WO2006112994A1

WO2006112994A1 - Non-aqueous photoresist stripper that inhibits galvanic corrosion

Info

Publication number: WO2006112994A1
Application number: PCT/US2006/009389
Authority: WO
Inventors: Seiji Inaoka
Original assignee: Mallinckrodt Baker, Inc.
Priority date: 2005-04-19
Filing date: 2006-03-16
Publication date: 2006-10-26
Also published as: ZA200706296B; DK1877870T3; KR20060110712A; IL186565A0; PL1877870T3; BRPI0610852A2; CN101164016B; ATE498859T1; DE602006020125D1; PT1877870E; JP2008537182A; ES2361271T3; EP1877870B1; SG161273A1; CA2605236A1; CN101164016A; KR101088568B1; NO20075935L; JP4677030B2; TW200700549A

Abstract

Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous, non-corrosive cleaning compositions that resist galvanic corrosion when used on stacked layer structures of different types of metals at a surface of an electronic device. Such non-aqueous photoresist strippers and cleaning compositions comprise: (a) at least one polar organic solvent, (b) at least one di or polyamine having both at least one primary amine group and one or more secondary and/or tertiary amine groups, and having the formula wherein R1, R2, R4, and R5 can be independently selected from H, OH, hydroxyalkyl and aminoalkyl groups; R6and R7 are each independently H or alkyl groups, and m and n are each independently integers of 1 or larger, with the proviso that R1, R2, R4, and R5 are selected so that there is at least one primary amine group and at least one secondary or tertiary amine group in the compound, and (c) at least one corrosion inhibitor that is selected from 8-hydroxyquinoline and isomers thereof, benzotriazoles, catechol, monosaccharides, and polyhydric alcohols selected from mannitol, sorbitol, arabitol, xylitol, erythritol, alkane diols and cycloalkane diols.

Description

NON-AQUEOUS PHOTORESIST STRIPPER THAT INHIBITS GALVANIC CORROSION

FIELD OF THE INVENTION

[0001] This invention relates to methods and non-aqueous, essentially non-corrosive, cleaning compositions for cleaning microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized stacked layer structures of different types of metals at a surface on the microelectronic substrate, and the invention also relates to the use of such cleaning compositions for stripping photoresists, and cleaning residues from etch and plasma process generated organic, organometallic and inorganic compounds.

BACKGROUND TO THE INVENTION

[0002] Many photoresist strippers and residue removers have been proposed for use in the microelectronics field as downstream or back end of the manufacturing-line cleaners. In the manufacturing process a thin film of photoresist is deposited on a wafer substrate, and then circuit design is imaged on the thin film. Following baking, the unpolymerized resist is removed with a photoresist developer. The resulting image is then transferred to the underlying material, which is generally a dielectric or metal, by way of reactive plasma etch gases or chemical etchant solutions. The etch gases or chemical etchant solutions selectively attack the photoresist-unprotected area of the substrate.

[0003] Additionally, following the termination of the etching step, the resist mask must be removed from the protected area of the wafer so that the final finishing operation can take place. This can be accomplished in a plasma ashing step by the use of suitable plasma ashing gases or wet chemical strippers. Finding a suitable cleaning composition for removal of this resist mask material without adversely affecting, e.g., corroding, dissolving or dulling, the metal circuitry has also proven problematic.

