TWM507432U - Linear vapor deposition device capable of increasing utilization rate of vapor deposition material - Google Patents

Description

Linear vapor deposition device capable of increasing the utilization rate of vapor deposition materials

This creation is about the field of vapor deposition equipment, especially a linear evaporation apparatus that can effectively increase the utilization rate of vapor deposition materials.

At present, industries such as organic light-emitting diodes (OLEDs) and thin film solar cells are often produced by an evaporation process. Generally, the vapor deposition process is applied to a vacuum system, such as placing a material to be placed in a reaction chamber. In the body, a vacuum pump is used to maintain the internal pressure, and then the vapor deposition material is placed in the vapor deposition container, and the vapor deposition material is heated by the heater to vaporize and evaporate the vapor deposition material to reach the material to be plated. The purpose of forming a film on it.

The vapor deposition process is mass-produced, and is often carried out by linear evaporation to obtain a large-area film, such as the following US Patent No. 7,194,197 B1 for preparing an absorption layer in a copper indium gallium selenide thin film solar cell. US2008/0247738A1, US2008/0247737A1, US2008/0226270A1, US2010/0173440A1, US2010/0087016A1, US2009/0258476A1, US2009/0258444A1, US2009/0255469A1, US2009/0255467A1, US8,202,368B2, US2010/0159132A1 and US2010/0285218A1, etc. The literature discloses that when preparing a film, the vapor generated by the linear evaporation source of the different evaporation materials is effectively mixed, and then mixed with a vapor of a reaction type such as selenium vapor, sulfur vapor or helium vapor or a vapor thereof. Producing a reaction to obtain a large-area and uniform composition film, in the process, multiple sets of independent linear evaporation sources are often separated from the reactive evaporation source, but in the vapor deposition process In the process, the effective utilization rate of the vapor deposition material often faces the problems as described below. One is that the evaporation angle of the linear vapor deposition source will be uneven with the evaporation distance of the center point, and the plating area will be uneven. During the mixed evaporation process of the plating zone, the evaporation angle of the linear evaporation source and the process temperature may interfere with each other, so that the uniformity of the formed film is greatly reduced. If the uniformity of the evaporation is increased, the evaporation must be performed. The unevenness is generated to shield the plated area to achieve better uniformity, but this method will reduce the effective use rate of the vapor deposition material; the second is the commonly used linear evaporation source such as copper, indium or gallium. Etc., the temperature in the process exceeds 1000 °C, in order to avoid the influence of the thermal field generated by the linear vapor deposition source such as copper, indium or gallium with high temperature, and the multiple independent linear vapor deposition sources and reactions. The gas vapor deposition source is placed at a position that has a structural barrier effect. The introduced reaction vapor must fill the entire reaction chamber to make it mix with the vaporization source of a linear evaporation source such as copper, indium or gallium. Reacts with the reaction vapor. However, although a large amount of the reaction vapor is introduced to fill the reaction chamber, the reaction vapor which actually participates in the reaction in the plating zone is limited, because most of the reaction vapor will condense in the cold. The wall of the cavity is either evacuated by the vacuum pump, which greatly reduces the utilization rate of the reactive vapor deposition material.

Therefore, in order to improve the above problems, the present invention proposes a linear vapor deposition device which can effectively increase the utilization rate of the vapor deposition material, thereby increasing the utilization rate of the vapor deposition material to reduce the production cost.

One of the purposes of this creation is to provide a linear vapor deposition device that can improve the utilization rate of vapor deposition materials, which is applied to a mixed evaporation process, which can effectively increase the utilization rate of the vapor deposition material and reduce the production cost, and is aimed at various phases. The different elements are heated, and the individual material vapors are mixed in a sealed space through a mixing chamber according to a desired ratio, and then passed through a high temperature adiabatic sealed space to cause a vaporization effect of the introduced reactive vapor deposition material to form a smaller cracking effect. Molecular group, thereby improving The quality of the film.

