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US5387542A - Polycrystalline silicon thin film and low temperature fabrication method thereof - Google Patents

Polycrystalline silicon thin film and low temperature fabrication method thereof Download PDF

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Publication number
US5387542A
US5387542A US08/087,759 US8775993A US5387542A US 5387542 A US5387542 A US 5387542A US 8775993 A US8775993 A US 8775993A US 5387542 A US5387542 A US 5387542A
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film
exposure
amorphous silicon
thin film
polycrystalline silicon
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US08/087,759
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Kenji Yamamoto
Yoshifumi Okamoto
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Kanegafuchi Chemical Industry Co Ltd
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Kanegafuchi Chemical Industry Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • the present invention relates to a polycrystalline silicon (polysilicon) thin film fabricated on an inexpensive glass substrate and a large-area, low-temperature fabrication method thereof, having potential applications for thin film transistors and thin-film solar cells.
  • the present invention is made to resolve the above-mentioned disadvantages of the conventional art, namely, it is an object of the present invention to provide a polysilicon thin film and a low temperature fabrication method thereof in which an inexpensive glass substrate such as a soda glass is used as a substrate.
  • the polysilicon thin film of the present invention is a polysilicon thin film fabricated on a glass substrate characterized in that the hydrogen content of the film is not more than 5 atomic %.
  • the polysilicon thin film of the present invention is preferably fabricated over the surface of a metal electrode or transparent electrode, wherein both said metal or transparent electrodes are fabricated on the surface of a glass substrate. Furthermore, the thin polysilicon film is preferably fabricated using repetitions comprising the successive fabrication of amorphous silicon film by the CVD method or PVD method, exposure of the film to hydrogen plasma for a set period of time, and fabrication of further amorphous silicon film.
  • the hydrogen plasma is generated by ECR discharge using permanent magnets, and that pressure thereof is not more than 100 mTorr.
  • the method of the present invention is a method fabricating a polysilicon film on a glass substrate characterized in that the polysilicon film is formed at a temperature not more than 400° C.
  • the fabrication method of the present invention preferably comprises multiple repetitions of a process comprising the fabrication of an amorphous silicon film by the CVD method or PVD method or and subsequent exposure of the amorphous silicon film to a hydrogen plasma for a set period of time.
  • the above-mentioned CVD method or PVD method and the exposure to hydrogen plasma are carried out in the same chamber.
  • FIG. 1 is a schematic diagram of a film forming apparatus applied to the film fabrication method of the present invention
  • FIG. 2 is the Raman spectrum of an embodiment of the present invention.
  • FIG. 3 is the X-ray diffraction spectrum of an embodiment of the present invention.
  • insulating substrates such as glass quartz, sapphire and so on, or these substrates on which transparent electrodes such as TiO 2 , SnO 2 and so on are formed can be used.
  • a glass substrate is preferable because of its lower cost, and in particular, an inexpensive soda glass substrate or this having deposited thereon transparent or metal electrodes.
  • the most important consideration is that since the fabrication temperature of the thin polysilicon film is not more than 400° C., the diffusion of alkali metals, such as Na, and alkaline earth metals, such as Mg, which are present in the glass substrate, is prevented.
  • a polysilicon thin film was deposited onto a glass substrate 3.
  • an a-Si:H layer is deposited onto the glass substrate 3 to 20 ⁇ a thickness of by RF discharge; and secondly the film on substrate 3 is exposed for about 20 ⁇ about 30 seconds to an ECR plasma generated by a ECR plasma apparatus 5 constructed with permanent-magnets 5a.
  • ECR plasma apparatus 5 constructed with permanent-magnets 5a.
  • a polysilicon thin is film of about 6,000 ⁇ thick is obtained (Example 1).
  • number 1 denotes the chamber
  • number 2 denotes a substrate rotating device
  • number 4 denotes the RF electrodes.
  • the condition which the a-Si:H film was formed were: a substrate temperature of 350° C., a pressure of 0.5 Torr, an RF power density of 0.4 W/cm 2 , a SiH 4 gas flow rate of 40 SCCM, and an H 2 gas flow rate of 200 SCCM. Further the ECR conditions used were: a pressure of 0.02 Torr, a microwave electrical power of 400 W, and an H 2 gas flow rate of 200 SCCM.
  • the Raman spectrum of the fabricated film is shown in FIG. 2, and the X-ray diffraction results in FIG. 3. From the X-ray diffraction of FIG. 3, the polysilicon film is seen to have a strong (110) orientation.
  • a characteristic feature of the use of the permanent magnet 5a is that under the influence of the magnetic field, the ions are not accelerated towards the substrate 3 as occurs in the case of a standard ECR apparatus, but instead are accelerated towards the center of the diameter of the field. As a result, both the amount and the energy of ions influxing onto the substrate 3 are small compared with general ECR sources using electromagnets. On the other hand, since radicals diffuse in random directions, a similar amount of radicals is produced as with general ECR sources.
  • the manufacturing cost is low.
  • polysilicon films can be fabricated at low temperature. Therefore, inexpensive glass can be adopted as a substrate.

