Nothing Special   »   [go: up one dir, main page]

WO2005012893A1 - Capteur chimique micro-structure - Google Patents

Capteur chimique micro-structure Download PDF

Info

Publication number
WO2005012893A1
WO2005012893A1 PCT/DE2004/001647 DE2004001647W WO2005012893A1 WO 2005012893 A1 WO2005012893 A1 WO 2005012893A1 DE 2004001647 W DE2004001647 W DE 2004001647W WO 2005012893 A1 WO2005012893 A1 WO 2005012893A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
idt
metallization level
chemical sensor
sensor according
Prior art date
Application number
PCT/DE2004/001647
Other languages
German (de)
English (en)
Inventor
Heribert Weber
Doris Schielein
Christian Krummel
Christoph Schelling
Original Assignee
Paragon Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10347415A external-priority patent/DE10347415A1/de
Application filed by Paragon Ag filed Critical Paragon Ag
Priority to JP2006520669A priority Critical patent/JP2006528767A/ja
Priority to US10/565,984 priority patent/US7453254B2/en
Priority to EP04762495A priority patent/EP1649271A1/fr
Publication of WO2005012893A1 publication Critical patent/WO2005012893A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid

Definitions

  • the invention relates to a chemical sensor with a first metallization level arranged on a substrate, in which an electrode structure is formed, a passivation layer applied on the first metallization level and structured by contact holes, and with one on the passivation layer and in the contact holes by means of dispensing. , Screen printing or inkjet process and subsequent sintering produced sensitive ceramic layer.
  • Electrodes in which the electrical resistance of a sensitive layer, usually comprising metal oxides, can be evaluated with the aid of an evaluation structure, the electrodes, are known in many designs, in particular as gas or moisture sensors.
  • Porous ceramic layers for example Sn0 2 or W0 3 , are generally used as sensitive layers for gas detection, the electrical surface conductivity of which changes when gases are adsorbed.
  • the porous ceramic layers can be made selectively sensitive to certain gases by means of dopants.
  • the resistivities of such ceramics are very high. This means that the measuring resistances also become large.
  • the evaluation structure therefore usually consists of an interdigital structure (IDT; "Interdigitated Transducers”), that is to say of two coplanar, interdigitated electrodes. This corresponds to a parallel connection of the resistances formed laterally between the individual fingers of different polarity and thus a reduced internal sensor resistance or an increased sensitivity of the sensor.
  • IDT Interdigitated Transducers
  • a temperature measuring resistor is often also provided on the sensor, it being possible for all elements of the metallization to be structured, for example from platinum, in one metallization level.
  • a passivation layer typically silicon oxide, is often provided on the metallization level.
  • the passivation layer is to be structured through contact holes in order to enable contact between the electrodes and the sensitive layer applied to the passivation layer.
  • a microstructured silicon membrane sensor with a sensitive layer applied to an Si0 2 , Si 3 N membrane is known, for example, from DE 197 10 358 AI.
  • the heating and temperature measurement structures are passivated by means of a silicon oxide layer, to which an interdigital, three-dimensional electrode structure is then applied, into which a sensitive layer is filled using screen printing technology.
  • the sensitive ceramic layer when it is produced by screen printing, it has to be sintered after it has been applied as a thick-layer paste. Any mechanical tensions that occur or remain, in particular interfacial tensions, can lead to the detachment of layer material and particle generation. The effects of eg Sn0 2 or W0 3 on other micromechanical processes are unclear, so that there is a general risk of contamination.
  • the porosity of the metal oxide ceramic produced during sintering is desirable on the one hand because the high sensitivity of the ceramic is due to the high surface-to-volume ratio. At the same time, however, the porosity has a negative effect on the mechanical stability of the layer. The most important requirement for stability is that the ceramic layers adhere to the substrate and the electrodes over the life of the sensor. In addition, the electrical contact between ceramic and electrodes must not degenerate.
  • the ceramic layers are currently produced directly on the passivation layers. It has been shown that the adhesion of the ceramics is often insufficient.
  • the object of the invention is to improve the situation with regard to liability.
  • the invention is based on the generic chemical sensor in that an adhesion promoter layer is provided which is designed as a second metallization level and which is arranged between the passivation layer and the ceramic layer.
  • the upper metallization applied in two layers makes it possible to better bind the porous, sensitive ceramic layers to the substrate provided by the passivation layer.
  • the metallic adhesion promoter layer arranged between two contact hole openings in the upper level leads to a strong spatial limitation of the electrical field lines, and thus also to the current paths between two interdigital electrode fingers, which ultimately strongly limits the active zone in the sensitive ceramics, which is associated with the advantage of improved protection against sensor poisoning, for example through silicone.
  • the second metallization level in particular, but not only, in connection with the sensor electrodes.
  • the adhesion promoter layer can also be used in the bond area of the sensor - if it is suitable as a bonding material.
  • the second metallization level is preferably applied in such a way that it comes to lie in the contact holes on the first metallization level.
