WO1993024962A1 - Process for the purification of electrolyte components - Google Patents
Process for the purification of electrolyte components Download PDFInfo
- Publication number
- WO1993024962A1 WO1993024962A1 PCT/GB1993/000946 GB9300946W WO9324962A1 WO 1993024962 A1 WO1993024962 A1 WO 1993024962A1 GB 9300946 W GB9300946 W GB 9300946W WO 9324962 A1 WO9324962 A1 WO 9324962A1
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- WO
- WIPO (PCT)
- Prior art keywords
- metal powder
- solution
- metal
- iib
- group iib
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000003792 electrolyte Substances 0.000 title claims abstract description 12
- 238000000746 purification Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000000843 powder Substances 0.000 claims abstract description 43
- 239000000243 solution Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 238000004070 electrodeposition Methods 0.000 claims abstract description 14
- 150000003839 salts Chemical class 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 3
- 150000002500 ions Chemical class 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 238000001914 filtration Methods 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical group [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims 1
- 239000012266 salt solution Substances 0.000 claims 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 229940021013 electrolyte solution Drugs 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 229910000369 cadmium(II) sulfate Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
Definitions
- the present invention relates to the production of thin film IIB VIB semiconductor materials by electrodeposition.
- Thin film IIB/VIB semiconductors are of value in the fabrication of photovoltaic cells.
- the production of thin film IIB/VIB semiconductors, e.g. CdTe, by electrodeposition is disclosed in numerous references.
- Panicker et al J. Electrochem Soc. 125. No. 4 pp 556-572, and US 4425 194.
- the use of electrodeposited thin film IIB/VIB semiconductors in the fabrication of photovoltaic cells is also disclosed in numerous references.
- a method of preparing an aqueous solution of a Group IIB metal salt suitable for use in the electrodeposition of a IIB/VIB thin film semiconductor which comprises: (a) bringing a solution of the Group IIB metal salt into contact with the corresponding IIB metal in the form of a powder of high purity, preferably greater than 99.99%, (b) agitating the solution containing the metal powder for sufficient time to extract the impurities, and (c) removing the metal powder from solution.
- a method of preparing an electrodeposited thin film IIB/VIB semiconductor by cathodic deposition from an electrolyte containing ions of the Group IIB metal characterised in that the electrolyte is prepared from a solution of a Group IIB salt which has been brought into contact with the corresponding Group IIB metal in powder form for a time sufficient to extract the impurities, conveniently at least 10 minutes followed by removal of the Group IIB metal powder from the solution.
- references to Group IIB and VIB are references to the Periodic Table of the Elements. There are various forms of the Periodic Table which differ in the way in which the letters A and B are used to to identify sub-Groups.
- references to the Periodic Table in this specification are references to the Periodic Table as given in “Advanced Inorganic Chemistry” , Cotton & Wilkinson, 4th Edition, in which Group IIB includes the elements Cd, Zn, and Hg, and Group VIB includes the main group elements of Group VI, e.g. 0, S, Se, and Te.
- the Group IIB metal is preferably cadmium.
- the Group IIB salt used in the preparation of the electrolyte bath is preferably CdS ⁇ 4. The greater the size of the particles of metal powder the less will be the surface area per unit weight. Preferably the maximum size of the metal powder is 300 microns.
- the minimum particle size will depend on the effectiveness of the filtration step.
- the metal powder is substantially free of particles with a size below 0.2 micrometres. More preferably the metal powder is substantially free of particles with a size belowlO microns.
- the metal powder may conveniently be a metal powder, substantially all of which passes a 100 mesh British Standard sieve and is collected by a 200 mesh British Standard sieve.
- a mesh of 100 corresponds to a spacing between the mesh elements of 250 micrometres and a mesh size of 200 corresponds to 130 micrometers.
- the concentration of the Group IIB salt in the aqueous solution may be in the range 0.01M to 3M, but is conveniently 2M.
