Nothing Special   »   [go: up one dir, main page]

US20010040776A1 - Method and system for fabricating a high density magnetoresistive device - Google Patents

Method and system for fabricating a high density magnetoresistive device Download PDF

Info

Publication number
US20010040776A1
US20010040776A1 US09/285,330 US28533099A US2001040776A1 US 20010040776 A1 US20010040776 A1 US 20010040776A1 US 28533099 A US28533099 A US 28533099A US 2001040776 A1 US2001040776 A1 US 2001040776A1
Authority
US
United States
Prior art keywords
leads
magnetoresistive element
insulator
gap
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/285,330
Other versions
US6445553B2 (en
Inventor
Ronald Barr
Robert E. Rottmayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Digital Technologies Inc
Original Assignee
Read Rite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Read Rite Corp filed Critical Read Rite Corp
Priority to US09/285,330 priority Critical patent/US6445553B2/en
Assigned to READ-RITE CORPORATION reassignment READ-RITE CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ROTTMAYER, ROBERT E., BARR, RONALD
Publication of US20010040776A1 publication Critical patent/US20010040776A1/en
Application granted granted Critical
Publication of US6445553B2 publication Critical patent/US6445553B2/en
Assigned to TENNENBAUM CAPITAL PARTNERS, LLC reassignment TENNENBAUM CAPITAL PARTNERS, LLC SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: READ-RITE CORPORATION
Assigned to WESTERN DIGITAL (FREMONT), INC. reassignment WESTERN DIGITAL (FREMONT), INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: READ-RITE CORPORATION
Assigned to READ-RITE CORPORATION reassignment READ-RITE CORPORATION RELEASE OF SECURITY INTEREST Assignors: TENNENBAUM CAPITAL PARTNERS, LLC
Assigned to GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT reassignment GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WESTERN DIGITAL (FREMONT), INC., WESTERN DIGITAL TECHNOLOGIES, INC.
Assigned to WESTERN DIGITAL TECHNOLOGIES, INC., WESTERN DIGITAL (FREMONT), INC. reassignment WESTERN DIGITAL TECHNOLOGIES, INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT
Anticipated expiration legal-status Critical
Assigned to WESTERN DIGITAL TECHNOLOGIES, INC. reassignment WESTERN DIGITAL TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WESTERN DIGITAL (FREMONT), LLC
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Definitions

