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US3637425A - An insulating coating on silicon - Google Patents

An insulating coating on silicon Download PDF

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US3637425A
US3637425A US683781A US3637425DA US3637425A US 3637425 A US3637425 A US 3637425A US 683781 A US683781 A US 683781A US 3637425D A US3637425D A US 3637425DA US 3637425 A US3637425 A US 3637425A
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silicon
glass
weight
ceramic
percent
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Peter William Mcmillan
Graham Partridge
Frank Russell Ward
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English Electric Co Ltd
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English Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087—Chemical composition of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Definitions

  • insulating coating is to be taken to mean both a layer of insulating material over all or part of the surface of one or more silicon bodies, and a layer of insulating material by which a plurality of silicon bodies are bonded together or by which a silicon body is bonded to another body.
  • Silicon is used extensively for example in electronic applications, in which strips or chips of silicon are employed for example as transistors.
  • Present-day electronic engineers are working intensively on the use of complementary pairs circuits corniprising a pair of metal-oxide silicon transistors (MOST) for computer logic and storage devices.
  • MOST metal-oxide silicon transistors
  • the insulating material must have a relatively high volume resistivity (preferably in excess of 10 ohm-cm. at 500 C.), and
  • the coefficient of linear thermal expansion of the insulating material should be within the range (X-S )X 10" to (X+5) l0' per C., where XXIO" per C., is the coefficient of linear thermal expansion of the silicon.
  • the value of X is in the approximate range 32-39 X10 per C. (-500 C.
  • said coating is of a glassceramic containing, in proportions totaling at least 90 percent by weight of the total weight, Zn0, M 0 Si0 and a constituent selected from B 0 Ba0 and Ca0, the alkali metals and germanium and magnesium being substantially absent from said glass-ceramic.
  • said glass-ceramic contains approximately: 24-53 percent by weight Zn0, 9-20 percent by weight M 0 and 27-45 percent by weight Si0
  • glass-ceramics having these compositions are suitable for use in coating silicon so as to satisfy the requirements (a) to (e) above.
  • the volume resistivities of the said glass-ceramics are above 10 ohm-cm. at 500 C.;
  • the coefficient of thermal expansion should be within the general range specified earlier: the expansion of the coating must match that of the silicon, within certain limits, over the whole range of temperatures to which the article is likely to be subjected. In other words, if over any part of such range the coating is likely to expand relative to the silicon by an amount sufficient to cause strain or damage of the silicon by the coating as discussed earlier, then the coating is not suitable.
  • germanium and magnesium were present in appreciable quantities in the coating: thus there should be substantially no germanium or magnesium present.
  • the invention is applicable to any article comprising silicon having an insulating coating as defined in the first paragraph hereof, and is not confined to pair circuits, or indeed to components for electronic circuitry.
  • the Zn0, M 0 and Si0 together with a further major constituent, total at least percent of the total weight.