[0004] As microelectronic fabrication integration levels have increased and patterned microelectonic device dimensions have decreased towards the size of atoms, it is often times beneficial to adopt a layered structure of different types of metals as a conductor in order to, among other things, provide additional mechanical strength to the conductor line structure in the microelectronic device. For example, aluminum is often used with additional layers of other metals, such as for example, copper, chromium or molybdenum. Although type of metal is changed in the construction of the device, many of other process conditions remain essentially the same, including photoresist with similar molecular structure that is used to make a circuit by patterning the surface prior to metal etch. Photoresist stripper often contains amine compounds that show superior performance to attack hardened photoresist and eventually strip photoresist from the metal surface. However, metal is also severely attacked by amines, and furthermore, if the above-mentioned layered metal structure is processed in the conventionally used photoresist cleaners/strippers as well as subsequent rinsing processes with water involvement, significant corrosion occurs. This significant corrosion generally occurs according to the following mechanism. Galvanic potential forms between different type of metals when they are electrically contact, the electrons move from one metal (that has higher tendency of ionization) to another metal (with lower ionization tendency), the former metal is ionized, dissolve into a solution, and as a result, severely corroded. [0005] For example, the addition of copper, to aluminum layers, although resulting in electromigration resistance improvements, increased the risk of specific type of corrosion mechanisms, of the Al-Cu alloy, compared to the risk of corrosion encountered with pure aluminum layers. For example during the deposition of Al-Cu alloy, a theta phase of AI₂Cu precipitates are formed, highly rich in copper, and surrounded by regions of aluminum, that have almost been completely depleted of copper. This inhomogeneity, in the aluminum based layer, can result in a galvanic cell in which the AI₂Cu precipitates behave as the cathode, while the surrounding aluminum rich regions behave as the anode. Therefore the presence of an electrolyte can then result in galvanic corrosion, or a redox reaction, in which Al will be oxidized, while the Cu is reduced. The Al³⁺ ions produced during this reaction, can be leached away during subsequent water rinses. Since this galvanic reaction is localized near the AI₂Cu precipitates, the result of this galvanic reaction is the formation of voids in the aluminum layer. The aluminum based layer, containing voids, is now less resistant to deleterious electromigration phenomena, as well as exhibiting a decrease in conductivity.

[0006] Removal of etch and/or ash residues following the plasma etch and/or ashing process for such molybdenum, copper and aluminum metalllized microelectronic structures has proved problematic. Failure to completely remove or neutralize these residues can result in the absorption of moisture and the formation of undesirable materials that can cause the afore-mentioned corrosion to the metal structures. The circuitry materials are corroded by the undesirable materials and produce discontinuances in the circuitry wiring and undesirable increases in electrical resistance.

[0007] Therefore, it is highly desirable to provide formulations as photoresist strippers that provide good stripping performance for removing photoresist as well as etching and ashing residues that has good inhibition performance for galvanic corrosion when used on stacked layer structures of different types of metals at a surface of an electronic device.

BRIEF SUMMARY OF THE INVENTION

[0008] Back end photoresist strippers and cleaning compositions of this invention are provided by non-aqueous, non-corrosive cleaning compositions that resist galvanic corrosion when used on stacked layer structures of different types of metals at a surface of an electronic device. Such nonaqueous photoresist strippers and cleaning compositions comprise: (a) at least one polar organic solvent,

(b) at least one di or polyamine having both at least one primary amine group and one or more secondary and/or tertiary amine groups, and having the formula

wherein Ri, R₂, R₄, and R₅ can be independently selected from H, OH, hydroxyalkyl and aminoalkyl groups; R₆ and R₇ are each independently H or alkyl groups, and m and n are each independently integers of 1 or larger, with the proviso that R₁, R₂, R₄, and R₅ are selected so that there is at least one primary amine group and at least one secondary or tertiary amine group in the compound, and

(c) at least one corrosion inhibitor that is selected from 8-hydroxyquinoline and isomers thereof, benzotriazoles, catechol, monosaccharides, and polyhydric alcohols selected from mannitol, sorbitol, arabitol, xylitol, erythritol,, alkane diols and cycloalkane diols. The compositions of this invention may also contain a number of other optional components. The cleaning compositions of this invention can be used over a wide range of process/operating conditions of pH and temperature, and can be used to effectively remove photoresists, post plasma etch/ash residues, sacrificial light absorbing materials and anti-reflective coatings (ARC) and hardened photoresists. [0009] The non-aqueous, essentially non-corrosive microelectronic stripper/cleaner compositions of this invention will generally comprise from about 50 to about 90 wt % or more of the organic polar solvent component, from about 5% to about 20% of the di- or poly-amine component, and a corrosion-inhibiting amount of the corrosion inhibitor polymer component, generally from about 0.1 % to about 10% of the corrosion inhibitor component. The wt percentages provided in this specification are based on the total weight of the stripping and cleaning composition.

