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TWI780648B - Photosensitive element, and method of forming resist pattern - Google Patents

Photosensitive element, and method of forming resist pattern Download PDF

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TWI780648B
TWI780648B TW110112219A TW110112219A TWI780648B TW I780648 B TWI780648 B TW I780648B TW 110112219 A TW110112219 A TW 110112219A TW 110112219 A TW110112219 A TW 110112219A TW I780648 B TWI780648 B TW I780648B
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photosensitive element
resin composition
composition layer
photosensitive resin
film
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TW202142962A (en
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加持義貴
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日商旭化成股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/064Photoresists

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本發明提供一種可兼顧解像性之提高與捲取時之皺褶防止之感光性元件、及抗蝕圖案之形成方法。 本發明之感光性元件之特徵在於:其係依序具有支持膜(A)、感光性樹脂組合物層(B)及保護膜(C)者,且由JIS B0601-2001規定的支持膜(A)之與感光性樹脂組合物層(B)相接之側之面的表面粗糙度RzA1 (nm)、支持膜(A)之與相接於感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度RzA2 (nm)、保護膜(C)之與感光性樹脂組合物層相接之側之面的表面粗糙度RzC1 (nm)、保護膜(C)之與相接於感光性樹脂組合物層之側為相反側之面的表面粗糙度RzC2 (nm)滿足以下(1)~(3): (1)1<RzA1 <100 (2)300<RzC1 <600 (3)40<RzC2 /RzA2The present invention provides a photosensitive element and a method for forming a resist pattern that can achieve both improvement in resolution and prevention of wrinkles during winding. The photosensitive element of the present invention is characterized in that it has a support film (A), a photosensitive resin composition layer (B) and a protective film (C) in sequence, and the support film (A) specified by JIS B0601-2001 ), the surface roughness Rz A1 (nm) of the surface of the side that is in contact with the photosensitive resin composition layer (B), and the side of the support film (A) that is in contact with the photosensitive resin composition layer (B) is The surface roughness Rz A2 (nm) of the surface on the opposite side, the surface roughness Rz C1 (nm) of the surface of the side of the protective film (C) in contact with the photosensitive resin composition layer, the ratio of the protective film (C) and The surface roughness Rz C2 (nm) of the side opposite to the photosensitive resin composition layer satisfies the following (1)-(3): (1) 1<Rz A1 <100 (2)300<Rz C1 <600 (3)40<Rz C2 /Rz A2 .

Description

感光性元件、及抗蝕圖案之形成方法Photosensitive element and method for forming resist pattern

本發明係關於一種感光性元件、及抗蝕圖案之形成方法。The invention relates to a photosensitive element and a method for forming a resist pattern.

於個人電腦或行動電話等電子機器中,印刷配線板等被用於安裝零件或半導體等。作為印刷配線板等之製造用之抗蝕劑,先前使用有於支持膜上積層感光性樹脂組合物層,進而於該感光性樹脂組合物層上視需要積層保護膜而成之感光性元件(感光性樹脂積層體),即所謂之乾膜抗蝕劑(例如,參照專利文獻1、專利文獻2)。In electronic devices such as personal computers and mobile phones, printed wiring boards, etc. are used to mount components and semiconductors. As resists for the production of printed wiring boards, etc., conventionally used photosensitive elements in which a photosensitive resin composition layer is laminated on a support film, and a protective film is further laminated on the photosensitive resin composition layer if necessary ( photosensitive resin laminate), so-called dry film resist (for example, refer to Patent Document 1 and Patent Document 2).

於此種感光性元件中,為了提高解像性,較佳為使用會遮斷曝光之光之內部異物較少之高品質膜作為支持膜。 [先前技術文獻] [專利文獻]In such a photosensitive element, in order to improve the resolution, it is preferable to use a high-quality film with less internal foreign matter that blocks the light of exposure as a support film. [Prior Art Literature] [Patent Document]

[專利文獻1]日本專利特開2004-191648號公報 [專利文獻2]日本專利特開2019-188612號公報[Patent Document 1] Japanese Patent Laid-Open No. 2004-191648 [Patent Document 2] Japanese Patent Laid-Open No. 2019-188612

[發明所欲解決之問題][Problem to be solved by the invention]

然而,由於高品質膜之表面粗糙度較小,故而當積層感光性樹脂組合物層及保護膜並捲取成卷狀時,與保護膜接觸之界面上摩擦力變得過高,導致皺褶產生。However, since the surface roughness of the high-quality film is small, when the photosensitive resin composition layer and the protective film are laminated and wound up into a roll, the friction force at the interface contacting the protective film becomes too high, causing wrinkles produce.

本發明係鑒於此種先前之實際情況而提出者,其目的在於提供一種可兼顧解像性之提高與捲取時之皺褶防止之感光性元件、及抗蝕圖案之形成方法。 [解決問題之技術手段]The present invention has been made in view of such prior circumstances, and an object of the present invention is to provide a photosensitive element and a method for forming a resist pattern that can achieve both improvement in resolution and prevention of wrinkles during winding. [Technical means to solve the problem]

