thermal vapor deposition device, which utilizes a revolving jig to maximize productivity. I was.

In addition, before forming the SiO x (x is 1.5-2.0) thin film, any one of Ar gas or oxygen or N ₂ O gas or a mixed gas atmosphere thereof may be mixed at tens of KHz between two insulated electrodes in a pressure tens of mTorr region. When applying an AC voltage of several KV to the frequency, a glow plasma is generated between the two electrodes, and the surface of the substrate passing through the plasma is subjected to plasma treatment to form an SiO x (x is 1.5-2.0) thin film formed thereafter. Adhesion can be increased.

On the other hand, the anti-fingerprint coating method, as shown in Figure 3, a) a jig (2) located on the axis of the corotating axis for attaching the substrate (1), b) a substrate attached to the jig (2) is a co-rotating substrate AC plasma processing apparatus (3) for surface modification (1) and coating SiOx, c) mixed gas supply apparatus (4) for supplying gas to the plasma processing apparatus (3), and d) the jig (2) It can be implemented by a fingerprint coating apparatus comprising a thermal evaporation apparatus 5 for depositing a fluorine compound on the substrate 1 attached to and co-rotating.

In this case, the gas supplied from the mixed gas supply device 4 may be coated with SiOx on a substrate, and may preferably include HMDSO (Hexamethyl disiloxane), oxygen-containing gas, and Ar gas. (2) is preferably installed on a plurality of axes of corotation, and the substrates are preferably mounted on the side of the jig (2).

The conventional anti-fingerprint coaching method using the electron beam deposition method has low productivity because the substrate is mounted on the upper side as shown in FIG. 1, but the present invention is provided by mounting the substrate on the side of the jig and installing the jig on various axes of revolution and rotation. In the same size deposition furnace, the number of anti-fingerprint coatings can be dramatically increased.

For example, in the case of a deposition furnace with a diameter of 1500mm and a height of 1600mm, 32 axes of rotation can be installed, and the pitch of each axis is 125mm, and a base 60mm wide can be set on four sides, and 9 stages are provided in an effective coating zone of 1080mm height. This can be installed. The amount of vapor deposition that can be deposited once the coating furnace is 40 times the same as the coating time of the conventional electron beam deposition apparatus is 32 * 4 * 9 = 1152, which is 200 pieces of electron beam evaporator having a diameter of 2050mm and 1500mm in height. It can be seen that more than five times more output.

Hereinafter, an embodiment of the anti-fingerprinting method according to the present invention. However, the scope of the present invention is not limited to the following preferred embodiments, and those skilled in the art will be able to implement various modified forms of the contents described herein within the scope of the present invention.

EXAMPLE

In the co-rotating jig of the device shown in Figure 3 after setting the commercial hardened glass (gorilla glass) of Corning Glass Co., Ltd. of 60 * 120 * 0.7t thickness 9 stages per side using 32 axes using double-sided tape (4 * 9 * 32 (1151 pieces), a low vacuum pump (not shown) was evacuated to 10 mTorr, and the jig was rotated at a revolution speed of 1 RPM.

Any one of Ar gas, oxygen, and N ₂ O gas is mixed with two atmospheres by applying an AC voltage of 4 KV at a frequency of 40 KHz for 3 minutes between two insulated electrodes in a pressure range of 20 to 30 mTorr. The glow plasma was generated and the surface of the substrate passing through the plasma was plasma treated to increase adhesion between the SiO x (x is 1.5-2.0) thin film and the substrate to be formed later. Thereafter, gas injection was stopped, and the vacuum in the furnace was exhausted to 10 mTorr, and the furnace vacuum was exhausted to 0.05 mTorr with a high vacuum pump (not shown).

Glow plasma is generated between two electrodes by applying an AC voltage of 4KV for 3 minutes at a frequency of 40KHz between two insulated electrodes in a pressure range of 20-30 mTorr with a mixed atmosphere of oxygen-containing gas, Ar gas and HMDSO gas. The SiOx (x is 1.5-2.0) thin film was deposited on the surface of the substrate passing through the plasma.

The gas was stopped and the tablets impregnated with perfluoropolyether silane PFPE-silane attached to the filament were heated and evaporated at 3V and 700A for 3 minutes using a thermal evaporator to deposit them on the surface of the substrate. On the surface of the tempered glass, SiOx was coated with 20 nm and fluorine compound was coated with 20 nm.

The contact angle of the fabricated anti-fingerprint surface showed high water repellency of 118 degrees and the friction coefficient of 0.17 showed excellent anti-fingerprint, and satisfied all reliability items of general mobile phones such as steel wool rubbing test, salt water test and buffer test.

As described above, the anti-fingerprint coating method of the present invention by depositing the anti-fingerprint material by using a combination of the AC plasma method and the thermal evaporation method instead of the conventional electron beam deposition method, hundreds of percent or more than the conventional electron beam deposition method in the same equipment The productivity can be produced by rubbing surfaces.

The present invention is not limited to the above specific embodiments and descriptions, and various modifications can be made by those skilled in the art without departing from the gist of the invention as claimed in the claims. Such variations are within the protection scope of the present invention.

Claims

a) depositing a SiOx (x is 1.5-2.0) thin film using an AC plasma method, and b) depositing a fluorine compound on the surface of the substrate on which the SiOx thin film is deposited by thermal evaporation. Anti-fingerprint coating method.
The method of claim 1,

Prior to depositing the SiOx thin film, further comprising the step of modifying the substrate surface by AC plasma treatment to increase the adhesion of SiOx.
The method according to claim 1 or 2,

Anti-fingerprint coating method characterized in that the thickness of the SiOx thin film is 5nm ~ 50nm.
The method according to claim 1 or 2,

Anti-fingerprint coating method characterized in that the thickness of the fluorine compound deposition layer is 5nm ~ 50nm.
The method according to claim 1 or 2,

Hexamethyl disiloxane (HMDSO) gas is used to deposit a SiO x (x is 1.5-2.0) thin film using the AC plasma method.
a) a jig 2 positioned on an axis of corotation for attaching the substrate 1, b) an AC plasma processing apparatus for surface modification of the substrate 1 attached to the jig 2 and co-rotating and coating SiOx; (3), c) a mixed gas supply device 4 for supplying gas to the plasma processing device 3, and d) depositing a fluorine compound on the substrate 1 attached to the jig 2 and co-rotating. Anti-fingerprint coating device comprising a thermal evaporation device (5).
The method of claim 6,

Anti-fingerprint coating device characterized in that the gas supplied from the mixed gas supply device (4) includes HMDSO (Hexamethyl disiloxane), oxygen-containing gas and argon gas.
The method of claim 6,

The anti-fingerprint coating device, characterized in that the jig (2) is installed on a plurality of axes of corotation, and the substrates are mounted on the side of the jig (2).