[0010] The non-aqueous, essentially non-corrosive stripping/cleaning compositions of this invention can also optionally contain other compatible components, including but not limited to components such as chelating agents, organic hydroxyl-containing co-solvents, stabilizing and metal chelating or complexing agents, and surfactants. DETAILED DESCRIPTION OF INVENTION AND PREFERRED EMBODIMENTS

[0011] Back end photoresist strippers and cleaning compositions of this invention are provided by non-aqueous, non-corrosive cleaning compositions that resist galvanic corrosion when used on stacked layer structures of different types of metals at a surface of an electronic device. Such nonaqueous photoresist strippers and cleaning compositions comprise:

(a) at least one polar organic solvent,

R₁R₂N — -KC)_n-N]_n R₄R₅

R₇

wherein R₁, R₂, R₄, and R₅ can each independently be H, OH, hydroxyalkyl and aminoalkyl groups; R₆ and R₇ are each independently H or alkyl groups, and m and n are each independently integers of 1 or larger, with the proviso that R₁, R₂, R₄, and R₅ are selected so that there is at least one primary amine group and at least one secondary or tertiary amine group in the compound, and

(c) at least one corrosion inhibitor that is selected from 8-hydroxyquinoIine and isomers thereof, benzothazoles, catechol, monosaccharides, and polyhydric alcohols selected from mannitol, sorbitol, arabitol, xylitol, erythritol,, alkanediols and cycloaklanediols.

By "non-aqueous" it is meant that the compositions are substantially free of water and will generally only have water present as impurities from the other components, and then will generally amount to no more than about 3% by weight of the composition, and preferably less. [0012] The cleaning compositions of this invention can be used over a wide range of process/operating conditions of pH and temperature, and can be used to effectively remove photoresists, post plasma etch/ash residues, sacrificial light absorbing materials and anti-reflective coatings (ARC). Additionally, very difficult to clean samples, such as highly crosslinked or hardened photoresists are readily cleaned by the compositions of this invention. [0013] The non-aqueous, essentially non-corrosive microelectronic stripper/cleaner compositions of this invention will generally comprise from about 50 to about 90 wt% or more, preferably from about 85 to about 90 wt% or more, and most preferably about 90 wt% or more, of the organic polar solvent component; from about 5% to about 20 wt%, preferably from about 5 to about 15 wt%, and more preferably from about 10% to about 15 wt%, of the organic di- or poly- amine component, and a corrosion-inhibiting amount of the corrosion inhibitor polymer component, generally from about 0.1 to about 10 wt%, preferably from about 0.3% to about 5 wt%, and more preferably from about 0.3% to about 3%, and even more preferably about 1 wt%. The wt percentages provided in this specification are based on the total weight of the cleaning composition.

[0014] The compositions of this invention can contain one or more of any suitable organic polar solvent, preferably organic polar solvents that includes amides, sulfones, sulfoxides, saturated alcohols and the like. Such organic polar solvents include, but are not limited to, organic polar solvents such as sulfolane (tetrahydrothiopene-1 ,1 -dioxide), 3-methylsulfolane, n-propyl sulfone, dimethyl sulfoxide (DMSO), methyl sulfone, n-butyl sulfone, 3-methylsulfolane, amides such as 1-(2- hydroxyethyl) -2-pyrrolidone (HEP), dimethylpiperidone (DMPD), N-methyl-2-pyrrolidone (NMP), dimethylacetamide (DMAc), and dimethylformamide (DMF), glycols and glycol ethers, and mixtures thereof. Especially preferred as the organic polar solvent are N-methyl pyrrolidone, sulfolane, DMSO, diethylene glycol ethyl ether (carbitol), ethylene glycol, methoxy propanol and mixtures of two or more of these solvents .

[0015] The di or polyamine component is one having both at least one primary amine group and one or more secondary and/or tertiary amine groups, and having the formula

wherein R₁, R₂, R₄, and R₅ can each independently be H, OH, hydroxyalkyl or aminoalkyl groups; R₆ and R₇ are each independently H or alkyl groups , and m and n are each independently integers of 1 or larger, with the proviso that R₁, R₂, R₄, and R₅ are selected so that there is at least one primary amine group and at least one secondary or tertiary amine group in the compound. The alkyl moieties of the groups are preferably alkyl groups of 1 to 4 carbon atoms, more preferably alkyl groups of 1 or 2 carbon atoms. As example of such di- or poly-amine component include, but are not limited to (2-aminoethyl)-2-aminoethanol, diethylene triamine, triethylene tetramine and the like.