In order to achieve the above object, the linear vapor deposition device capable of improving the utilization rate of the vapor deposition material has a reaction chamber for performing a coating process for a substrate, wherein the reaction chamber has at least one heat insulating cavity. The adiabatic chamber has a linear evaporation source, and uniformly mixes the vapor of the linear evaporation source through a mixing chamber, and the adiabatic chamber system introduces a vapor of the reactive evaporation material to make the linear evaporation source vapor When the mixing chamber is dissipated, it reacts with the vapor of the reactive vapor deposition material and is simultaneously ejected from the adiabatic chamber to perform coating on the substrate.

Wherein, the linear evaporation source comprises a plurality of crucibles and a plurality of plating heaters, and the mixing chamber system is connected to the openings of the crucibles, and the crucibles are respectively provided with a plating material and are transparently Corresponding to the plating heaters, heating is performed to generate steam, and a side of the mixing chamber communicating with the crucibles is provided with a plurality of restricting holes, and a linear vapor deposition opening is formed on the opposite side of the mixing chamber.

In addition, the heat insulating cavity is composed of a plurality of insulating side plates, a top insulating plate and a bottom insulating plate, and the top insulating plate is provided with at least one vapor deposition port for the linear evaporation source steam and the reaction steaming. The vapor of the plating material is sprayed together to perform a coating process on the substrate. Preferably, the reactive vapor deposition source is one of selenium, sulfur or antimony or a mixture thereof.

In this way, the creation system can effectively improve the utilization rate of various different vapor deposition materials, avoid the situation that the material consumption cannot be effectively utilized due to factors such as the preparation environment or temperature, and improve the film quality while reducing the process materials. cost.

1‧‧‧Linear evaporation device that can increase the utilization rate of vapor deposition materials

10‧‧‧Reaction chamber

11‧‧‧Insulation chamber

111‧‧‧Insulated side panels

112‧‧‧Top insulation board

1121‧‧‧ evaporation port

113‧‧‧Bottom insulation board

114‧‧‧Import

12‧‧‧Hybrid cavity

121‧‧‧Limited orifice

122‧‧‧Linear evaporation opening

13‧‧‧Linear evaporation source

131‧‧‧ Shabu Shabu

132‧‧‧ plating heater

133‧‧‧ plating materials

14‧‧‧Reactive evaporation

2‧‧‧Substrate

Figure 1 is a cross-sectional view (I) of the structure of the preferred embodiment of the present invention.

Fig. 2 is a cross-sectional view showing the structure of the preferred embodiment of the present invention (2).

Figure 3 is a schematic view showing the crystal structure of a film produced by the present authoring device.

Fig. 4 is a schematic view showing the crystal structure of the film produced by the authoring apparatus under another preparation condition.

Figure 5 is a schematic diagram showing the crystal structure of a film prepared by another method under the conditions of the present invention, compared with the crystal structure of a film prepared in a conventional manner.

In order for your review board to have a clear understanding of the content of this creation, please use the following instructions to match the drawings.

Please refer to Figures 1 and 2, which are schematic cross-sectional views of respective structures of the preferred embodiment of the present invention. A linear vapor deposition device 1 for improving the utilization rate of a vapor deposition material has a reaction chamber 10 for performing a coating process for a substrate 2.

The linear vapor deposition device 1 for improving the utilization rate of the evaporation material is characterized in that the reaction chamber 10 has at least one heat insulation chamber 11 having a linear evaporation source 13 therein and transmitting through the same The mixing chamber 12 uniformly mixes the vapor of the linear evaporation source 13 , and each of the adiabatic chambers 11 is introduced into a vapor of the reactive evaporation material 14 , so that the linear evaporation source 13 vapor is dispersed from the mixing chamber 12 . At the time of the reaction, the reaction vapor deposition material 14 vapor is reacted and simultaneously ejected from the heat insulating chamber 11 to perform coating on the substrate. Preferably, the reactive vapor deposition material 14 is selenium (Se). One of or a mixture of sulfur (S) or antimony (Sb), whereby the vapor of the reactive vapor deposition material 14 is confined in the space of the adiabatic cavity 11, so that the reactive vapor deposition material 14 is The vapor reacts with the vapor of the linear vapor deposition source 13 uniformly mixed through the mixing chamber 12, thereby effectively increasing the utilization rate of the vapor deposition material and reducing the production cost.