  • the present invention relates to magnetoresistive heads and more particularly to a method and system for decoupling a read gap and lead insulation, allowing magnetoresistive devices to be used in higher density recording applications.
  • Magnetic recording technology utilizes magnetoresistive (“MR”) devices in order to read data stored on a magnetic recording media, such as a disk.
  • MR devices include a MR element which has a resistivity that depends upon the magnetization of the MR element.
  • the MR element could be a giant magnetoresistive (“GMR”) element such as a spin valve or an anisotropic magnetoresistive (AMR) element, such as permalloy.
  • GMR giant magnetoresistive
  • AMR anisotropic magnetoresistive
  • Such devices also include electronics which translate the change in resistivity of the MR element into a signal that indicates the state of a bit being read.
  • the conventional MR device includes a pair of leads connected to the MR element.
  • the leads carry current to and from the MR element.
  • the signal from the MR element due to the bit being read is proportional to the current carried by the MR element.
  • the MR device also has a pair of gaps separating the MR element from a pair of magnetic shields.
  • the shields ensure that the MR element is primarily exposed to the field from a particular bit being read. Thus, the distance between the shields is determined by the track width of bits being read.
  • the MR element and leads are electrically isolated from the shields by the pair of gaps.
  • a trend in magnetic recording technology is to higher areal density in storage.
  • the track width is decreased.
  • the length of bits being read is also decreased.
  • the width of the MR element may be decreased.
  • the spacing between the shields decreases in order to magnetically isolate the MR element from bits not currently being read.
  • the thickness of the gaps also decreases. As the gap decreases in thickness, there is a higher probability that the leads will be shorted to the shield. As a result, the MR device will not function.
  • a portion of the leads may also overlap the MR element. Current is shunted away from the MR element through the leads near the overlap. As the width of the MR element decreases, this overlap becomes a higher fraction of the width of the MR element. The fraction of current shunted away from the MR element also increases. This reduces the signal from the MR element, making it more difficult for the conventional MR device to read bits.
  • the present invention provides a method and system for providing a device for reading data.
  • the device includes a magnetoresistive element.
  • the method and system comprise providing a read gap, providing a plurality of leads, and providing an insulator.
  • the read gap covers at least a portion of the magnetoresistive element.
  • the plurality of leads is electrically coupled with the magnetoresistive element.
  • the insulator electrically isolates a portion of each of the plurality of leads.
  • the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.
  • the present invention decouples formation of the read gap from formation of the insulator.
  • the read gap can be made thin without compromising insulation of the leads.
  • FIG. 1 is a flow chart depicting a conventional method for providing a magnetoresistive device.
  • FIG. 2 is a block diagram of a conventional magnetoresistive device.
  • FIG. 3 is a flow chart depicting a method for providing a magnetoresistive device in accordance with the present invention.
  • FIG. 4 is a flow chart depicting a method more detailed for providing a continuous junction defined magnetoresistive device in accordance with the present invention.
  • FIG. 5A is a block diagram of a continuous junction defined magnetoresistive device in accordance with the present invention during fabrication.
  • FIG. 5B is a block diagram of a continuous junction defined magnetoresistive device in accordance with the present invention.
  • FIG. 6 is a flow chart depicting a more detailed method for providing an exchange defined magnetoresistive device in accordance with the present invention.
  • FIG. 7A is a block diagram of an exchange defined magnetoresistive device in accordance with the present invention before etching of the second gap during fabrication.
  • FIG. 7B is a block diagram of an exchange defined magnetoresistive device in accordance with the present invention after etching of the second gap during fabrication.
  • FIG. 7C is a block diagram of an exchange defined magnetoresistive device in accordance with the present invention.
  • the present invention relates to an improvement in magnetoresistive devices.
  • the following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements.
  • Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments.
  • the present invention is not intended to be limited to the embodiment shown but is to be accorded the widest scope consistent with the principles and features described herein.
  • FIG. 1 is a flow chart depicting a conventional method 10 for fabricating a conventional contiguous junction (CJ) defined magnetoresistive (MR) device.
  • a first shield is provided, via step 12 .
  • a first gap is then deposited, via step 14 .
  • An MR element is then provided on the first gap, via step 16 .
  • the first gap electrically insulates the MR element from the first shield.
  • formation of the MR element in step 16 may include providing an insulating capping layer for the MR element. Leads are then formed, via step 18 .
  • FIG. 2 depicts a portion of a conventional CJ defined MR device 50 formed using the method 10 .
  • the MR device 50 includes first and second shields 52 and 62 , first and second gaps 54 and 60 , an MR sensor 56 and leads 58 A and 58 B.
  • the MR element 56 could be a giant magnetoresistance (GMR) element, such as a spin valve, or an anisotropic magnetoresistive (AMR) element.
  • the leads 58 A and 58 B carry current to and from the MR element 56 and magnetically bias the MR element 56 .
  • the first and second gaps 54 and 60 electrically isolate the MR element 56 and the leads 58 from the first and second shields 52 and 62 , respectively. Note that if the conventional MR device 50 was an exchange defined device, an exchange layer (not shown) would be included between the leads 58 A and 58 B and the first gap 54 .
  • the conventional MR device 10 shown in FIG. 2 functions, those with ordinary skill in the art will realize that the trends in magnetic recording technology may lead to failures in the MR device 50 as well as losses in performance.
  • Two trends in magnetic recording lead to decreases in the thickness of the second gap 60 .
  • One trend is toward recording media having higher areal densities.
  • the size of the portion of the MR device 50 shown in FIG. 2 should decrease.
  • the spacing between the first shield 52 and the second shield 60 , S decreases.
  • the thickness t of the second gap 60 may decrease as the MR device 50 scales down in size.
  • a second trend is to more complex MR elements 56 .
  • more complex MR elements are thicker.
  • some antiferromagnetic materials used in a spin valve function better when thicker.
  • some layers of a spin valve may consist of two layers, making the MR element 56 thicker.
  • Other MR elements 56 include dual spin valves and are, therefore, thicker.
  • the MR element 56 may occupy a greater fraction of the distance S between the first shield 52 and the second shield 62 . Even if the distance S between the first shield 52 and the second shield 62 does not decrease, use of a thicker MR element 56 may require that the thickness t of the second gap 60 be reduced.
  • the use of more complex MR elements also leads to the use of a thinner second gap 60 .
  • the thickness of the second gap 60 decreases, shorts between the leads 58 A and 58 B and the second shield 62 occur more frequently. Shorting causes the MR device 50 to fail. As t decreases, nonuniformities in the deposition of the second gap 60 , such as pin holes, may allow a short to form between the second shield 62 and the leads 58 A or 58 B.
  • the topography of the MR device 50 near the MR element causes shadowing during deposition of the second gap 60 .
  • the second gap may be thinner in some areas near the edges of the MR element 56 , making shorting between the leads 58 A and 58 B and the second shield 62 more probable.
  • etching during formation of the MR element 56 may cause redeposition of the conductive material forming the MR element 56 . Redeposition may also cause portion of the second gap 60 to be thinner, making shorting more likely.
  • the leads 58 A and 58 B both magnetically bias the MR element 56 and carry current to and from the MR element 56 .
  • the leads 58 A and 58 B also overlap the MR element 56 .
  • the overlap between the leads 58 A and 58 B and the MR sensor shunts current away from the MR element 56 .
  • the signal from a bit being read is proportional to the current through the MR element 56 .
  • the overlap reduces the magnitude of the signal.
  • the actual structure of the overlap may not be determinable.
  • the portion of the MR element 56 beneath the overlap may not properly magnetically biased. This may cause unpredictable artifacts in the signal.
  • the overlap occupies a small fraction of the MR element 56 .
  • the losses and artifacts in the signal may be relatively small.
  • the width of the MR element 56 (the distance between leads 58 A and 58 B) may decrease.
  • the overlap of the leads 58 A and 58 B and the MR element 56 may not scale with decreases in size of the MR element 56 . This is because the overlap of the leads 58 A and 58 B on the MR element 56 may not be controllable.
  • the overlap may occupy a larger fraction of the MR element 56 . Therefore, the relative losses and artifacts in the signal increase. Performance of the MR device 50 suffers.
  • a capping layer is provided on the MR element 56 .
  • the capping layer is provided prior to the leads 58 A and 58 B and the second gap 60 .
  • This capping layer may be an insulator.
  • the effects of the overlap may be reduced.
  • the additional capping layer adds to the spacing between the first shield 52 and the second shield 62 .
  • the capping layer may be on the order of fifty Angstroms.
  • the spacing S in current devices is on the order of five hundred to six hundred Angstroms.
  • the capping layer occupies a significant portion of the spacing S. Consequently, the thickness of the second gap 60 may be reduced, increasing the probability of shorting between the leads 58 A and 58 B and the second shield 62 .
  • the present invention provides a method and system for providing a device for reading data.
  • the device includes a magnetoresistive element.
  • the method and system comprise providing a read gap, providing a plurality of leads, and providing an insulator.
  • the read gap covers at least a portion of the magnetoresistive element.
  • the plurality of leads is electrically coupled with the magnetoresistive element.
  • the insulator electrically isolates a portion of each of the plurality of leads.
  • the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.
  • the description of a method in accordance with the present invention may omit steps for the sake of clarity.
  • the present invention will be described in terms of a particular magnetoresistive device made using a particular process. However, one of ordinary skill in the art will readily recognize that this method and system will operate effectively for other devices and other processes consistent with the present invention.
  • the present invention will be described in the context of forming a magnetoresistive device. However, one of ordinary skill in the art will readily realize that the present invention is consistent with forming a large number of magnetoresistive devices.
  • the present invention is also discussed in the context of spin valve devices used in high density recording applications. However, one of ordinary skill in the art will readily realize that the present invention can be used with other magnetoresistive elements.
  • FIG. 3 depicting a flow chart of a method 100 in accordance with the present invention.
  • the method commences after the first shield and first gap have been provided.
  • the MR element is provided, via step 102 .
  • the MR element is a spin valve, utilizing giant magnetoresistance in sensing data.
  • the MR element is an anisotropic magnetoresistive (AMR) element.
  • the second gap is provided, via step 104 .
  • the leads are then provided via step 106 .
  • an exchange layer is provided prior to deposition of the leads in step 108 .
  • the leads provided in step 106 also magnetically bias the MR element.
  • An insulator for each of the leads is then provided, via step 108 .
  • the insulator does not substantially overlap the second gap provided in step 106 .
  • a second shield is then provided, via step 110 .
  • the gap can be made significantly thinner than the insulator.
  • the spacing between the first and second shields near the MR element may be made smaller.
  • the spacing away from the MR element may be larger.
  • the MR device can be used in higher density applications. This is because the portion of the shields near the MR element can still isolate the MR element from the magnetic field of bits not currently being read.
  • the larger spacing between the shields near the leads allows the leads to be better insulated. Thus, shorting is reduced while allowing the device to be used in higher density recording applications.
  • FIG. 4 depicts a more detailed flow chart of a method 200 for providing a CJ defined device in accordance with the present invention.
  • FIGS. 5 A- 5 B depict a CJ defined device 250 in accordance with the method 200 .
  • the method 200 preferably commences after a first shield and a first gap have been provided.
  • the layer(s) which will form the MR element are deposited, via step 202 .
  • step 202 includes depositing layers of a spin valve.
  • the second gap is then deposited, via step 204 .
  • a bi-layer photoresist structure is then provided, via step 206 .
  • step 206 includes providing a first photoresist layer, providing a pattern on the layer, and developing the resist to leave the first layer of the bi-layer structure.
  • step 206 also includes providing a second photoresist layer, providing a pattern on the second layer, and developing the second photoresist to leave the bi-layer structure. Note, however, that in an alternate embodiment, a bi-layer structure need not be used.
  • the MR layers, deposited in step 202 , and the second gap are then etched, via step 208 . Thus, the MR element and second gap are delineated in step 208 .
  • FIG. 5A depicts the CJ defined device 250 after completion of step 208 .
  • the CJ defined device 250 includes a first shield 252 , a second shield 254 , an MR element 256 , and a second gap 258 .
  • the CJ defined device 250 is also depicted with a bi-layer photoresist structure 260 .
  • the second gap 258 and the MR element 256 are aligned because the same bi-layer photoresist structure 260 is used as a mask for both the MR element 256 and the second gap 258 .
  • the leads are then provided, via step 210 .
  • the leads deposited in step 210 also magnetically bias the MR element 256 .
  • An insulator for each of the leads is provided, via step 212 .
  • the bi-layer photoresist structure 260 is then stripped, via step 214 .
  • the second shield is then provided, via step 216 .
  • FIG. 5B depicts the CJ defined device 250 after completion of step 216 .
  • the CJ defined device 250 also includes leads 262 A and 262 B, insulators 264 A and 264 B, and a second shield 266 . Because the leads 262 A and 262 B and the insulators 264 A and 264 B are provided before the bi-layer photoresist structure 260 is stripped, the leads 262 A and 262 B and the insulators 264 A and 264 B do not substantially overlap MR element 256 or the second gap 258 .
  • the second gap 258 can be made much thinner than the insulators 264 A and 264 B.
  • the spacing between the first shield 252 and the second shield 266 can be made smaller near the MR element 256 without compromising insulation of the leads 262 A and 262 B.
  • the MR element 256 could be made thicker or more complex without substantially increasing the risk of shorting between the leads 262 A or 262 B and the second shield 266 .
  • more complex MR element 256 may be used and the CJ defined device 250 may be used in higher density recording applications.
  • the CJ defined device 250 may be scaled down without concern about increasing the relative effects of the overlap. Moreover, this is accomplished without using an additional capping layer between the MR element 256 and the second gap 258 . Such an additional capping layer would add approximately fifty Angstroms to the spacing between the first shield 252 and the second shield 266 , which is on the order of six hundred Angstroms or less. Thus, the small spacing between the first shield 252 and the second shield 266 can be preserved. Consequently, the CJ defined device 250 remains useful for high density recording applications.
  • FIG. 6 depicts a more detailed flow chart of a method 300 used for providing an exchange defined device.
  • FIGS. 7A through 7C depict the exchange-defined device 350 at various stages in processing.
  • the method 300 preferably commences after a first shield and a first gap have been provided.
  • the MR element is provided via step 302 .
  • the second gap is then deposited via step 304 .
  • a bi-layer photoresist structure is then provided, via step 306 .
  • step 306 includes providing a first photoresist layer, providing a pattern on the layer, and developing the resist to leave the first layer of the bi-layer structure.
  • step 306 also includes providing a second photoresist layer, providing a pattern on the second layer, and developing the second photoresist to leave the bi-layer structure. Note, however, that in an alternate embodiment, a bi-layer structure need not be used.
  • FIG. 7A depicts the exchange-defined device 350 after step 306 is completed.
  • the exchange defined device 350 includes a first shield 352 , a first gap 354 , an MR element 356 , and a second gap layer 358 .
  • a bi-layer photoresist structure 360 is also depicted.
  • the second gap layer 358 is then etched, via step 308 .
  • the etch performed in step 308 stops substantially at the surface of the MR element 356 .
  • step 308 is performed using a reactive ion etch that etches the second gap 358 but stops at the MR element 356 .
  • FIG. 7B depicts the exchange defined device 350 after step 308 is completed.
  • the second gap 358 has been defined by the bi-layer photoresist structure 360 and the etch performed in step 308 .
  • the exchange layer which magnetically biases the MR element 256 is then deposited, via step 310 .
  • the leads are provided, via step 312 .
  • the insulator for each of the leads is then provided, via step 314 .
  • the bi-layer photoresist structure 360 is stripped.
  • the second shield is then provided, via step 318 .
  • FIG. 7C depicts the exchange defined device 350 after completion of step 318 .
  • the exchange defined device 350 includes exchange layers 362 A and 362 B, leads 364 A and 364 B, insulators 366 A and 366 B, and a second shield 368 . Because the exchange layers 362 A and 362 B, the leads 364 A and 364 B, and insulators 366 A and 366 B are deposited while the bi-layer photoresist structure 360 is in place, they do not overlap the interface between the second gap 358 and the MR element 356 .
  • the second gap 358 can be made much thinner than the insulators 366 A and 366 B.
  • the spacing between the first shield 352 and the second shield 368 can be made smaller near the MR element 356 without compromising insulation of the leads 364 A and 364 B.
  • the MR element 356 could be made thicker or more complex without substantially increasing the risk of shorting between the leads 364 A or 364 B and the second shield 368 .
  • a more complex MR element 356 may be used and the exchange-defined device 350 may be used in higher density recording applications.
  • the exchange-defined device 350 may be scaled down without concern about increasing the relative effects of the overlap. Moreover, this is accomplished without using an additional capping layer between the MR element 356 and the second gap 358 . Such an additional capping layer would add approximately fifty Angstroms to the five to six hundred Angstrom spacing between the first shield 352 and the second shield 368 . Thus, the exchange defined device 350 remains useful for high density recording applications.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)

