US7441299B2 - Apparatuses and methods for cleaning a substrate - Google Patents
Apparatuses and methods for cleaning a substrate Download PDFInfo
- Publication number
- US7441299B2 US7441299B2 US10/816,337 US81633704A US7441299B2 US 7441299 B2 US7441299 B2 US 7441299B2 US 81633704 A US81633704 A US 81633704A US 7441299 B2 US7441299 B2 US 7441299B2
- Authority
- US
- United States
- Prior art keywords
- brush
- substrate
- enclosure
- length
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 238000004140 cleaning Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title abstract description 17
- 239000006260 foam Substances 0.000 claims abstract description 85
- 239000007788 liquid Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 11
- 239000002033 PVDF binder Substances 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 8
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- -1 polyoxymethylene Polymers 0.000 claims description 4
- 229930040373 Paraformaldehyde Natural products 0.000 claims description 3
- 229920006324 polyoxymethylene Polymers 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 239000002245 particle Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 229910001868 water Inorganic materials 0.000 description 12
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 11
- 239000008367 deionised water Substances 0.000 description 10
- 229910021641 deionized water Inorganic materials 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 230000008707 rearrangement Effects 0.000 description 3
- 238000005201 scrubbing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 229920004943 Delrin® Polymers 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/003—Cleaning involving contact with foam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- the present invention relates to semiconductor manufacturing and, more particularly, to apparatuses and methods for use in processing a substrate.
- substrate e.g., semiconductor wafer
- patterning of layer materials includes the application of an organic photoresist onto the semiconductor wafer. After plasma chemistry etches a target material, the semiconductor wafer needs to be cleaned to remove the organic photoresist. If the organic photoresist is not removed, the organic photoresist will contaminate the semiconductor wafer resulting in damage to the electronic devices on the semiconductor wafer. In addition, after a chemical mechanical polishing (CMP) operation, residual particles or films are left on the surface of the semiconductor wafer.
- CMP chemical mechanical polishing
- these residual particles or films may cause defects such as scratches on the wafer surface which may cause devices on the wafer to become inoperable.
- the wafer also needs to be cleaned after the CMP operation. As such, cleaning operations define a very critical step that is repeated many times throughout the process of fabricating semiconductor devices.
- FIG. 1 is a simplified side view of a conventional system used to clean semiconductor wafers.
- the cleaning system includes two brushes 110 configured to receive semiconductor wafer 112 between the brushes.
- Foam 114 is supplied to the surface of semiconductor wafer 112 and brushes 110 rotate to scrub the surface of the semiconductor wafer to remove particles and film.
- the problem with applying foam 114 in an open environment is that the foam haphazardly grows around brushes 110 and cannot be directed to a particular surface area of semiconductor wafer 112 . In other words, the flow of foam 114 is difficult to control when applied in an open environment.
- different properties of foam 114 result in different cleaning capabilities, and the properties of foam 114 are also difficult to control when applied in the open environment.
- the application of foam 114 in the open environment is also wasteful as a large quantity of the foam is needed to insure a uniform distribution across the surface of semiconductor wafer 112 .
- the present invention fills these needs by providing apparatuses and methods for cleaning a substrate. It should be appreciated that the present invention can be implemented in numerous ways, including as a process, an apparatus, a system, computer readable media, or a device. Several inventive embodiments of the present invention are described below.
- an apparatus for use in processing a substrate includes a brush enclosure extending over a length.
- the brush enclosure is configured to be disposed over a surface of the substrate and has an open region that is configured to be disposed in proximity to the substrate.
- the open region extends over the length of the brush enclosure and enables foam from within the brush enclosure to contact the surface of the substrate.
- a brush enclosure for use in processing a substrate.
- the brush enclosure includes an elongated enclosure configured to enclose a brush.
- the elongated enclosure is configured to be disposed above a surface of the substrate and has opposite ends that defines a length.