本發明人等發現,藉由以下技術手段,可解決上述問題。 [1] 一種感光性元件,其特徵在於:其係依序具有支持膜(A)、感光性樹脂組合物層(B)及保護膜(C)者,且 由JIS B0601-2001規定的上述支持膜(A)之與上述感光性樹脂組合物層(B)相接之側之面的表面粗糙度RzA1 (nm)、上述支持膜(A)之與相接於上述感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度RzA2 (nm)、上述保護膜(C)之與上述感光性樹脂組合物層(B)相接之側之面的表面粗糙度RzC1 (nm)、及上述保護膜(C)之與相接於上述感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度RzC2 (nm)滿足以下(1)~(3): (1)1<RzA1 <100 (2)300<RzC1 <600 (3)40<RzC2 /RzA2 。 [2] 如[1]所記載之感光性元件,其中1<RzA2 <200。 [3] 如[1]或[2]所記載之感光性元件,其中1.1<RzA2 /RzA1 <7。 [4] 如[1]至[3]中任一項所記載之感光性元件,其中1.1<RzC2 /RzC1 <10。 [5] 如[1]至[4]中任一項所記載之感光性元件,其中50<RzC2 /RzA2 <100。 [6] 如[1]至[5]中任一項所記載之感光性元件,其中上述支持膜(A)中所含之直徑2 μm以上5 μm以下之粒子之個數為30個/30 mm2 以下。 [7] 如[1]至[6]中任一項所記載之感光性元件,其中上述支持膜(A)中所含之直徑2 μm以上5 μm以下之粒子之個數為15個/30 mm2 以下。 [8] 如[1]至[7]中任一項所記載之感光性元件,其中上述支持膜(A)中所含之直徑2 μm以上5 μm以下之粒子之個數為10個/30 mm2 以下。 [9] 如[1]至[8]中任一項所記載之感光性元件,其中上述支持膜(A)中所含之鈦元素含量為1 ppm以上20 ppm以下。 [10] 如[1]至[9]中任一項所記載之感光性元件,其中對上述支持膜(A)之至少單面實施有平滑化處理。 [11] 如[1]至[10]中任一項所記載之感光性元件,其中上述支持膜(A)之膜厚為5 μm以上16 μm以下。 [12] 如[1]至[11]中任一項所記載之感光性元件,其中上述保護膜(C)之表面包含聚丙烯樹脂。 [13] 一種感光性元件之捲繞體,其係將如[1]至[12]中任一項所記載之感光性元件捲繞而成。 [14] 一種抗蝕圖案之形成方法,其包括: 積層步驟,其於基板上積層如[1]至[12]中任一項所記載之感光性元件; 曝光步驟,其對該感光性元件之感光性樹脂組合物層進行曝光;及 顯影步驟,其將該感光性樹脂組合物層之未曝光部顯影去除。 [15] 如[14]所記載之抗蝕圖案之形成方法,其藉由投影曝光方法實施上述曝光步驟。 [發明之效果]The inventors of the present invention found that the above problems can be solved by the following technical means. [1] A photosensitive element, characterized in that it has a support film (A), a photosensitive resin composition layer (B) and a protective film (C) in this order, and the support specified in JIS B0601-2001 The surface roughness Rz A1 (nm) of the surface of the film (A) that is in contact with the photosensitive resin composition layer (B), the surface of the support film (A) that is in contact with the photosensitive resin composition layer The surface roughness Rz A2 (nm) of the surface opposite to the side of (B), the surface roughness Rz C1 of the surface of the protective film (C) that is in contact with the photosensitive resin composition layer (B) (nm), and the surface roughness Rz C2 (nm) of the surface of the protective film (C) on the opposite side to the side in contact with the photosensitive resin composition layer (B) satisfies the following (1) to (3) ): (1) 1<Rz A1 <100 (2) 300<Rz C1 <600 (3) 40<Rz C2 /Rz A2 . [2] The photosensitive element as described in [1], wherein 1<Rz A2 <200. [3] The photosensitive element described in [1] or [2], wherein 1.1<Rz A2 /Rz A1 <7. [4] The photosensitive element according to any one of [1] to [3], wherein 1.1<Rz C2 /Rz C1 <10. [5] The photosensitive element according to any one of [1] to [4], wherein 50<Rz C2 /Rz A2 <100. [6] The photosensitive element according to any one of [1] to [5], wherein the number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) is 30/30 mm2 or less. [7] The photosensitive element according to any one of [1] to [6], wherein the number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) is 15/30 mm2 or less. [8] The photosensitive element according to any one of [1] to [7], wherein the number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) is 10/30 mm2 or less. [9] The photosensitive element according to any one of [1] to [8], wherein the content of the titanium element contained in the support film (A) is 1 ppm to 20 ppm. [10] The photosensitive element according to any one of [1] to [9], wherein at least one side of the support film (A) is smoothed. [11] The photosensitive element according to any one of [1] to [10], wherein the film thickness of the support film (A) is not less than 5 μm and not more than 16 μm. [12] The photosensitive element according to any one of [1] to [11], wherein the surface of the protective film (C) contains a polypropylene resin. [13] A wound body of a photosensitive element obtained by winding the photosensitive element described in any one of [1] to [12]. [14] A method for forming a resist pattern, comprising: a layering step of laminating the photosensitive element described in any one of [1] to [12] on a substrate; an exposing step of exposing the photosensitive element exposing the photosensitive resin composition layer; and a developing step, which develops and removes the unexposed portion of the photosensitive resin composition layer. [15] The method for forming a resist pattern as described in [14], wherein the exposure step is carried out by a projection exposure method. [Effect of Invention]

根據本發明,能夠提供一種可兼顧解像性之提高與捲取時之皺褶防止之感光性元件、及抗蝕圖案之形成方法。According to the present invention, it is possible to provide a photosensitive element and a method for forming a resist pattern that can achieve both improvement in resolution and prevention of wrinkles during winding.

以下,對用以實施本發明之實施方式進行詳細說明。 [感光性元件] 圖1係模式性地表示本發明之感光性元件之一構成例的剖視圖。 本發明之感光性元件之特徵在於:其係依序具有支持膜(A)、感光性樹脂組合物層(B)及保護膜(C)者,且 由JIS B0601規定的支持膜(A)之與感光性樹脂組合物層相接之側之面的表面粗糙度RzA1 (nm)、支持膜(A)之與相接於感光性樹脂組合物層之側為相反側之面的表面粗糙度RzA2 (nm)、保護膜(C)之與感光性樹脂組合物層相接之側之面的表面粗糙度RzC1 (nm)、及保護膜(C)之與相接於感光性樹脂組合物層之側為相反側之面的表面粗糙度RzC2 (nm)滿足以下(1)~(3): (1)1<RzA1 <100 (2)300<RzC1 <600 (3)40<RzC2 /RzA2Embodiments for carrying out the present invention will be described in detail below. [Photosensitive element] FIG. 1 is a cross-sectional view schematically showing one configuration example of the photosensitive element of the present invention. The photosensitive element of the present invention is characterized in that it has a support film (A), a photosensitive resin composition layer (B) and a protective film (C) in sequence, and the support film (A) specified by JIS B0601 Surface roughness Rz A1 (nm) of the side in contact with the photosensitive resin composition layer, surface roughness of the support film (A) on the opposite side to the side in contact with the photosensitive resin composition layer Rz A2 (nm), the surface roughness Rz C1 (nm) of the surface of the protective film (C) in contact with the photosensitive resin composition layer, and the protective film (C) in contact with the photosensitive resin composition The surface roughness Rz C2 (nm) of the surface opposite to the object layer satisfies the following (1)~(3): (1)1<Rz A1 <100 (2)300<Rz C1 <600 (3)40 <Rz C2 /Rz A2 .

為了提高感光性元件之解像性,較佳為使用會遮斷曝光之光之內部異物較少之高品質膜作為支持膜(A)。 高品質膜之特徵在於:表面粗糙度較小,尤其是,與感光性樹脂組合物層(B)接觸之側之面之表面粗糙度較小。然而,若使用該等膜製造感光性元件卷(乾膜卷),則與保護膜(C)之摩擦力過高,導致捲取成卷時產生皺褶。因此,為了防止捲取成卷時產生皺褶,可例舉如下方法:增大保護膜(C)之與支持膜(A)接觸之側之面的表面粗糙度。In order to improve the resolution of the photosensitive element, it is preferable to use a high-quality film with less internal foreign matter that blocks exposed light as the support film (A). A high-quality film is characterized by a small surface roughness, especially, a small surface roughness on the side that is in contact with the photosensitive resin composition layer (B). However, when these films are used to manufacture photosensitive element rolls (dry film rolls), the frictional force with the protective film (C) is too high, causing wrinkles when wound up into a roll. Therefore, in order to prevent wrinkles at the time of winding up into a roll, the method of increasing the surface roughness of the side surface which contacts the support film (A) of a protective film (C) is mentioned, for example.

為了兼顧上述2個課題(解像性之提高、捲取時之皺褶防止),較為重要的是,支持膜(A)之表面粗糙度較小,與感光性樹脂組合物層(B)接觸之側之面更加平滑,並且,保護膜(C)之與感光性樹脂組合物層(B)接觸之側之面較為平滑,另一表面粗糙化。即,本發明人等想到如下之層構成較為理想,即,支持膜(A)與保護膜(C)均於某種程度上較為平滑,且兩者均有一面為粗糙化面。In order to balance the above two issues (improvement of resolution and prevention of wrinkles during winding), it is more important that the surface roughness of the support film (A) is small and that it is in contact with the photosensitive resin composition layer (B) The surface of the side of the protective film (C) is smoother, and the surface of the side contacting the photosensitive resin composition layer (B) of the protective film (C) is relatively smooth, and the other surface is roughened. That is, the inventors of the present invention have thought that a layer configuration in which both the support film (A) and the protective film (C) are smooth to some extent and both have a roughened surface is ideal.

