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US7821771B2 - Apparatus for storing electrical energy - Google Patents

Apparatus for storing electrical energy Download PDF

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Publication number
US7821771B2
US7821771B2 US12/101,309 US10130908A US7821771B2 US 7821771 B2 US7821771 B2 US 7821771B2 US 10130908 A US10130908 A US 10130908A US 7821771 B2 US7821771 B2 US 7821771B2
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Prior art keywords
magnetic
magnetic layer
layer
electrical energy
dipoles
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Expired - Fee Related, expires
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US12/101,309
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US20090257150A1 (en
Inventor
James Chyi Lai
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Northern Lights Semiconductor Corp
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Northern Lights Semiconductor Corp
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Assigned to NORTHERN LIGHTS SEMICONDUCTOR CORP. reassignment NORTHERN LIGHTS SEMICONDUCTOR CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LAI, JAMES CHYI
Priority to US12/101,309 priority Critical patent/US7821771B2/en
Priority to US12/409,004 priority patent/US20090257168A1/en
Priority to TW098111557A priority patent/TW200943336A/en
Priority to EP09157661.1A priority patent/EP2109123B1/en
Priority to KR1020090030648A priority patent/KR101108582B1/en
Priority to CN2009101341604A priority patent/CN101557125B/en
Priority to JP2009097113A priority patent/JP2009260353A/en
Publication of US20090257150A1 publication Critical patent/US20090257150A1/en
Publication of US7821771B2 publication Critical patent/US7821771B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains

Definitions

  • the present invention relates to an apparatus for storing electrical energy. More particularly, the present invention relates to a magnetic capacitor for storing electrical energy.
  • Energy storage parts play important roles in our daily life since they influence the performance and the working time of electrical devices.
  • Components such as capacitors used in the circuits and batteries used in portable devices are the most common energy storage parts.
  • the Giant Magnetoresistance Effect is a quantum mechanical effect observed in structures with alternating thin magnetic and thin nonmagnetic sections.
  • the GMR effect shows a significant change in electrical resistance from the zero-field high resistance state to the high-field low resistance state according to an applied external field.
  • a magnetic capacitor is an example of the apparatus with the GMR effect.
  • Magnetic capacitors are formed with magnetic plates.
  • a magnetic plate has a north pole and a south pole, and the north pole and south pole have the strongest magnetic field along the magnetic plate.
  • the magnetic field strength is summarized and combined with all magnetic dipoles along easy axis.
  • FIG. 1A shows localized dipoles of magnetic plates in a magnetic capacitor.
  • the magnetic capacitor includes a first magnetic plate 110 , a second magnetic plate 120 , and a dielectric layer 130 .
  • the first magnetic plate 110 and the second magnetic plate 120 have dipoles pointing in the same directions.
  • FIG. 1B shows a magnetic plate and the magnetic field contour of the magnetic plate showing the field strength intensity.
  • the density of the magnetic field lines in the magnetic field contour represents the magnetic field strength.
  • the magnetic field strength decreases from two sides of the magnet plate. Due to the magnetic field effect, magnetic capacitors have shown colossal capacitance. Therefore the colossal magnetic effect is reduced from the edge to the center of the magnet plate.
  • the need to store more capacitance in a limited area is rising.
  • the apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer.
  • the first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer.
  • the dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus.
  • the first magnetic layer includes a first magnetic section having magnetic dipoles with horizontal directions and a second magnetic section having magnetic dipoles with vertical directions
  • the second magnetic layer includes a third magnetic section having magnetic dipoles with horizontal directions and a forth magnetic section having magnetic dipoles with vertical directions.
  • FIG. 1A shows localized dipoles of magnetic plates in a magnetic capacitor
  • FIG. 1B illustrates a magnetic plate and the magnetic field contour of the magnetic plate showing the field strength intensity
  • FIG. 2A shows an apparatus for storing electrical energy according to an embodiment of the invention
  • FIG. 2B shows localized dipoles of an apparatus for storing electrical energy according to an embodiment of the invention
  • FIG. 3 shows a magnetic capacitor with nano magnets along the inner side of the capacitor plates
  • FIG. 4 shows the apparatus while the apparatus is being charged according to an embodiment of the invention
  • FIG. 5 shows the apparatus while the apparatus is being discharged according to an embodiment of the invention.
  • FIG. 6 shows the apparatus after the apparatus is charged according to an embodiment of the invention.
  • the apparatus for storing electrical energy is a magnetic capacitor.
  • the magnetic capacitor includes a first magnetic layer 210 , a second magnetic layer 220 , and a dielectric layer 230 .
  • the first magnetic layer 210 has a first surface 215 with saw tooth roughness;
  • the second magnetic layer 220 has a second surface 225 with saw tooth roughness;
  • the dielectric layer 230 is configured between the first magnetic layer 210 and the second magnetic layer 220 .
  • the dielectric layer 230 is arranged to store electrical energy; the first magnetic layer 210 and the second magnetic layer 220 are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface 215 and the second surface 225 increases the surface area of the first surface 215 and the second surface 225 , and thus increases the capacitance of the magnetic capacitor.
  • the dielectric layer 230 is a thin film, and the dielectric layer 230 is composed of dielectric material, such as BaTiO 3 or TiO 3 . However, the dielectric material is not a perfect insulator. A small amount of current passes through the dielectric layer 230 .
  • the first magnetic layer 210 and the second magnetic layer 220 are needed to generate the insulating-effect to prevent the current from passing through (i.e. electrical energy leakage).
  • the first and second magnetic layers 210 and 220 are magnetic thin films, and these two magnetic layers are used to prevent electrical energy leakage.
  • the first magnetic layer 210 includes a first magnetic section 212 having magnetic dipoles with horizontal directions and a second magnetic section 214 having magnetic dipoles with vertical directions
  • the second magnetic layer 220 includes a third magnetic section 222 having magnetic dipoles with horizontal directions and a forth magnetic section 224 having magnetic dipoles with vertical directions.
  • the magnetic dipoles of the first magnetic section 212 and the third magnetic section 222 have the same horizontal directions.
  • the dipoles of the first magnetic section 212 and the third magnetic section 222 are the same. Therefore, the first magnetic section 212 and the third magnetic section 222 prevent electrical energy leakage, and electrical energy can be stored in the dielectric layer 230 .
  • the spin directions of the electrons of the dielectric layer 230 point toward one direction.
  • the current leakage is reduced thereby.
  • the energy is stored for a longer period of time and there is less loss of electrical energy.
  • the symbols ‘ ⁇ ’ are just arranged to represent the dipoles of the magnetic sections, and are not arranged to restrict the dipole directions.
  • FIG. 3 showing a magnetic capacitor with nano magnets along the inner side of the capacitor plates.
  • the saw tooth roughness of the magnetic capacitor shown in FIG. 2A has the effect of building up nano magnets 315 and 325 along the inner side of the magnetic plates 310 and 320 shown here.
  • a dielectric layer 330 is configured in between the magnetic plates 310 and 320 .
  • the north poles and south poles along the magnetic plates have the strongest magnetic field, and the colossal magnetic effect is reduced from the edge of magnetic plates to the center.
  • the nano magneto effect created by nano magnets 315 and 325 can complement this weakness of magnetic capacitors.
  • the magnetic field strength of the magnetic capacitor has increased due to the magnetic dipoles with vertical directions.
  • FIG. 4 shows the apparatus while the apparatus is being charged according to an embodiment of the invention. While the apparatus is being charged, the first magnetic layer 210 and the second magnetic layer 220 are coupled to a power source 460 . The electrical energy can be inputted into the dielectric layer 230 from the power source 460 .
  • FIG. 5 shows the apparatus while the apparatus is being discharged according to an embodiment of the invention. While the apparatus is being discharged, the first magnetic layer 210 and the second magnetic layer 220 are coupled to a loading device 570 . The electrical energy can be outputted from the dielectric layer 230 to the loading device 570 .
  • the power source or the loading device can influence the dipoles of the magnetic layers 210 and 220 easily, and the insulating-effect of the magnetic layers 210 and 220 is not good thereby. Therefore the current can be transmitted through the magnetic sections.
  • FIG. 6 shows the apparatus after the apparatus is charged according to an embodiment of the invention.
  • electrodes When electrodes are applied on both sides of the magnetic capacitor, it will generate electric dipoles on the first surface 215 of the first magnetic layer 210 and the second surface 225 of the second magnetic layer 220 as well.
  • the capacitance will increase in the order of magnitude not only due to the increase of the capacitor area but also due to the increases of magnetic field strength.
  • the invention provides an apparatus for storing electrical energy with large capacitance values because of the saw tooth roughness structure of the apparatus.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

An apparatus for storing electrical energy is provided. The apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus.