  • the said further major constituent is 8,0:, or Ba0 or Ca0, the choice and proportion of which depends on the proportions of the other three major constituents.
  • the glass-ceramic should be substantially alkali-free.
  • a glass-ceramic will satisfy the said requirements for coating silicon if it is included in any one of the following three groups:
  • Glass-ceramics having Zn0, N 0,, Sit), and 8,0, as major constituents totaling at least 90 percent of the total weight.
  • Zn 30-45% by weight approximately.
  • Suitable batch materials for making glass-ceramics in the above groups include the following, as appropriate: good quality glassmaking sand Si0 zinc oxide Zn0; aluminum oxide Al 0 or hydroxide Al(OH) Boric acid H 80 calcium carbonate CaCO barium carbonate BaCO zirconium dioxide Zr0 or silicate ZrSi0 metallic phosphate compatible with glass composition. Batch materials containing oxides of alkali metals, germanium or magnesium should not be used.
  • the batch materials are thoroughly mixed and are then melted, in crucibles having a high alumina content, to produce a molten glass.
  • a batch melting temperature is chosen such that the glass obtained is batch and seed-free, and is in the range l,400-l,500 C.
  • the glass is cast into cold water to form frit, which, after being washed and dried, is reduced to powder by milling for a suitable period, using for example flint pebbles or any other suitable means.
  • the resulting glass powder is sufficiently fine to pass through a sieve having 200 holes per linear inch.
  • the powder is made into a suspension, for example in methylated spirit.
  • the suspension may if desired be made alkaline: or it may be acid or neutral.
  • a silicon body to be coated is preoxidized by subjecting it to Powder glass 200 g. Methylated spirit l4
  • the suspension is applied to the preoxidized silicon using a known flow coating technique, and the coated silicon is then placed in a furnace in an atmosphere of high-purity argon and subjected to heat treatment as described above.
  • the glassccramic coating on the silicon is found to be white, smooth and free from cracks and is adherent to the silicon.
  • the two pieces of silicon are powder coated.
  • the coated silicon body is heated in a furnace, under nonoxidizing and nonreducing conditions, to a fusion temperature the value of which depends on the composition of the glass.
  • the heating rate should not exceed 5 C. per minute, and the fusion temperature is maintained for long enough to fuse the coating. It is found that when glasses having compositions in the broad groups A, B and C, given hereinbefore, are thus treated, the glass becomes devitrified during the heating process.
  • the coated body is allowed to cool at a rate not exceeding 10 C. per minute.
  • samples of silicon are degreased and then preoxidized by heating for l,200 C. for 3 hours in an atmosphere of wet argon.
  • the batch materials are melted at the appropriate batch melting temperature and cast into cold water to form frit, which is then dried.
  • Five-hundred grams of the dried frit are milled with 1,000 g. of flint pebbles having a nominal diameter of 1 inch (2.54 cm.), for 16 hours at 1,660 revolutions per hour in a mill jar having a diameter of 6 inches (15.2 cm.) and a capacity of half a gallon (2.27 liters).
  • the resulting powder is passed through a sieve having 200 holes per inch (79 holes per cm.)
  • An article comprising a silicon body having a thermally matched insulating coating of a glass-ceramic consisting essentially of, by weight,
  • An article according to claim 1 comprising a complementary pair of metal-oxide silicon transistors bonded together by the glass-ceramic coating.