因此,本發明人等藉由使支持膜(A)與保護膜(C)之表面於某種程度上較為平滑,且使支持膜(A)與保護膜(C)之表面粗糙度存在差異,實現了可兼顧解像性之提高與捲取成卷狀時之皺褶產生之防止的感光性元件。Therefore, the present inventors make the surfaces of the support film (A) and the protective film (C) smoother to some extent, and make the surface roughness of the support film (A) and the protective film (C) different, A photosensitive element that can achieve both improvement in resolution and prevention of wrinkles when wound into a roll.

於本發明中,使用式(1)~式(3)對上述構成進行規定。藉由滿足式(1)~式(3)全部,本發明之感光性元件具有良好之解像性,且可良好地防止捲取成卷狀時之皺褶。In the present invention, the above-mentioned configuration is defined using formulas (1) to (3). By satisfying all of the formulas (1) to (3), the photosensitive element of the present invention has good resolution and can well prevent wrinkles when wound up into a roll.

再者,於本說明書中,表面粗糙度係基於由JIS B0601-2001規定之方法所測得之最大高度Rz。又,表面粗糙度之值可使用雷射式、觸針式、光切斷式、光干涉式等通常之表面粗糙度測定器進行測定。In addition, in this specification, surface roughness is based on the maximum height Rz measured by the method prescribed|regulated by JISB0601-2001. In addition, the value of the surface roughness can be measured using a general surface roughness measuring device such as a laser type, a stylus type, a light cutting type, and an optical interference type.

<支持膜(A)> 本實施方式之支持膜(A)係用於支持感光性樹脂組合物層(B)之層或膜,較佳為使活性光線透過之透明基材膜。<Support film (A)> The support film (A) of this embodiment is a layer or film for supporting the photosensitive resin composition layer (B), and is preferably a transparent base film that allows active light to pass through.

作為透明基材膜,可例舉:包含聚乙烯、聚丙烯、聚碳酸酯、聚對苯二甲酸乙二酯等合成樹脂之膜。通常較佳為使用具有適度之可撓性及強度之聚對苯二甲酸乙二酯(PET)。 其中,較佳為使用內部異物較少之高品質膜。具體而言,作為高品質膜,更佳為使用:使用Ti系觸媒所合成之PET膜;潤滑劑之直徑較小且含量較少之PET膜;僅於膜之單面含有潤滑劑之PET膜;薄膜PET膜;至少單面實施有平滑化處理之PET膜;至少單面實施有電漿處理等粗糙化處理之PET膜等。 藉此,可於曝光之光不被內部異物遮斷之情況下對感光性樹脂組合物層(B)照射曝光之光,可提高感光性元件之解像性。As a transparent base film, the film containing synthetic resins, such as polyethylene, a polypropylene, a polycarbonate, polyethylene terephthalate, is mentioned. It is generally preferred to use polyethylene terephthalate (PET), which has moderate flexibility and strength. Among them, it is preferable to use a high-quality film with less internal foreign matter. Specifically, as a high-quality film, it is better to use: a PET film synthesized using a Ti-based catalyst; a PET film with a smaller diameter and less lubricant content; a PET film containing a lubricant on only one side of the film. Film; thin film PET film; PET film with smoothing treatment on at least one side; PET film with roughening treatment such as plasma treatment on at least one side, etc. Thereby, the exposure light can be irradiated to the photosensitive resin composition layer (B) without interrupting the exposure light by internal foreign matter, and the resolution of a photosensitive element can be improved.

支持膜(A)中所含之作為內部異物之直徑2 μm以上5 μm以下之粒子的個數較佳為30個/30 mm2 以下,更佳為15個/30 mm2 以下,進而較佳為10個/30 mm2 以下。The number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) as internal foreign matter is preferably 30 particles/30 mm 2 or less, more preferably 15 particles/30 mm 2 or less, and still more preferably 10 pieces/30 mm 2 or less.

支持膜(A)中所含之鈦元素(Ti)含量較佳為1 ppm以上20 ppm以下,更佳為2 ppm以上12 ppm以下。若鈦元素之含量為20 ppm以下,則可減少源自含鈦元素之凝集體之內部異物之個數,可防止解像性之降低。The content of titanium element (Ti) contained in the support film (A) is preferably not less than 1 ppm and not more than 20 ppm, more preferably not less than 2 ppm and not more than 12 ppm. If the content of the titanium element is 20 ppm or less, the number of internal foreign matter originating from the aggregate containing the titanium element can be reduced, and a decrease in resolution can be prevented.

支持膜(A)之膜厚較佳為5 μm以上16 μm以下,更佳為6 μm以上12 μm以下。支持膜之膜厚越薄,則內部異物之個數越少,越可防止解像性之降低,但若膜厚未達5 μm,則會於塗佈、捲取之製造步驟中因張力所導致之向捲取方向之伸長變形或微小損傷而產生破損,或者,會因膜之強度不足而於層壓時產生皺褶。The film thickness of the support film (A) is preferably from 5 μm to 16 μm, more preferably from 6 μm to 12 μm. The thinner the film thickness of the support film, the fewer the number of internal foreign matter, and the better it can prevent the degradation of resolution. However, if the film thickness is less than 5 μm, it will be caused by tension in the manufacturing steps of coating and winding. The resulting elongation deformation or micro damage in the winding direction will cause breakage, or it will cause wrinkles during lamination due to insufficient strength of the film.

較佳為於支持膜(A)之至少單面實施有使用軋光裝置等所進行之平滑化處理。藉此,可使支持膜(A)之單面,尤其是與感光性樹脂組合物層(B)接觸之側之面之表面粗糙度變小,從而使本發明之效果更加優異。It is preferable to perform smoothing treatment using a calender apparatus etc. on at least one side of a support film (A). Thereby, the surface roughness of one side of the support film (A), especially the side in contact with the photosensitive resin composition layer (B) can be reduced, thereby making the effect of the present invention more excellent.

就提高向感光性樹脂組合物層(B)照射之光線之平行度,於感光性元件之曝光顯影後獲得更高之解像性之觀點而言,支持膜(A)之霧度較佳為0.01%~1.5%,更佳為0.01%~1.2%,進而較佳為0.01~0.95%。From the perspective of improving the parallelism of the light irradiated to the photosensitive resin composition layer (B) and obtaining higher resolution after exposure and development of the photosensitive element, the haze of the support film (A) is preferably 0.01% to 1.5%, more preferably 0.01% to 1.2%, still more preferably 0.01 to 0.95%.

並且,於本實施方式之感光性元件中,關於兩面之表面粗糙度,支持膜(A)滿足以下式(1)。 (1)1<RzA1 <100, 此處,RzA1 表示支持膜(A)之與感光性樹脂組合物層(B)相接之側之面的表面粗糙度(nm),RzA2 表示支持膜(A)之與相接於感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度(nm)。 式(1)規定,支持膜(A)之兩面均較為平滑,但單面為粗糙化面。藉此,感光性元件之解像性變得優異。And, in the photosensitive element of this embodiment, the support film (A) satisfies the following formula (1) about the surface roughness of both surfaces. (1) 1<Rz A1 <100, where Rz A1 represents the surface roughness (nm) of the side of the support film (A) that is in contact with the photosensitive resin composition layer (B), and Rz A2 represents the support Surface roughness (nm) of the surface of the film (A) opposite to the side in contact with the photosensitive resin composition layer (B). Formula (1) stipulates that both sides of the support film (A) are relatively smooth, but one side is roughened. Thereby, the resolution of a photosensitive element becomes excellent.