Description

BACKGROUND
1. Field of Invention
The present invention relates to an apparatus for storing electrical energy. More particularly, the present invention relates to a magnetic capacitor for storing electrical energy.
2. Description of Related Art
Energy storage parts play important roles in our daily life since they influence the performance and the working time of electrical devices. Components such as capacitors used in the circuits and batteries used in portable devices are the most common energy storage parts.
The Giant Magnetoresistance Effect (GMR) is a quantum mechanical effect observed in structures with alternating thin magnetic and thin nonmagnetic sections. The GMR effect shows a significant change in electrical resistance from the zero-field high resistance state to the high-field low resistance state according to an applied external field.
Therefore, the GMR effect can be used to as an insulator with good performance. Thus, the apparatus with the GMR effect can be implemented to store electrical energy. A magnetic capacitor is an example of the apparatus with the GMR effect. Magnetic capacitors are formed with magnetic plates. A magnetic plate has a north pole and a south pole, and the north pole and south pole have the strongest magnetic field along the magnetic plate. In reality, the magnetic field strength is summarized and combined with all magnetic dipoles along easy axis. Please refer to FIG. 1A FIG. 1A shows localized dipoles of magnetic plates in a magnetic capacitor. The magnetic capacitor includes a first magnetic plate 110, a second magnetic plate 120, and a dielectric layer 130. The first magnetic plate 110 and the second magnetic plate 120 have dipoles pointing in the same directions.
Refer to FIG. 1B. FIG. 1B shows a magnetic plate and the magnetic field contour of the magnetic plate showing the field strength intensity. The density of the magnetic field lines in the magnetic field contour represents the magnetic field strength. As shown in FIG. 1B, the magnetic field strength decreases from two sides of the magnet plate. Due to the magnetic field effect, magnetic capacitors have shown colossal capacitance. Therefore the colossal magnetic effect is reduced from the edge to the center of the magnet plate. However, as the sizes of electrical devices continue to shrink, the need to store more capacitance in a limited area is rising.
For the foregoing reasons, there is a need to have an apparatus with the GMR effect and large capacitance values to store electrical energy.
SUMMARY
It is therefore an objective of the present invention to provide an apparatus for storing electrical energy with large capacitance values.
According to one embodiment of the present invention, the apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus.
The first magnetic layer includes a first magnetic section having magnetic dipoles with horizontal directions and a second magnetic section having magnetic dipoles with vertical directions, and the second magnetic layer includes a third magnetic section having magnetic dipoles with horizontal directions and a forth magnetic section having magnetic dipoles with vertical directions.
It is to be understood that both the foregoing general description and the following detailed description are by examples, and are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
These and other features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings where:
FIG. 1A shows localized dipoles of magnetic plates in a magnetic capacitor;
FIG. 1B illustrates a magnetic plate and the magnetic field contour of the magnetic plate showing the field strength intensity;
FIG. 2A shows an apparatus for storing electrical energy according to an embodiment of the invention;
FIG. 2B shows localized dipoles of an apparatus for storing electrical energy according to an embodiment of the invention;
FIG. 3 shows a magnetic capacitor with nano magnets along the inner side of the capacitor plates;
FIG. 4 shows the apparatus while the apparatus is being charged according to an embodiment of the invention;
FIG. 5 shows the apparatus while the apparatus is being discharged according to an embodiment of the invention; and
FIG. 6 shows the apparatus after the apparatus is charged according to an embodiment of the invention.
 DESCRIPTION OF THE PREFERRED EMBODIMENTS
Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
Reference is now made to FIG. 2A, showing an apparatus for storing electrical energy according to an embodiment of the invention. The apparatus for storing electrical energy is a magnetic capacitor. The magnetic capacitor includes a first magnetic layer 210, a second magnetic layer 220, and a dielectric layer 230. The first magnetic layer 210 has a first surface 215 with saw tooth roughness; the second magnetic layer 220 has a second surface 225 with saw tooth roughness; and the dielectric layer 230 is configured between the first magnetic layer 210 and the second magnetic layer 220. The dielectric layer 230 is arranged to store electrical energy; the first magnetic layer 210 and the second magnetic layer 220 are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface 215 and the second surface 225 increases the surface area of the first surface 215 and the second surface 225, and thus increases the capacitance of the magnetic capacitor.