- the elongated enclosure has an open region along the length of the elongated enclosure. The open region is configured to be disposed above the surface of the substrate and enables a surface of the brush to make contact with the surface of the substrate.
- a substrate cleaning system in accordance with a third aspect of the present invention, includes a first brush enclosure and a first brush partially enclosed within the first brush enclosure.
- the first partially enclosed brush is configured to be disposed above a surface of a substrate.
- the system includes a first drive roller and a second drive roller whereby the first and second drive rollers are configured to receive an edge of the substrate to support and rotate the substrate when placed below the first partially enclosed brush.
- a method for cleaning a substrate is provided.
- foam is provided to a surface of the substrate.
- the surface of the substrate is scrubbed with a brush.
- Pressure is then provided to the foam and the pressured foam is channeled to produce jammed foam. Brush scrubbing the surface of the substrate and channeling the pressured foam across the surface of the substrate facilitate particles to be removed from the surface of the substrate.
- FIG. 1 is a simplified side view of a conventional system used to clean semiconductor wafers.
- FIG. 2A is a perspective view of a brush partially enclosed within a brush enclosure, in accordance with one embodiment of the present invention.
- FIG. 2B is a side view of the brush and the brush enclosure shown in FIG. 2A , in accordance with one embodiment of the present invention.
- FIG. 3 is a perspective view of a substrate cleaning system, in accordance with one embodiment of the present invention.
- FIG. 4 is a side view of a partially enclosed brush with foam, in accordance with one embodiment of the present invention.
- FIG. 5A is a magnified side view of the gap region shown in FIG. 4 , in accordance with one embodiment of the present invention.
- FIG. 5B is an alternative embodiment of the gap region shown in FIG. 5A .
- FIG. 6 is a flowchart diagram of the method operations for cleaning a substrate, in accordance with one embodiment of the present invention.
- the embodiments described herein provide a brush enclosure to enclose a brush and foam.
- the brush enclosure is configured to contain and to control the flow and physical properties of foam.
- the geometry of the brush enclosure creates different cleaning effects within the brush enclosure.
- FIG. 2A is a perspective view of brush 210 partially enclosed within brush enclosure 212 , in accordance with one embodiment of the present invention.
- brush enclosure 212 includes a cutout section in reference area 220 that shows brush 210 is partially enclosed within the brush enclosure.
- Brush 210 rotates to dislodge particles and to sweep the particles away from the surface of a substrate.
- Brush enclosure 212 may be configured to enclose any suitable brush 210 used in processing the substrate.
- an exemplary brush 210 has a spline geometry that includes a series of parallel, continuous raised strips at right angles to the curved brush surface.
- Another exemplary suitable brush 210 has a knobby geometry that includes a set of cylinders raised at right angles to the curved brush surface.
- Brush enclosure 212 is an elongated member that extends over length 218 . As shown in FIG. 2A , length 218 of brush enclosure 212 extends a length of brush 210 . However, in another embodiment, length 218 of brush enclosure 212 may be shorter or longer than the length of brush 210 . FIG. 2A shows brush enclosure 212 having a tubular shape, in accordance with one embodiment of the present invention.
- brush enclosure 212 may not necessarily have a “tubular” shape, but may be any suitable configuration, shape and/or size such as, for example, elongated members with rectangular cross sections, elliptical cross sections, triangular cross sections, circular cross sections, etc., as long as the brush enclosure may be configured in a manner that would enable brush 210 to be partially enclosed.
- brush enclosure 212 also includes open region 222 and, in one embodiment, additionally includes two opposing flanges 214 that extend along length and side of open region 222 .
- Brush enclosure 212 is comprised of a chemically inert material.
- exemplary chemically inert materials include plastic, DELRINTM (polyoxymethylene) polyvinylidene fluoride (PVDF), polyethylene terepthalate (PET), etc.
- brush enclosure 212 also includes open region 222 and, in one embodiment, additionally includes two opposing flanges 214 that extend along length and side of open region 222 .