The linear vapor deposition source 13 includes a plurality of crucibles 131 and a plurality of plating heaters 132, and the mixing chambers 12 are connected to the openings of the crucibles 131, and the crucibles 131 are respectively installed. A plating material 133 is disposed, and each of the plating material heaters 132 is sleeved on the outside of each of the crucibles 131 to heat the plating materials 133 to generate steam, and the mixing chamber 12 is connected to the crucibles. The side of the 131 is opposite to the opening of the crucible 131 and is provided with a plurality of restricting holes 121, and has a linear vapor deposition opening 122 on the opposite side of the mixing chamber 12 for the vapor of the plating material 133 in the mixing chamber. The body 12 is uniformly mixed and discharged into the interior of the heat insulating chamber 11 in a desired ratio, and reacts with the vapor of the reactive vapor deposition material 14, wherein, in particular, the heat insulating chamber 11 is inside the coating process. The film is in a continuous heating state, so that the high-temperature environment in the adiabatic chamber 11 causes the vaporization of the vapor-deposited material 14 introduced into the reaction to form a smaller molecular group, so that the formed film is more uniform and higher. Densification, etc., to achieve the improvement of film quality . In addition, preferably, the heat insulating cavity 11 is composed of a plurality of heat insulating side plates 111, a top heat insulating plate 112 and a bottom heat insulating plate 113, and at least one vapor deposition port 1121 is provided on the top heat insulating plate 112 to transmit The linear vapor deposition source 13 vapor and the vapor deposition material 14 vapor uniformly mixed in the mixing chamber 12 are ejected from the vapor deposition port 1121 to perform a coating operation on the substrate 2. The vapor deposition port 1121 may be provided in plural, at least one of the vapor deposition ports 1121 is for the vapor of the linear vapor deposition source 13 to flow, and at least one of the vapor deposition ports 1121 is for the vapor of the reactive vapor deposition material 14 . Flowing out from the adiabatic chamber 11 and performing a coating operation on the substrate 2 in the reaction chamber 10. In this embodiment, three vapor deposition ports 1121 are provided, and the vapor deposition ports are provided. 1121 is arranged in parallel, wherein the vapor deposition ports 1121 are for the vapor of the reactive vapor deposition material 14 to flow out, and the other vapor deposition port 1121 is for the linear steaming uniformly mixed through the mixing chamber 12. The vapor of the plating source 13 flows out, and since the vapor deposition ports 1121 are arranged in parallel, FIG. 1 is self-located in the center. The vapor deposition port 1121 has a cross-sectional view, so that only the vapor of the linear vapor deposition source 13 is visible. FIG. 2 clearly shows the arrangement of the vapor deposition ports 1121 and the linear evaporation source 13 and the reactive vapor deposition. The vapor flow of the material 14 is. In addition, the reaction type vapor deposition material 14 can be introduced from the bottom or the side of the heat insulating chamber 11. Therefore, the bottom heat insulating plate 113 or one of the heat insulating side plates 111 has an introduction port 114 corresponding thereto. In the example, the vapor of the reaction type vapor deposition material 14 flows from the introduction port 114 of the bottom heat insulating plate 113 as an example. As shown in FIG. 1 and FIG. 2, the reactive vapor deposition material 14 flows into the heat insulating chamber 11 from the inlet 114, and is ejected from the vapor deposition port 1121, and the linear vapor deposition source 13 The vapor is uniformly mixed into the heating chamber 11 through the mixing chamber 12, and is ejected from one of the vapor deposition ports 1121 to coat the substrate 2 together with the vapor of the reactive vapor deposition material 14. .