Abstract

A system and method for providing a device for reading data is disclosed. The device includes a magnetoresistive element. The method and system include providing a read gap, providing a plurality of leads, and providing an insulator. The read gap covers at least a portion of the magnetoresistive element. The plurality of leads is electrically coupled with the magnetoresistive element. The insulator electrically isolates a portion of each of the plurality of leads. In one aspect, the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.

Description

    FIELD OF THE INVENTION
  • The present invention relates to magnetoresistive heads and more particularly to a method and system for decoupling a read gap and lead insulation, allowing magnetoresistive devices to be used in higher density recording applications. [0001]
  • BACKGROUND OF THE INVENTION
  • Magnetic recording technology utilizes magnetoresistive (“MR”) devices in order to read data stored on a magnetic recording media, such as a disk. Conventional MR devices include a MR element which has a resistivity that depends upon the magnetization of the MR element. The MR element could be a giant magnetoresistive (“GMR”) element such as a spin valve or an anisotropic magnetoresistive (AMR) element, such as permalloy. Such devices also include electronics which translate the change in resistivity of the MR element into a signal that indicates the state of a bit being read. [0002]
  • In addition, to the MR element, the conventional MR device includes a pair of leads connected to the MR element. The leads carry current to and from the MR element. The signal from the MR element due to the bit being read is proportional to the current carried by the MR element. The MR device also has a pair of gaps separating the MR element from a pair of magnetic shields. The shields ensure that the MR element is primarily exposed to the field from a particular bit being read. Thus, the distance between the shields is determined by the track width of bits being read. The MR element and leads are electrically isolated from the shields by the pair of gaps. [0003]
  • A trend in magnetic recording technology is to higher areal density in storage. In order to increase the density of data storage, the track width is decreased. The length of bits being read is also decreased. Thus, the width of the MR element may be decreased. The spacing between the shields decreases in order to magnetically isolate the MR element from bits not currently being read. [0004]
  • As the spacing between the shields decreases, the thickness of the gaps also decreases. As the gap decreases in thickness, there is a higher probability that the leads will be shorted to the shield. As a result, the MR device will not function. In the conventional MR device, a portion of the leads may also overlap the MR element. Current is shunted away from the MR element through the leads near the overlap. As the width of the MR element decreases, this overlap becomes a higher fraction of the width of the MR element. The fraction of current shunted away from the MR element also increases. This reduces the signal from the MR element, making it more difficult for the conventional MR device to read bits. [0005]
  • Accordingly, what is needed is a system and method for providing a higher density MR device. It would also be desirable for the MR device to exhibit fewer losses due to current shunting. The present invention addresses such a need. [0006]
  • SUMMARY OF THE INVENTION
  • The present invention provides a method and system for providing a device for reading data. The device includes a magnetoresistive element. The method and system comprise providing a read gap, providing a plurality of leads, and providing an insulator. The read gap covers at least a portion of the magnetoresistive element. The plurality of leads is electrically coupled with the magnetoresistive element. The insulator electrically isolates a portion of each of the plurality of leads. In one aspect, the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process. [0007]
  • According to the system and method disclosed herein, the present invention decouples formation of the read gap from formation of the insulator. Thus, the read gap can be made thin without compromising insulation of the leads. The device to be used to read higher density data.[0008]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a flow chart depicting a conventional method for providing a magnetoresistive device. [0009]
  • FIG. 2 is a block diagram of a conventional magnetoresistive device. [0010]
  • FIG. 3 is a flow chart depicting a method for providing a magnetoresistive device in accordance with the present invention. [0011]
  • FIG. 4 is a flow chart depicting a method more detailed for providing a continuous junction defined magnetoresistive device in accordance with the present invention. [0012]
  • FIG. 5A is a block diagram of a continuous junction defined magnetoresistive device in accordance with the present invention during fabrication. [0013]
  • FIG. 5B is a block diagram of a continuous junction defined magnetoresistive device in accordance with the present invention. [0014]
  • FIG. 6 is a flow chart depicting a more detailed method for providing an exchange defined magnetoresistive device in accordance with the present invention. [0015]
  • FIG. 7A is a block diagram of an exchange defined magnetoresistive device in accordance with the present invention before etching of the second gap during fabrication. [0016]
  • FIG. 7B is a block diagram of an exchange defined magnetoresistive device in accordance with the present invention after etching of the second gap during fabrication. [0017]
  • FIG. 7C is a block diagram of an exchange defined magnetoresistive device in accordance with the present invention.[0018]
  • DETAILED DESCRIPTION OF THE INVENTION
  • The present invention relates to an improvement in magnetoresistive devices. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments. Thus, the present invention is not intended to be limited to the embodiment shown but is to be accorded the widest scope consistent with the principles and features described herein. [0019]
  • FIG. 1 is a flow chart depicting a conventional method [0020] 10 for fabricating a conventional contiguous junction (CJ) defined magnetoresistive (MR) device. A first shield is provided, via step 12. A first gap is then deposited, via step 14. An MR element is then provided on the first gap, via step 16. Thus, the first gap electrically insulates the MR element from the first shield. In some conventional methods, formation of the MR element in step 16 may include providing an insulating capping layer for the MR element. Leads are then formed, via step 18. Note that if the method 10 were used to form a exchange defined MR device, not shown, an exchange layer would be deposited at the edges of the MR element prior to deposition of the leads in step 18. A second gap and a second shield are then provided, via steps 20 and 22, respectively.
  • FIG. 2 depicts a portion of a conventional CJ defined [0021] MR device 50 formed using the method 10. The MR device 50 includes first and second shields 52 and 62, first and second gaps 54 and 60, an MR sensor 56 and leads 58A and 58B. The MR element 56 could be a giant magnetoresistance (GMR) element, such as a spin valve, or an anisotropic magnetoresistive (AMR) element. The leads 58A and 58B carry current to and from the MR element 56 and magnetically bias the MR element 56. The first and second gaps 54 and 60 electrically isolate the MR element 56 and the leads 58 from the first and second shields 52 and 62, respectively. Note that if the conventional MR device 50 was an exchange defined device, an exchange layer (not shown) would be included between the leads 58A and 58B and the first gap 54.
  • Although the conventional MR device [0022] 10 shown in FIG. 2 functions, those with ordinary skill in the art will realize that the trends in magnetic recording technology may lead to failures in the MR device 50 as well as losses in performance. Two trends in magnetic recording lead to decreases in the thickness of the second gap 60. One trend is toward recording media having higher areal densities. In order to read data from such recording media, the size of the portion of the MR device 50 shown in FIG. 2 should decrease. In particular, the spacing between the first shield 52 and the second shield 60, S, decreases. When S decreases, the thickness t of the second gap 60 may decrease as the MR device 50 scales down in size.
  • A second trend is to more [0023] complex MR elements 56. Typically, more complex MR elements are thicker. For example, some antiferromagnetic materials used in a spin valve function better when thicker. In addition, some layers of a spin valve may consist of two layers, making the MR element 56 thicker. Other MR elements 56 include dual spin valves and are, therefore, thicker. Thus, the MR element 56 may occupy a greater fraction of the distance S between the first shield 52 and the second shield 62. Even if the distance S between the first shield 52 and the second shield 62 does not decrease, use of a thicker MR element 56 may require that the thickness t of the second gap 60 be reduced. Thus, the use of more complex MR elements also leads to the use of a thinner second gap 60.
  • One of ordinary skill in the art will realize that when the thickness of the [0024] second gap 60 decreases, shorts between the leads 58A and 58B and the second shield 62 occur more frequently. Shorting causes the MR device 50 to fail. As t decreases, nonuniformities in the deposition of the second gap 60, such as pin holes, may allow a short to form between the second shield 62 and the leads 58A or 58B. In addition, as can be seen in FIG. 2, the topography of the MR device 50 near the MR element causes shadowing during deposition of the second gap 60. The second gap may be thinner in some areas near the edges of the MR element 56, making shorting between the leads 58A and 58B and the second shield 62 more probable. Finally, etching during formation of the MR element 56 may cause redeposition of the conductive material forming the MR element 56. Redeposition may also cause portion of the second gap 60 to be thinner, making shorting more likely.
  • One of ordinary skill in the art will also realize that increases in the areal density of the recording media may reduce the performance of the [0025] MR device 50 even if shorting between the leads 58A and 58B and the second shield 62 does not occur. The leads 58A and 58B both magnetically bias the MR element 56 and carry current to and from the MR element 56. The leads 58A and 58B also overlap the MR element 56. The overlap between the leads 58A and 58B and the MR sensor shunts current away from the MR element 56. The signal from a bit being read is proportional to the current through the MR element 56. Thus, the overlap reduces the magnitude of the signal. Moreover, the actual structure of the overlap may not be determinable. The portion of the MR element 56 beneath the overlap may not properly magnetically biased. This may cause unpredictable artifacts in the signal.
  • At larger sizes, the overlap occupies a small fraction of the [0026] MR element 56. Thus, the losses and artifacts in the signal may be relatively small. As areal density increases, however, the width of the MR element 56 (the distance between leads 58A and 58B) may decrease. The overlap of the leads 58A and 58B and the MR element 56 may not scale with decreases in size of the MR element 56. This is because the overlap of the leads 58A and 58B on the MR element 56 may not be controllable. Thus, the overlap may occupy a larger fraction of the MR element 56. Therefore, the relative losses and artifacts in the signal increase. Performance of the MR device 50 suffers.
  • Note that in some [0027] conventional MR devices 50, a capping layer is provided on the MR element 56. The capping layer is provided prior to the leads 58A and 58B and the second gap 60. This capping layer may be an insulator. Thus, the effects of the overlap may be reduced. However, the additional capping layer adds to the spacing between the first shield 52 and the second shield 62. For example, the capping layer may be on the order of fifty Angstroms. The spacing S in current devices is on the order of five hundred to six hundred Angstroms. The capping layer occupies a significant portion of the spacing S. Consequently, the thickness of the second gap 60 may be reduced, increasing the probability of shorting between the leads 58A and 58B and the second shield 62.