RzA1 及RzA2 只要滿足上述式(1)即可,並無特別限定,但具體而言,RzA1 更佳為10 nm~70 nm。無論相對於RzA1 之大小,RzA2 只要為較小值即可。具體而言,RzA2 較佳為1 nm<RzA2 <200 nm,更佳為40 nm~100 nm,進而較佳為50 nm~90 nm。又,RzA2 /RzA1 較佳為1.1<RzA2 /RzA1 <7,更佳為1.2~5。Rz A1 and Rz A2 are not particularly limited as long as they satisfy the above formula (1), but specifically, Rz A1 is more preferably 10 nm to 70 nm. Regardless of the size of Rz A1 , Rz A2 only needs to be a small value. Specifically, Rz A2 is preferably 1 nm<Rz A2 <200 nm, more preferably 40 nm˜100 nm, further preferably 50 nm˜90 nm. Also, Rz A2 /Rz A1 is preferably 1.1<Rz A2 /Rz A1 <7, more preferably 1.2-5.

<感光性樹脂組合物層(B)> 感光性樹脂組合物層(B)積層於支持膜(A)上。作為本實施方式之感光性樹脂組合物層(B),使用公知之感光性樹脂組合物層即可。通常,感光性樹脂組合物層由包含如下成分之感光性樹脂組合物形成:(i)鹼溶性高分子、(ii)含乙烯性不飽和雙鍵之成分(例如乙烯性不飽和加成聚合性單體)、及(iii)光聚合起始劑。<Photosensitive resin composition layer (B)> The photosensitive resin composition layer (B) is laminated on the support film (A). As the photosensitive resin composition layer (B) of this embodiment, a well-known photosensitive resin composition layer may be used. Usually, the photosensitive resin composition layer is formed of a photosensitive resin composition comprising (i) an alkali-soluble polymer, (ii) a component containing an ethylenically unsaturated double bond (such as an ethylenically unsaturated addition polymerizable monomer), and (iii) a photopolymerization initiator.

就鹼溶性之觀點而言,作為(i)成分之鹼溶性高分子較佳為具有羧基。又,就硬化膜之強度及感光性樹脂組合物之塗佈性之觀點而言,鹼溶性高分子亦較佳為於其側鏈具有芳香族基。From the viewpoint of alkali solubility, the alkali-soluble polymer as the component (i) preferably has a carboxyl group. Moreover, it is also preferable that an alkali-soluble polymer has an aromatic group in the side chain from the viewpoint of the intensity|strength of a cured film, and the coatability of a photosensitive resin composition.

就感光性樹脂組合物層之耐顯影性、以及抗蝕圖案之耐顯影性、解像性及密接性之觀點而言,鹼溶性高分子之酸當量較佳為100以上,就感光性樹脂組合物層之顯影性及剝離性之觀點而言,鹼溶性高分子之酸當量較佳為600以下。鹼溶性高分子之酸當量更佳為250~550,進而較佳為300~500。In terms of the development resistance of the photosensitive resin composition layer, and the development resistance, resolution and adhesion of the resist pattern, the acid equivalent of the alkali-soluble polymer is preferably 100 or more. From the viewpoint of the developability and peelability of the material layer, the acid equivalent weight of the alkali-soluble polymer is preferably 600 or less. The acid equivalent of the alkali-soluble polymer is more preferably from 250 to 550, and still more preferably from 300 to 500.

就使乾膜抗蝕劑之厚度保持均勻,獲得對顯影液之耐性之觀點而言,鹼溶性高分子之重量平均分子量較佳為處於5,000~500,000之範圍內,更佳為處於10,000~200,000,進而較佳為處於18,000~100,000。 於本說明書中,所謂重量平均分子量係指藉由凝膠滲透層析法(GPC)使用標準聚苯乙烯之校準曲線所測得之重量平均分子量。鹼溶性高分子之分散度較佳為1.0~6.0。From the standpoint of keeping the thickness of the dry film resist uniform and obtaining resistance to the developer, the weight average molecular weight of the alkali-soluble polymer is preferably in the range of 5,000-500,000, more preferably 10,000-200,000, More preferably, it is 18,000-100,000. In this specification, the so-called weight average molecular weight refers to the weight average molecular weight measured by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene. The dispersity of the alkali-soluble polymer is preferably 1.0-6.0.

作為鹼溶性高分子,例如可例舉:含羧酸之乙烯系共聚物、含羧酸之纖維素等。As an alkali-soluble polymer, a carboxylic acid-containing vinyl copolymer, a carboxylic acid-containing cellulose, etc. are mentioned, for example.

含羧酸之乙烯系共聚物係使第1單體與第2單體進行乙烯共聚所獲得之化合物,上述第1單體係選自α,β-不飽和羧酸中之至少1種,上述第2單體係選自(甲基)丙烯酸烷基酯、(甲基)丙烯酸羥烷基酯、(甲基)丙烯醯胺及其氮上之氫被烷基或烷氧基取代而成之化合物、苯乙烯及苯乙烯衍生物、(甲基)丙烯腈、及(甲基)丙烯酸縮水甘油酯中之至少1種。Carboxylic acid-containing ethylene-based copolymers are compounds obtained by ethylene-copolymerizing the first monomer and the second monomer. The second monomer system is selected from alkyl (meth)acrylate, hydroxyalkyl (meth)acrylate, (meth)acrylamide and hydrogen on nitrogen replaced by alkyl or alkoxy At least one of compounds, styrene and styrene derivatives, (meth)acrylonitrile, and glycidyl (meth)acrylate.

作為含羧酸之乙烯系共聚物所使用之第1單體,可例舉:丙烯酸、甲基丙烯酸、反丁烯二酸、桂皮酸、丁烯酸、伊康酸、順丁烯二酸半酯等。該等第1單體可分別單獨使用,亦可組合2種以上。Examples of the first monomer used in vinyl copolymers containing carboxylic acids include: acrylic acid, methacrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, maleic acid semi- Esters etc. These 1st monomers may be used individually, respectively, and may combine 2 or more types.

第1單體之結構單元於含羧酸之乙烯系共聚物中之含有比率以共聚物之質量為基準,為15質量%以上40質量%以下,較佳為20質量%以上35質量%以下。若其比率未達15質量%,則難以利用鹼性水溶液進行顯影。若其比率超過40質量%,則第1單體於聚合中不溶於溶劑,因此難以合成共聚物。The content ratio of the structural unit of the first monomer in the carboxylic acid-containing vinyl copolymer is 15% by mass to 40% by mass, preferably 20% by mass to 35% by mass, based on the mass of the copolymer. If the ratio is less than 15% by mass, it will be difficult to develop with an alkaline aqueous solution. When the ratio exceeds 40% by mass, the first monomer is insoluble in a solvent during polymerization, making it difficult to synthesize a copolymer.

