TWM500998U - Bidirectional LED and the lighting device thereof - Google Patents

Description

Two-way light emitting diode and illumination device thereof

The invention relates to a light-emitting diode, in particular to a two-way light-emitting diode and a lighting device thereof.

In recent years, based on the evolution of technology, the application of light-emitting diodes has been greatly improved; among them, the development of AC-type light-emitting diodes is the most significant. Since the AC type light-emitting diode is easy to use, it has become a new darling of a large number of global manufacturers to invest in research and development. However, AC-type LEDs are mostly high-power LEDs that must be operated at high currents. In addition, the substrate (eg, sapphire) used to deflect the semiconductor layer of the light-emitting diode has a low thermal conductivity, so that the high heat generated by the light-emitting diode under high-power driving is accumulated in the second. On the substrate of the polar body. In order to solve the problem that the heat dissipation of the substrate is not easy, the technical field has also developed a flip-chip structure of a flip chip LED to solve the problem of heat dissipation.

Referring to FIG. 1 , the new patent case of the Republic of China No. I419359 Approved Announcement No. discloses a conventional AC flip chip LED 1 comprising an integrated circuit board 11, a first LED chip 12, and a second illumination. The diode chip 13, a first bump group 14, and a second bump group 15.

The integrated circuit board 11 includes a pair of left side diodes 111 and a pair of right side diodes that are laterally spaced apart from each other on the surface of the integrated circuit board 11. 112. An insulating layer 113 disposed on the surface of the integrated circuit board 11 between the pair of left side diodes 111 and the pair of right side diodes 112, and a contact block 114 disposed on the insulating layer 113. The pair of left diodes 111 are disposed in a laterally and horizontally mirror-symmetrical manner, and the pair of right-hand diodes 112 are also disposed symmetrically and horizontally symmetrically with each other, and each of the left-side diodes 111 and each of the right-side diodes 112 has a shape as shown in FIG. 1 . One of the P-type semiconductors and one N-type semiconductor is shown.

The first LED chip 12 and the second LED chip 13 each include a transparent substrate 121, 131, a semiconductor epitaxial layer 122, 132, an N-type electrode layer 125, 135, and a P-type Electrode layers 126, 136. Each of the semiconductor epitaxial layers 122, 132 is disposed on each of the transparent substrates 121, 131 and has a platform 123, 133 and a stud 124, 134 adjacent to the platforms 123, 133. Each of the N-type electrode layers 125, 135 contacts each of the stages 123, 133, and each of the P-type electrode layers 126, 136 contacts the respective posts 124, 134.

The first bump group 14 has an N-type bump 141 connected to the contact block 114 of the integrated circuit board 11, and a P-type bump 142 connecting the pair of left diodes 111 of the integrated circuit board 11. . The second bump group 15 has an N-type bump 151 connected to the pair of right side diodes 112 of the integrated circuit board 11, and a P-type bump 152 connected to the contact block 114 of the integrated circuit board 11. . The first LED wafer 12 and the second LED wafer 13 are flipped 180° and then passed through a flip chip process to form the first LED wafer 12 . The N-type electrode layer 125 and the P-type electrode layer 126 are respectively connected to the N-type bump 141 and the P-type bump 142 of the first bump group 14 and make the N-type of the second LED wafer 13 Electricity The pole layer 135 and the P-type electrode layer 136 are respectively connected to the N-type bump 151 and the P-type bump 152 of the second bump group 15.

When the integrated circuit board 11 is connected to an alternating current power source, the alternating current power source supplies a bidirectional current to the pair of left side diodes 111 and the pair of right side diodes 112 to enable the light emitting diode chips 12, 13 A series circuit is formed through the first bump group 14, the contact block 114 on the integrated circuit board 11, and the second bump group 15, so that the bidirectional current flows through the LED chips 12, respectively. The semiconductor epitaxial layers 122, 132 of 13 are such that the respective semiconductor epitaxial layers 122, 132 are respectively illuminated to emit light from the respective transparent substrates 121, 131, respectively.