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

A polycrystalline silicon thin film having a hydrogen content of not more than 5 atomic %, which can be fabricated on an inexpensive glass substrate (3) such as soda glass or on a glass substrate (3) provided with a metal electrode or transparent electrode. The polycrystalline silicon thin film can be fabricated at such a tempereture by using multiple repetitions of a process comprising the fabrication of an amorphous silicon film, for example, by the CVD method, followed by exposure to a hydrogen plasma for set period of time.

Description

TECHNICAL FIELD
The present invention relates to a polycrystalline silicon (polysilicon) thin film fabricated on an inexpensive glass substrate and a large-area, low-temperature fabrication method thereof, having potential applications for thin film transistors and thin-film solar cells.
BACKGROUND ART
Since conventional methods for the fabrication of a polysilicon thin film require a high temperatures of more than 650° C., a glass substrate with a softening point of less than 650° C. is not able to be used. In order to avoid diffusion of impurities, it is necessary to use a highly pure quartz glass substrate among glass substrates with a softening point above 650° C.
Recently, a low temperature method using an excimer laser has been intensively researched. In this method, however, only a small area such as 5 mm square is able to be crystallized, so that it is necessary to move the substrate in order to obtain complete crystallization over a large area. When the substrate is moved, nonuniformity of crystallization arises in the boundary region depending upon the moving speed of the substrate, so that it is difficult to uniformly form the polysilicon thin film on a large area.
The present invention is made to resolve the above-mentioned disadvantages of the conventional art, namely, it is an object of the present invention to provide a polysilicon thin film and a low temperature fabrication method thereof in which an inexpensive glass substrate such as a soda glass is used as a substrate.
DISCLOSURE OF THE INVENTION
The polysilicon thin film of the present invention is a polysilicon thin film fabricated on a glass substrate characterized in that the hydrogen content of the film is not more than 5 atomic %.
The polysilicon thin film of the present invention is preferably fabricated over the surface of a metal electrode or transparent electrode, wherein both said metal or transparent electrodes are fabricated on the surface of a glass substrate. Furthermore, the thin polysilicon film is preferably fabricated using repetitions comprising the successive fabrication of amorphous silicon film by the CVD method or PVD method, exposure of the film to hydrogen plasma for a set period of time, and fabrication of further amorphous silicon film.
Moreover, in the present invention, it is preferable that the hydrogen plasma is generated by ECR discharge using permanent magnets, and that pressure thereof is not more than 100 mTorr.
The method of the present invention is a method fabricating a polysilicon film on a glass substrate characterized in that the polysilicon film is formed at a temperature not more than 400° C.
In addition, the fabrication method of the present invention preferably comprises multiple repetitions of a process comprising the fabrication of an amorphous silicon film by the CVD method or PVD method or and subsequent exposure of the amorphous silicon film to a hydrogen plasma for a set period of time.
Moreover, in the method of the present inventions, it is preferable that the above-mentioned CVD method or PVD method and the exposure to hydrogen plasma are carried out in the same chamber.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic diagram of a film forming apparatus applied to the film fabrication method of the present invention;
FIG. 2 is the Raman spectrum of an embodiment of the present invention; and
FIG. 3 is the X-ray diffraction spectrum of an embodiment of the present invention.
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter the present invention is described on the basis of an embodiment, however, the scope of the present invention is not limited to the embodiment.
As a substrate for fabrication of the thin polysilicon film, insulating substrates such as glass quartz, sapphire and so on, or these substrates on which transparent electrodes such as TiO2, SnO2 and so on are formed can be used.
However, of these substrates, a glass substrate is preferable because of its lower cost, and in particular, an inexpensive soda glass substrate or this having deposited thereon transparent or metal electrodes.
The most important consideration is that since the fabrication temperature of the thin polysilicon film is not more than 400° C., the diffusion of alkali metals, such as Na, and alkaline earth metals, such as Mg, which are present in the glass substrate, is prevented.
Examples 1˜2 and Comparative Example
Using a CVD apparatus shown in FIG. 1, a polysilicon thin film was deposited onto a glass substrate 3. In the fabricating procedure, firstly an a-Si:H layer is deposited onto the glass substrate 3 to 20 Å a thickness of by RF discharge; and secondly the film on substrate 3 is exposed for about 20˜about 30 seconds to an ECR plasma generated by a ECR plasma apparatus 5 constructed with permanent-magnets 5a. By repeating this procedure about 300 times, a polysilicon thin is film of about 6,000 Å thick is obtained (Example 1). In the drawing, number 1 denotes the chamber, number 2 denotes a substrate rotating device, and number 4 denotes the RF electrodes.
The condition which the a-Si:H film was formed were: a substrate temperature of 350° C., a pressure of 0.5 Torr, an RF power density of 0.4 W/cm2, a SiH4 gas flow rate of 40 SCCM, and an H2 gas flow rate of 200 SCCM. Further the ECR conditions used were: a pressure of 0.02 Torr, a microwave electrical power of 400 W, and an H2 gas flow rate of 200 SCCM. The Raman spectrum of the fabricated film is shown in FIG. 2, and the X-ray diffraction results in FIG. 3. From the X-ray diffraction of FIG. 3, the polysilicon film is seen to have a strong (110) orientation. In addition, a value of mobility of 20 cm2 /Vs was measured for this film using the Van der Paun method. Similary, in the case where the substrate temperature was 250° C., a polysilicon film was also obtained using the above-described method (Example 2).
A characteristic feature of the use of the permanent magnet 5a is that under the influence of the magnetic field, the ions are not accelerated towards the substrate 3 as occurs in the case of a standard ECR apparatus, but instead are accelerated towards the center of the diameter of the field. As a result, both the amount and the energy of ions influxing onto the substrate 3 are small compared with general ECR sources using electromagnets. On the other hand, since radicals diffuse in random directions, a similar amount of radicals is produced as with general ECR sources.
In order to observe the effect of varying the H2 plasma power, namely, the effect of varying the density of Hydrogen radicals, a film was made setting micro-wave power of 100 W (Comparative Example). In the comparative example, however, no crystallization is observed.
Industrial Applicability
As is mentioned above, since the polysilicon thin film of the present invention is formed onto inexpensive glass substrates, the manufacturing cost is low.
Furthermore, according to the fabrication method of the present invention, polysilicon films can be fabricated at low temperature. Therefore, inexpensive glass can be adopted as a substrate.