  • The present invention provides a method and system for providing a device for reading data. The device includes a magnetoresistive element. The method and system comprise providing a read gap, providing a plurality of leads, and providing an insulator. The read gap covers at least a portion of the magnetoresistive element. The plurality of leads is electrically coupled with the magnetoresistive element. The insulator electrically isolates a portion of each of the plurality of leads. In one aspect, the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process. Moreover, the description of a method in accordance with the present invention may omit steps for the sake of clarity. [0028]
  • The present invention will be described in terms of a particular magnetoresistive device made using a particular process. However, one of ordinary skill in the art will readily recognize that this method and system will operate effectively for other devices and other processes consistent with the present invention. In addition, the present invention will be described in the context of forming a magnetoresistive device. However, one of ordinary skill in the art will readily realize that the present invention is consistent with forming a large number of magnetoresistive devices. The present invention is also discussed in the context of spin valve devices used in high density recording applications. However, one of ordinary skill in the art will readily realize that the present invention can be used with other magnetoresistive elements. [0029]
  • To more particularly illustrate the method and system in accordance with the present invention, refer now to FIG. 3 depicting a flow chart of a [0030] method 100 in accordance with the present invention. The method commences after the first shield and first gap have been provided. The MR element is provided, via step 102. In a preferred embodiment, the MR element is a spin valve, utilizing giant magnetoresistance in sensing data. However, in an alternate embodiment, the MR element is an anisotropic magnetoresistive (AMR) element. The second gap is provided, via step 104. The leads are then provided via step 106. In an exchange defined device, an exchange layer is provided prior to deposition of the leads in step 108. In a CJ defined device, the leads provided in step 106 also magnetically bias the MR element. An insulator for each of the leads is then provided, via step 108. The insulator does not substantially overlap the second gap provided in step 106. A second shield is then provided, via step 110.
  • Because providing the gap is provided in a separate step from the insulator, the gap can be made significantly thinner than the insulator. As a result, the spacing between the first and second shields near the MR element may be made smaller. At the same time, the spacing away from the MR element may be larger. Because the spacing between the shields near the MR element can be small, the MR device can be used in higher density applications. This is because the portion of the shields near the MR element can still isolate the MR element from the magnetic field of bits not currently being read. In addition, the larger spacing between the shields near the leads allows the leads to be better insulated. Thus, shorting is reduced while allowing the device to be used in higher density recording applications. [0031]
  • FIG. 4 depicts a more detailed flow chart of a [0032] method 200 for providing a CJ defined device in accordance with the present invention. FIGS. 5A-5B depict a CJ defined device 250 in accordance with the method 200. Referring now to FIG. 4, the method 200 preferably commences after a first shield and a first gap have been provided. The layer(s) which will form the MR element are deposited, via step 202. In a preferred embodiment, step 202 includes depositing layers of a spin valve. The second gap is then deposited, via step 204. A bi-layer photoresist structure is then provided, via step 206. In a preferred embodiment, step 206 includes providing a first photoresist layer, providing a pattern on the layer, and developing the resist to leave the first layer of the bi-layer structure. In such an embodiment, step 206 also includes providing a second photoresist layer, providing a pattern on the second layer, and developing the second photoresist to leave the bi-layer structure. Note, however, that in an alternate embodiment, a bi-layer structure need not be used. The MR layers, deposited in step 202, and the second gap are then etched, via step 208. Thus, the MR element and second gap are delineated in step 208.
  • FIG. 5A depicts the CJ defined [0033] device 250 after completion of step 208. The CJ defined device 250 includes a first shield 252, a second shield 254, an MR element 256, and a second gap 258. The CJ defined device 250 is also depicted with a bi-layer photoresist structure 260. The second gap 258 and the MR element 256 are aligned because the same bi-layer photoresist structure 260 is used as a mask for both the MR element 256 and the second gap 258.
  • Referring back to FIG. 4, the leads are then provided, via [0034] step 210. The leads deposited in step 210 also magnetically bias the MR element 256. An insulator for each of the leads is provided, via step 212. The bi-layer photoresist structure 260 is then stripped, via step 214. The second shield is then provided, via step 216.
  • FIG. 5B depicts the CJ defined [0035] device 250 after completion of step 216. The CJ defined device 250 also includes leads 262A and 262B, insulators 264A and 264B, and a second shield 266. Because the leads 262A and 262B and the insulators 264A and 264B are provided before the bi-layer photoresist structure 260 is stripped, the leads 262A and 262B and the insulators 264A and 264B do not substantially overlap MR element 256 or the second gap 258.
  • Because the [0036] gap 258 is decoupled from the insulators 264A and 264B, the second gap 258 can be made much thinner than the insulators 264A and 264B. Thus, the spacing between the first shield 252 and the second shield 266 can be made smaller near the MR element 256 without compromising insulation of the leads 262A and 262B. For the same reason, the MR element 256 could be made thicker or more complex without substantially increasing the risk of shorting between the leads 262A or 262B and the second shield 266. Thus, more complex MR element 256 may be used and the CJ defined device 250 may be used in higher density recording applications.
  • In addition, because the [0037] second gap 258 is deposited prior to the leads 262A and 262B, the leads 262A and 262B do not substantially overlap the MR element 256. Thus, the effects due to the overlap, discussed above, may be substantially eliminated. Thus, the CJ defined device 250 may be scaled down without concern about increasing the relative effects of the overlap. Moreover, this is accomplished without using an additional capping layer between the MR element 256 and the second gap 258. Such an additional capping layer would add approximately fifty Angstroms to the spacing between the first shield 252 and the second shield 266, which is on the order of six hundred Angstroms or less. Thus, the small spacing between the first shield 252 and the second shield 266 can be preserved. Consequently, the CJ defined device 250 remains useful for high density recording applications.
  • FIG. 6 depicts a more detailed flow chart of a [0038] method 300 used for providing an exchange defined device. FIGS. 7A through 7C depict the exchange-defined device 350 at various stages in processing. Referring now to FIG. 6, the method 300 preferably commences after a first shield and a first gap have been provided. The MR element is provided via step 302. The second gap is then deposited via step 304. A bi-layer photoresist structure is then provided, via step 306. In a preferred embodiment, step 306 includes providing a first photoresist layer, providing a pattern on the layer, and developing the resist to leave the first layer of the bi-layer structure. In such an embodiment, step 306 also includes providing a second photoresist layer, providing a pattern on the second layer, and developing the second photoresist to leave the bi-layer structure. Note, however, that in an alternate embodiment, a bi-layer structure need not be used.
  • FIG. 7A depicts the exchange-defined [0039] device 350 after step 306 is completed. The exchange defined device 350 includes a first shield 352, a first gap 354, an MR element 356, and a second gap layer 358. A bi-layer photoresist structure 360 is also depicted. Referring back to FIG. 6, the second gap layer 358 is then etched, via step 308. Thus, the etch performed in step 308 stops substantially at the surface of the MR element 356. In one embodiment, step 308 is performed using a reactive ion etch that etches the second gap 358 but stops at the MR element 356.
  • Refer now to FIG. 7B, which depicts the exchange defined [0040] device 350 after step 308 is completed. The second gap 358 has been defined by the bi-layer photoresist structure 360 and the etch performed in step 308.
  • Referring back to FIG. 6, the exchange layer which magnetically biases the [0041] MR element 256 is then deposited, via step 310. The leads are provided, via step 312. The insulator for each of the leads is then provided, via step 314. Once the leads have been provided in step 314, the bi-layer photoresist structure 360 is stripped. The second shield is then provided, via step 318.
  • Refer now to FIG. 7C, which depicts the exchange defined [0042] device 350 after completion of step 318. The exchange defined device 350 includes exchange layers 362A and 362B, leads 364A and 364B, insulators 366A and 366B, and a second shield 368. Because the exchange layers 362A and 362B, the leads 364A and 364B, and insulators 366A and 366B are deposited while the bi-layer photoresist structure 360 is in place, they do not overlap the interface between the second gap 358 and the MR element 356.
  • Because the [0043] gap 358 is decoupled from the insulators 366A and 366B, the second gap 358 can be made much thinner than the insulators 366A and 366B. Thus, the spacing between the first shield 352 and the second shield 368 can be made smaller near the MR element 356 without compromising insulation of the leads 364A and 364B. For the same reason, the MR element 356 could be made thicker or more complex without substantially increasing the risk of shorting between the leads 364A or 364B and the second shield 368. Thus, a more complex MR element 356 may be used and the exchange-defined device 350 may be used in higher density recording applications.
  • In addition, because the [0044] second gap 358 is deposited prior to the leads 364A and 364B, the leads 364A and 364B do not substantially overlap the MR element 356. Thus, the effects due to the overlap, discussed above, may be substantially eliminated. Thus, the exchange-defined device 350 may be scaled down without concern about increasing the relative effects of the overlap. Moreover, this is accomplished without using an additional capping layer between the MR element 356 and the second gap 358. Such an additional capping layer would add approximately fifty Angstroms to the five to six hundred Angstrom spacing between the first shield 352 and the second shield 368. Thus, the exchange defined device 350 remains useful for high density recording applications.
  • A method and system has been disclosed for providing an MR device which can be used for higher density recording applications. Although the present invention has been described in accordance with the embodiments shown, one of ordinary skill in the art will readily recognize that there could be variations to the embodiments and those variations would be within the spirit and scope of the present invention. Accordingly, many modifications may be made by one of ordinary skill in the art without departing from the spirit and scope of the appended claims. [0045]