Although the existing AC flip chip LED 1 can solve the problem of heat dissipation. However, since the light-emitting diode chips 12 and 13 are connected in series, once the light-emitting diode chips 12 and 13 of the light-emitting diode chips 12 and 13 fail, the bidirectional current cannot be made to flow. Therefore, when the existing AC-type flip-chip LED 1 is further applied to a lighting device, the failure rate of the lighting device is also increased. In addition, as is apparent from the structure shown in FIG. 1, since there is a height difference between the platforms 123, 133 of the semiconductor epitaxial layers 122, 132 of the respective LED chips 12, 13 and the posts 124, 134, in order to achieve the overlying For the purpose of the crystal, it is still necessary to compensate for the height difference by thickening the electrode layers, or even the bump groups 14, 15. In terms of process cost, both the thickened electrode layers or the bump sets 14, 15 increase consumables and time costs. As far as the yield on the process is concerned, the existing AC-type flip-chip diode 1 has a complicated procedure, and the bump groups 14 and 15 are still needed; therefore, the process yield is also derived. The problem of falling.

According to the above description, in view of the demand of the AC type light-emitting diode, the problem of heat dissipation and failure rate of the light-emitting diode can be solved, and the cost of consumables and time can be reduced and the process yield can be maintained. The problem that the relevant technical personnel are to break through.

Therefore, the object of the present invention is to provide a two-way light emitting diode.

Another object of the present invention is to provide a bidirectional light emitting diode illumination device.

Therefore, the two-way light emitting diode of the present invention comprises a light transmissive substrate, a light emitting unit and two metal conductive layers. The light emitting unit is disposed on the light transmissive substrate and includes at least one first light emitting die and at least one second light emitting die. The first illuminating crystal grains and the second illuminating crystal grains are spaced apart from each other in a first direction. The first light emitting die and the second light emitting die respectively have a first type semiconductor layer, an active layer and a second type semiconductor layer. The first type of semiconductor layer and the first type of semiconductor layer of the second illuminating die are respectively disposed on the transparent substrate, and respectively have a platform and a protrusion adjacent to the platform. The first light emitting die and the active layer of the second light emitting die are respectively disposed on the respective platforms. The first light-emitting die and the second-type semiconductor layer of the second light-emitting die are respectively disposed on the active layers, and are not in contact with the pillars of the first-type semiconductor layers. A top surface of each of the second type semiconductor layers is substantially equal in height to a top surface of the pillars of each of the first type semiconductor layers. In the present invention, the first type of semiconductor layer of the first luminescent crystal grain The platform extends from a stud in a second direction, and the platform of the first type semiconductor layer of the second illuminating die extends from the stud in a direction opposite to the second direction, the first direction and the second direction Clip each other at a predetermined angle. The metal conductive layers are respectively disposed on the first light emitting die and the second light emitting die, and are respectively connected to the top surface of the pillar of the first type semiconductor layer of the first light emitting die and the second light emitting die The top surface of the second type semiconductor layer and the top surface of the second type semiconductor layer of the first light emitting die and the top surface of the pillar of the first type semiconductor layer of the second light emitting die.

In addition, the two-way LED lighting device of the present invention comprises a circuit board and a plurality of the above two-way light emitting diodes. The circuit board includes a thermally conductive plate body and a conductive line. The conductive circuit has a plurality of contacts disposed on a surface of the heat conductive plate body, and the two-way light emitting diodes are disposed on the conductive line. The metal conductive layers of the two-way LEDs are respectively attached to each two adjacent contacts, and each two adjacent two-way LEDs share the same contact. In the present invention, the two-way light-emitting diodes are sequentially connected to each other after power supply through the metal conductive layers of the two-way light-emitting diodes and the contacts.

The effect of the present invention is that the top surface of each of the second type semiconductor layers is substantially higher than the top surface of the pillars of the first type of semiconductor layers, in addition to facilitating the light-emitting diode through the flip chip process to solve the heat dissipation problem. It also avoids the need for additional consumables (bumps) and process man-hours, which reduces costs and simplifies process and increases process yield.