Claims (6)

We claim:
1. A thin film comprising polycrystalline silicon together with a positive amount of hydrogen up to not more than about 5 atomic percent, based on the total film,
which film has a (110) orientation and has an orientation strength ratio of (220)/(111), as measured by X-ray diffraction, of not less than about 10.
2. A thin film as claimed in claim 1 which has been formed by;
disposing a transparent or a metal electrode on a glass substrate;
applying a film of amorphous silicon, by a CVD or PVD method, onto said substrate in effective contact with said electrode;
exposing said film of amorphous silicon to a plasma, comprising hydrogen, which has been generated by ECR discharge under microwave electrical power of not less than about 300 watts in the effective presence of permanent magnets;
wherein said exposure is under conditions including;
a pressure of not more than about 100 mTorr, and
an exposure time sufficient to convert said amorphous silicon to polycrystalline silicon having said orientation and said orientation strength ratio; and
repeating said film application and exposure steps a sufficient number of times to produce said polysilicon film.
3. A thin film as claimed in claim 1 wherein the band gap of said polycrystalline silicon is about 1.1 eV.
4. A method of making a thin film comprising polysilicon containing a positive amount of hydrogen up to not more than about 5 atomic percent which comprises:
disposing a transparent or a metal electrode on a glass substrate;
carrying out a CVD or a PVD method under conditions sufficient to apply a film of amorphous silicon onto said substrate in effective contact with said electrode;
exposing said film of amorphous silicon to a plasma, comprising hydrogen, which has been generated by ECR discharge under microwave electrical power of not less than about 300 watts in the effective presence of permanent magnets;
wherein said exposure is under conditions including;
a pressure of not more than about 100 mTorr, and
an exposure time sufficient to convert said amorphous silicon to polycrystalline silicon having said (110) orientation and said orientation strength ratio; and
repeating said film application and exposure steps a sufficient number of times to produce said polysilicon film.
5. A method as claimed in claim 4 wherein said CVD or PVD methods and said exposure to said hydrogen containing plasma are carried out in a single chamber.
6. A method as claimed in claim 5 wherein said exposure of said amorphous silicon film to said plasma is carried out at a temperature of up to about 400° C.
US08/087,759 1991-11-14 1992-11-16 Polycrystalline silicon thin film and low temperature fabrication method thereof Expired - Lifetime US5387542A (en)

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JP32688791A JP3197036B2 (en) 1991-11-14 1991-11-14 Method for forming crystalline silicon thin film
PCT/JP1992/001491 WO1993010555A1 (en) 1991-11-14 1992-11-16 Polycristalline silicon thin film and process for forming it at low temperature