The following is a description and analysis of the coating process for the application of this creation. Please also refer to Figure 3, which is a schematic diagram of the crystal structure of the film produced by the present authoring device. In the present embodiment, the linear vapor deposition source 13 includes two crucibles 131, and the plating material 133 of indium (In) and gallium (Ga) is placed in the crucibles 131, respectively. The internal system is in a vacuum state, and the pressure is controlled to be about 1×10 ^-6 Torr, and the area of the restricting hole 121 of the crucible 131 corresponding to the gallium is placed, and the area of the restricting hole 121 of the crucible 131 corresponding to the indium is placed. The ratios are 2, 2.1, 2.2, 2.3, and 2.4, respectively, and the film numbers made corresponding to the above area ratios are sequentially A, B, C, D, and E. The vapor deposition port 1121 is an opening having a length of 25 cm and a width of 2 mm. The temperature of the plating material heater 132 is set to 1200 ° C, and the reactive vapor deposition material 14 is selenium, and the temperature thereof is 250 ° C to 400. °C, the substrate 2 is a glass plate-like structure having a thickness of 3 mm and an area of 30 cm*30 cm. The distance between the linear vapor deposition source 13 and the substrate is 30 cm, and the process time is 10 minutes. When the vapor deposition process is performed, the plate heaters 132 respectively heat the crucible 131 of the crucible 131 and the gallium carrying the indium, and the generated vapor flows into the mixing chamber through the corresponding restriction hole 121. In the body 12, after being uniformly mixed and discharged from the linear vapor deposition opening 122, the vapor of the reactive vapor deposition material 14 filled in the interior of the heat insulating chamber 11 is mixed with the vapor deposition port 1121. The substrate 2 is sprayed to be sprayed. After the film is formed, the composition of the indium gallium selenide film layer is analyzed by an X-ray fluorescence spectrometer. As shown in Table 1, the area of the current limiting hole 121 corresponding to the gallium material, and the current limiting hole 121 of the corresponding indium material. The area ratio of the area controls the ratio of gallium/(indium + gallium) composition [Ga/(In+Ga)] is 0.2~0.4, and the indium gallium selenide compound film obtained by general vapor deposition of selenium is a polycrystalline phase structure, and the above conditions are passed. The prepared indium gallium selenide compound film was analyzed by an X-ray diffraction analyzer, and as shown in FIG. 3, (In, Ga) ₂ Se ₃ (006) was obtained by the indium gallium selenide film produced by the present invention. The crystal structure, therefore, the film structure produced by the present invention can obtain better crystallization effect, the compactness is high, the film surface is flat and has a single crystal phase film property, and can be effectively utilized by the high stability of the film. It is implemented in various fields such as solar cells of CIGS.

The following is a description and analysis of the coating using the linear vapor deposition apparatus 1 which can improve the utilization rate of the evaporation material according to the present invention under another preparation condition, and please refer to Figures 4 and 5, respectively. The schematic diagram of the crystal structure of the film produced by the authoring device under another preparation condition, and the film crystal structure prepared by the authoring apparatus under another preparation condition are compared with the crystal structure of the film prepared in a general manner. In this embodiment, the linear evaporation source 13 includes three crucibles 131, and the plating material 133 such as indium, gallium, and copper (Cu) is placed, and the reaction chamber 10 is in a vacuum state and the pressure is controlled. Approximately 1×10 ^-6 Torr, and the area ratio of the current limiting holes 121 corresponding to the crucibles 131 carrying gallium and indium is fixed to 2.2, and corresponding to the area of the current limiting hole 121 of the crucible 131 carrying copper, The sum of the areas of the current limiting holes 121 corresponding to the crucible 131 carrying the indium and the gallium 131 of the gallium also has an area ratio of 5, 7.5 and 10, respectively, and the film numbers of the corresponding area ratios are sequentially For F, G and H. The vapor deposition port 1121 is also an opening having a length of 25 cm and a width of 2 mm as in the above embodiment. The temperature of the plating material heater 132 is set to 1200 ° C. The reactive vapor deposition material 14 is selenium, and the temperature is 250. The substrate 2 is a glass plate-like structure having a thickness of 3 mm and an area of 30 cm*30 cm. The distance between the linear vapor deposition source 13 and the substrate is 30 cm, and the process time is 10 minutes. In the same manner as in the previous process embodiment, when the vapor deposition process is performed, the plate heaters 132 respectively heat the crucibles 131 carrying the plating materials 133, and the generated vapors are respectively corresponding to the current limiting flows. The hole 121 is mixed into the mixing chamber 12, and the uniformly mixed vapor is discharged from the linear vapor deposition opening 122, and is mixed with the vapor of the reactive vapor deposition material 14 filled in the heat insulating chamber 11. Then, the vapor deposition port 1121 is ejected to deposit the substrate 2. After the film is formed, the composition of the copper indium gallium selenide film can be known by using an X-ray fluorescence spectrometer, and as shown in Table 2, the current limit of the current limiting hole 121 and the corresponding indium material are fixed by fixing the corresponding gallium material. The area ratio of the hole 121 is changed, and the area ratio of the area of the corresponding restricting hole 121 corresponding to the copper material to the sum of the areas of the corresponding indium holes and the corresponding limiting holes 121 of the corresponding gallium material is changed, and the ratio of [Cu/(In+Ga)] is controlled. At 0.8~0.9, the prepared copper indium gallium selenide compound film was analyzed by X-ray diffraction analyzer. As shown in Fig. 4, Cu(In, Ga)Se ₂ (220/204) was obtained. A preferred crystalline structure is preferred. As shown in FIG. 5, the comparative example line segments shown in the figure represent the crystal structure of the copper indium gallium selenide compound film obtained by general vapor deposition of selenium, which is a polycrystalline (112) preferred direction crystal structure, and the embodiment line segment represents The copper indium gallium selenide compound film prepared by the present invention is a preferred direction crystal structure of Cu(In,Ga)Se ₂ (220/204), so the film structure produced by the present invention has a better crystallization effect. It can be effectively implemented in various fields such as solar cells of CIGS by virtue of its high stability and uniformity.