  • a further passivation layer is arranged between the adhesion promoter layer and the ceramic layer and is structured such that the adhesion promoter layer is partially passivated.
  • two coplanar electrodes are structured in the electrode structure of the first metallization level, and that the second metallization level is not at a defined electrical potential.
  • the advantages mentioned result in the improvement of the adhesion and the narrowing of the functional ceramic zone by means of equipotential surfaces.
  • the electrode structure of the first metallization level forms a first electrode
  • the second metallization level is designed as a second electrode and is at a defined electrical potential, so that the sensitive ceramic layer is provided with a vertical electrode arrangement.
  • the lateral expansion of the ceramic layer can no longer be determined by technical requirements and can be reduced if necessary.
  • the electrodes are interdigital electrodes, but this is also possible in all other embodiments.
  • a heating structure and a temperature measurement structure are preferably formed in the first metallization level.
  • the structures of the metallization are preferably applied to the front of an Si substrate which has a membrane.
  • FIG. 1 shows a cross section of a sensor according to the invention
  • FIG. 2 in the same representation, a variant of the sensor
  • FIG. 3 in the same representation, shows a schematically simplified section of the cross section according to FIGS. 1 and 2.
  • FIG. 1 shows a silicon substrate 1 in which, for example by etching a cavity 2 from the back of the substrate 1, a dielectric membrane 3 is produced, which can consist of a layer sequence of, for example, silicon dioxide and silicon nitride.
  • a first metallization level for example made of platinum, is located above the membrane 3.
  • This metallization is structured in such a way that the heating structure 4 and the interdigital electrode fingers of different polarity IDT 1 and IDT 2, and optionally a temperature resistor 5, are formed for the chemical sensor.
  • IDT 1 and IDT 2 for example, it is advantageous to converting the burst membrane layer, here silicon nitride, into a silicon oxide layer 3 'on the surface.
  • the passivation layer 6 There are holes 7 in the passivation layer 6, which serve for contacting the ceramic layer 9 and the bondlands.
  • the adhesion promoter layer 8 which serves to promote adhesion for the ceramic layer 9, and which, as described further below in connection with FIG. 3, is optionally set to a defined potential and then as a second interdigital electrode IDT 2 can serve, in which case the first metallization level with respect to the evaluation structure has only interdigital electrode fingers IDT 1 of the same polarity.
  • the second metallization level can be applied in such a way that it comes to lie in the contact hole openings 7 on the first metallization level.
  • a further passivation layer 10 can optionally lie on the second metallization 8. It in turn contains holes for connection purposes.
  • the silicon raw wafer is first thermally oxidized.
  • An LPCVD nitride is then deposited or an oxide is produced.
  • the first metallization and its structuring into heater 4, temperature sensor 5 and interdigital electrode IDT are then deposited on the front of the wafer.
  • a passivation layer 6 is then applied, for example a CVD oxide.
  • the etching mask for the cavern etching for producing the membrane 3 is defined on the back of the wafer.
  • the sensor can be controlled more quickly due to the reduced heat dissipation.
  • the adhesion promoter layer 8 or the second metallization level for example made of the materials Au, is applied. Cr / Au, Pt, Pd, W or Sn.
  • the adhesion promoter layer 8 is subsequently structured in such a way that it only remains in the area between the interdigital electrode fingers on which the ceramic is intended to adhere afterwards and, if appropriate, still on the bondlands.
  • the contact holes 7 are then etched into the passivation layer 6 on the front of the wafer, and the adhesion promoter layer 8 can partially serve as an etching mask.
  • the application of the adhesive layer 8 and etching of the contact holes 7 can also be carried out in the reverse order.
  • a protective lacquer is applied to the front and the caverns 2 are produced from the rear by anisotropic etching.
  • the paste dot is applied and sintered in an oven to form the porous ceramic layer 9. Further details on the known process steps can be found in DE 197 10 358 AI mentioned above.
  • FIG. 3 shows to explain the function of the invention that goes beyond the improved mediation
  • a voltage is applied between the two interdigital electrodes IDT 1 and IDT 2.
  • the measurement signal is tapped as current.
  • the upper, second metallization level that is to say the structured adhesion promoter layer 8
  • both IDTs are implemented in the lower, first metallization level.
  • the current paths between the IDTs would run exclusively over the ceramic layer, as indicated in FIG. 3 by the arrow shown in broken lines.
  • the adhesion promoter layer 8 according to the invention however, they run, as shown, between the latter and the two IDTs.
  • the current path then leads outside the contact holes 7 via the adhesion promoter layer 8.
  • a change in the conductivity in the periphery of the ceramic dot or ceramic layer 9, for example due to poisoning, advantageously plays practically no role in this configuration, since the electrical field lines and thus the current paths are very limited in space.
  • the upper, second metallization level (bonding agent layer 8) is set to a defined potential (e.g. 0V), it can be used as IDT 2. In this case, the electrode spacing is effectively approximately half as large as in the case of a floating adhesive layer 8.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