作為含羧酸之乙烯系共聚物所使用之第2單體之具體例,可例舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯醯胺、N-羥甲基丙烯醯胺、N-丁氧甲基丙烯醯胺、苯乙烯、α-甲基苯乙烯、對甲基苯乙烯、對氯苯乙烯、(甲基)丙烯腈、(甲基)丙烯酸縮水甘油酯等。該等第2單體可分別單獨使用,亦可組合2種以上使用。Specific examples of the second monomer used in the carboxylic acid-containing vinyl copolymer include: methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, ( Cyclohexyl (meth)acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate , 4-Hydroxybutyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, (meth)acrylamide, N-methylolacrylamide , N-butoxymethacrylamide, styrene, α-methylstyrene, p-methylstyrene, p-chlorostyrene, (meth)acrylonitrile, glycidyl (meth)acrylate, etc. These second monomers may be used alone, respectively, or may be used in combination of two or more.

第2單體之結構單元於含羧酸之乙烯系共聚物中之含有比率以共聚物之質量為基準,為60質量%以上85質量%以下,較佳為65質量%以上80質量%以下。The content ratio of the structural unit of the second monomer in the carboxylic acid-containing vinyl copolymer is 60% by mass to 85% by mass, preferably 65% by mass to 80% by mass, based on the mass of the copolymer.

就向側鏈導入芳香族基之觀點而言,更佳為使含羧酸之乙烯系共聚物含有苯乙烯或α-甲基苯乙烯、對甲基苯乙烯、對氯苯乙烯等苯乙烯衍生物之結構單元作為第2單體。於該情形時,苯乙烯或苯乙烯衍生物之結構單元於含羧酸之乙烯系共聚物中之含有比率以共聚物之質量為基準,較佳為5質量%以上35質量%以下,更佳為15質量%以上30質量%以下。From the viewpoint of introducing an aromatic group into the side chain, it is more preferable to make the carboxylic acid-containing vinyl copolymer contain styrene or α-methylstyrene, p-methylstyrene, p-chlorostyrene, etc. The structural unit of the substance is used as the second monomer. In this case, the content ratio of the structural units of styrene or styrene derivatives in the carboxylic acid-containing vinyl copolymer is based on the mass of the copolymer, preferably 5% by mass or more and 35% by mass or less, more preferably It is not less than 15% by mass and not more than 30% by mass.

含羧酸之乙烯系共聚物之重量平均分子量處於10,000~200,000之範圍內,較佳為處於18,000~100,000之範圍內。若該重量平均分子量未達10,000,則硬化膜之強度變小。若該重量平均分子量超過200,000,則感光性樹脂組合物之黏度變得過高,導致其塗佈性降低。The weight average molecular weight of the carboxylic acid-containing vinyl copolymer is in the range of 10,000-200,000, preferably in the range of 18,000-100,000. When this weight average molecular weight is less than 10,000, the intensity|strength of a cured film will become small. When this weight average molecular weight exceeds 200,000, the viscosity of a photosensitive resin composition will become too high, and the applicability will fall.

含羧酸之乙烯系共聚物較佳為藉由如下方式合成,即,向利用丙酮、甲基乙基酮、異丙醇等溶劑對各種單體之混合物進行稀釋所得之溶液中,添加適量之過氧化苯甲醯、偶氮異丁腈等自由基聚合起始劑,並進行過熱攪拌。亦存在如下情形,即,一面將混合物之一部分滴加至反應液中,一面合成。亦存在如下情形,即,反應結束後,進而添加溶劑,調整至所需之濃度。作為該合成方法,除了使用溶液聚合以外,亦可使用塊狀聚合、懸浮聚合及乳化聚合。The vinyl copolymer containing carboxylic acid is preferably synthesized by adding an appropriate amount of benzoyl peroxide, azoisobutyronitrile and other free radical polymerization initiators, and overheated stirring. There is also a case of synthesizing while dropping a part of the mixture into the reaction liquid. There are also cases where after the reaction is completed, a solvent is further added to adjust to a desired concentration. As this synthesis method, in addition to solution polymerization, block polymerization, suspension polymerization, and emulsion polymerization can also be used.

作為含羧酸之纖維素,例如可例舉:鄰苯二甲酸醋酸纖維素、羥乙基-羧甲基纖維素等。鹼溶性高分子(A)之含量以感光性樹脂組合物之總質量為基準,較佳為30質量%以上80質量%以下之範圍內,更佳為40質量%以上65質量%以下之範圍內。若該含量未達30質量%,則於鹼性顯影液中之分散性降低,顯影時間明顯變長。若該含量超過80質量%,則感光性樹脂組合物層之光硬化變得不充分,作為抗蝕劑之耐性降低。鹼溶性高分子可單獨使用,亦可組合2種以上使用。Examples of carboxylic acid-containing cellulose include cellulose acetate phthalate, hydroxyethyl-carboxymethyl cellulose, and the like. The content of the alkali-soluble polymer (A) is based on the total mass of the photosensitive resin composition, preferably in the range of 30% by mass to 80% by mass, more preferably in the range of 40% by mass to 65% by mass . If the content is less than 30% by mass, the dispersibility in an alkaline developing solution will decrease, and the developing time will become significantly longer. When this content exceeds 80 mass %, the photocuring of a photosensitive resin composition layer will become insufficient, and the tolerance as a resist will fall. Alkali-soluble polymers may be used alone or in combination of two or more.