The dielectric layer 230 is a thin film, and the dielectric layer 230 is composed of dielectric material, such as BaTiO3 or TiO3. However, the dielectric material is not a perfect insulator. A small amount of current passes through the dielectric layer 230.
Therefore, the first magnetic layer 210 and the second magnetic layer 220 are needed to generate the insulating-effect to prevent the current from passing through (i.e. electrical energy leakage). The first and second magnetic layers 210 and 220 are magnetic thin films, and these two magnetic layers are used to prevent electrical energy leakage.
Reference is now made to FIG. 2B, showing localized dipoles of an apparatus for storing electrical energy according to an embodiment of the invention. The first magnetic layer 210 includes a first magnetic section 212 having magnetic dipoles with horizontal directions and a second magnetic section 214 having magnetic dipoles with vertical directions, and the second magnetic layer 220 includes a third magnetic section 222 having magnetic dipoles with horizontal directions and a forth magnetic section 224 having magnetic dipoles with vertical directions. When the apparatus stores electrical energy, the magnetic dipoles of the first magnetic section 212 and the third magnetic section 222 have the same horizontal directions.
When the apparatus stores electrical energy, the dipoles of the first magnetic section 212 and the third magnetic section 222 are the same. Therefore, the first magnetic section 212 and the third magnetic section 222 prevent electrical energy leakage, and electrical energy can be stored in the dielectric layer 230.
Namely, when the dipoles of the first magnetic section 212 and the third magnetic section 222 are the same, the spin directions of the electrons of the dielectric layer 230 point toward one direction. The current leakage is reduced thereby. When the current leakage is reduced, the energy is stored for a longer period of time and there is less loss of electrical energy. It is noted that the symbols ‘→’ are just arranged to represent the dipoles of the magnetic sections, and are not arranged to restrict the dipole directions.
Reference is now made to FIG. 3, showing a magnetic capacitor with nano magnets along the inner side of the capacitor plates. The saw tooth roughness of the magnetic capacitor shown in FIG. 2A has the effect of building up nano magnets 315 and 325 along the inner side of the magnetic plates 310 and 320 shown here. A dielectric layer 330 is configured in between the magnetic plates 310 and 320. Without the existence of nano magnets 315 and 325, the north poles and south poles along the magnetic plates have the strongest magnetic field, and the colossal magnetic effect is reduced from the edge of magnetic plates to the center. The nano magneto effect created by nano magnets 315 and 325 can complement this weakness of magnetic capacitors. Thus, the magnetic field strength of the magnetic capacitor has increased due to the magnetic dipoles with vertical directions.
FIG. 4 shows the apparatus while the apparatus is being charged according to an embodiment of the invention. While the apparatus is being charged, the first magnetic layer 210 and the second magnetic layer 220 are coupled to a power source 460. The electrical energy can be inputted into the dielectric layer 230 from the power source 460.
FIG. 5 shows the apparatus while the apparatus is being discharged according to an embodiment of the invention. While the apparatus is being discharged, the first magnetic layer 210 and the second magnetic layer 220 are coupled to a loading device 570. The electrical energy can be outputted from the dielectric layer 230 to the loading device 570.
The power source or the loading device can influence the dipoles of the magnetic layers 210 and 220 easily, and the insulating-effect of the magnetic layers 210 and 220 is not good thereby. Therefore the current can be transmitted through the magnetic sections.
FIG. 6 shows the apparatus after the apparatus is charged according to an embodiment of the invention. When electrodes are applied on both sides of the magnetic capacitor, it will generate electric dipoles on the first surface 215 of the first magnetic layer 210 and the second surface 225 of the second magnetic layer 220 as well. The capacitance will increase in the order of magnitude not only due to the increase of the capacitor area but also due to the increases of magnetic field strength.
In conclusion, the invention provides an apparatus for storing electrical energy with large capacitance values because of the saw tooth roughness structure of the apparatus.
It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.