2‧‧‧Two-way light-emitting diode

20‧‧‧Transparent substrate

21‧‧‧First luminescent crystal

211‧‧‧First type semiconductor layer

212‧‧‧ active layer

213‧‧‧Second type semiconductor layer

214‧‧‧current diffusion metal layer

215‧‧‧ platform

216‧‧‧Bump

22‧‧‧second luminescent crystal

221‧‧‧First type semiconductor layer

222‧‧‧ active layer

223‧‧‧Second type semiconductor layer

224‧‧‧current diffused metal layer

225‧‧‧ platform

226‧‧‧Bump

23‧‧‧Metal conductive layer

24‧‧‧Insulators

25‧‧‧ trench

4‧‧‧ boards

41‧‧‧thermal plate body

42‧‧‧Electrical circuit

421‧‧‧Contacts

422‧‧‧First external node

423‧‧‧Second external node

424‧‧‧ wire

5‧‧‧ constant current unit

51‧‧‧ constant current parts

9‧‧‧AC power supply

X‧‧‧ first direction

Y‧‧‧second direction

Other features and effects of the novel will be referred to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial cross-sectional view illustrating a conventional AC flip chip LED; FIG. 2 is a top plan view illustrating a first implementation of the novel bidirectional LED Figure 3 is a front elevational view of Figure 2; Figure 4 is a right side view of Figure 2; Figure 5 is a front elevational view of Figure 2; Figure 6 is a top plan view illustrating the two-way two-way illumination A second embodiment of the polar body; FIG. 7 is a top plan view showing a first embodiment of the novel bidirectional light emitting diode illumination device; FIG. 8 is a partial cross section taken along line VIII-VIII of FIG. FIG. 9 is an equivalent circuit diagram illustrating the multiple bidirectional light emitting diodes of the first embodiment of the novel bidirectional light emitting diode illumination device connected in series with each other; FIG. 10 is a top plan view illustrating the novel two-way light emitting diode A second embodiment of the polar body illumination device; and FIG. 11 is an equivalent circuit diagram illustrating that the plurality of bidirectional light emitting diodes of the second embodiment of the novel bidirectional light emitting diode illumination device are connected in series with each other.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 2, FIG. 3 and FIG. 4, a first embodiment of the novel bidirectional LED 2 includes a transparent substrate 20, a light emitting unit, Two metal conductive layers 23 and one insulator 24.

The light emitting unit is disposed on the transparent substrate 20 and includes at least one first light emitting die 21 and at least one second light emitting die 22 . In this embodiment, the number of the first illuminating crystal grains 21 and the second illuminating crystal grains 22 are respectively taken as an example. The first illuminating die 21 and the second illuminating die 22 are spaced apart from each other along a first direction X, and a trench 25 is defined between the first illuminating die 21 and the second illuminating die 22 . The insulator 24 is filled in the trench 25. The first illuminating die 21 and the second illuminating die 22 are completely separated by the insulator 24 to avoid the problem of short circuit when the circuit is turned on.

Referring to FIG. 2, FIG. 3 and FIG. 4, and referring to FIG. 5, the first illuminating die 21 and the second illuminating die 22 respectively have a first type semiconductor layer 211, 221 and an active layer 212. 222, a second type semiconductor layer 213, 223, and a current spreading metal layer 214, 224.

The first type of semiconductor layers 211 and 221 of the second illuminating dies 21 and the second illuminating dies 22 are disposed on the transparent substrate 20 and have a platform 215, 225 and a neighboring platform. The protrusions 216, 226 of 215, 225. The active layers 212 and 222 of the first light-emitting die 21 and the second light-emitting die 22 are respectively disposed on the respective platforms 215 and 225. The second type of semiconductor layers 213 and 223 of the second light-emitting die 21 and the second light-emitting die 22 are respectively disposed on the active layers 212 and 222, and are not aligned with the pillars of the first-type semiconductor layers 211 and 221 216,226 contact. In addition, a top surface of the first light-emitting die 21 and the second-type semiconductor layers 213, 223 of the second light-emitting die 22, and a pillar of the first-type semiconductor layer 211, 221 A top surface of 216, 226 is substantially equal. The current spreading metal layers 214, 224 are respectively disposed on the second type semiconductors 213, 223. In this embodiment, the transparent substrate 20, the first semiconductor layers 211 and 221, the light emitting layers 212 and 222, and the second semiconductor layers 213 and 223 are respectively a sapphire substrate for epitaxy. An n-GaN layer, an (InGaN/GaN) n multilayer film, and a p-GaN layer are taken as an example; in addition, the first light-emitting die 21 and the light source emitted by the second light-emitting die 22, The light of the same predetermined wavelength band is taken as an example for illustration.