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
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  • Inorganic Insulating Materials (AREA)

Abstract

Silicon is bonded or coated with a glass-ceramic containing as major constituents ZnO, Al2O3, SiO2 and either B2O3, BaO or CaO; alkali metals, Ge and Mg. are absent.

Description

nite States Patent McMillan et al. [451 Jan. 25, H972 [54] AN INSULATING COATING ON [56] Relerences Cited SILICON UNITED STATES PATENTS [72] Inventors: Peter William McMillan; Graham Par- 3 381 369 5/1968 Stone, 37/235 F mile; Ward 3,392,312 7/1968 Carman ..l06/54X ford, England [73] Assignee: The English Electric Company Limited, FOREIGN PATENTS 0R APPLICATIONS London, land 103,734 8/1937 Great Britain 106/52 l 438 002 3/1966 France ...106/52 d. N 1 [22] 17 967 1,506,436 11/1967 France ..106/54 [21] Appl. No.: 683,781
Primary Examiner-Alfred L. Leavitt Assistant ExaminerC. K. Weiffenbach [30] Foreign Apphcamm Prlomy Dam Att0rney-Misegades and Douglas, Keith Misegades and Nov. 17, 1966 Great Britain ..51,549/66 George R. Douglas, Jr. Nov. 2, 1967 Canada ..4,092
[57] ABSTRACT [5,2] Cl Silicon is bonded or coated with a glass-ceramic containing as [51] Int Cl 2:036 U00 2303c 27/00 major constituents ZnO, A1 0,, SiO and either B 0 BaO or 581 Field 6: Search ..1 17/201, 221, 125; 106 54, alkal' metals Ge and are absent 106/52; 317/234, 235 8 Claims, No Drawings AN INSULATING COATING ON SILICON This invention relates to articles comprising silicon having an insulating coating. The term insulating coating is to be taken to mean both a layer of insulating material over all or part of the surface of one or more silicon bodies, and a layer of insulating material by which a plurality of silicon bodies are bonded together or by which a silicon body is bonded to another body.
Silicon is used extensively for example in electronic applications, in which strips or chips of silicon are employed for example as transistors. Present-day electronic engineers are working intensively on the use of complementary pairs circuits corniprising a pair of metal-oxide silicon transistors (MOST) for computer logic and storage devices. There are, however, serious technological difficulties associated with the manufacture of such pair circuits, in which two pieces of silicon (N- type and P-type respectively) have to be arranged together in a predetermined geometrical relationship. What is required is an insulating material which can be used to bond the pieces of silicon together and also to provide an insulating coating over the resulting unit.
The problems involved in choosing such a material, whether for bonding pieces of silicon together or merely for coating one or more pieces of silicon, include the following:
a. the insulating material must have a relatively high volume resistivity (preferably in excess of 10 ohm-cm. at 500 C.), and
b. it must be reasonably well matched to the silicon in thermal expansion characteristics, and
c. it must be refractory to temperatures in the region of l,0O-l ,200 C., and
d. it must be able to withstand the diffusion processes carried out at such temperatures, as required, in the fabrication of silicon semiconductor devices, and
c. it must be capable of being applied satisfactorily to the silicon at a temperature substantially below the melting point of silicon, which is about 1 ,400 C.
The thermal expansion characteristics of the insulating material must be well enough matched to those of the silicon to ensure that the silicon shall not be strained or damaged by the coating, and also incidentally to ensure satisfactory adhesion: to these ends, the coefficient of linear thermal expansion of the insulating material should be within the range (X-S )X 10" to (X+5) l0' per C., where XXIO" per C., is the coefficient of linear thermal expansion of the silicon. The value of X is in the approximate range 32-39 X10 per C. (-500 C.
The requirement that the silicon should not be strained is important especially in connection with semiconductors, since excessive dislocations and slip, by the coating into the silicon, renders the latter unsuitable for use as a semiconductor. In general, we believe that this requirement imposes a more stringent limitation on the permissible range of thermal expansion coefficient than does the requirement for good adhesion.
According to the present invention, in an article comprising silicon having an insulating coating, said coating is of a glassceramic containing, in proportions totaling at least 90 percent by weight of the total weight, Zn0, M 0 Si0 and a constituent selected from B 0 Ba0 and Ca0, the alkali metals and germanium and magnesium being substantially absent from said glass-ceramic.