Claims (11)

1. An apparatus for storing electrical energy, comprising:
a first magnetic layer having a first surface with saw tooth roughness;
a second magnetic layer having a second surface with saw tooth roughness;
a dielectric layer configured between the first magnetic layer and the second magnetic layer;
wherein the dielectric layer is arranged to store electrical energy, the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage, and the saw tooth roughness on the first surface and the second surface is designed to increase capacitance of the apparatus;
wherein the first magnetic layer comprises a first magnetic section having a plurality of magnetic dipoles with horizontal directions and a second magnetic section having a plurality of magnetic dipoles with vertical directions, and the second magnetic layer comprises a third magnetic section having a plurality of magnetic dipoles with horizontal directions and a forth magnetic section having a plurality of magnetic dipoles with vertical directions.
2. The apparatus of claim 1, wherein when the apparatus stores electrical energy, magnetic dipoles of the first magnetic section and the third magnetic section have the same horizontal directions.
3. The apparatus of claim 1, wherein a magnetic field strength of the apparatus increases due to magnetic dipoles with vertical directions.
4. The apparatus of claim 1, wherein the dielectric layer is a thin film.
5. The apparatus of claim 1, wherein the dielectric layer is composed of dielectric material.
6. The apparatus of claim 1, wherein the first magnetic layer is a magnetic thin film.
7. The apparatus of claim 1, wherein the second magnetic layer is a magnetic thin film.
8. The apparatus of claim 1, wherein the saw tooth roughness increases a surface area of the first surface.
9. The apparatus of claim 1, wherein the saw tooth roughness increases a surface area of the second surface.
10. The apparatus of claim 1, wherein while the apparatus is being charged, the first magnetic layer and the second magnetic layer are coupled to a power source.
11. The apparatus of claim 1, wherein while the apparatus is being discharged, the first magnetic layer and the second magnetic layer are coupled to a loading device.
US12/101,309 2008-04-11 2008-04-11 Apparatus for storing electrical energy Expired - Fee Related US7821771B2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US12/101,309 US7821771B2 (en) 2008-04-11 2008-04-11 Apparatus for storing electrical energy
US12/409,004 US20090257168A1 (en) 2008-04-11 2009-03-23 Apparatus for Storing Electrical Energy
TW098111557A TW200943336A (en) 2008-04-11 2009-04-07 Apparatus for storing electrical energy
EP09157661.1A EP2109123B1 (en) 2008-04-11 2009-04-08 Apparatus for storing electrical energy
KR1020090030648A KR101108582B1 (en) 2008-04-11 2009-04-09 Apparatus for storing electrical energy
CN2009101341604A CN101557125B (en) 2008-04-11 2009-04-10 Apparatus for storing electrical energy
JP2009097113A JP2009260353A (en) 2008-04-11 2009-04-13 Apparatus for storing electric energy

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US20090257168A1 (en) * 2008-04-11 2009-10-15 Northern Lights Semiconductor Corp. Apparatus for Storing Electrical Energy
US20100142116A1 (en) * 2008-12-04 2010-06-10 Samsung Electro-Mechanics Co., Ltd. Capacitor
US20100214718A1 (en) * 2009-02-24 2010-08-26 Chia-Fu Yeh Magnetic capacitor
US20110242726A1 (en) * 2010-04-01 2011-10-06 Chien-Chiang Chan Energy storage device
US20130148262A1 (en) * 2010-06-10 2013-06-13 Kanji Shimizu Electrical energy storage device
US20130308248A1 (en) * 2012-05-07 2013-11-21 The University of Iowa Research Fundation Magnetically modified manganese dioxide electrodes for asymmetric supercapacitors
US20150179345A1 (en) * 2012-05-24 2015-06-25 The Board Of Trustees Of The University Of Alabama For And On Behalf Of The University Of Alabama Magnetic Supercapacitors
US20150371777A1 (en) * 2014-06-23 2015-12-24 Industrial Technology Research Institute Magnetic capacitor structures
US20150380162A1 (en) * 2010-10-20 2015-12-31 Chun-Yen Chang High Energy Density and Low Leakage Electronic Devices
US9263189B2 (en) 2013-04-23 2016-02-16 Alexander Mikhailovich Shukh Magnetic capacitor
US9589726B2 (en) 2013-10-01 2017-03-07 E1023 Corporation Magnetically enhanced energy storage systems and methods

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US20100193906A1 (en) * 2009-02-05 2010-08-05 Northern Lights Semiconductor Corp. Integrated Circuit Package for Magnetic Capacitor
US9142354B2 (en) * 2010-10-20 2015-09-22 Chun-Yen Chang High energy density and low leakage electronic devices
CN103887064B (en) * 2014-04-04 2017-04-26 西北核技术研究所 Magnetic force compression joint type plate steepening capacitor
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CN106847505A (en) * 2017-01-17 2017-06-13 国华自然科学研究院（深圳）有限公司 The preparation method of apparatus for storing electrical energy
US10825827B2 (en) * 2018-07-05 2020-11-03 Sandisk Technologies Llc Non-volatile memory with pool capacitor
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US20090257168A1 (en) * 2008-04-11 2009-10-15 Northern Lights Semiconductor Corp. Apparatus for Storing Electrical Energy
US20100142116A1 (en) * 2008-12-04 2010-06-10 Samsung Electro-Mechanics Co., Ltd. Capacitor
US20100214718A1 (en) * 2009-02-24 2010-08-26 Chia-Fu Yeh Magnetic capacitor
US20110242726A1 (en) * 2010-04-01 2011-10-06 Chien-Chiang Chan Energy storage device
US20130148262A1 (en) * 2010-06-10 2013-06-13 Kanji Shimizu Electrical energy storage device
US20150380162A1 (en) * 2010-10-20 2015-12-31 Chun-Yen Chang High Energy Density and Low Leakage Electronic Devices
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