- the temperature of the solution during the process of treatment may, for example, be in the range 0-80°C, but is conveniently around room temperature (18°-25°C) .
- the purity of the Group IIB metal powder is at least 99.99%, more preferably at least 99.999%. Metals of this purity are available commercially in powder form
- the duration of contact between the metal powder and the aqueous solution may, for example, be in the range 10 minutes to 2 hours.
- the Group IIB metal powder is then removed from the solution. This may be carried out by filtering the solution or allowing the metal powder to settle and then decant off the liquid. here it is desired to separate by filtration, this may be carried out using a fine mesh filter which contains no impurities which will effect the purity of the electrolyte. It is convenient to use a polymer filter such as polypropylene with a maximum pore size of 0.1 micrometres.
- the metal powder used is fresh metal powder.
- electrodeposition of IIB/VIB thin film semiconductors is well known and there is no need to describe it in detail. Thus electrodeposition processes are disclosed in GB 1 532 616. In order to reduce the impurity level to the minimum it may be desirable to separate the anode from the electrolyte bath from which the semiconductor is deposited by a cation/exchange polymer membrane as disclosed in our co-pending European application EP-A-0538041.
- a photovoltaic cell was prepared by conventional methods from glass coated with tin oxide on which a layer of CdS had been deposited. The method is disclosed in N R Pavaskar, C A Menzes, ABP Sinha, J Electrochemical Soc. 124 (1967) page 743. The glass sheet with the layer of CdS was used as the cathode in an electrodeposition process for depositing CdTe.
- the aqueous electrodeposition bath contained 0.9M Cd introduced as CdS04, 600 ppm Cl " , 50 ppm of Te introduced as Te ⁇ 2-
- the electrodeposition step was carried out at 70°C.
- the CdS0 was not subjected to any pre-treatment but was used as supplied.
- Photovoltaic cells were formed from the resulting glass/tin oxide/CdS/CdTe structure after heating to convert the CdTe to p-type material as disclosed in USP 4388483, 2 mm ⁇ gold dot contacts were then applied by thermal evaporation following an etch as described in USP 4456630.
- a photovoltaic cell was prepared as in Comparative Test A, except that the electrolyte bath was prepared from a CdS0 aqueous solution which had been treated as set out below.
- Cd powder was added to the CdSO ⁇ . solution with mechanical stirring at the rate of 1 g of Cd powder to 1 litre of CdS0 solution.
- the Cd powder had a purity of 99.999%.
- the powder passed a 100-mesh sieve but was collected by a 200-mesh sieve (British Standard sieve) .
- the solution and powder are agitated together at room temperature for 20 minutes.
- the solution was then filtered through a 0.1 micrometre polypropylene filter to remove the Cd powder.
- the resulting filtered solution was treated a second time as above with Cd powder and filtered.
- Table 2 The results for the photovoltaic cell prepared as in Example 1 are given in Table 2.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electrolytic Production Of Metals (AREA)
- Weting (AREA)
Abstract
A method of preparing an aqueous solution of a Group IIB metal salt suitable for use in the electrodeposition of a IIB/VIB thin film semiconductor which comprises (a) bringing a solution of the Group IIB metal salt into contact with the corresponding IIB metal in the form of a powder with a purity greater than 99.99 %; (b) agitating the solution containing the powder for at least 10 minutes; and (c) removing the metal powder from the solution. A method of preparing an electrodeposited thin film IIB/VIB semiconductor by cathodic deposition from an electrolyte containing ions of Group II metal, is also claimed.
Description
PROCESS FOR THE PURIFICATION OF ELECTROLYTE COMPONENTS The present invention relates to the production of thin film IIB VIB semiconductor materials by electrodeposition.