- Brush enclosure 212 is comprised of a chemically inert material.
- exemplary chemically inert materials include plastic, Delrin, polyvinylidene fluoride (PVDF), polyethylene terepthalate (PET), etc.
- FIG. 2B is a side view of brush 210 and brush enclosure 212 shown in FIG. 2A , in accordance with one embodiment of the present invention.
- brush 210 that is partially enclosed within brush enclosure 212 is disposed above substrate 216 .
- brush enclosure 212 includes open region 222 and two opposing flanges 214 .
- Open region 222 is configured to be disposed in proximity to a surface of substrate 216 and allows a surface of brush 210 to make contact with the surface of the substrate.
- open region 222 extends along complete length of brush enclosure 212 .
- length of open region 222 is less than the length of brush enclosure 212 .
- flanges 214 extend radially outward from an outer surface of brush enclosure 212 .
- Each flange 214 extends along the length and along a side of open region 222 . In one embodiment, each flange 214 extends along the complete length of open region 222 . In another embodiment, the length of each flange 214 is less than the length of open region 222 .
- Each flange 214 defines a surface that is substantially parallel to the surface of substrate 216 . As used herein, the term “substantially” means that the angle between the surface of each flange 214 and surface of substrate 216 vary from about 0 degrees to about ⁇ 45 degrees.
- brush enclosure 212 includes two flanges 214 on opposite ends. However, in another embodiment, brush enclosure 212 may have one flange 214 instead of two flanges.
- FIG. 3 is a perspective view of a substrate cleaning system, in accordance with one embodiment of the present invention.
- substrate cleaning system includes two brushes 210 partially enclosed in brush enclosures 212 , two drive rollers 310 , and substrate 216 .
- Drive rollers 310 receive an edge of substrate 216 to support and rotate the substrate.
- Partially enclosed brushes 210 are oriented relative to each other such that substrate 216 is received between the brushes.
- FIG. 3 shows the use of two partially enclosed brushes 210 to clean substrate 216 .
- one partially enclosed brush 210 may be used to clean substrate 216 .
- the substrate cleaning system includes two brushes 210 , but with one brush partially enclosed in brush enclosure 212 and the second brush not enclosed within the brush enclosure.
- each brush 210 is made of a high-porosity foam such as polyvinyl alcohol (PVA) and can be used as foam generator and foam applicator.
- PVA polyvinyl alcohol
- To generate foam within brush enclosures 212 gases and liquids are supplied through conduits 312 under pressure to brushes 210 . The gases and liquids mix within the porous PVA brushes 210 in such a manner to generate foam.
- pre-generated foam is supplied through conduits 312 to brushes 210 .
- drive rollers 310 rotate substrate 216 .
- brushes 210 can move across the surface of substrate 216 to spread foam.
- Foam may additionally be spread by a combination of rotating substrate 216 and moving brushes 210 across the surface of the substrate.
- FIG. 4 is a side view of partially enclosed brush 210 with foam 410 , in accordance with one embodiment of the present invention.
- brush 210 is disposed above substrate 216 and brush enclosure 212 partially encloses the brush and foam 410 .
- the enclosure of brush 210 and foam 410 creates different zones 412 , 414 , and 416 of cleaning the surface of substrate 216 .
- Zone A 412 the surface of brush 210 contacts the surface of substrate 216 .
- the brush physically scrubs the surface of substrate 216 to remove particles.
- the surface of substrate 216 is cleaned by scrubbing.
- the surface of substrate 216 is primarily cleaned by chemical treatment with foam 410 .
- Open region 222 of brush enclosure 212 allows foam 410 from within the brush enclosure to contact the surface of substrate 216 .
- foam 410 is comprised of liquids and bubbles of gases. When bubbles within foam 410 rupture on the surface of substrate 216 , the rupture releases gases and the gases and liquids are placed in direct contact with surface of substrate 216 . A chemical reaction between the gases, liquids, and surface of substrate 216 occurs thereby facilitating removal of particles and layer of material (e.g., organic material layer) from the surface of the substrate.