Preferably, said glass-ceramic contains approximately: 24-53 percent by weight Zn0, 9-20 percent by weight M 0 and 27-45 percent by weight Si0 We have found that glass-ceramics having these compositions are suitable for use in coating silicon so as to satisfy the requirements (a) to (e) above. We are not aware of any other substance that is suitable for this purpose. Our experiments with articles according to the invention, and with glass-ceramics having compositions such that silicon coated therewith is an article within the scope of the invention, have shown that:
a. the volume resistivities of the said glass-ceramics are above 10 ohm-cm. at 500 C.;
b. their coefficients of thermal expansion are in the approximate range 29-44Xl0' per C. (20-500C.
c. they are refractory to temperatures in the range l,000-l ,260 C.;
d. they withstand satisfactorily the diffusion processes used in fabricating silicon semiconductor devices; and
e. they can readily be applied to the silicon in the form of a suspension, and fused thereon at temperatures not exceeding 1 ,300 C.
With regard to the thermal expansion characteristics, however, it is not sufficient that the coefficient of thermal expansion should be within the general range specified earlier: the expansion of the coating must match that of the silicon, within certain limits, over the whole range of temperatures to which the article is likely to be subjected. In other words, if over any part of such range the coating is likely to expand relative to the silicon by an amount sufficient to cause strain or damage of the silicon by the coating as discussed earlier, then the coating is not suitable. We have found this to be the case where germanium and magnesium were present in appreciable quantities in the coating: thus there should be substantially no germanium or magnesium present.
The invention is applicable to any article comprising silicon having an insulating coating as defined in the first paragraph hereof, and is not confined to pair circuits, or indeed to components for electronic circuitry.
Glass-ceramics which we have found suitable for use as insulating coatings for silicon include those having the following approximate ranges of major constituents, in percentages by weight: Zn0 24-53 percent, Al,0=,9-20 percent, and Sit), 27-45 percent. The Zn0, M 0 and Si0 together with a further major constituent, total at least percent of the total weight. The said further major constituent is 8,0:, or Ba0 or Ca0, the choice and proportion of which depends on the proportions of the other three major constituents.
Besides the major constituents, minor constituents and trace impurities may be present, up to 10 percent of the total weight. However, there should be substantially no Mg0 and substantially no Ge0 present. It is also important that the glass-ceramic should be substantially alkali-free.
More specifically, it is found that a glass-ceramic will satisfy the said requirements for coating silicon if it is included in any one of the following three groups:
Group A.
Glass-ceramics having Zn0, N 0,, Sit), and 8,0, as major constituents totaling at least 90 percent of the total weight. Zn!) 30-45% by weight approximately. Al,0, 14-20% by weight approximately. Sit), 27-40% by weight approximately. 8,0, 546% by weight approximately.
The following minor constituents may also be present:
21-1,) 0-S% by weight approximately.
I50; 0-6% by weight approximately.
Cal) 0-l0%) by weight combined Ba0 0-l0%) approximately.
Group B.
Glass-ceramics having Zn0, Al,0,, Sit); and Ba0 as major constituents totaling at least 90 percent of the total weight: Zn0 24-53% by weight approximately. A50, 9-l4% by weight approximately. Sit], 33-42% by weight approximately. Ba0 5-20% by weight approximately.
The following minor constituents may also be present:
2d), 04% by weight approximately. 0-6Xr by weight approximately. Cat] 04% by weight approximately. Bi 0-5% by weight approximately.
Group C.
Glass-ceramics having Zn0, Al,0,, Si and Ca0 as major constituents totaling at least 90 percent of the total weight: Zn0 29-35% by weight approximately. Al,0, 1246'! by weight approxlmately. Sl0 40-45% by weight approximately. C140 1045'! by weight approximately.
The following minor constituents may also be present:
7.10, 0-5 by weight approximately. P,0 041% by weight approximately. 8110 04% by weight approximately. ,0, O-Sk by weight approximately.
Suitable batch materials for making glass-ceramics in the above groups include the following, as appropriate: good quality glassmaking sand Si0 zinc oxide Zn0; aluminum oxide Al 0 or hydroxide Al(OH) Boric acid H 80 calcium carbonate CaCO barium carbonate BaCO zirconium dioxide Zr0 or silicate ZrSi0 metallic phosphate compatible with glass composition. Batch materials containing oxides of alkali metals, germanium or magnesium should not be used.