Preferably, the platform 215 of the first type semiconductor layer 211 of the first light emitting die 21 extends from the protrusion 216 in a second direction Y, and the first type semiconductor layer 221 of the second light emitting die 22 The platform 225 extends from the protrusion 226 opposite to the second direction Y (as shown in FIG. 5); in addition, the first illuminating crystal 21 and the first OLED 211 of the second illuminating dies 22 The heights of the protrusions 216 and 226 of the second light-emitting diodes 21 and 215 and 225 of the first-type semiconductor layers 211 and 221 of the first light-emitting crystal grains 21 and the second light-emitting crystal grains 22 are respectively 215 and 225. The height is between 55μm and 65μm. Further, the first direction X and the second direction Y are sandwiched by a predetermined angle. In this embodiment, the first direction X and the second direction Y are perpendicular to each other, and the predetermined angle is equal to 90°.

Preferably, each platform 215, 225 has a roughened surface for better illumination. Thereby, the contact area between each of the first type semiconductor layers 211 and 221 and the active layers 212 and 222 is increased, thereby improving the light emitting efficiency of the first light emitting crystal grains 21 and the second light emitting crystal grains 22. Of course, when the novel two-way LED 2 is applied to illumination When the brightness required by the device is not high, the roughened surfaces may be omitted.

The metal conductive layers 23 are respectively disposed on the first light-emitting die 21 and the second light-emitting die 22, and are respectively connected to the top surface of the pillar 216 of the first-type semiconductor layer 211 of the first light-emitting die 21 The top surface of the second type semiconductor layer 223 of the second light emitting die 22, and the top surface of the second type semiconductor layer 213 of the first light emitting die 21 and the first type semiconductor layer 221 of the second light emitting die 22 The top of the stud 226. Each of the current diffusion metal layers 214 and 224 extends toward the platforms 215 and 225 of the first semiconductor layers 211 and 221 to connect the metal conductive layers 23, respectively.

As can be seen from the above detailed description, the present invention is based on the special epitaxial protrusions of the first type semiconductor layers 211 and 221 of the respective light-emitting crystal layers 21 and 22 which are higher than the top surfaces of the second-type semiconductor layers 213 and 223. The structure is advantageous for the light-emitting diode to avoid the extra cost and process to configure the bumps to achieve the same effect when the light-emitting diode is passed through the flip chip process to solve the heat dissipation problem. Therefore, the cost of consumables and time can be reduced, and the yield can be improved by the simplification of the process.

Moreover, the present invention is also based on the advantages of the special epitaxial structure described above. According to the structure shown in FIG. 2, the connection relationship between the metal conductive layer 23 and the first light-emitting die 21 and the second light-emitting die 22 is known. Not only can these light-emitting dies 21, 22 be connected in parallel at the same time. In addition, referring to FIG. 2, the P-type semiconductor layer of the first light-emitting die 21 (ie, the second-type semiconductor layer 213) is located on the right side, and the P-type semiconductor layer of the second light-emitting die 22 (ie, the first The second type semiconductor layer 223) is located on the left side. Therefore, the current flow directions of the first light-emitting die 21 and the second light-emitting die 22 are respectively from right to Left and left to right. In general, the two-way LED 2 can be illuminated directly by an alternating current without using a rectifier.

More specifically, referring to FIG. 2, when a reverse current (ie, opposite to the second direction Y) current (not shown) flows through the bidirectional LED 2, the reverse current flows. The current diffusion metal layer 214, the second type semiconductor layer 213, the active layer 212, and the first type semiconductor layer sequentially flow through the first conductive crystal grain 21 through the metal conductive layer 23 (the metal conductive layer 23 on the right side). The stud 216 of the 211 and the metal conductive layer 23 (the metal conductive layer 23 on the left side) radiate the light of the same predetermined wavelength band and are transmitted to the outside through the transparent substrate 20. At the same time, the second luminescent die 22 is in a non-conducting state. Similarly, when a forward current (ie, the same direction to the second direction Y) current (not shown) flows through the two-way LED 2, the forward current is transmitted through the metal. The layer 23 (the metal conductive layer 23 on the left side) sequentially flows through the current diffusion metal layer 224, the second type semiconductor layer 223, the active layer 222, and the pillar 226 of the first type semiconductor layer 221 of the second light emitting die 22 And the metal conductive layer 23 (the metal conductive layer 23 on the right side) emits light of the same predetermined wavelength band and is transmitted to the outside through the transparent substrate 20. At the same time, the first luminescent crystal 21 is in a non-conducting state.