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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447889A (en) * 1992-09-11 1995-09-05 Sanyo Electric Co., Ltd. Method of preparing polycrystalline silicon film
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
US5956581A (en) * 1995-04-20 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20020155706A1 (en) * 2001-03-09 2002-10-24 Semiconductor Energy Laboratory Co. Ltd. Method of manufacturing a semiconductor device
US6706335B2 (en) 2000-05-31 2004-03-16 Canon Kabushiki Kaisha Method of forming silicon-based thin film
US6706336B2 (en) 2001-02-02 2004-03-16 Canon Kabushiki Kaisha Silicon-based film, formation method therefor and photovoltaic element
US20040082097A1 (en) * 1999-07-26 2004-04-29 Schott Glas Thin-film solar cells and method of making
US6812499B2 (en) 2000-10-24 2004-11-02 Canon Kabushiki Kaisha Silicon-based film and photovoltaic element
US6855621B2 (en) 2000-10-24 2005-02-15 Canon Kabushiki Kaisha Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
US6919235B1 (en) 1998-08-05 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
US20100075065A1 (en) * 2006-11-02 2010-03-25 Dow Corning Corporation Film deposition of amorphous films by electron cyclotron resonance
WO2011068065A1 (en) * 2009-12-02 2011-06-09 Canon Kabushiki Kaisha Semiconductor device and production method thereof
US20110290288A1 (en) * 2010-05-28 2011-12-01 Joen-Shen Ma Power generation umbrella
EP2230685A3 (en) * 2001-03-12 2013-10-02 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film

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US5808318A (en) * 1996-03-03 1998-09-15 Ag Technology Co., Ltd. Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction
PL2031082T3 (en) 2007-08-31 2015-03-31 Aperam Alloys Imphy Metal substrate with crystallographic texture, crystallographic texture device, photovoltaic cell and module comprising such a device and method of depositing fine layers
WO2022157958A1 (en) * 2021-01-25 2022-07-28 日本電信電話株式会社 Optical waveguide and method for producing same

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JPH03139824A (en) * 1989-10-25 1991-06-14 Agency Of Ind Science & Technol Depositing method for semiconductor device
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JPS5821324A (en) * 1981-07-30 1983-02-08 Agency Of Ind Science & Technol Pretreatment of metal surface substrate for semiconductor thin film growth added with hydrogen
DE3206413A1 (en) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Process for producing layers composed of silicon or of silicides of refractory metals using a planar magnetron sputtering apparatus
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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5447889A (en) * 1992-09-11 1995-09-05 Sanyo Electric Co., Ltd. Method of preparing polycrystalline silicon film
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
US20050208714A1 (en) * 1995-04-20 2005-09-22 Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation Method of manufacturing a semiconductor device and manufacturing system thereof
US5956581A (en) * 1995-04-20 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7569440B2 (en) 1995-04-20 2009-08-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
US6919235B1 (en) 1998-08-05 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same
US20040082097A1 (en) * 1999-07-26 2004-04-29 Schott Glas Thin-film solar cells and method of making
US7041342B2 (en) * 1999-07-26 2006-05-09 Schott Glas Thin-film solar cells and method of making
US6706335B2 (en) 2000-05-31 2004-03-16 Canon Kabushiki Kaisha Method of forming silicon-based thin film
US6812499B2 (en) 2000-10-24 2004-11-02 Canon Kabushiki Kaisha Silicon-based film and photovoltaic element
US6855621B2 (en) 2000-10-24 2005-02-15 Canon Kabushiki Kaisha Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
US6706336B2 (en) 2001-02-02 2004-03-16 Canon Kabushiki Kaisha Silicon-based film, formation method therefor and photovoltaic element
US6830994B2 (en) 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
US20020155706A1 (en) * 2001-03-09 2002-10-24 Semiconductor Energy Laboratory Co. Ltd. Method of manufacturing a semiconductor device
EP2230685A3 (en) * 2001-03-12 2013-10-02 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
US20100075065A1 (en) * 2006-11-02 2010-03-25 Dow Corning Corporation Film deposition of amorphous films by electron cyclotron resonance
WO2011068065A1 (en) * 2009-12-02 2011-06-09 Canon Kabushiki Kaisha Semiconductor device and production method thereof
CN102630344A (en) * 2009-12-02 2012-08-08 佳能株式会社 Semiconductor device and production method thereof
US20110290288A1 (en) * 2010-05-28 2011-12-01 Joen-Shen Ma Power generation umbrella

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JP3197036B2 (en) 2001-08-13
EP0571632A4 (en) 1994-03-21
WO1993010555A1 (en) 1993-05-27
JPH05136062A (en) 1993-06-01
DE69226168D1 (en) 1998-08-13
EP0571632B1 (en) 1998-07-08
DE69226168T2 (en) 1999-01-21
EP0571632A1 (en) 1993-12-01

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