Especially preferred is (2-aminoethyl)-2-aminoethanol.

[0016] The corrosion inhibiting component may be any 8-hydroxyquinoline and isomers thereof, benzotriazoles, catechol, monosaccharides, or polyhydric alcohols selected from mannitol, sorbitol, arabitol, xylitol, erythritol, alkane diols and cycloalkane diols. Especially preferred corrosion inhibitors include 8-hydroxyquinoline and catechol.

[0017] The compositions of this invention may also optionally contain one or more of any suitable organic hydroxyl- or polyhydroxyl-containing aliphatic compounds as a co-solvent. Any suitable organic hydroxyl-containing co-solvent may be employed in the compositions of this invention. Examples of such suitable organic hydroxyl-containing co-solvents include, but are not limited to, glycerol,, 1 ,4-butane diol, 1 ,2-cyclopentanediol, 1 ,2-cyclohexanediol, and methylpentanediol, and saturated alcohols such as ethanol, propanol, butanol, hexanol, and hexafluoroisopropanol, and mixtures thereof. A co-solvent may be present in the compositions of this invention in an amount, based on the total weight of the composition, of from 0 to about 10 wt%, preferably from about 0.1 to about 10 wt%, most preferably from about 0.5 to about 5 wt%, based on the weight of the composition.

[0018] The compositions of this invention may also contain one or more of any suitable other corrosion-inhibiting agents, preferably aryl compounds containing two or more OH, OR₆, and/or

SO₂RβR₇ groups bonded directly to the aromatic ring, where R₆, R₇ and R₈ are each independently alkyl, preferably alkyl of from 1 to 6 carbon atoms, or aryl, preferably aryi of from 6 to 14 carbon atoms. As examples of such preferred corrosion-inhibiting agents there may be mentioned pyrogallol, gallic acid, resorcinol and the like. Such other corrosion-inhibiting agents may be present in an amount of from 0 to about 10 wt%, preferably from about 0.1 to about 10 wt%, most preferably from about 0.5 to about 5 wt% based on the weight of the composition.

[0019] Organic or inorganic chelating or metal complexing agents are not required, but offer substantial benefits, such as for example, improved product stability. One or more of such inorganic chelating or metal complexing agents may be employed in the compositions of this invention. Examples of suitable chelating or complexing agents include but are not limited to trans-1 ,2- cyclohexanediamine tetraacetic acid (CyDTA), ethylenediamine tetraacetic acid (EDTA), stannates, pyrophosphates, alkylidene-diphosphonic acid derivatives (e.g. ethane-1-hydroxy-1 ,1-diphosphonate), phosphonates containing ethylenediamine, diethylenetriamine or triethylenetetramine functional moieties e.g., ethylenediamine tetra(methylene phosphonic acid) (EDTMP), diethylenetriamine penta(methylene phosphonic acid), and triethylenetetramine hexa(methylene phosphonic acid), and mixtures thereof. The chelating agent will be present in the composition in an amount of from 0 to about 5 wt%, preferably from about 0.1 to about 2 wt%, based on the weight of the composition. Metal chelating or complexing agents of various phosphonates, such as ethylenediamine tetra(methylene phosphonic acid) (EDTMP) offer much improved stabilization of the cleaning compositions of the cleaning compositions of this invention containing oxidizing agents at acidic and alkaline conditions and thus are generally preferred.

[0020] The cleaning compositions optionally may also contain one or more suitable surfactants, such as for example dimethyl hexynol (Surfynol-61 ), ethoxylated tetramethyl decynediol (Surfynol-465), polytetrafluoroethylene cetoxypropylbetaine (Zonyl FSK), Zonyl FSH and the like. The surfactant will generally be present in an amount of from 0 to about 5 wt%, preferably 0.1 to about 3 wt%, based on the weight of the composition.