關於作為(ii)成分之乙烯性不飽和加成聚合性單體,可使用公知種類之化合物。作為乙烯性不飽和加成聚合性單體,例如可例舉:丙烯酸2-羥基-3-苯氧基丙酯、苯氧基四乙二醇丙烯酸酯、鄰苯二甲酸β-羥丙基-β'-(丙烯醯氧基)丙酯、1,4-四亞甲基二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,4-環己二醇二(甲基)丙烯酸酯、七丙二醇二(甲基)丙烯酸酯、(甲基)丙烯酸甘油酯、2-二(對羥苯基)丙烷二(甲基)丙烯酸酯、三(甲基)丙烯酸甘油酯、三羥甲基丙烷三(甲基)丙烯酸酯之分子中包含環氧乙烷鏈、環氧丙烷鏈、四氫呋喃鏈之至少一種之化合物;二季戊四醇五(甲基)丙烯酸酯之分子中包含環氧乙烷鏈、環氧丙烷鏈、四氫呋喃鏈之至少一種之化合物;二季戊四醇六(甲基)丙烯酸酯之分子中包含環氧乙烷鏈、環氧丙烷鏈、四氫呋喃鏈之至少一種之化合物;fr三羥甲基丙烷三縮水甘油醚三(甲基)丙烯酸酯、雙酚A二縮水甘油醚二(甲基)丙烯酸酯、鄰苯二甲酸二烯丙酯、聚乙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、4-正辛基苯氧基五丙二醇丙烯酸酯、九丙二醇雙(三乙二醇甲基丙烯酸酯)、聚丙二醇雙(四乙二醇甲基丙烯酸酯)、聚丙二醇雙(三乙二醇甲基丙烯酸酯)、聚丙二醇雙(二乙二醇丙烯酸酯)、4-正壬基苯氧基七乙二醇二丙二醇(甲基)丙烯酸酯、苯氧基四丙二醇四乙二醇(甲基)丙烯酸酯、雙酚A系(甲基)丙烯酸酯單體之分子中包含環氧乙烷鏈、環氧丙烷鏈、四氫呋喃鏈之至少一種之化合物等。乙烯性不飽和加成聚合性單體即便為除了以宜包含環氧乙烷鏈、環氧丙烷鏈、四氫呋喃鏈之至少一種為主旨所例示之上述化合物以外之化合物,亦宜包含環氧乙烷鏈、環氧丙烷鏈、四氫呋喃鏈之至少一種環氧烷鏈。As the ethylenically unsaturated addition-polymerizable monomer as the component (ii), known types of compounds can be used. Examples of ethylenically unsaturated addition polymerizable monomers include: 2-hydroxy-3-phenoxypropyl acrylate, phenoxytetraethylene glycol acrylate, β-hydroxypropyl-phthalic acid β'-(acryloxy)propyl ester, 1,4-tetramethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,4-cyclo Hexylene glycol di(meth)acrylate, heptapropylene glycol di(meth)acrylate, glyceryl (meth)acrylate, 2-di(p-hydroxyphenyl)propane di(meth)acrylate, tri(meth)acrylate Glyceryl acrylate, trimethylolpropane tri(meth)acrylate, compounds containing at least one of ethylene oxide chain, propylene oxide chain, and tetrahydrofuran chain in the molecule; dipentaerythritol penta(meth)acrylate Compounds containing at least one of ethylene oxide chains, propylene oxide chains, and tetrahydrofuran chains in their molecules; compounds containing ethylene oxide chains, propylene oxide chains, and tetrahydrofuran chains in their molecules At least one compound; fr trimethylolpropane triglycidyl ether tri(meth)acrylate, bisphenol A diglycidyl ether di(meth)acrylate, diallyl phthalate, polyethylene glycol Alcohol di(meth)acrylate, polypropylene glycol di(meth)acrylate, 4-n-octylphenoxypentapropylene glycol acrylate, nonapropylene glycol bis(triethylene glycol methacrylate), polypropylene glycol bis( Tetraethylene glycol methacrylate), polypropylene glycol bis(triethylene glycol methacrylate), polypropylene glycol bis(diethylene glycol acrylate), 4-n-nonylphenoxyheptaethylene glycol dipropylene glycol (Meth) acrylate, phenoxy tetrapropylene glycol tetraethylene glycol (meth) acrylate, and bisphenol A (meth) acrylate monomers contain ethylene oxide chains, propylene oxide chains, A compound of at least one kind of tetrahydrofuran chain, etc. Even if the ethylenically unsaturated addition-polymerizable monomer is a compound other than the above-mentioned compounds that preferably contain at least one of an ethylene oxide chain, a propylene oxide chain, and a tetrahydrofuran chain, it is preferable to contain ethylene oxide. chain, propylene oxide chain, tetrahydrofuran chain at least one alkylene oxide chain.

又,作為乙烯性不飽和加成聚合性單體,亦可使用:六亞甲基二異氰酸酯、甲苯基二異氰酸酯等多元異氰酸酯化合物與(甲基)丙烯酸2-羥基丙酯、低聚乙二醇單(甲基)丙烯酸酯、低聚丙二醇單(甲基)丙烯酸酯等羥基丙烯酸酯化合物之胺基甲酸酯化化合物等。該等乙烯性不飽和加成聚合性單體可分別單獨使用,亦可組合2種以上使用。Also, as ethylenically unsaturated addition-polymerizable monomers, polyvalent isocyanate compounds such as hexamethylene diisocyanate and tolyl diisocyanate, 2-hydroxypropyl (meth)acrylate, oligoethylene glycol Urethane compounds of hydroxyacrylate compounds such as mono(meth)acrylate, oligopropylene glycol mono(meth)acrylate, etc. These ethylenically unsaturated addition polymerizable monomers may be used alone or in combination of two or more.

乙烯性不飽和加成聚合性單體之含量以感光性樹脂組合物之總質量為基準,較佳為20質量%以上70質量%以下,更佳為30質量%以上60質量%以下。若該含量未達20質量%,則感光性樹脂之硬化不充分,作為抗蝕劑之強度不足。另一方面,若該含量超過70質量%,則於將感光性元件以卷狀之形式進行保存之情形時,容易發生感光性樹脂組合物層或感光性樹脂組合物緩慢地自捲端面溢出之現象,即熔邊(edge fusion)。The content of the ethylenically unsaturated addition polymerizable monomer is based on the total mass of the photosensitive resin composition, preferably 20 mass % to 70 mass %, more preferably 30 mass % to 60 mass %. When this content is less than 20 mass %, hardening of a photosensitive resin will be insufficient, and the intensity|strength as a resist will be insufficient. On the other hand, if the content exceeds 70% by mass, when the photosensitive element is stored in roll form, the photosensitive resin composition layer or the photosensitive resin composition will easily overflow from the roll end surface slowly. Phenomenon, that is, edge fusion.

關於作為(iii)成分之光聚合起始劑,例如可例舉:苯偶醯二甲基縮酮、苯偶醯二乙基縮酮、苯偶醯二丙基縮酮、苯偶醯二苯基縮酮、安息香甲醚、安息香乙醚、安息香丙醚、安息香苯醚、9-氧硫𠮿

Figure 110112219-A0304-12-01
、2,4-二甲基-9-氧硫𠮿
Figure 110112219-A0304-12-01
、2,4-二乙基-9-氧硫𠮿
Figure 110112219-A0304-12-01
、2-異丙基-9-氧硫𠮿
Figure 110112219-A0304-12-01
、4-異丙基-9-氧硫𠮿
Figure 110112219-A0304-12-01
、2,4-二異丙基-9-氧硫𠮿
Figure 110112219-A0304-12-01
、2-氟-9-氧硫𠮿
Figure 110112219-A0304-12-01
、4-氟-9-氧硫𠮿
Figure 110112219-A0304-12-01
、2-氯-9-氧硫𠮿
Figure 110112219-A0304-12-01
、4-氯-9-氧硫𠮿
Figure 110112219-A0304-12-01
、1-氯-4-丙氧基-9-氧硫𠮿
Figure 110112219-A0304-12-01
、二苯甲酮、4,4'-雙(二甲胺基)二苯甲酮[米其勒酮]、4,4'-雙(二乙胺基)二苯甲酮、2,2-二甲氧基-2-苯基苯乙酮等芳香族酮類;2-(鄰氯苯基)-4,5-二苯基咪唑基二聚物等聯咪唑化合物;9-苯基吖啶等吖啶類;α,α-二甲氧基-α-嗎啉基-甲硫基苯基苯乙酮、2,4,6-三甲基苯甲醯基二苯基氧化膦等芳香族系起始劑;苯基甘胺酸、N-苯基甘胺酸等N-芳基胺基酸類;1-苯基-1,2-丙二酮-2-鄰苯甲醯肟、2,3-二側氧-3-苯基丙酸乙酯-2-(鄰苯甲醯羰基)-肟等肟酯類;對二甲胺基苯甲酸、對二乙胺基苯甲酸及對二異丙基胺基苯甲酸以及該等與醇之酯化物、對羥基苯甲酸酯等。其中,較佳為2-(鄰氯苯基)-4,5-二苯基咪唑基二聚物與米其勒酮或4,4'-(二乙胺基)二苯甲酮之組合。Regarding the photopolymerization initiator as the component (iii), for example, benzoyl dimethyl ketal, benzoyl diethyl ketal, benzoyl dipropyl ketal, benzoyl diphenyl ketal, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin phenyl ether, 9-oxosulfur𠮿
Figure 110112219-A0304-12-01
, 2,4-Dimethyl-9-oxosulfur 𠮿
Figure 110112219-A0304-12-01
, 2,4-Diethyl-9-oxothio𠮿
Figure 110112219-A0304-12-01
, 2-isopropyl-9-oxothio𠮿
Figure 110112219-A0304-12-01
, 4-isopropyl-9-oxothio𠮿
Figure 110112219-A0304-12-01
, 2,4-Diisopropyl-9-oxosulfur
Figure 110112219-A0304-12-01
, 2-fluoro-9-oxosulfur
Figure 110112219-A0304-12-01
, 4-fluoro-9-oxosulfur
Figure 110112219-A0304-12-01
, 2-Chloro-9-oxosulfur
Figure 110112219-A0304-12-01
, 4-Chloro-9-oxosulfur
Figure 110112219-A0304-12-01
, 1-Chloro-4-propoxy-9-oxosulfur
Figure 110112219-A0304-12-01
, benzophenone, 4,4'-bis(dimethylamino)benzophenone [Michler's ketone], 4,4'-bis(diethylamino)benzophenone, 2,2- Aromatic ketones such as dimethoxy-2-phenylacetophenone; biimidazole compounds such as 2-(o-chlorophenyl)-4,5-diphenylimidazolyl dimer; 9-phenylacridine Acridines; α,α-dimethoxy-α-morpholinyl-methylthiophenylacetophenone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and other aromatics It is an initiator; N-aryl amino acids such as phenylglycine and N-phenylglycine; 1-phenyl-1,2-propanedione-2-phthaloxime, 2, Oxime esters such as 3-dioxy-3-phenylpropionate-2-(o-benzoylcarbonyl)-oxime; p-dimethylaminobenzoic acid, p-diethylaminobenzoic acid and p-diiso Propylaminobenzoic acid and its esterified products with alcohols, parabens, etc. Among them, a combination of 2-(o-chlorophenyl)-4,5-diphenylimidazolyl dimer and Michelerone or 4,4'-(diethylamino)benzophenone is preferred.