La présente invention concerne un capteur présentant un premier plan de métallisation disposé sur un substrat (1), une couche de passivation (6) structurée par des trous de contact (7), appliquée sur ledit premier plan de métallisation, et une couche céramique sensible (9) produite par la technique de couche épaisse sur ladite couche de passivation et dans les trous de contact (7). L'invention a pour objet d'améliorer l'adhérence de la couche céramique (9). A cet effet, le capteur de l'invention comprend une couche d'adhésif (8) qui joue le rôle de second plan de métallisation et est disposée entre la couche de passivation (6) et la couche céramique (9).
PCT/DE2004/001647 2003-07-25 2004-07-23 Capteur chimique micro-structure WO2005012893A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006520669A JP2006528767A (ja) 2003-07-25 2004-07-23 マイクロ構造化された化学的なセンサ
US10/565,984 US7453254B2 (en) 2003-07-25 2004-07-23 Microstructured chemical sensor
EP04762495A EP1649271A1 (fr) 2003-07-25 2004-07-23 Capteur chimique micro-structure

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10333996.5 2003-07-25
DE10333996 2003-07-25
DE10347415.3 2003-10-13
DE10347415A DE10347415A1 (de) 2003-07-25 2003-10-13 Mikrostrukturierter chemischer Sensor

Publications (1)

Publication Number Publication Date
WO2005012893A1 true WO2005012893A1 (fr) 2005-02-10

Family

ID=34117370

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001647 WO2005012893A1 (fr) 2003-07-25 2004-07-23 Capteur chimique micro-structure

Country Status (4)

Country Link
EP (1) EP1649271A1 (fr)
JP (1) JP2006528767A (fr)
KR (1) KR20060055524A (fr)
WO (1) WO2005012893A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967589A (en) * 1987-12-23 1990-11-06 Ricoh Company, Ltd. Gas detecting device
DE19710358A1 (de) * 1997-03-13 1998-09-24 Bosch Gmbh Robert Mikrostrukturierter Sensor
US5840255A (en) * 1995-12-29 1998-11-24 Siemens Aktiengesellschaft Gas sensor
EP1319943A2 (fr) * 2001-12-14 2003-06-18 Stiftung Caesar Center of Advanced European Studies and Research Détecteur d'impédance pour des analytes dans des solutions liquides
WO2003095999A2 (fr) * 2002-05-11 2003-11-20 Paragon Ag Dispositif capteur destine a la mesure d'une concentration de gaz