Thin film IIB/VIB semiconductors are of value in the fabrication of photovoltaic cells. The production of thin film IIB/VIB semiconductors, e.g. CdTe, by electrodeposition is disclosed in numerous references. For example, Panicker et al, J. Electrochem Soc. 125. No. 4 pp 556-572, and US 4425 194. The use of electrodeposited thin film IIB/VIB semiconductors in the fabrication of photovoltaic cells is also disclosed in numerous references.
We have found that when preparing photovoltaic devices based on IIB/VIB thin film semiconductors formed by electrodeposition that the best performance is obtained when the impurity content is controlled at very low levels. The commercially available chemicals used to make the electrolyte solution in electrodeposition baths for depositing IIB/VIB semiconductors normally contain relatively high levels of certain metallic impurities. Certain electrochemically active impurities, i.e. those whose standard electrochemical reduction potential is less cathodic than cadmium, in the electrolyte will show significant concentration during the electrodeposition process. In other words, the concentration in the electrodeposited material is higher than that in the solution.
There is a need for a method of purifying electrolyte solutions used in the electrodeposition of IIB/VIB semiconductors.
According to the present invention a method of preparing an aqueous solution of a Group IIB metal salt suitable for use in the electrodeposition of a IIB/VIB thin film semiconductor which comprises: (a) bringing a solution of the Group IIB metal salt into contact with the corresponding IIB metal in the form of a powder of high purity, preferably greater than 99.99%, (b) agitating the solution containing the metal powder for sufficient time to extract the impurities, and (c) removing the metal powder from solution.
According to a further aspect of the present invention a method of preparing an electrodeposited thin film IIB/VIB semiconductor by cathodic deposition from an electrolyte containing ions of the Group IIB metal characterised in that the electrolyte is prepared from a solution of a Group IIB salt which has been brought into contact with the corresponding Group IIB metal in powder form for a time sufficient to extract the impurities, conveniently at least 10 minutes followed by removal of the Group IIB metal powder from the solution. In this specification references to Group IIB and VIB are references to the Periodic Table of the Elements. There are various forms of the Periodic Table which differ in the way in which the letters A and B are used to to identify sub-Groups. References to the Periodic Table in this specification are references to the Periodic Table as given in "Advanced Inorganic Chemistry" , Cotton & Wilkinson, 4th Edition, in which Group IIB includes the elements Cd, Zn, and Hg, and Group VIB includes the main group elements of Group VI, e.g. 0, S, Se, and Te.
The Group IIB metal is preferably cadmium. The Group IIB salt used in the preparation of the electrolyte bath is preferably CdSθ4. The greater the size of the particles of metal powder the less will be the surface area per unit weight. Preferably the maximum size of the metal powder is 300 microns.
The minimum particle size will depend on the effectiveness of the filtration step. Preferably the metal powder is substantially
free of particles with a size below 0.2 micrometres. More preferably the metal powder is substantially free of particles with a size belowlO microns.
The metal powder may conveniently be a metal powder, substantially all of which passes a 100 mesh British Standard sieve and is collected by a 200 mesh British Standard sieve. A mesh of 100 corresponds to a spacing between the mesh elements of 250 micrometres and a mesh size of 200 corresponds to 130 micrometers.
The concentration of the Group IIB salt in the aqueous solution may be in the range 0.01M to 3M, but is conveniently 2M. The temperature of the solution during the process of treatment may, for example, be in the range 0-80°C, but is conveniently around room temperature (18°-25°C) .
The purity of the Group IIB metal powder is at least 99.99%, more preferably at least 99.999%. Metals of this purity are available commercially in powder form
The duration of contact between the metal powder and the aqueous solution may, for example, be in the range 10 minutes to 2 hours. The Group IIB metal powder is then removed from the solution. This may be carried out by filtering the solution or allowing the metal powder to settle and then decant off the liquid. here it is desired to separate by filtration, this may be carried out using a fine mesh filter which contains no impurities which will effect the purity of the electrolyte. It is convenient to use a polymer filter such as polypropylene with a maximum pore size of 0.1 micrometres.