Claims (18)

What is claimed is:
1. A method for providing a device for reading data, the device including a magnetoresistive element, the method comprising the steps of:
(a) providing a read gap covering at least a portion of the magnetoresistive element;
(b) providing a plurality of leads electrically coupled with the magnetoresistive element; and
(c) providing an insulator for electrically isolating a portion of each of the plurality of leads.
2. The method of
claim 1
wherein the step of providing the plurality of leads (b) further includes the step of:
(b1) providing the plurality of leads after the gap providing step (b) and before the insulator providing step (d).
3. The method of
claim 2
further comprising the step of:
(d) providing a shield adjacent to the read gap and a portion of the insulator.
4. The method of
claim 2
wherein the gap has a first thickness and wherein insulator providing step (c) further includes the step of:
(c1) depositing an insulating layer substantially covering the plurality of leads and having a second thickness, the second thickness being greater than the first thickness.
5. The method of
claim 2
wherein the plurality of leads further magnetically bias the magnetoresistive element.
6. The method of
claim 2
further comprising the step of:
(e) depositing an exchange layer prior to depositing the leads, the exchange layer covering a second portion of the magnetoresistive element, the exchange layer for magnetically biasing the magnetoresistive element.
7. The method of
claim 2
wherein the magnetoresistive element further includes a giant magnetoresistive element.
8. A device for reading data, the device including a magnetoresistive element, the device comprising:
a read gap covering at least a portion of the magnetoresistive element;
a plurality of leads coupled with the magnetoresistive element, the plurality of leads for carrying current to and from the magnetoresistive element; and
an insulator substantially covering a portion of each of the plurality of leads;
wherein the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.
9. The device of
claim 8
further comprising:
a shield adjacent to the read gap and a portion of the insulator, the insulator electrically insulating the portion of each of the plurality of leads from the shield.
10. The device of
claim 8
wherein the gap has a first thickness and the insulator has a second thickness, the second thickness being greater than the first thickness.
11. The device of
claim 8
wherein the plurality of leads further magnetically bias the magnetoresistive element.
12. The device of
claim 8
further comprising:
an exchange layer covering a second portion of the magnetoresistive element, the exchange layer for magnetically biasing the magnetoresistive element.
13. The device of
claim 8
wherein the magnetoresistive element further includes a giant magnetoresistive element.
14. A magnetic recording system comprising:
a magnetic recording media for storing data; and
a device for reading the data, the device including, a magnetoresistive element, a read gap covering at lest a portion of the magnetoresistive element, a plurality of leads coupled with the magnetoresistive element, an insulator substantially covering a portion of each of the plurality of leads; and a shield adjacent to the read gap and a portion of the insulator, the insulator electrically insulating the portion of each of the plurality of leads from the shield;
wherein the read gap is formed in a first process and the insulator is formed in a second process decoupled from the first process.
15. The system of
claim 14
wherein the gap has a first thickness and the insulator has a second thickness, the second thickness being greater than the first thickness.
16. The system of
claim 14
wherein the plurality of leads further magnetically bias the magnetoresistive element.
17. The system of
claim 14
further comprising:
an exchange layer covering a second portion of the magnetoresistive element, the exchange layer for magnetically biasing the magnetoresistive element.
18. The system of
claim 14
wherein the magnetoresistive element further includes a giant magnetoresistive element.
US09/285,330 1999-04-02 1999-04-02 Method and system for fabricating a high density magnetoresistive device Expired - Fee Related US6445553B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/285,330 US6445553B2 (en) 1999-04-02 1999-04-02 Method and system for fabricating a high density magnetoresistive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/285,330 US6445553B2 (en) 1999-04-02 1999-04-02 Method and system for fabricating a high density magnetoresistive device

Publications (2)

Publication Number Publication Date
US20010040776A1 true US20010040776A1 (en) 2001-11-15
US6445553B2 US6445553B2 (en) 2002-09-03

Family

ID=23093766

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/285,330 Expired - Fee Related US6445553B2 (en) 1999-04-02 1999-04-02 Method and system for fabricating a high density magnetoresistive device

Country Status (1)

Country Link
US (1) US6445553B2 (en)