光聚合起始劑之含量以感光性樹脂組合物之總質量為基準,較佳為0.01質量%以上20質量%以下,更佳為1質量%以上10質量%以下。若該含量少於0.01質量%,則感度不充分。若該含量超過20質量%,則紫外線吸收率變高,感光性樹脂組合物層底部之部分之硬化變得不充分。The content of the photopolymerization initiator is based on the total mass of the photosensitive resin composition, preferably not less than 0.01% by mass and not more than 20% by mass, more preferably not less than 1% by mass and not more than 10% by mass. If the content is less than 0.01% by mass, the sensitivity will be insufficient. When this content exceeds 20 mass %, ultraviolet absorption rate will become high, and hardening of the part of the bottom part of a photosensitive resin composition layer will become insufficient.

為了提高本實施方式之感光性樹脂組合物層(B)之熱穩定性及/或保存穩定性,較佳為使感光性樹脂組合物或感光性樹脂組合物層含有自由基聚合抑制劑。作為自由基聚合抑制劑,例如可例舉:4-羥基-2,2,6,6-四甲基哌啶-1-氧基苯甲酸酯自由基、2,2,6,6-四甲基哌啶-1-氧自由基、4-羥基-2,2,6,6-四甲基哌啶-1-氧自由基等TEMPO(2,2,6,6-tetramethylpiperidine-1-oxyl,2,2,6,6-四甲基哌啶-1-氧自由基)衍生物類;啡噻𠯤、N,N-二乙基羥胺、萘胺、N-(1-甲基庚基)-N'-苯基-對苯二胺、4,4'-二異丙苯基-二苯胺等胺類;4-第三丁基兒茶酚(pyrocatechol)等兒茶酚(catechol)類;對苯醌、氫醌、2-羥基-1,4-萘醌、第三丁基氫醌、甲基氫醌、2,5-二-第三丁基氫醌等醌類;二-第三丁基-7-苯基醌甲基化物等醌甲基化物類;銅鐵靈、二丁基二硫代胺基甲酸銅(II)、N-亞硝基-N-苯基羥胺鋁等螯合化合物類;2-第三丁基-4,6-二甲基苯酚、[伸乙基雙(氧乙烯)]雙[3-(3-第三丁基-4-羥基-5-甲基苯基)丙酸酯]、2,2'-亞甲基雙[6-(1-甲基環己基)-對甲酚、2,6-二-第三丁基-對甲酚、2,6-二-第三丁基苯酚、辛基-3,5-二-第三丁基-4-羥基-氫桂皮酸、2,2-雙[[[3-(3,5-二-第三丁基-4-羥基苯基)丙醯基]氧基]甲基]丙烷-1,3-二醇-1,3-雙[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、對甲氧基苯酚、4,4'-亞丁基雙(6-第三丁基-3-甲基苯酚)等酚衍生物類;鄰苯三酚、氯化亞銅等。In order to improve the thermal stability and/or storage stability of the photosensitive resin composition layer (B) of this embodiment, it is preferable to make a photosensitive resin composition or a photosensitive resin composition layer contain a radical polymerization inhibitor. As a radical polymerization inhibitor, for example, 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxybenzoate radical, 2,2,6,6-tetra TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl , 2,2,6,6-tetramethylpiperidine-1-oxyl radical) derivatives; )-N'-phenyl-p-phenylenediamine, 4,4'-dicumyl-diphenylamine and other amines; 4-tert-butyl catechol (pyrocatechol) and other catechols ; p-benzoquinone, hydroquinone, 2-hydroxy-1,4-naphthoquinone, tertiary butyl hydroquinone, methyl hydroquinone, 2,5-di-tertiary butyl hydroquinone and other quinones; Quinone methides such as tributyl-7-phenylquinone methide; cuproferrin, copper (II) dibutyldithiocarbamate, N-nitroso-N-phenylhydroxylamine aluminum, etc. Chelating compounds; 2-tert-butyl-4,6-dimethylphenol, [ethylenylbis(oxyethylene)]bis[3-(3-tert-butyl-4-hydroxy-5-methanol) phenyl) propionate], 2,2'-methylenebis[6-(1-methylcyclohexyl)-p-cresol, 2,6-di-tert-butyl-p-cresol, 2 ,6-di-tert-butylphenol, octyl-3,5-di-tert-butyl-4-hydroxy-hydrocinnamic acid, 2,2-bis[[[3-(3,5-di- tert-butyl-4-hydroxyphenyl)propionyl]oxy]methyl]propane-1,3-diol-1,3-bis[3-(3,5-di-tert-butyl- 4-hydroxyphenyl)propionate], p-methoxyphenol, 4,4'-butylene bis(6-tert-butyl-3-methylphenol) and other phenol derivatives; pyrogallol, Cuprous Chloride etc.

於本實施方式中,感光性樹脂組合物層(B)亦可含有染料、顏料等著色物質。作為著色物質,例如可例舉:品紅、酞菁綠、金黃胺鹼、Calkoxide Green S、Paramagenta、結晶紫、甲基橙、尼羅藍2B、維多利亞藍、孔雀綠、鹼性藍20、鑽石綠等。In this embodiment, the photosensitive resin composition layer (B) may contain coloring substances, such as a dye and a pigment. Examples of coloring substances include magenta, phthalocyanine green, auretamine, Calkoxide Green S, Paramagenta, crystal violet, methyl orange, Nile blue 2B, Victoria blue, malachite green, basic blue 20, diamond Green and so on.