In a typical process for preparing the glass-ceramic, the batch materials are thoroughly mixed and are then melted, in crucibles having a high alumina content, to produce a molten glass. A batch melting temperature is chosen such that the glass obtained is batch and seed-free, and is in the range l,400-l,500 C. After refining, the glass is cast into cold water to form frit, which, after being washed and dried, is reduced to powder by milling for a suitable period, using for example flint pebbles or any other suitable means. The resulting glass powder is sufficiently fine to pass through a sieve having 200 holes per linear inch. The powder is made into a suspension, for example in methylated spirit. The suspension may if desired be made alkaline: or it may be acid or neutral. A silicon body to be coated is preoxidized by subjecting it to Powder glass 200 g. Methylated spirit l4| ml. ammonia solution (NPLOH) 9 ml.
The suspension is applied to the preoxidized silicon using a known flow coating technique, and the coated silicon is then placed in a furnace in an atmosphere of high-purity argon and subjected to heat treatment as described above. The glassccramic coating on the silicon is found to be white, smooth and free from cracks and is adherent to the silicon.
In a typical process for bonding together two pieces of silicon, for example in the manufacture of an electronic device comprising a complementary pair of metal-oxide silicon transistors, the two pieces of silicon are powder coated. as
described above, with a suspension containing a glass powder having a composition in one of the groups detailed hereinbefore. They are then assembled in a suitable jig and heated under a light load to the above-mentioned fusion temperature, which is maintained for a period long enough to fuse and devitrify the glass powder so that, after cooling, the pieces of silicon are firmly bonded together by the resulting glassceramic. A typical time for which this temperature must be maintained is 5 minutes.
Fourteen specific examples will now be given, of the compositions of glass-ceramic suitable for making coatings on silicon, and of appropriate temperatures for use in the processes Exampre Zl'Qz t 1 4.0 Batch melting tem C.) 1,400 1,500 1,450 1,400 1,400 1,450 1 450 1,500 1,500 1,500 1,500 1,450 1,450 1,500 1,500 Fusion temp. 1 C. 1,080 1,220 1,180 1,180 1,170 1,250 1,260 1,230 1,240 1,200 1,220 1, ,280 1,110 1,140 Expansion cocllicientXlO 1 1' 0..- 40.8 43.4 30.6 31.7 35.0 41.6 33.2 32.5 41.3 38.7 37.7 20.2 35.4 31.5 38.5 Refractoriness (3.):
Short-tum... 1,050 1,200 1,150 1,150 1,130 1,230 1,240 1,200 1,200 1,180 1,200 1,250 1,250 1,150 1,100
Long-01111 1,000 1,100 1,080 1,080 1,070 1,150 1 150 1,100 1,150 1,120 1,150 1,200 1,200 1,100 1,050
su1table heatmg in an ox1d1z1ng atmosphere, after wh1ch the We claim:
glass powder suspension is applied to it by suitable means. The coated silicon body is heated in a furnace, under nonoxidizing and nonreducing conditions, to a fusion temperature the value of which depends on the composition of the glass. The heating rate should not exceed 5 C. per minute, and the fusion temperature is maintained for long enough to fuse the coating. It is found that when glasses having compositions in the broad groups A, B and C, given hereinbefore, are thus treated, the glass becomes devitrified during the heating process. The coated body is allowed to cool at a rate not exceeding 10 C. per minute.
In a more specific example of this process, samples of silicon are degreased and then preoxidized by heating for l,200 C. for 3 hours in an atmosphere of wet argon. The batch materials are melted at the appropriate batch melting temperature and cast into cold water to form frit, which is then dried. Five-hundred grams of the dried frit are milled with 1,000 g. of flint pebbles having a nominal diameter of 1 inch (2.54 cm.), for 16 hours at 1,660 revolutions per hour in a mill jar having a diameter of 6 inches (15.2 cm.) and a capacity of half a gallon (2.27 liters). The resulting powder is passed through a sieve having 200 holes per inch (79 holes per cm.)
1. An article comprising a silicon body having a thermally matched insulating coating of a glass-ceramic consisting essentially of, by weight,
ZnO 24-53% Sill, 27-45% Ba0 540% together. CaO
2. An article according to claim 1 comprising a complementary pair of metal-oxide silicon transistors bonded together by the glass-ceramic coating.
3. An article according to claim 1, wherein the glass-ceramic consists essentially of, by weight,
Zn0 30-45% AM], l4-2D% Sio 27-40% 4. An article according to claim 3, wherein the glass-ceramic also contains, by weight, 7
6 these substances totaling less than percent. no, 04% C30 040% 7. An article according to claim I, wherein the glass-ceram- Bat) 040%. ic consists essentially of, by weight,
these substances totaling less than 10 percent. 5 5. An article according to claim 1, wherein the glass-ceram- Am, l2 l6% r ti 1 f wei ht sio, 40-45% rc consists essen a 1y, 0 by g can 045% J3 3:5: I 0 8. An article according to claim 7, wherein the glass-ceramsio, 33-42% ic also contains, by weight, Ba!) 7 5 2 5. W i
zro, 0-51 6. An article according to claim 5, wherein the glass-ceram- PM 04% ic also contains, by weight, Ban 0-5 1 o-sez Zr0 04% 9,0: 0-6% these substances totaling less than 10 percent. CBO 0-H); 9,0, 04%