Families Citing this family (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3939503B2 (en) * 2001-03-22 2007-07-04 アルプス電気株式会社 Magnetic sensing element and manufacturing method thereof
US8689430B1 (en) 2006-11-29 2014-04-08 Western Digital (Fremont), Llc Method for providing a perpendicular magnetic recording (PMR)head
US8404128B1 (en) 2009-02-23 2013-03-26 Western Digital (Fremont), Llc Method and system for providing a perpendicular magnetic recording head
US8400731B1 (en) 2009-04-19 2013-03-19 Western Digital (Fremont), Llc Write head with variable side shield gaps
US8611055B1 (en) 2009-07-31 2013-12-17 Western Digital (Fremont), Llc Magnetic etch-stop layer for magnetoresistive read heads
US9202480B2 (en) 2009-10-14 2015-12-01 Western Digital (Fremont), LLC. Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer
US8441896B2 (en) 2010-06-25 2013-05-14 Western Digital (Fremont), Llc Energy assisted magnetic recording head having laser integrated mounted to slider
US8997832B1 (en) 2010-11-23 2015-04-07 Western Digital (Fremont), Llc Method of fabricating micrometer scale components
US8441756B1 (en) 2010-12-16 2013-05-14 Western Digital (Fremont), Llc Method and system for providing an antiferromagnetically coupled writer
US9123359B1 (en) 2010-12-22 2015-09-01 Western Digital (Fremont), Llc Magnetic recording transducer with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields and method of fabrication
US8456961B1 (en) 2011-03-22 2013-06-04 Western Digital (Fremont), Llc Systems and methods for mounting and aligning a laser in an electrically assisted magnetic recording assembly
US8419954B1 (en) 2011-10-31 2013-04-16 Western Digital (Fremont), Llc Method for providing a side shield for a magnetic recording transducer
US8451563B1 (en) 2011-12-20 2013-05-28 Western Digital (Fremont), Llc Method for providing a side shield for a magnetic recording transducer using an air bridge
US8760823B1 (en) 2011-12-20 2014-06-24 Western Digital (Fremont), Llc Method and system for providing a read transducer having soft and hard magnetic bias structures
US9093639B2 (en) 2012-02-21 2015-07-28 Western Digital (Fremont), Llc Methods for manufacturing a magnetoresistive structure utilizing heating and cooling
US9349392B1 (en) 2012-05-24 2016-05-24 Western Digital (Fremont), Llc Methods for improving adhesion on dielectric substrates
US8724259B1 (en) 2012-06-11 2014-05-13 Western Digital (Fremont), Llc Conformal high moment side shield seed layer for perpendicular magnetic recording writer
US8711528B1 (en) 2012-06-29 2014-04-29 Western Digital (Fremont), Llc Tunnel magnetoresistance read head with narrow shield-to-shield spacing
US9269382B1 (en) 2012-06-29 2016-02-23 Western Digital (Fremont), Llc Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities
US9213322B1 (en) 2012-08-16 2015-12-15 Western Digital (Fremont), Llc Methods for providing run to run process control using a dynamic tuner
US8984740B1 (en) 2012-11-30 2015-03-24 Western Digital (Fremont), Llc Process for providing a magnetic recording transducer having a smooth magnetic seed layer
US9053719B2 (en) 2012-11-30 2015-06-09 Western Digital (Fremont), Llc Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof
US8980109B1 (en) 2012-12-11 2015-03-17 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a combined main pole and side shield CMP for a wraparound shield scheme
US8760818B1 (en) 2013-01-09 2014-06-24 Western Digital (Fremont), Llc Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys
US9042208B1 (en) 2013-03-11 2015-05-26 Western Digital Technologies, Inc. Disk drive measuring fly height by applying a bias voltage to an electrically insulated write component of a head
US9336814B1 (en) 2013-03-12 2016-05-10 Western Digital (Fremont), Llc Inverse tapered waveguide for use in a heat assisted magnetic recording head
US8883017B1 (en) 2013-03-12 2014-11-11 Western Digital (Fremont), Llc Method and system for providing a read transducer having seamless interfaces
US9111564B1 (en) 2013-04-02 2015-08-18 Western Digital (Fremont), Llc Magnetic recording writer having a main pole with multiple flare angles
US9013836B1 (en) 2013-04-02 2015-04-21 Western Digital (Fremont), Llc Method and system for providing an antiferromagnetically coupled return pole
US9104107B1 (en) 2013-04-03 2015-08-11 Western Digital (Fremont), Llc DUV photoresist process
US8993217B1 (en) 2013-04-04 2015-03-31 Western Digital (Fremont), Llc Double exposure technique for high resolution disk imaging
US9245545B1 (en) 2013-04-12 2016-01-26 Wester Digital (Fremont), Llc Short yoke length coils for magnetic heads in disk drives
US9064527B1 (en) 2013-04-12 2015-06-23 Western Digital (Fremont), Llc High order tapered waveguide for use in a heat assisted magnetic recording head
US9070381B1 (en) 2013-04-12 2015-06-30 Western Digital (Fremont), Llc Magnetic recording read transducer having a laminated free layer
US9431047B1 (en) 2013-05-01 2016-08-30 Western Digital (Fremont), Llc Method for providing an improved AFM reader shield
US9064528B1 (en) 2013-05-17 2015-06-23 Western Digital Technologies, Inc. Interferometric waveguide usable in shingled heat assisted magnetic recording in the absence of a near-field transducer
US9431039B1 (en) 2013-05-21 2016-08-30 Western Digital (Fremont), Llc Multiple sensor array usable in two-dimensional magnetic recording
US9263067B1 (en) 2013-05-29 2016-02-16 Western Digital (Fremont), Llc Process for making PMR writer with constant side wall angle
US9361913B1 (en) 2013-06-03 2016-06-07 Western Digital (Fremont), Llc Recording read heads with a multi-layer AFM layer methods and apparatuses
US9406331B1 (en) 2013-06-17 2016-08-02 Western Digital (Fremont), Llc Method for making ultra-narrow read sensor and read transducer device resulting therefrom
US9287494B1 (en) 2013-06-28 2016-03-15 Western Digital (Fremont), Llc Magnetic tunnel junction (MTJ) with a magnesium oxide tunnel barrier
US9318130B1 (en) 2013-07-02 2016-04-19 Western Digital (Fremont), Llc Method to fabricate tunneling magnetic recording heads with extended pinned layer
US8923102B1 (en) 2013-07-16 2014-12-30 Western Digital (Fremont), Llc Optical grating coupling for interferometric waveguides in heat assisted magnetic recording heads
US8947985B1 (en) 2013-07-16 2015-02-03 Western Digital (Fremont), Llc Heat assisted magnetic recording transducers having a recessed pole
US9275657B1 (en) 2013-08-14 2016-03-01 Western Digital (Fremont), Llc Process for making PMR writer with non-conformal side gaps
US9431032B1 (en) 2013-08-14 2016-08-30 Western Digital (Fremont), Llc Electrical connection arrangement for a multiple sensor array usable in two-dimensional magnetic recording
US9042051B2 (en) 2013-08-15 2015-05-26 Western Digital (Fremont), Llc Gradient write gap for perpendicular magnetic recording writer
US9343098B1 (en) 2013-08-23 2016-05-17 Western Digital (Fremont), Llc Method for providing a heat assisted magnetic recording transducer having protective pads
US9343086B1 (en) 2013-09-11 2016-05-17 Western Digital (Fremont), Llc Magnetic recording write transducer having an improved sidewall angle profile
US9441938B1 (en) 2013-10-08 2016-09-13 Western Digital (Fremont), Llc Test structures for measuring near field transducer disc length
US9042058B1 (en) 2013-10-17 2015-05-26 Western Digital Technologies, Inc. Shield designed for middle shields in a multiple sensor array
US9349394B1 (en) 2013-10-18 2016-05-24 Western Digital (Fremont), Llc Method for fabricating a magnetic writer having a gradient side gap
US9214172B2 (en) 2013-10-23 2015-12-15 Western Digital (Fremont), Llc Method of manufacturing a magnetic read head
US9007719B1 (en) 2013-10-23 2015-04-14 Western Digital (Fremont), Llc Systems and methods for using double mask techniques to achieve very small features
US8988812B1 (en) 2013-11-27 2015-03-24 Western Digital (Fremont), Llc Multi-sensor array configuration for a two-dimensional magnetic recording (TDMR) operation
US9194692B1 (en) 2013-12-06 2015-11-24 Western Digital (Fremont), Llc Systems and methods for using white light interferometry to measure undercut of a bi-layer structure
US9280990B1 (en) 2013-12-11 2016-03-08 Western Digital (Fremont), Llc Method for fabricating a magnetic writer using multiple etches
US9001628B1 (en) 2013-12-16 2015-04-07 Western Digital (Fremont), Llc Assistant waveguides for evaluating main waveguide coupling efficiency and diode laser alignment tolerances for hard disk
US8917581B1 (en) 2013-12-18 2014-12-23 Western Digital Technologies, Inc. Self-anneal process for a near field transducer and chimney in a hard disk drive assembly
US9082423B1 (en) 2013-12-18 2015-07-14 Western Digital (Fremont), Llc Magnetic recording write transducer having an improved trailing surface profile
US8971160B1 (en) 2013-12-19 2015-03-03 Western Digital (Fremont), Llc Near field transducer with high refractive index pin for heat assisted magnetic recording
US9147408B1 (en) 2013-12-19 2015-09-29 Western Digital (Fremont), Llc Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field
US8970988B1 (en) 2013-12-31 2015-03-03 Western Digital (Fremont), Llc Electric gaps and method for making electric gaps for multiple sensor arrays
US9305583B1 (en) 2014-02-18 2016-04-05 Western Digital (Fremont), Llc Method for fabricating a magnetic writer using multiple etches of damascene materials
US9183854B2 (en) 2014-02-24 2015-11-10 Western Digital (Fremont), Llc Method to make interferometric taper waveguide for HAMR light delivery
US9202493B1 (en) 2014-02-28 2015-12-01 Western Digital (Fremont), Llc Method of making an ultra-sharp tip mode converter for a HAMR head
US9142233B1 (en) 2014-02-28 2015-09-22 Western Digital (Fremont), Llc Heat assisted magnetic recording writer having a recessed pole
US9396743B1 (en) 2014-02-28 2016-07-19 Western Digital (Fremont), Llc Systems and methods for controlling soft bias thickness for tunnel magnetoresistance readers
US8988825B1 (en) 2014-02-28 2015-03-24 Western Digital (Fremont, LLC Method for fabricating a magnetic writer having half-side shields
US9153255B1 (en) 2014-03-05 2015-10-06 Western Digital (Fremont), Llc Method for fabricating a magnetic writer having an asymmetric gap and shields
US9001467B1 (en) 2014-03-05 2015-04-07 Western Digital (Fremont), Llc Method for fabricating side shields in a magnetic writer
US9135930B1 (en) 2014-03-06 2015-09-15 Western Digital (Fremont), Llc Method for fabricating a magnetic write pole using vacuum deposition
US9934811B1 (en) 2014-03-07 2018-04-03 Western Digital (Fremont), Llc Methods for controlling stray fields of magnetic features using magneto-elastic anisotropy
US9190085B1 (en) 2014-03-12 2015-11-17 Western Digital (Fremont), Llc Waveguide with reflective grating for localized energy intensity