As can be seen from the above, the bidirectional diode 2 can obtain a polarity-independent and bi-directional characteristic through a special epitaxial structure. Therefore, it is applicable to a light modulator in addition to a circuit suitable for an AC power source of a lighting device. What is more worth mentioning here is that based on the characteristics of the double-conductivity, it is sealed. It is not necessary to distinguish the polarity of the light-emitting diodes in the mounting process, and therefore, it also brings convenience to the packaging process.

Referring to FIG. 6, a second embodiment of the bidirectional light-emitting diode 2 of the present invention is substantially the same as the first embodiment, except that the first light-emitting die 21 in the light-emitting unit is The number of the second light-emitting dies 22 is two. As shown in FIG. 6 , the first light-emitting die 21 and the second light-emitting die 22 of the second embodiment of the two-way LED 2 are alternately arranged along the first direction X, but may also be Along the first direction X is arranged at intervals.

It should be further noted that the top surface of the pillars 216 and 226 of the first type semiconductor layers 211 and 221 of the light-emitting crystal grains 21 and 22 is higher than the top surfaces of the second-type semiconductor layers 213 and 223. And a geometric arrangement relationship in which the first illuminating crystal grains 21 and the stages 215 and 225 of the first type semiconductor layers 211 and 221 of the second illuminating crystal grains 22 extend in opposite directions to each other. Therefore, the connection relationship between the metal conductive layers 23 and the first light-emitting crystal grains 21 and the second light-emitting crystal grains 22 (see FIG. 6) can be directly and simplely produced in the process of producing the light-emitting diodes. The first light-emitting dies 21 and the second luminescent crystal grains 22 are simultaneously connected in parallel through the metal conductive layers 23 (ie, four light-emitting dies are simultaneously connected in parallel). In the second embodiment of the bidirectional light-emitting diode 2 of the present invention, the two first light-emitting crystal chips 21 and the two second light-emitting crystal grains 22 are taken as an example for illustration. However, according to the structural design of the present invention, it is more convenient to simultaneously connect two or more first illuminating dies 21 and second illuminating dies 22 (not shown).

Referring to FIG. 7, FIG. 8 and FIG. 9, the two-way light emitting diode of the present invention A first embodiment of the body lighting device is electrically connected to an AC power supply 9. The first embodiment of the bidirectional light emitting diode illumination device comprises a circuit board 4 and a plurality of bidirectional light emitting diodes 2 as described in the first embodiment. It should be noted that, in the first embodiment of the two-way LED lighting device of the present invention, the number of the two-way LEDs is illustrated by six, but the present invention does not Limited to.

The circuit board 4 includes a thermally conductive plate body 41 and a conductive line 42. The conductive line 42 has a plurality of contacts 421 spaced apart from each other on a surface of the thermally conductive plate body 41 along the second direction Y, a first external node 422, a second external node 423, and a wire 424. The first external node 422 and the second external node 423 are electrically connected to the two contacts 421 of the other contacts 421, respectively. As shown in FIG. 7 and FIG. 8 , the two contacts 421 in the contacts 421 refer to the leftmost contact 421 and the rightmost contact 421 . More specifically, the first external node 422 is connected to the leftmost contact 421; the second external node 423 is electrically connected to the rightmost contact 421 through the wire 424 (that is, the wire 424 is connected to the rightmost contact 421, and extends from the rightmost contact 421 toward the inside of the thermal conductive plate body 41, and extends opposite to the second direction Y to the adjacent leftmost contact 421. To penetrate the surface of the thermal conductive plate body 41 to be connected to the second external node 423.

The two-way LEDs 2 are flipped 180° to form the state shown in FIG. 7 , and are disposed on the conductive line 42 through a flip chip process, and the metals of the two-way LEDs 2 . The conductive layer 23 is respectively attached to each two adjacent contacts 421, and each two adjacent two-way LEDs 2 share the same Contacts 421.