[0021] Example of cleaning compositions of this invention include, but are not limited to, the compositions set forth in the following Tables 1 to 3. In Tables 1 to 3 the abbreviations employed are as follows:

NMP= N-methyl pyrrolidinone

SFL= sulfolane

DMSO=dimethyl sulfoxide

CARB=carbitol

EG= ethylene glycol

GE=methoxy propanol (Glycol ether PM)

AEEA=(2-amionoethyl)-2-aminothanol

CAT= catechol

8HQ=8-hydroxyquinoIine

Table 1

Table 3

[0022] The galvanic anti-corrosion inhibiting results obtained with the cleaning compositions of this invention is illustrated by the following test. Microelectronic substrates with a triple-layer metal feature (Mo/AI/Mo) and coated with photoresist were treated in Composition No. 6 of Table 1 and also in a comparative composition where the AEEA component was replaced with 15 % monoethanolamine, i.e., a comparative composition of 84% carbitol, 15% ethanolamine and 1% 8- hydroxyquinoline. The substrates were first placed in the compositions for 5 minutes at 70 ⁰C, then removed and observed, and then the substrates were immersed in 5% diluted solutions of the respective compositions (i.e., dilutions of 5g of the composition in 95 g water) for 5 minutes at room temperature to simulate a conventional washing step in the processing of the substrates. After this second treatment, the substrates with the triple-layer features were removed from the diluted solutions, rinsed with water and observed by pictures take with a SEM. The aluminum corrosion results after each step were as follows:

Composition 6

After treatment in Composition 6 no Al corrosion After treatment in 5% solution slight Al corrosion

Comparative Composition

After treatment in Comparative Composition no Al corrosion After treatment in 5% solution severe Al corrosion

[0023] Similar corrosion inhibiting with respect to such tripe-layer metal feature substrates were also observed when Compositions 8 to 13 of Table 2 and 3 were subjected to the same testing regimen in both the Composition formulation and in 5% diluted solutions thereof and observed under an SEM. [0024] While the invention has been described herein with reference to the specific embodiments thereof, it will be appreciated that changes, modification and variations can be made without departing from the spirit and scope of the inventive concept disclosed herein. Accordingly, it is intended to embrace all such changes, modification and variations that fall with the spirit and scope of the appended claims.

Claims

I claim:

1. A non-aqueous cleaning composition for cleaning photoresist and residues from microelectronic substrates, said cleaning composition comprising: (a) at least one polar organic solvent,

(b) at least one di or polyamine having both at least one primary amine group and one or more secondary or tertiary amine groups, and having the formula

R₅

R₁R₂N — KQ₁^U R₄R₅

R₇

wherein R₁, R₂, R₄, and R₅ are each independently selected from the group consisting of H, OH, hydroxyalkyl and aminoalkyl groups; R₆ and R₇ are each independently selected from the group consisting of H or alkyl groups, and m and n are each independently integers of 1 or larger, with the proviso that R₁, R₂, R₄, and R₅ are selected so that there is at least one primary amine group and at least one secondary or tertiary amine group in the compound, and

(c) at least one corrosion inhibitor that is selected from the group consisting of 8- hydroxyquinoline and isomers thereof, benzotriazoles, catechol, monosaccharides, and polyhydric alcohols selected from mannitol, sorbitol, arabitol, xylitol, erythritol, alkane diols and cycloalkane diols.

2. A cleaning composition of claim 1 wherein the polar organic solvent component (a) comprises from about 50 to about 90% by weight of the composition, the di- or polyamine component (b) comprises from about 5% to about 20% by weight of the composition and the corrosion inhibiting component (c) is present in the composition in an amount of from about 0.1% to about 10% by weight of the composition.

3. A cleaning composition of claim 1 wherein the polar organic solvent component (a) comprises from about 85 to about 90% by weight of the composition, the di- or polyamine component (b) comprises from about 5% to about 15% by weight of the composition and the corrosion inhibiting component (c) is present in the composition in an amount of from about 0.3% to about 3% by weight of the composition.

4. A cleaning composition of claim 1 wherein the polar organic solvent component (a) is selected from the group consisting of. sulfolane, dimethyl sulfoxide, N-methyI-2-pyrrolidone, carbitol, ethylene glycol and methoxy propanol and mixtures thereof, the di- or polyamine component (b )is selected from the group consisting of 2-aminoethyl-2-aminoethanol, diethylene triamine, and Methylene tetramine, and the corrosion inhibiting component (c) is selected from 8-hydroxyquinoline and catechol.

