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WO2004102307A3 - Method and system for monitoring and control of a chamber process - Google Patents

Method and system for monitoring and control of a chamber process Download PDF

Info

Publication number
WO2004102307A3
WO2004102307A3 PCT/US2004/010950 US2004010950W WO2004102307A3 WO 2004102307 A3 WO2004102307 A3 WO 2004102307A3 US 2004010950 W US2004010950 W US 2004010950W WO 2004102307 A3 WO2004102307 A3 WO 2004102307A3
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
monitoring
light
control
window
Prior art date
Application number
PCT/US2004/010950
Other languages
French (fr)
Other versions
WO2004102307A2 (en
Inventor
Audunn Ludviksson
Original Assignee
Tokyo Electron Ltd
Audunn Ludviksson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Audunn Ludviksson filed Critical Tokyo Electron Ltd
Publication of WO2004102307A2 publication Critical patent/WO2004102307A2/en
Publication of WO2004102307A3 publication Critical patent/WO2004102307A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Plasma & Fusion (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A method system and computer readable medium for monitoring a process performed in a process chamber includes performing the process in the chamber, generating light in the chamber, and detecting transmission properties of the light through a window of the chamber. A status of the process is monitored based the detected transmission properties of the light through the window. The process performed in the chamber may be a conditioning, cleaning or production process for a semiconductor, and may include generating a plasma, CVD or wet etching.
PCT/US2004/010950 2003-05-06 2004-04-16 Method and system for monitoring and control of a chamber process WO2004102307A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/429,768 US20040221957A1 (en) 2003-05-06 2003-05-06 Method system and computer readable medium for monitoring the status of a chamber process
US10/429,768 2003-05-06

Publications (2)

Publication Number Publication Date
WO2004102307A2 WO2004102307A2 (en) 2004-11-25
WO2004102307A3 true WO2004102307A3 (en) 2005-08-18

Family

ID=33416117

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/010950 WO2004102307A2 (en) 2003-05-06 2004-04-16 Method and system for monitoring and control of a chamber process

Country Status (2)

Country Link
US (1) US20040221957A1 (en)
WO (1) WO2004102307A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100717974B1 (en) * 2005-02-04 2007-05-14 주식회사 에이디피엔지니어링 Plasma processing apparatus
JP2006279228A (en) * 2005-03-28 2006-10-12 Fuji Xerox Co Ltd Image pickup apparatus
US8158526B2 (en) 2006-10-30 2012-04-17 Applied Materials, Inc. Endpoint detection for photomask etching
US20080099435A1 (en) * 2006-10-30 2008-05-01 Michael Grimbergen Endpoint detection for photomask etching
JP5059792B2 (en) * 2009-01-26 2012-10-31 東京エレクトロン株式会社 Plasma processing equipment
KR101143627B1 (en) * 2009-12-30 2012-05-09 에스케이하이닉스 주식회사 Etching apparatus and method for fabricating alternating phase shift mask using the same
CN103811291B (en) 2013-12-20 2018-01-23 京东方科技集团股份有限公司 A kind of array substrate manufacturing method, film layer etching antisitic defect monitoring method and equipment
CN104752260B (en) 2013-12-31 2018-05-08 北京北方华创微电子装备有限公司 A kind of isolation window fixed structure and chamber
CN104752264B (en) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 A kind of isolation window fixed structure and chamber
TWI640039B (en) * 2014-07-03 2018-11-01 美商西凱渥資訊處理科技公司 Endpoint booster systems and methods for optical endpoint detection in wafer etch process
WO2020219208A1 (en) * 2019-04-26 2020-10-29 Applied Materials, Inc. Methods for calibrating an optical emission spectrometer
TWI759757B (en) * 2020-06-05 2022-04-01 揚明光學股份有限公司 Optical characteristic measurement device and fabrication method thereof
US12077880B2 (en) * 2021-04-28 2024-09-03 Applied Materials, Inc. In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259250A (en) * 1992-03-16 1993-10-08 Hitachi Ltd Plasma monitor device of plasma treatment apparatus
JPH0697151A (en) * 1992-09-11 1994-04-08 General Signal Japan Kk Formation of etching pattern
JPH0729882A (en) * 1993-06-25 1995-01-31 Hitachi Ltd Monitoring equipment for inside of etching chamber
US5824375A (en) * 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean
JP2000031124A (en) * 1998-07-14 2000-01-28 Matsushita Electric Ind Co Ltd Semiconductor manufacturing device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259250A (en) * 1992-03-16 1993-10-08 Hitachi Ltd Plasma monitor device of plasma treatment apparatus
JPH0697151A (en) * 1992-09-11 1994-04-08 General Signal Japan Kk Formation of etching pattern
JPH0729882A (en) * 1993-06-25 1995-01-31 Hitachi Ltd Monitoring equipment for inside of etching chamber
US5824375A (en) * 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean
JP2000031124A (en) * 1998-07-14 2000-01-28 Matsushita Electric Ind Co Ltd Semiconductor manufacturing device

Also Published As

Publication number Publication date
WO2004102307A2 (en) 2004-11-25
US20040221957A1 (en) 2004-11-11

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