It may be desirable to repeat the steps of bringing the solution into contact with the Group IIB metal powder and the separation step. Preferably, the metal powder used is fresh metal powder.
The electrodeposition of IIB/VIB thin film semiconductors is well known and there is no need to describe it in detail. Thus electrodeposition processes are disclosed in GB 1 532 616. In order to reduce the impurity level to the minimum it may be desirable to separate the anode from the electrolyte bath from which the
semiconductor is deposited by a cation/exchange polymer membrane as disclosed in our co-pending European application EP-A-0538041.
The production of photovoltaic cells by depositing a IIB/VIB thin film semiconductor on a cathode covered with a thin film of CdS is well known and does not need to be described in detail here. It will generally be necessary to heat the deposited film of IIB/VIB semiconductor to convert it to a p-type semiconductor. Such a process is disclosed in US 4 388 483. A contact may then be deposited on the IIB/VIB thin film by various well known methods. The invention will now be described with reference to the following examples in which comparative tests, not according to the invention, are identified by letters, and examples of the invention are identified by numbers. Comparative Test A A photovoltaic cell was prepared by conventional methods from glass coated with tin oxide on which a layer of CdS had been deposited. The method is disclosed in N R Pavaskar, C A Menzes, ABP Sinha, J Electrochemical Soc. 124 (1967) page 743. The glass sheet with the layer of CdS was used as the cathode in an electrodeposition process for depositing CdTe.
The aqueous electrodeposition bath contained 0.9M Cd introduced as CdS04, 600 ppm Cl", 50 ppm of Te introduced as Teθ2- The electrodeposition step was carried out at 70°C.
The CdS0 was not subjected to any pre-treatment but was used as supplied.
Photovoltaic cells were formed from the resulting glass/tin oxide/CdS/CdTe structure after heating to convert the CdTe to p-type material as disclosed in USP 4388483, 2 mm^ gold dot contacts were then applied by thermal evaporation following an etch as described in USP 4456630.
The resulting photovoltaic cell was tested under standard test conditions and the characteristics at three different regions of the sheet identified as strips A, B and C each covering a third of the plate were determined. The results are given in Table 1.
TABLE 1
Example 1
A photovoltaic cell was prepared as in Comparative Test A, except that the electrolyte bath was prepared from a CdS0 aqueous solution which had been treated as set out below. Cd powder was added to the CdSOή. solution with mechanical stirring at the rate of 1 g of Cd powder to 1 litre of CdS0 solution. The Cd powder had a purity of 99.999%. The powder passed a 100-mesh sieve but was collected by a 200-mesh sieve (British Standard sieve) . The solution and powder are agitated together at room temperature for 20 minutes. The solution was then filtered through a 0.1 micrometre polypropylene filter to remove the Cd powder. The resulting filtered solution was treated a second time as above with Cd powder and filtered. The results for the photovoltaic cell prepared as in Example 1 are given in Table 2.
TABLE 2
Claims
1. A method of preparing an aqueous solution of a Group IIB metal salt suitable for use in the electrodeposition of a IIB/VIB thin film semiconductor which comprises:
(a) bringing a solution of the Group IIB metal salt into contact with the corresponding IIB metal in the form of a high purity powder, agitating the solution containing the metal powder for sufficient time to extract the impurities, and (c) removing the metal powder from solution.
2. A method of preparing an electrodeposited thin film IIB/VIB semiconductor by cathodic deposition from an electrolyte containing ions of the Group IIB metal characterised in that the electrolyte is prepared from a solution of a Group IIB salt which has been brought into contact with the corresponding Group IIB metal in powder form for a time sufficient to extract the impurities followed by removal of the Group IIB metal powder from the solution.
3. A method according to either of the preceding claims wherein the Group IIB metal is cadmium.
4. A method according to Claim 2 wherein the Group IIB metal salt is cadmium sulphate.
5. A method according to any one of the preceding claims wherein metal powder is substantially free of particles with a size below 0.2 micrometres.