5. A cleaning composition of claim 3 wherein the polar organic solvent component (a) is selected from the group consisting of. sulfolane, dimethyl sulfoxide, N-methyl-2-pyrroiidone, carbitol, ethylene glycol, and methoxy propanol and mixtures thereof, the the di- or polyamine component (b

)is selected from the group consisting of (2-aminoethyl)-2-aminoethanol, diethylene triamine, and triethylene tetramine, and the corrosion inhibiting component (c) is selected from 8-hydroxyquinoline and catechol.

6. A cleaning composition of claim 1 wherein the di- or poiyamine component (b) is (2- aminoethyl)-2-aminoethanol.

7. A cleaning composition of claim 5 wherein the di- or polyamine component (b) is (2- aminoethyl)-2-aminoethanol.

8. A cleaning composition of claim 7 comprising carbitol as polar organic solvent component (a) and 8-hydroxyquinoline as corrosion inhibiting component (c).

9. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist or residue from the substrate, wherein the cleaning composition comprises a composition of:

(a) at least one polar organic solvent,

R₁R₂N -KC)_n-N]_n R₄R₅

R₇ wherein R₁, R₂, R₄, and R₅ are each independently selected from the group consisting of H, OH, hydroxyalkyl and aminoalkyl groups; R₆ and R₇ are each independently selected from the group consisting of H or alkyl groups, and m and n are each independently integers of 1 or larger, with the proviso that R₁, R₂, R₄, and R₅ are selected so that there is at least one primary amine group and at least one secondary or tertiary amine group in the compound, and

(c) at least one corrosion inhibitor that is selected from the group consisting of 8- hydroxyquinoline and isomers thereof, benzotriazoles, catechol, monosaccharides, and polyhydric alcohols selected from mannitol, sorbitol, arabitol, xylitol, erythritol, alkane diols and cycloalkane diols..

10. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 9 wherein the polar organic solvent component (a) comprises from about 50 to about 90% by weight of the composition, the di- or polyamine component (b) comprises from about 5% to about 20% by weight of the composition and the corrosion inhibiting component (c) is present in the composition in an amount of from about 0.1 % to about 10% by weight of the composition.

11. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 9 wherein the polar organic solvent component (a) comprises from about 85 to about 90% by weight of the composition, the di- or polyamine component (b) comprises from about 5% to about 15% by weight of the composition and the corrosion inhibiting component (c) is present in the composition in an amount of from about 0.3% to about 3% by weight of the composition.

12. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 9, wherein the polar organic solvent component (a) is selected from the group consisting of. sulfolane, dimethyl sulfoxide, N-methyl-2-pyrrolidone, carbitol, ethylene glycol and methoxy propanol and mixtures thereof, the di- or polyamine component (b )is selected from the group consisting of 2-aminoethyl-2-aminoethanol, diethylene triamine, and triethylene tetramine, and the corrosion inhibiting component (c) is selected from 8-hydroxyquinoline and catechol.

13. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 11 wherein the polar organic solvent component (a) is selected from the group consisting of. sulfolane, dimethyl sulfoxide, N-methyl-2-pyrrolidone, carbitol, ethylene glycol, and methoxy propanol and mixtures thereof, the the di- or polyamine component (b )is selected from the group consisting of (2-aminoethyl)-2-aminoethanol, diethylene triamine, and triethylene tetramine, and the corrosion inhibiting component (c) is selected from 8-hydroxyquinoline and catechol.

14. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 9, wherein the di- or polyamine component (b) is (2-aminoethyl)-2-aminoethanol.

15. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 13, wherein the di- or polyamine component (b) is (2-aminoethyl)-2- aminoethanol.

16. A process for cleaning photoresist or residue from a microelectronic substrate according to claim 15, comprising carbitol as polar organic solvent component (a) and 8- hydroxyquinoline as corrosion inhibiting component (c).

17. A process according to claim 9 wherein the microelectronic substrate is a layered structured devise with different metals.

18. A process according to claim 13 wherein the microelectronic substrate is a layered structured device with different metals.

19. A process according to claim 14 wherein the microelectronic substrate is a layered structured device with different metals.

20. A process according to claim 16 wherein the microelectronic substrate is a layered structured device with different metals.