However, the above descriptions are only for the preferred embodiment of the present invention and are not intended to limit the scope of the present invention; therefore, the equivalent changes and modifications made without departing from the spirit and scope of the present invention should be Within the scope of this creation's patent.

1‧‧‧Linear evaporation device that can increase the utilization rate of vapor deposition materials

10‧‧‧Reaction chamber

11‧‧‧Insulation chamber

111‧‧‧Insulated side panels

112‧‧‧Top insulation board

1121‧‧‧ evaporation port

113‧‧‧Bottom insulation board

114‧‧‧Import

12‧‧‧Hybrid cavity

121‧‧‧Limited orifice

122‧‧‧Linear evaporation opening

13‧‧‧Linear evaporation source

131‧‧‧ Shabu Shabu

132‧‧‧ plating heater

133‧‧‧ plating materials

14‧‧‧Reactive evaporation

2‧‧‧Substrate

Claims (4)

The invention relates to a linear vapor deposition device capable of improving the utilization rate of an evaporation material, which has a reaction chamber for performing a coating process for a substrate, wherein the reaction chamber has at least one heat insulation chamber, and the heat insulation chamber has a line. a vapor deposition source, and uniformly mixing the vapor of the linear evaporation source through a mixing chamber, and introducing the vapor of the reactive evaporation material into the adiabatic cavity system, so that the linear evaporation source vapor is emitted from the mixing cavity And reacting with the vapor of the reactive vapor deposition material and ejecting from the adiabatic cavity to perform coating on the substrate, wherein a plurality of current limiting holes are disposed on a side of the mixing cavity connected to the linear evaporation source. And having a linear evaporation opening on the opposite side of the mixing chamber. The linear vapor deposition device capable of improving the utilization rate of the vapor deposition material according to the first aspect of the patent application, wherein the linear evaporation source comprises a plurality of crucibles and a plurality of plating heaters, and the mixing chamber system is connected At the opening of the crucibles, the crucibles are respectively provided with a plating material and heated by the corresponding plating heaters to generate steam. The linear vapor deposition device capable of improving the utilization rate of the vapor deposition material according to the second aspect of the patent application, wherein the heat insulation cavity is composed of a plurality of heat insulation side plates, a top insulation plate and a bottom insulation plate, and is at the top The heat insulating plate is provided with at least one vapor deposition port. A linear vapor deposition device capable of increasing the utilization rate of a vapor deposition material according to the third aspect of the invention, wherein the reactive vapor deposition material is one of selenium, sulfur or antimony or a mixture thereof.