US9111558B1 (en) 2014-03-14 2015-08-18 Western Digital (Fremont), Llc System and method of diffractive focusing of light in a waveguide
US9135937B1 (en) 2014-05-09 2015-09-15 Western Digital (Fremont), Llc Current modulation on laser diode for energy assisted magnetic recording transducer
US8976635B1 (en) 2014-06-10 2015-03-10 Western Digital (Fremont), Llc Near field transducer driven by a transverse electric waveguide for energy assisted magnetic recording
US8958272B1 (en) 2014-06-10 2015-02-17 Western Digital (Fremont), Llc Interfering near field transducer for energy assisted magnetic recording
US8953422B1 (en) 2014-06-10 2015-02-10 Western Digital (Fremont), Llc Near field transducer using dielectric waveguide core with fine ridge feature
US9007879B1 (en) 2014-06-10 2015-04-14 Western Digital (Fremont), Llc Interfering near field transducer having a wide metal bar feature for energy assisted magnetic recording
US9508363B1 (en) 2014-06-17 2016-11-29 Western Digital (Fremont), Llc Method for fabricating a magnetic write pole having a leading edge bevel
US9361914B1 (en) 2014-06-18 2016-06-07 Western Digital (Fremont), Llc Magnetic sensor with thin capping layer
US9053735B1 (en) 2014-06-20 2015-06-09 Western Digital (Fremont), Llc Method for fabricating a magnetic writer using a full-film metal planarization
US9214169B1 (en) 2014-06-20 2015-12-15 Western Digital (Fremont), Llc Magnetic recording read transducer having a laminated free layer
US9042052B1 (en) 2014-06-23 2015-05-26 Western Digital (Fremont), Llc Magnetic writer having a partially shunted coil
US9230565B1 (en) 2014-06-24 2016-01-05 Western Digital (Fremont), Llc Magnetic shield for magnetic recording head
US9190079B1 (en) 2014-09-22 2015-11-17 Western Digital (Fremont), Llc Magnetic write pole having engineered radius of curvature and chisel angle profiles
US9007725B1 (en) 2014-10-07 2015-04-14 Western Digital (Fremont), Llc Sensor with positive coupling between dual ferromagnetic free layer laminates
US9087527B1 (en) 2014-10-28 2015-07-21 Western Digital (Fremont), Llc Apparatus and method for middle shield connection in magnetic recording transducers
US9786301B1 (en) 2014-12-02 2017-10-10 Western Digital (Fremont), Llc Apparatuses and methods for providing thin shields in a multiple sensor array
US9111550B1 (en) 2014-12-04 2015-08-18 Western Digital (Fremont), Llc Write transducer having a magnetic buffer layer spaced between a side shield and a write pole by non-magnetic layers
US9721595B1 (en) 2014-12-04 2017-08-01 Western Digital (Fremont), Llc Method for providing a storage device
US9236560B1 (en) 2014-12-08 2016-01-12 Western Digital (Fremont), Llc Spin transfer torque tunneling magnetoresistive device having a laminated free layer with perpendicular magnetic anisotropy
US9286919B1 (en) 2014-12-17 2016-03-15 Western Digital (Fremont), Llc Magnetic writer having a dual side gap
US9881638B1 (en) 2014-12-17 2018-01-30 Western Digital (Fremont), Llc Method for providing a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) device
US9214165B1 (en) 2014-12-18 2015-12-15 Western Digital (Fremont), Llc Magnetic writer having a gradient in saturation magnetization of the shields
US9741366B1 (en) 2014-12-18 2017-08-22 Western Digital (Fremont), Llc Method for fabricating a magnetic writer having a gradient in saturation magnetization of the shields
US10074387B1 (en) 2014-12-21 2018-09-11 Western Digital (Fremont), Llc Method and system for providing a read transducer having symmetric antiferromagnetically coupled shields
US9343087B1 (en) 2014-12-21 2016-05-17 Western Digital (Fremont), Llc Method for fabricating a magnetic writer having half shields
US9437251B1 (en) 2014-12-22 2016-09-06 Western Digital (Fremont), Llc Apparatus and method having TDMR reader to reader shunts
US9449625B1 (en) 2014-12-24 2016-09-20 Western Digital (Fremont), Llc Heat assisted magnetic recording head having a plurality of diffusion barrier layers
US9123374B1 (en) 2015-02-12 2015-09-01 Western Digital (Fremont), Llc Heat assisted magnetic recording writer having an integrated polarization rotation plate
US9312064B1 (en) 2015-03-02 2016-04-12 Western Digital (Fremont), Llc Method to fabricate a magnetic head including ion milling of read gap using dual layer hard mask
US9431031B1 (en) 2015-03-24 2016-08-30 Western Digital (Fremont), Llc System and method for magnetic transducers having multiple sensors and AFC shields
US9443541B1 (en) 2015-03-24 2016-09-13 Western Digital (Fremont), Llc Magnetic writer having a gradient in saturation magnetization of the shields and return pole
US9449621B1 (en) 2015-03-26 2016-09-20 Western Digital (Fremont), Llc Dual free layer magnetic reader having a rear bias structure having a high aspect ratio
US9384763B1 (en) 2015-03-26 2016-07-05 Western Digital (Fremont), Llc Dual free layer magnetic reader having a rear bias structure including a soft bias layer
US9245562B1 (en) 2015-03-30 2016-01-26 Western Digital (Fremont), Llc Magnetic recording writer with a composite main pole
US9147404B1 (en) 2015-03-31 2015-09-29 Western Digital (Fremont), Llc Method and system for providing a read transducer having a dual free layer
US9263071B1 (en) 2015-03-31 2016-02-16 Western Digital (Fremont), Llc Flat NFT for heat assisted magnetic recording
US9508372B1 (en) 2015-06-03 2016-11-29 Western Digital (Fremont), Llc Shingle magnetic writer having a low sidewall angle pole
US9508365B1 (en) 2015-06-24 2016-11-29 Western Digital (Fremont), LLC. Magnetic reader having a crystal decoupling structure
US9530443B1 (en) 2015-06-25 2016-12-27 Western Digital (Fremont), Llc Method for fabricating a magnetic recording device having a high aspect ratio structure
US9842615B1 (en) 2015-06-26 2017-12-12 Western Digital (Fremont), Llc Magnetic reader having a nonmagnetic insertion layer for the pinning layer
US9646639B2 (en) 2015-06-26 2017-05-09 Western Digital (Fremont), Llc Heat assisted magnetic recording writer having integrated polarization rotation waveguides
US9431038B1 (en) 2015-06-29 2016-08-30 Western Digital (Fremont), Llc Method for fabricating a magnetic write pole having an improved sidewall angle profile
US9472216B1 (en) 2015-09-23 2016-10-18 Western Digital (Fremont), Llc Differential dual free layer magnetic reader
US9666214B1 (en) 2015-09-23 2017-05-30 Western Digital (Fremont), Llc Free layer magnetic reader that may have a reduced shield-to-shield spacing
US9424866B1 (en) 2015-09-24 2016-08-23 Western Digital (Fremont), Llc Heat assisted magnetic recording write apparatus having a dielectric gap
US9384765B1 (en) 2015-09-24 2016-07-05 Western Digital (Fremont), Llc Method and system for providing a HAMR writer having improved optical efficiency
US9595273B1 (en) 2015-09-30 2017-03-14 Western Digital (Fremont), Llc Shingle magnetic writer having nonconformal shields
US9484051B1 (en) 2015-11-09 2016-11-01 The Provost, Fellows, Foundation Scholars and the other members of Board, of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin Method and system for reducing undesirable reflections in a HAMR write apparatus
US9953670B1 (en) 2015-11-10 2018-04-24 Western Digital (Fremont), Llc Method and system for providing a HAMR writer including a multi-mode interference device
US10037770B1 (en) 2015-11-12 2018-07-31 Western Digital (Fremont), Llc Method for providing a magnetic recording write apparatus having a seamless pole
US9812155B1 (en) 2015-11-23 2017-11-07 Western Digital (Fremont), Llc Method and system for fabricating high junction angle read sensors
US9564150B1 (en) 2015-11-24 2017-02-07 Western Digital (Fremont), Llc Magnetic read apparatus having an improved read sensor isolation circuit
US9754611B1 (en) 2015-11-30 2017-09-05 Western Digital (Fremont), Llc Magnetic recording write apparatus having a stepped conformal trailing shield
US9799351B1 (en) 2015-11-30 2017-10-24 Western Digital (Fremont), Llc Short yoke length writer having assist coils
US9740805B1 (en) 2015-12-01 2017-08-22 Western Digital (Fremont), Llc Method and system for detecting hotspots for photolithographically-defined devices
US9767831B1 (en) 2015-12-01 2017-09-19 Western Digital (Fremont), Llc Magnetic writer having convex trailing surface pole and conformal write gap
US9858951B1 (en) 2015-12-01 2018-01-02 Western Digital (Fremont), Llc Method for providing a multilayer AFM layer in a read sensor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3485334A (en) 1968-03-13 1969-12-23 William F Sheperd Co Release means having plural arms engaging same coin
JPS57204111A (en) 1981-06-10 1982-12-14 Hitachi Ltd Forming method for magnetic thin-film pattern
US5669133A (en) 1992-08-25 1997-09-23 Seagate Technology, Inc. Method of making a magnetoresistive sensor
US5475550A (en) 1992-08-25 1995-12-12 Seagate Technology, Inc. Enhanced cross-talk suppression in magnetoresistive sensors
MY108956A (en) 1992-11-12 1996-11-30 Quantum Peripherals Colorado Inc Magnetoresistive device and method having improved barkhausen noise suppression
US5435053A (en) 1994-03-02 1995-07-25 International Business Machines Corporation Simplified method of making merged MR head
KR0153311B1 (en) 1994-04-06 1998-12-15 가나이 쯔도무 Magnetoresistive thin-film magnetic head and the method of fabrication
US5467881A (en) 1994-06-28 1995-11-21 International Business Machines Corporation Method of manufacturing an MR read head which eliminates lead-to-shield shorts at the ABS of the MR read head
US5557491A (en) * 1994-08-18 1996-09-17 International Business Machines Corporation Two terminal single stripe orthogonal MR head having biasing conductor integral with the lead layers
JP2694806B2 (en) 1994-08-29 1997-12-24 日本電気株式会社 Magnetoresistive element and method of manufacturing the same
US5568335A (en) 1994-12-29 1996-10-22 International Business Machines Corporation Multi-layer gap structure for high resolution magnetoresistive read head
US5664316A (en) 1995-01-17 1997-09-09 International Business Machines Corporation Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer
US5495378A (en) 1995-01-30 1996-02-27 Seagate Technology, Inc. Magnetoresistive sensor with improved performance and processability
US5608593A (en) 1995-03-09 1997-03-04 Quantum Peripherals Colorado, Inc. Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
JPH08287422A (en) 1995-04-07 1996-11-01 Alps Electric Co Ltd Magnetoresistance effect head
US5658469A (en) 1995-12-11 1997-08-19 Quantum Peripherals Colorado, Inc. Method for forming re-entrant photoresist lift-off profile for thin film device processing and a thin film device made thereby
US5739987A (en) 1996-06-04 1998-04-14 Read-Rite Corporation Magnetoresistive read transducers with multiple longitudinal stabilization layers