In the first embodiment of the two-way LED lighting device of the present invention, the AC power supply 9 is in communication with the first external node 422 and the second external node 423, and the AC current is from the AC power supply 9 Each of the contacts 421 of the conductive line 42 is sequentially passed through the first external node 422, and flows through the two-way light-emitting diodes 2 through the metal conductive layers 23 to sequentially order the same The two-way LEDs 2 are connected in series with each other, and sequentially flow from the rightmost contact 421 through the wire 424 and the second external node 423 to flow into the AC power supply 9 from the second external node 423, thereby forming A complete circuit as shown in Figure 9. In addition, in the first embodiment of the novel bidirectional light emitting diode illumination device, the reverse current of the alternating current (inverse to the second direction Y) and the forward current (the same direction to the second direction Y) The operation is described in the first embodiment of the bidirectional LED 2, and the reverse current and forward current are also transmitted through the bidirectional LED 2 and the conductive line 42 on the circuit board 4. The connection relationship is reversed from the second direction Y and the same direction to the second direction Y, and the same illumination operation is repeated in the two-way LEDs 2, and no further description is made here.

It should be additionally noted here that the first embodiment of the bidirectional light-emitting diode of the present invention further comprises a constant current unit 5. The constant current unit 5 is disposed on the surface of the thermal conductive plate body 41 and is connected and electrically connected to two adjacent contacts 421 at the most central position among the contacts 421 to be at the center position. The two adjacent contacts 421 are such that the two-way LEDs 2 and the constant current unit 5 are connected in series with each other. The constant current unit 5 has two mutual A constant current member 51 arranged in parallel. Each of the constant current elements 51 is configured to stabilize the forward current and the reverse current of the alternating current, thereby preventing the two-way light-emitting diodes 2 from being input unsteadily due to the alternating current, thereby causing the brightness of the light to flicker. Dark phenomenon.

According to the detailed description of the first embodiment of the two-way LED illumination device, the present invention is based on the special epitaxial structure, so that the bidirectional LEDs 2 can be easily transmitted through the circuit board 4. The conductive lines 42 are connected in series with each other, and can not only achieve the equivalent of the AC high voltage or the low voltage lighting, but also do not need to use the voltage regulator to step down, or even use the bridge stack circuit to convert the DC, and do not need to use the capacitor. Therefore, the usage of many circuit components is saved, the space for using the circuit board 4 is saved, and the cost is reduced.

Referring to FIG. 10 and FIG. 11 together with FIG. 6, a second embodiment of the bidirectional LED device of the present invention is substantially the same as the first embodiment of the bidirectional LED illumination device. It is to be noted that the two-way light-emitting diodes 2 are the two-way light-emitting diodes 2 as described in the second embodiment.

Similarly, the top surface of the pillars 216 and 226 of the first type semiconductor layers 211 and 221 of the light-emitting crystal grains 21 and 22 is higher than the top surfaces of the second-type semiconductor layers 213 and 223, and the first light-emitting layers. The geometrical arrangement of the grains 21 and the stages 215, 225 of the first type semiconductor layers 211, 221 of the respective second light emitting grains 22 are opposite to each other. Therefore, the metal conductive layers 23 can easily simultaneously connect the first light-emitting dies 21 and the second light-emitting dies 22 (ie, simultaneously connect four light-emitting dies). So when the exchange When the current is circulated, the overall brightness of the two-way LED illumination device can be improved.

In addition, the present invention is further based on the parallel relationship imparted by the special epitaxial structure, such that once the first illuminating dies 21 and the second illuminating dies 22 of the bidirectional light emitting diodes 2 connected in series with each other When any of the illuminating dies 21, 22 fails, the forward current and the reverse current of the alternating current can automatically select the illuminating dies 21, 22 that have not failed as a bypass, so that The forward current and the reverse alternating current can continue to circulate. Thereby, the failure rate of the two-way LED lighting device can be reduced.