- the gas is preferably a gas or any combination of gases that will chemically react or will facilitate a chemical reaction when placed in direct contact with another material.
- gases that react with contamination include ozone (O 3 ), oxygen (O 2 ), hydrochloric acid (HCl) and hydrofluoric acid (HF), and non-reactive gasses such as nitrogen (N 2 ) and argon (Ar).
- the gas may also include any combination of gases such as: ozone (O 3 ) and nitrogen (N 2 ); ozone (O 3 ) and argon (Ar); ozone (O 3 ), oxygen (O 2 ) and nitrogen (N 2 ); ozone (O 3 ), oxygen (O 2 ) and argon (Ar); ozone (O 3 ), oxygen (O 2 ), nitrogen (N 2 ) and argon (Ar); oxygen (O 2 ) and argon (Ar); oxygen (O 2 ) and nitrogen (N 2 ); and oxygen (O 2 ), argon (Ar) and nitrogen (N 2 ).
- gases such as: ozone (O 3 ) and nitrogen (N 2 ); ozone (O 3 ) and argon (Ar); ozone (O 3 ), oxygen (O 2 ), nitrogen (N 2 ) and argon (Ar); ozone (O 3 ), oxygen (O 2 ), nitrogen (N 2 ) and argon (Ar
- An embodiment of the present invention uses ozone as gas because ozone, when combined with water, chemically reacts with an organic material on the surface of substrate 216 .
- the organic material may be an organic photoresist material, which is commonly used in semiconductor photolithography operations. Nitrogen can be combined with ozone to increase the concentration of ozone in the bubbles.
- the liquid used to generate foam 410 is a liquid or any combination of liquids that will chemically react or will facilitate a chemical reaction when placed in direct contact with another material.
- the liquid may be a semi-aqueous or aqueous solution of deionized water (DIW) containing suitable cleaning fluids.
- suitable cleaning fluids include water (H 2 O); deionized water (DIW); water (H 2 O) and cleaning fluid; water (H 2 O) and surfactant; water (H 2 O), cleaning fluid, and surfactant; deionized water (DIW) and surfactant; and deionized water (DIW), cleaning fluid and surfactant.
- an embodiment of the present invention uses water as the liquid because water enables or facilitates the chemical reaction between ozone and an organic photoresist material.
- foam generation and cleaning substrate 216 using foam 410 reference may be made to a U.S. patent application Ser. No. 10/608,871 entitled “Method and Apparatus for Removing a Target Layer from a Substrate Using Reactive Gases,” which is herein incorporated by reference.
- the surface of substrate 216 is primarily cleaned by the attraction of particles to the gas/liquid interfaces of bubbles.
- the space between the surface of each flange 214 and surface of substrate 216 defines gap 224 .
- Gap 224 is maintained to induce a non-Newtonian flow field.
- dimension of gap 224 ranges from about 0.1 mm to about 5 mm.
- the term “about” means that the specified dimension or parameter may be varied within an acceptable manufacturing tolerance for a given application. In one embodiment, the acceptable manufacturing tolerance is ⁇ 10%.
- Jammed foam is produced by the application of force to compress foam 410 .
- gap 224 When compressed within gap 224 , the bubbles within foam 410 deform in shape and rearrange into a more closely packed configuration. In effect, the pressure and geometry of gap 224 causes foam 410 to change from a meta-stable position to a more stable position within Zone C 416 .
- shear force is created locally between the bubbles of jammed foam.
- the shear force causes the bubbles to move locally with relationship to each other.
- the local movements of bubbles caused by the shear force release bursts of energy, and this energy is transferred to the surface of substrate 216 to facilitate the removal of particles from the surface of the substrate.
- the bubbles within the jammed foam want to be at a minimum energy state, where all the angles between the bubbles are approximately 120 degrees.