6. A method according to Claim 5 wherein the metal powder is substantially free of particles with a particle size below 10 micrometres.
7. A method according to any one of the preceding claims wherein the metal powder is substantially free of particles with a particle size above 300 micrometres.
8. A method according to any one of the preceding claims wherein the concentration of the Group IIB salt is in the range 0.01M to 3M.
9. A method according to any one of the preceding claims wherein the temperature is in the range 0-80* C.
10. A method according to claim 9 wherein the temperature is in the range 18° to 25".
11. A method according to any one of the preceding claims wherein the metal powder is at least 99.999% pure.
12. A method according to any one of the preceding claims wherein the metal powder is removed from the solution by filtration.
13. A method according to claim 12 wherein the metal powder is removed by filtration through a polymer filter with a maximum pore size of 0.1 micrometres.
14. A method according to any one of the preceding claims which comprises bringing the Group IIB salt solution after removal of the metal powder into contact with fresh metal powder, agitating, and separating the metal powder as claimed in any one of Claims 1 to 12.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9210945.3 | 1992-05-22 | ||
| GB929210945A GB9210945D0 (en) | 1992-05-22 | 1992-05-22 | Chemical process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1993024962A1 true WO1993024962A1 (en) | 1993-12-09 |
Family
ID=10715903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/GB1993/000946 WO1993024962A1 (en) | 1992-05-22 | 1993-05-07 | Process for the purification of electrolyte components |
Country Status (5)
| Country | Link |
|---|---|
| CN (1) | CN1082633A (en) |
| AU (1) | AU4077793A (en) |
| GB (1) | GB9210945D0 (en) |
| MX (1) | MX9303008A (en) |
| WO (1) | WO1993024962A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| US4400244A (en) * | 1976-06-08 | 1983-08-23 | Monosolar, Inc. | Photo-voltaic power generating means and methods |
| US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
-
1992
- 1992-05-22 GB GB929210945A patent/GB9210945D0/en active Pending
-
1993
- 1993-05-07 WO PCT/GB1993/000946 patent/WO1993024962A1/en active Application Filing
- 1993-05-07 AU AU40777/93A patent/AU4077793A/en not_active Abandoned
- 1993-05-21 MX MX9303008A patent/MX9303008A/en unknown
- 1993-05-21 CN CN93106085A patent/CN1082633A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400244A (en) * | 1976-06-08 | 1983-08-23 | Monosolar, Inc. | Photo-voltaic power generating means and methods |
| US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
| US4465565A (en) * | 1983-03-28 | 1984-08-14 | Ford Aerospace & Communications Corporation | CdTe passivation of HgCdTe by electrochemical deposition |
Non-Patent Citations (3)
| Title |
|---|
| JOURNAL OF PHYSICS D. APPLIED PHYSICS vol. 19, no. 5, May 1986, LETCHWORTH GB pages 917 - 923 R.K. PANDEY ET AL. 'Efficient electrochemical photovoltaic cells using n-CdSe films electrodeposited from low-purity materials' * |
| JOURNAL OF THE ELECTROCHEMICAL SOCIETY vol. 125, no. 4, April 1978, MANCHESTER, NEW HAMPSHIRE US pages 566 - 572 M.P.R. PANICKER ET AL. 'Cathodic deposition of CdTe from aqueous electrolytes' cited in the application * |
| SOLAR CELLS. vol. 23, no. 1-2, February 1988, LAUSANNE CH pages 69 - 88 B.M. BASOL 'Electrodeposited CdTe and HgCdTe solar cells' * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1082633A (en) | 1994-02-23 |
| GB9210945D0 (en) | 1992-07-08 |
| MX9303008A (en) | 1993-11-01 |
| AU4077793A (en) | 1993-12-30 |
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