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW347149U (en) * 1993-02-26 1998-12-01 Dow Corning Integrated circuits protected from the environment by ceramic and barrier metal layers
JP3711597B2 (ja) * 1994-10-24 2005-11-02 株式会社日本自動車部品総合研究所 空燃比検出装置
JP3836227B2 (ja) * 1997-09-01 2006-10-25 株式会社日本自動車部品総合研究所 ガス検出方法およびガス検出装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4967589A (en) * 1987-12-23 1990-11-06 Ricoh Company, Ltd. Gas detecting device
US5840255A (en) * 1995-12-29 1998-11-24 Siemens Aktiengesellschaft Gas sensor
DE19710358A1 (de) * 1997-03-13 1998-09-24 Bosch Gmbh Robert Mikrostrukturierter Sensor
EP1319943A2 (fr) * 2001-12-14 2003-06-18 Stiftung Caesar Center of Advanced European Studies and Research Détecteur d'impédance pour des analytes dans des solutions liquides
WO2003095999A2 (fr) * 2002-05-11 2003-11-20 Paragon Ag Dispositif capteur destine a la mesure d'une concentration de gaz

Also Published As

Publication number Publication date
KR20060055524A (ko) 2006-05-23
EP1649271A1 (fr) 2006-04-26
JP2006528767A (ja) 2006-12-21

Similar Documents

Publication Publication Date Title
DE3015356C2 (fr)
EP3244181B1 (fr) Procédé de fabrication d'un élément de capteur au moyen de structuration laser
EP1144968B1 (fr) Thermometre a resistance de platine et son procede de production
EP1649270A1 (fr) Capteur de gaz et procede de fabrication
WO2014072123A2 (fr) Capteur de température et procede de production d'un capteur de température
EP0793801B1 (fr) Detecteur de pression
DE10136164A1 (de) Mikromechanisches Bauelement
DE19956744C2 (de) Gassensor
DE102005001298A1 (de) Vorrichtung zum Messen von Kräften, insbesondere Drucksensor, und zugehöriges Herstellverfahren
EP1415144A2 (fr) Composite stratifie et element detecteur micromecanique, en particulier element detecteur de gaz comprenant ledit composite stratifie
DE10031976C2 (de) Hochtemperaturstoffsensor
DE4333898C2 (de) Meßfühler zur Erfassung von Gaszusammensetzungen
EP0645613B1 (fr) Méthodes de fabrication de capteurs de pression absolue à couche mince
EP1649271A1 (fr) Capteur chimique micro-structure
DE102010054970B4 (de) Vorrichtung zum Wandeln einer Dehnung und/oder Stauchung in ein elektrisches Signal, insbesondere Dehnungsmessfolie
DE102019130755A1 (de) Sensorvorrichtung, Verfahren zum Herstellen einer Sensorvorrichtung und Sensorbaugruppe
DE10347415A1 (de) Mikrostrukturierter chemischer Sensor
WO2010130370A1 (fr) Capteur à couche épaisse structuré par photolithographie
DE19751128A1 (de) Sensorelement und Verfahren zur Herstellung eines Sensorelements
DE10219254B4 (de) Mikromechanisches Bauelement mit einem Isolationsbereich und entsprechendes Herstellungsverfahren
DE10315190A1 (de) Gassensor
DE102019216113A1 (de) Keramisches Sensorelement für einen Abgassensor, Verfahren zur Herstellung und Betriebsverfahren
DE10219726A1 (de) Verfahren zur Herstellung eines brückenartigen Halbleiter-Gassensors, sowie Halbleiter-Gassensor mit Brückenstruktur
EP3513166B1 (fr) Élément capteur pour la détection de particules d'un gaz de mesure dans un espace de gaz de mesure
DE4115399C1 (en) Integrated circuit - having ion-sensitive liq. sensor and reference electrode having gold@ layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2004762495

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2006520669

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1020067001777

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2004762495

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020067001777

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 2007234801

Country of ref document: US

Ref document number: 10565984

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 10565984

Country of ref document: US