- shear force causes a bubble at a minimum energy state to pass over another bubble, the angles between the bubbles change, and the change of angle results in a higher energy state. In effect, a change of angles between bubbles equates to a change of energy.
- brush enclosure 212 may additionally include removing conduits 450 located within flanges 214 , in accordance with one embodiment of the present invention.
- Removing conduits 450 are configured to remove foam 410 , liquid, particles, etc. from surface of substrate 216 by applying vacuum.
- conduits 450 could also be configured to provide deionized water (DIW) and/or chemical rinse to facilitate foam removal.
- additional conduits 450 may supply an additional chemical and/or gas, such as isopropyl alcohol (IPA), to reduce the surface tension of liquids on the surface of water as a means of removing the liquid from the surface of substrate 216 .
- IPA isopropyl alcohol
- FIGS. 5A and 5B are magnified side views of the gap region shown in FIG. 4 , in accordance with one embodiment of the present invention.
- gap region shows brush 210 disposed above substrate 216 partially enclosed within brush enclosure 212 .
- Brush enclosure 212 includes flange 214 and the space between the surface of the flange and surface of substrate 216 defines gap 224 .
- Different gap 224 geometries may be used to manipulate the mechanical properties and dimensions of foam 410 and the bubbles within the foam.
- the combination of changing the mechanical properties and chemical properties of foam 410 provides cleaning process flexibility by changing in-situ properties of the foam for different cleaning requirements. For instance, as shown in FIG.
- gap 224 results in small bubbles within the gap. Since gap 224 is small, pressure within brush enclosure 212 is large and, as a result, foam 410 exits gap 224 at a high velocity. The combination of smaller bubble size and high foam viscosity increases the shearing force between the bubbles. Higher shearing force results in larger energy transferred to surface of substrate 216 when bubbles within jammed foam locally rearrange.
- a larger gap 224 results in larger bubbles within the gap. Since gap 224 is large, pressure within brush enclosure 212 is less and, as a result, foam 410 exits the gap at a lower velocity. The combination of larger bubble size and lower viscosity facilitates the removal of particles from vias and trenches. Since different gap geometries create different cleaning properties, the two flanges on opposite sides of brush enclosure 212 may be configured to have different geometries, in accordance with one embodiment of the present invention.
- one flange 214 may be configured to have a small gap to create a higher shear force while the opposite flange 214 on the same brush enclosure 212 may be configured to have a larger gap to remove particles from vias and trenches.
- brush enclosure 212 may be configured to satisfy two different cleaning requirements.
- FIG. 6 is a flowchart diagram of the method operations for cleaning a substrate, in accordance with one embodiment of the present invention.
- foam is provided to a surface of the substrate.
- the surface of the substrate is physically scrubbed by the brush in operation 612 .
- the surface of the substrate is primarily cleaned by chemical treatment with foam in operation 613 .
- the chemical treatment facilitates the removal of particles and films from the surface of the substrate by placing gases and liquids, through the rupture of bubbles within the foam, in direct contact with the surface of substrate.
- pressure is provided to the foam in operation 614 and, as a result, the pressured foam is channeled to produce jammed foam in operation 616 .
- the foam is channeled into a gap created by the brush enclosure.
- the gap is defined by a space between a surface of the brush enclosure (e.g., a flange) and the surface of the substrate.
- the pressure on the foam and geometry of the gap compress the foam to produce the jammed foam.
- the local rearrangement of bubbles within the jammed foam releases energy that facilitates the removal of particles and films from the surface of the substrate.
- the above described invention provides apparatuses and methods for use in cleaning a substrate.
- the enclosure of foam reduces the amount of foam needed to cover a particular surface area of the substrate.
- the geometry of the brush enclosure can specifically direct the flow of foam and control the physical properties of foam to better facilitate the removal of particles and film from the surface of the substrate.