Also Published As

Publication number Publication date
US6445553B2 (en) 2002-09-03

Similar Documents

Publication Publication Date Title
US6445553B2 (en) Method and system for fabricating a high density magnetoresistive device
US6943993B2 (en) Magnetic recording head with a side shield structure for controlling side reading of thin film read sensor
US7027274B1 (en) Spin-dependent tunneling read/write sensor for hard disk drives
US6118638A (en) CPP magnetoresistive device and method for making same
US5637235A (en) Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
US6657825B2 (en) Self aligned magnetoresistive flux guide read head with exchange bias underneath free layer
US6103136A (en) Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)
US6074566A (en) Thin film inductive write head with minimal organic insulation material and method for its manufacture
US10157634B2 (en) Magnetic reader sensor with shield spacing improvement and better pin flip robustness
JP2000123325A (en) Method and device for providing spin-dependent tunnelling effect into reading head
US6785954B2 (en) Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor
US20080043378A1 (en) Pedestals for use as part of magnetic read heads
US20090266790A1 (en) Method of making a magnetoresistive reader structure
US6510030B1 (en) Transducing head and method for forming a recessed shield for a transducing head
US7405908B2 (en) Magnetic head with improved free magnetic layer biasing for thinner CPP sensor stack
US6228276B1 (en) Method of manufacturing magnetoresistive (MR) sensor element with sunken lead structure
US7346977B2 (en) Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height
US7773349B2 (en) Tunnel MR head with long stripe height sensor stabilized through the shield
US7768749B2 (en) Tunnel MR head with long stripe height stabilized through side-extended bias layer
US6600637B1 (en) Edge barrier to prevent spin valve sensor corrosion and improve long term reliability
US6919280B2 (en) Method of removing magnetoresistive sensor cap by reactive ion etching
US6798622B2 (en) Magnetoresistive (MR) sensor element with sunken lead structure
US6907654B2 (en) Method of manufacturing spin valve film
US6428714B1 (en) Protective layer for continuous GMR design
US6757142B1 (en) Magnetoresistive effect element with a magnetic sensing region and outside regions thereof, and manufacturing method of the element

Legal Events

Date Code Title Description
AS Assignment

Owner name: READ-RITE CORPORATION, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BARR, RONALD;ROTTMAYER, ROBERT E.;REEL/FRAME:009888/0476;SIGNING DATES FROM 19990303 TO 19990326

AS Assignment

Owner name: TENNENBAUM CAPITAL PARTNERS, LLC, CALIFORNIA

Free format text: SECURITY INTEREST;ASSIGNOR:READ-RITE CORPORATION;REEL/FRAME:013616/0399

Effective date: 20021224

AS Assignment

Owner name: WESTERN DIGITAL (FREMONT), INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:READ-RITE CORPORATION;REEL/FRAME:014506/0765

Effective date: 20030731

AS Assignment

Owner name: READ-RITE CORPORATION, CALIFORNIA

Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:TENNENBAUM CAPITAL PARTNERS, LLC;REEL/FRAME:014499/0476

Effective date: 20030731

AS Assignment

Owner name: GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT, CA

Free format text: SECURITY INTEREST;ASSIGNORS:WESTERN DIGITAL TECHNOLOGIES, INC.;WESTERN DIGITAL (FREMONT), INC.;REEL/FRAME:014830/0957

Effective date: 20030919

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: WESTERN DIGITAL TECHNOLOGIES, INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT;REEL/FRAME:020599/0489

Effective date: 20070809

Owner name: WESTERN DIGITAL (FREMONT), INC., CALIFORNIA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:GENERAL ELECTRIC CAPITAL CORPORATION, AS AGENT;REEL/FRAME:020599/0489

Effective date: 20070809

FPAY Fee payment

Year of fee payment: 8

REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20140903

AS Assignment

Owner name: WESTERN DIGITAL TECHNOLOGIES, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:WESTERN DIGITAL (FREMONT), LLC;REEL/FRAME:050450/0582

Effective date: 20190508