Claims (7)

  1. 2. An article according to claim 1 comprising a complementary pair of metal-oxide silicon transistors bonded together by the glass-ceramic coating.
  2. 3. An article according to claim 1, wherein the glass-ceramic consists essentially of, by weight, Zn0 30-45% Al203 14-20% Si02 27-40% B203 5-16%.
  3. 4. An article according to claim 3, wherein the glass-ceramic also contains, by weight, Zr02 0-5% P205 0-6% Ca0 0-10% Ba0 0-10%, these substances totalling less than 10 percent.
  4. 5. An article according to claim 1, wherein the glass-ceramic consists essentially, of, by weight, Zn0 24-53% Al203 9-14% Si02 33-42% Ba0 5-20%.
  5. 6. An article according to claim 5, wherein the glass-ceramic also contains, by weight, Zr02 0-5% P205 0-6% Ca0 0-10% B203 0-5% these substances totalling less than 10 percent.
  6. 7. An article according to claim 1, wherein the glass-ceramic consists essentially of, by weight, Zn0 29-35% Al203 12-16% Si02 40-45% Ca0 10-15%
  7. 8. An article according to claim 7, wherein the glass-ceramic also contains, by weight, Zr02 0-5% P205 0-6% Ba0 0-5% B203 0-5% these substances totalling less than 10 percent.
US683781A 1966-11-17 1967-11-17 An insulating coating on silicon Expired - Lifetime US3637425A (en)

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GB51549/66A GB1180908A (en) 1966-11-17 1966-11-17 Improvements in or relating to processes for Forming an Insulating Coating on Silicon, and to Coated Silicon
CA4092 1967-11-02
FR127584 1967-11-09
NL6802868A NL6802868A (en) 1966-11-17 1968-02-29

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US3754980A (en) * 1971-08-06 1973-08-28 Corning Glass Works Devitrification-resistant coating for high-silica glasses
US3787219A (en) * 1972-09-22 1974-01-22 Du Pont CaTiO{11 -CRYSTALLIZABLE GLASS DIELECTRIC COMPOSITIONS
US3848079A (en) * 1972-06-14 1974-11-12 Du Pont Pointed circuits with crystallized glass low k crossover dielectrics
US3850686A (en) * 1971-03-01 1974-11-26 Teledyne Semiconductor Inc Passivating method
US3928225A (en) * 1971-04-08 1975-12-23 Semikron Gleichrichterbau Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion
US3953646A (en) * 1974-06-24 1976-04-27 Nasa Two-component ceramic coating for silica insulation
US3955034A (en) * 1974-06-24 1976-05-04 Nasa Three-component ceramic coating for silica insulation
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices
US4144684A (en) * 1974-06-14 1979-03-20 Pilkington Brothers Limited Glazing unit
EP0038931A2 (en) * 1980-04-24 1981-11-04 International Business Machines Corporation Substrate and integrated circuit module with this substrate
US4311743A (en) * 1978-09-29 1982-01-19 Licentia Patent-Verwaltungs Gmbh Semiconductor-glass composite material and method for producing it
US4581279A (en) * 1983-01-10 1986-04-08 Hitachi, Ltd. Thick film circuit board
US5013605A (en) * 1988-08-11 1991-05-07 Gritz David N Cordierite-type glass-ceramic with controlled coloration
EP0445877A1 (en) * 1990-03-09 1991-09-11 CERAMICA FILIPPO MARAZZI S.p.A. Vitreous ceramic composition suitable for coating ceramic articles
TR26836A (en) * 1991-03-07 1994-08-16 Ceramica Filippe Marazzi S P A Glass ceramic compound suitable for coating ceramic articles
WO2004021437A1 (en) * 2002-08-09 2004-03-11 Siemens Aktiengesellschaft Coating of an integrated semiconductor circuit, and method for producing said coating