- the brush enclosure simultaneously allows different cleaning actions (e.g., scrubbing, chemical treatment, and rearrangement of bubbles within jammed foam) to be conducted on a surface area of the substrate.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Cleaning In General (AREA)
Abstract
Description
Claims (19)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/816,337 US7441299B2 (en) | 2003-12-23 | 2004-03-31 | Apparatuses and methods for cleaning a substrate |
EP04815751A EP1697971A1 (en) | 2003-12-23 | 2004-12-21 | Apparatuses and methods for cleaning a substrate |
KR1020067012744A KR100981897B1 (en) | 2003-12-23 | 2004-12-21 | Apparatuses and methods for cleaning a substrate |
PCT/US2004/043740 WO2005064652A1 (en) | 2003-12-23 | 2004-12-21 | Apparatuses and methods for cleaning a substrate |
CN2004800389207A CN1898776B (en) | 2003-12-23 | 2004-12-21 | Apparatuses and methods for cleaning a substrate |
JP2006547508A JP4509122B2 (en) | 2003-12-23 | 2004-12-21 | Apparatus and method for cleaning a substrate |
TW093139811A TWI254988B (en) | 2003-12-23 | 2004-12-21 | Apparatuses and methods for cleaning a substrate |
MYPI20045300A MY144394A (en) | 2003-12-23 | 2004-12-22 | Apparatuses and methods for cleaning a substrate |
US12/210,198 US7625452B2 (en) | 2003-12-23 | 2008-09-14 | Apparatuses and methods for cleaning a substrate |
US13/961,741 US20150040947A1 (en) | 2003-12-23 | 2013-08-07 | Method and Systems for Cleaning A Substrate |
US13/961,821 US20150040941A1 (en) | 2003-12-23 | 2013-08-07 | Method and Apparatus for Cleaning A Semiconductor Substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/746,114 US7568490B2 (en) | 2003-12-23 | 2003-12-23 | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
US10/816,337 US7441299B2 (en) | 2003-12-23 | 2004-03-31 | Apparatuses and methods for cleaning a substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/746,114 Continuation-In-Part US7568490B2 (en) | 2003-12-23 | 2003-12-23 | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/210,198 Division US7625452B2 (en) | 2003-12-23 | 2008-09-14 | Apparatuses and methods for cleaning a substrate |
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US10/816,337 Expired - Fee Related US7441299B2 (en) | 2003-12-23 | 2004-03-31 | Apparatuses and methods for cleaning a substrate |
US12/210,198 Expired - Fee Related US7625452B2 (en) | 2003-12-23 | 2008-09-14 | Apparatuses and methods for cleaning a substrate |
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US12/240,300 Expired - Fee Related US8535451B2 (en) | 2003-12-23 | 2008-09-29 | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
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Also Published As
Publication number | Publication date |
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MY144394A (en) | 2011-09-15 |
US20050133060A1 (en) | 2005-06-23 |
CN1898775A (en) | 2007-01-17 |
MY140370A (en) | 2009-12-31 |
JP2007517401A (en) | 2007-06-28 |
US20050133061A1 (en) | 2005-06-23 |
US8535451B2 (en) | 2013-09-17 |
EP1704584A1 (en) | 2006-09-27 |
CN1898776A (en) | 2007-01-17 |
KR101122377B1 (en) | 2012-03-27 |
CN1898776B (en) | 2011-04-20 |
WO2005064647A1 (en) | 2005-07-14 |
JP4511555B2 (en) | 2010-07-28 |
US7625452B2 (en) | 2009-12-01 |
TW200527487A (en) | 2005-08-16 |
CN100421210C (en) | 2008-09-24 |
KR20060110335A (en) | 2006-10-24 |
US7568490B2 (en) | 2009-08-04 |
TWI397103B (en) | 2013-05-21 |
US20090000044A1 (en) | 2009-01-01 |
US20090078282A1 (en) | 2009-03-26 |
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