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WO2002082549A1 - Semiconductor integrated circuit device and its manufacturing method - Google Patents

Semiconductor integrated circuit device and its manufacturing method Download PDF

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Publication number
WO2002082549A1
WO2002082549A1 PCT/JP2002/003172 JP0203172W WO02082549A1 WO 2002082549 A1 WO2002082549 A1 WO 2002082549A1 JP 0203172 W JP0203172 W JP 0203172W WO 02082549 A1 WO02082549 A1 WO 02082549A1
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor
film
integrated circuit
semiconductor integrated
circuit device
Prior art date
Application number
PCT/JP2002/003172
Other languages
French (fr)
Japanese (ja)
Inventor
Hiromichi Waki
Keiichi Yoshizumi
Mitsuhiro Mori
Kazufumi Suenaga
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Publication of WO2002082549A1 publication Critical patent/WO2002082549A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor integrated circuit device in which the quality of a capacitor insulating ferroelectric film of an FeRAM does not degraded and the characteristics of the FeRAM is improved. A PZT film containing Pb of a content more than that of a capacitor insulating film (11a) (PZT film) constituting a capacitor (C) of the FeRAM memory cell is deposited on the capacitor (C) and subjected to an anisotropic etching so as to form a side wall film (SW) on the side wall of the capacitor (C). As a result, for example, the adverse influence of the hydrogen and H2O in a TEOS film on the capacitor (C) can be weakened, and the degradation of the characteristics of the capacitor insulating film (11a) can be suppressed.
PCT/JP2002/003172 2001-04-05 2002-03-29 Semiconductor integrated circuit device and its manufacturing method WO2002082549A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-107011 2001-04-05
JP2001107011A JP2002305289A (en) 2001-04-05 2001-04-05 Semiconductor integrated circuit device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
WO2002082549A1 true WO2002082549A1 (en) 2002-10-17

Family

ID=18959409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/003172 WO2002082549A1 (en) 2001-04-05 2002-03-29 Semiconductor integrated circuit device and its manufacturing method

Country Status (2)

Country Link
JP (1) JP2002305289A (en)
WO (1) WO2002082549A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004214544A (en) * 2003-01-08 2004-07-29 Fujitsu Ltd Method for manufacturing semiconductor device
JP4663216B2 (en) * 2003-06-10 2011-04-06 ルネサスエレクトロニクス株式会社 Semiconductor memory device and manufacturing method thereof
JP2005057103A (en) * 2003-08-06 2005-03-03 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP4579236B2 (en) 2004-02-19 2010-11-10 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP4803995B2 (en) * 2004-06-28 2011-10-26 富士通セミコンダクター株式会社 Semiconductor device and manufacturing method thereof
JP2007013011A (en) * 2005-07-01 2007-01-18 Seiko Epson Corp Ferroelectric memory device and display driving IC
JP4661572B2 (en) * 2005-12-12 2011-03-30 セイコーエプソン株式会社 Ferroelectric memory and manufacturing method of ferroelectric memory
JP4515492B2 (en) * 2007-08-29 2010-07-28 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
JP6539900B2 (en) * 2013-07-25 2019-07-10 国立研究開発法人産業技術総合研究所 Ferroelectric device and method of manufacturing the same
JP6821291B2 (en) * 2015-05-29 2021-01-27 キヤノン株式会社 Manufacturing method of photoelectric conversion device, imaging system and photoelectric conversion device
JP6751866B2 (en) 2016-04-22 2020-09-09 国立研究開発法人産業技術総合研究所 Manufacturing method of semiconductor ferroelectric storage element and semiconductor ferroelectric storage transistor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523595A (en) * 1990-08-21 1996-06-04 Ramtron International Corporation Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film
WO1997035341A1 (en) * 1996-03-15 1997-09-25 Hitachi, Ltd. Semiconductor storage device and its manufacture
JPH11103029A (en) * 1997-09-29 1999-04-13 Nec Corp Capacitor, semiconductor memory device therewith, and manufacture thereof
EP0911871A2 (en) * 1997-10-24 1999-04-28 Sharp Kabushiki Kaisha Semiconductor memory device with ferroelectric thin film
EP0951058A2 (en) * 1998-04-17 1999-10-20 Symetrix Corporation Method of fabricating ferroelectric integrated circuit using dry and wet etching
JP2000004001A (en) * 1998-06-15 2000-01-07 Toshiba Corp Semiconductor memory and manufacture thereof
EP0978881A2 (en) * 1998-08-07 2000-02-09 Matsushita Electronics Corporation Ferroelectric capacitor and its manufacturing method
JP2000260956A (en) * 1999-03-10 2000-09-22 Oki Electric Ind Co Ltd Capacitance element and its manufacture, and semiconductor storage element and its manufacture

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523595A (en) * 1990-08-21 1996-06-04 Ramtron International Corporation Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film
WO1997035341A1 (en) * 1996-03-15 1997-09-25 Hitachi, Ltd. Semiconductor storage device and its manufacture
JPH11103029A (en) * 1997-09-29 1999-04-13 Nec Corp Capacitor, semiconductor memory device therewith, and manufacture thereof
EP0911871A2 (en) * 1997-10-24 1999-04-28 Sharp Kabushiki Kaisha Semiconductor memory device with ferroelectric thin film
EP0951058A2 (en) * 1998-04-17 1999-10-20 Symetrix Corporation Method of fabricating ferroelectric integrated circuit using dry and wet etching
JP2000004001A (en) * 1998-06-15 2000-01-07 Toshiba Corp Semiconductor memory and manufacture thereof
EP0978881A2 (en) * 1998-08-07 2000-02-09 Matsushita Electronics Corporation Ferroelectric capacitor and its manufacturing method
JP2000260956A (en) * 1999-03-10 2000-09-22 Oki Electric Ind Co Ltd Capacitance element and its manufacture, and semiconductor storage element and its manufacture

Also Published As

Publication number Publication date
JP2002305289A (en) 2002-10-18

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