In summary, the novel bidirectional light emitting diode and the illumination device thereof have the special epitaxial structure (ie, contour design), and each of the first light emitting crystal grains 21 and each of the second light emitting crystal grains 22 The platforms 215 and 225 of the first type semiconductor layers 211 and 221 are in a reversely extending geometric arrangement relationship, and in addition to facilitating the heat dissipation problem through the flip chip process, the additional consumables (bumps) and process time can be avoided. In order to reduce the cost and simplify the process, thereby improving the process yield; in addition, the special epitaxial structure and the geometric arrangement relationship can further improve the number of the first and second illuminating dies 21 and 22 in parallel. The two-way LEDs 2 connected in series with each other through the conductive lines 42 of the circuit board 4 can also reduce the two-way LED illuminating device by using the parallel relationship between the first and second illuminating dies 21 and 22 The failure rate, so it can achieve the purpose of this new type.

However, the above is only an embodiment of the present invention, and it is not possible to limit the scope of the implementation of the present invention. The simple equivalent changes and modifications made by the scope of the patent and the contents of the patent specification are still within the scope of this new patent.

2‧‧‧Two-way light-emitting diode

21‧‧‧First luminescent crystal

213‧‧‧Second type semiconductor

214‧‧‧current diffusion metal layer

216‧‧‧Bump

22‧‧‧second luminescent crystal

223‧‧‧Second type semiconductor layer

224‧‧‧current diffused metal layer

226‧‧‧Bump

23‧‧‧Metal conductive layer

24‧‧‧Insulators

25‧‧‧ trench

X‧‧‧ first direction

Y‧‧‧second direction

Claims (7)

A bidirectional light emitting diode comprising: a light transmissive substrate; a light emitting unit disposed on the light transmissive substrate and comprising at least one first light emitting die and at least one second light emitting die, the first The illuminating dies and the second illuminating dies are spaced apart from each other in a first direction, and the first illuminating dies and the second illuminating dies respectively have a first type of semiconductor layer disposed on the transparent substrate And having a platform and a protruding pillar adjacent to the platform, an active layer disposed on the platform, and a second type semiconductor layer disposed on the active layer and not adjacent to the first type semiconductor layer Contacting the pillars, a top surface of the second type semiconductor layer is substantially equal to a top surface of the pillars of the first type semiconductor layer, wherein a terrace of the first type semiconductor layer of the first light emitting die is Extending from a second pillar in a second direction, the platform of the first type semiconductor layer of the second light emitting die extends from the pillar opposite to the second direction, the first direction and the second direction Sandwich each other at a predetermined angle; and two gold And a conductive layer disposed on the first light emitting die and the second light emitting die, respectively, and connecting the top surface of the pillar of the first type semiconductor layer of the first light emitting die and the second light emitting die a top surface of the second type semiconductor layer and a top surface of the second type semiconductor layer of the first light emitting grain a top surface of the stud of the first type semiconductor layer of the second light emitting grain. The two-way light emitting diode of claim 1, wherein each of the platforms has a roughened surface. The bidirectional light emitting diode according to claim 1, further comprising an insulator, and a trench is defined between the first light emitting die and the second light emitting die, and the insulator is filled in the trench. The two-way light emitting diode of claim 1, wherein the first light emitting die and the second light emitting die further have a current spreading metal layer, and each current diffusing metal layer is respectively disposed in each second type. On the semiconductor layer, and extending to the platform of each of the first type semiconductor layers to respectively connect the metal conductive layers. The bidirectional light emitting diode of claim 1, wherein the heights of the first light emitting die and the first semiconductor layer of the second light emitting die are between 100 μm and 120 μm, respectively. The heights of the first light-emitting die and the land of the first-type semiconductor layer of the second light-emitting die are between 55 μm and 65 μm, respectively. The bidirectional light emitting diode according to claim 1, wherein the number of the first light emitting crystal grains and the second light emitting crystal grains in the light emitting unit are two. A bidirectional light emitting diode lighting device comprising: a circuit board comprising a heat conducting plate body; and a conductive circuit having a plurality of contacts spaced apart from a surface of the heat conducting plate body; and A plurality of two-way light-emitting diodes according to any one of claims 1 to 6, which are disposed on the conductive line, and the metal conductive layers of the two-way light-emitting diodes are respectively attached to each two adjacent a contact point, and each two adjacent two-way light emitting diodes share the same contact; wherein the metal conductive layers of the two-way light emitting diode and the contacts are sequentially arranged to sequentially emit the two-way light emitting diodes They are connected in series after being powered.