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FR2451899A1 (en) * 1979-03-23 1980-10-17 Labo Electronique Physique DIELECTRIC COMPOSITION, SERIGRAPHIABLE INK COMPRISING SUCH A COMPOSITION, AND PRODUCTS OBTAINED
GB2146566B (en) * 1983-09-16 1986-11-26 Standard Telephones Cables Ltd Electrostatic bonding
US4959330A (en) * 1989-06-20 1990-09-25 E. I. Du Pont De Nemours And Company Crystallizable glass and thick film compositions thereof
CN102781861B (en) 2011-05-26 2016-07-06 新电元工业株式会社 Semiconductor bond protection Glass composition, semiconductor device and manufacture method thereof
CN103890919B (en) 2012-05-08 2016-07-06 新电元工业株式会社 Semiconductor bond protection glass composite, the manufacture method of semiconductor device and semiconductor device
JP5340511B1 (en) 2012-05-08 2013-11-13 新電元工業株式会社 Semiconductor device manufacturing method and semiconductor device

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FR1506436A (en) * 1965-10-21 1967-12-22 English Electric Co Ltd Process for obtaining devitrified glass-ceramic and products obtained
US3381369A (en) * 1966-02-17 1968-05-07 Rca Corp Method of electrically isolating semiconductor circuit components
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GB103734A (en) * 1916-04-04 1917-02-08 Charles Edward Francis Improvements in Sewing Machines.
US3392312A (en) * 1963-11-06 1968-07-09 Carman Lab Inc Glass encapsulated electronic devices
FR1438002A (en) * 1965-06-25 1966-05-06 Mo Elektrolampovy Zd Nuclear radiation counter
FR1506436A (en) * 1965-10-21 1967-12-22 English Electric Co Ltd Process for obtaining devitrified glass-ceramic and products obtained
US3381369A (en) * 1966-02-17 1968-05-07 Rca Corp Method of electrically isolating semiconductor circuit components

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3850686A (en) * 1971-03-01 1974-11-26 Teledyne Semiconductor Inc Passivating method
US3928225A (en) * 1971-04-08 1975-12-23 Semikron Gleichrichterbau Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion
US3754980A (en) * 1971-08-06 1973-08-28 Corning Glass Works Devitrification-resistant coating for high-silica glasses
US3848079A (en) * 1972-06-14 1974-11-12 Du Pont Pointed circuits with crystallized glass low k crossover dielectrics
US3787219A (en) * 1972-09-22 1974-01-22 Du Pont CaTiO{11 -CRYSTALLIZABLE GLASS DIELECTRIC COMPOSITIONS
US4144684A (en) * 1974-06-14 1979-03-20 Pilkington Brothers Limited Glazing unit
US3955034A (en) * 1974-06-24 1976-05-04 Nasa Three-component ceramic coating for silica insulation
US3953646A (en) * 1974-06-24 1976-04-27 Nasa Two-component ceramic coating for silica insulation
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices
US4311743A (en) * 1978-09-29 1982-01-19 Licentia Patent-Verwaltungs Gmbh Semiconductor-glass composite material and method for producing it
EP0038931A2 (en) * 1980-04-24 1981-11-04 International Business Machines Corporation Substrate and integrated circuit module with this substrate
US4364100A (en) * 1980-04-24 1982-12-14 International Business Machines Corporation Multi-layered metallized silicon matrix substrate
EP0038931A3 (en) * 1980-04-24 1984-07-25 International Business Machines Corporation Substrate and integrated circuit module with this substrate
US4581279A (en) * 1983-01-10 1986-04-08 Hitachi, Ltd. Thick film circuit board
US5013605A (en) * 1988-08-11 1991-05-07 Gritz David N Cordierite-type glass-ceramic with controlled coloration
EP0445877A1 (en) * 1990-03-09 1991-09-11 CERAMICA FILIPPO MARAZZI S.p.A. Vitreous ceramic composition suitable for coating ceramic articles
TR26836A (en) * 1991-03-07 1994-08-16 Ceramica Filippe Marazzi S P A Glass ceramic compound suitable for coating ceramic articles
WO2004021437A1 (en) * 2002-08-09 2004-03-11 Siemens Aktiengesellschaft Coating of an integrated semiconductor circuit, and method for producing said coating

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NL6802868A (en) 1969-09-02
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DE1596793A1 (en) 1971-02-25
GB1180908A (en) 1970-02-11

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