於本實施方式中,亦可使感光性樹脂組合物層(B)含有藉由光照射而顯色之顯色系染料。作為顯色系染料,例如已知有隱色染料與鹵素化合物之組合。作為隱色染料,例如可例舉:三(4-二甲胺基-2-甲基苯基)甲烷[隱色結晶紫]、三(4-二甲胺基-2-甲基苯基)甲烷[隱色孔雀綠]等。作為鹵素化合物,例如可例舉:溴戊烷、溴異戊烷、1,2-二溴-2-甲基丙烷、1,2-二溴乙烷、二苯溴甲烷、二溴甲苯、二溴甲烷、三溴甲基苯基碸、四溴化碳、磷酸三(2,3-二溴丙基)酯、三氯乙醯胺、碘戊烷、碘異丁烷、1,1,1-三氯-2,2-雙(對氯苯基)乙烷、六氯乙烷等。In this embodiment, you may make the photosensitive resin composition layer (B) contain the chromogenic dye which develops a color by light irradiation. As a chromogenic dye, the combination of a leuco dye and a halogen compound is known, for example. Examples of leuco dyes include tris(4-dimethylamino-2-methylphenyl)methane [leuco crystal violet], tris(4-dimethylamino-2-methylphenyl) Methane [leuco malachite green] and so on. Examples of halogen compounds include bromopentane, bromoisopentane, 1,2-dibromo-2-methylpropane, 1,2-dibromoethane, diphenylbromomethane, dibromotoluene, and dibromomethane. , tribromomethyl phenyl sulfide, carbon tetrabromide, tris(2,3-dibromopropyl) phosphate, trichloroacetamide, iodopentane, iodoisobutane, 1,1,1-tri Chloro-2,2-bis(p-chlorophenyl)ethane, hexachloroethane, etc.

於本實施方式中,視需要亦可使感光性樹脂組合物層(B)含有塑化劑等添加劑。作為添加劑,例如可例舉:鄰苯二甲酸二乙酯等鄰苯二甲酸酯類、鄰甲苯磺醯胺、對甲苯磺醯胺、檸檬酸三丁酯、檸檬酸三乙酯、乙醯檸檬酸三乙酯、乙醯檸檬酸三正丙酯、乙醯檸檬酸三正丁酯、聚丙二醇、聚乙二醇、聚乙二醇烷基醚、聚丙二醇烷基醚等。In this embodiment, the photosensitive resin composition layer (B) may contain additives, such as a plasticizer, as needed. Examples of additives include: phthalates such as diethyl phthalate, o-toluenesulfonamide, p-toluenesulfonamide, tributyl citrate, triethyl citrate, acetylated lemon Triethyl acetate, acetyl tri-n-propyl citrate, acetyl tri-n-butyl citrate, polypropylene glycol, polyethylene glycol, polyethylene glycol alkyl ether, polypropylene glycol alkyl ether, etc.

感光性樹脂組合物層(B)之厚度較佳為3~100 μm,更佳之上限為50 μm。感光性樹脂層之厚度越接近3 μm,解像性越高,感光性樹脂層之厚度越接近100 μm,膜強度越高,因此可根據用途適當地進行選擇。The thickness of the photosensitive resin composition layer (B) is preferably 3-100 μm, more preferably the upper limit is 50 μm. The closer the thickness of the photosensitive resin layer is to 3 μm, the higher the resolution is, and the closer the thickness of the photosensitive resin layer is to 100 μm, the higher the film strength is, so it can be appropriately selected according to the application.

<保護膜(C)> 保護膜(C)積層於支持膜(A)與感光性樹脂組合物層(B)之積層體之感光性樹脂組合物層(B)側,作為保護層(cover)發揮作用。<Protective film (C)> The protective film (C) is laminated on the photosensitive resin composition layer (B) side of the laminate of the support film (A) and the photosensitive resin composition layer (B), and functions as a protective layer (cover).

由於感光性樹脂組合物層(B)與保護膜(C)之密接力充分小於感光性樹脂組合物層(B)與支持膜(A)之密接力,故而保護膜(C)可輕易地自感光性樹脂組合物層(B)剝離。例如,可較佳地使用聚乙烯膜、及聚丙烯膜、延伸聚丙烯膜等作為保護膜(C)。更佳為保護膜(C)之至少表面包含聚丙烯樹脂。 保護膜(C)之膜厚較佳為10~100 μm,更佳為10~50 μm。作為保護膜(C),例如可例舉:Oji F-Tex股份有限公司製造之EM-501、E-200、E-201F、FG-201、MA-411、東麗股份有限公司製造之KW37、2578、2548、2500、YM17S、Tamapoly股份有限公司製造之GF-18、GF-818、GF-858等。Since the adhesive force between the photosensitive resin composition layer (B) and the protective film (C) is sufficiently smaller than the adhesive force between the photosensitive resin composition layer (B) and the support film (A), the protective film (C) can easily The photosensitive resin composition layer (B) peeled off. For example, a polyethylene film, and a polypropylene film, a stretched polypropylene film, etc. can be preferably used as the protective film (C). More preferably, at least the surface of the protective film (C) contains polypropylene resin. The film thickness of the protective film (C) is preferably from 10 to 100 μm, more preferably from 10 to 50 μm. As the protective film (C), for example: EM-501, E-200, E-201F, FG-201, MA-411 manufactured by Oji F-Tex Co., Ltd., KW37 manufactured by Toray Co., Ltd., 2578, 2548, 2500, YM17S, GF-18, GF-818, GF-858 manufactured by Tamapoly Co., Ltd., etc.

並且,於本實施方式之感光性元件中,關於兩面之表面粗糙度,保護膜(C)滿足以下式(2)。 (2)300<RzC1 <600 此處,RzC1 表示保護膜(C)之與感光性樹脂組合物層(B)相接之側之面的表面粗糙度(nm)。 式(2)規定,保護膜(C)之與感光性樹脂組合物層(B)相接之側之表面粗糙度較小。藉此,感光性元件之解像性變得優異。 進而,較佳為1.1<RzC2 /RzC1 <10。 此處,RzC2 表示保護膜(C)之與相接於感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度(nm)。And, in the photosensitive element of this embodiment, the protective film (C) satisfies the following formula (2) about the surface roughness of both surfaces. (2) 300<Rz C1 <600 Here, Rz C1 represents the surface roughness (nm) of the surface of the side which contacts the photosensitive resin composition layer (B) of a protective film (C). The formula (2) stipulates that the surface roughness of the side of the protective film (C) in contact with the photosensitive resin composition layer (B) is small. Thereby, the resolution of a photosensitive element becomes excellent. Furthermore, it is preferable that 1.1<Rz C2 /Rz C1 <10. Here, Rz C2 represents the surface roughness (nm) of the surface opposite to the side contacting the photosensitive resin composition layer (B) of the protective film (C).

RzC1 及RzC2 只要滿足上述式(2)即可,並無特別限定,但具體而言,RzC1 較佳為350 nm~550 nm。RzC2 較佳為400 nm~5500 nm,更佳為450 nm~4500 nm。又,RzC2 /RzC1 更佳為1.5~9.0。Rz C1 and Rz C2 are not particularly limited as long as they satisfy the above formula (2), but specifically, Rz C1 is preferably 350 nm to 550 nm. Rz C2 is preferably from 400 nm to 5500 nm, more preferably from 450 nm to 4500 nm. Moreover, Rz C2 /Rz C1 is more preferably 1.5 to 9.0.

進而,於本實施方式之感光性元件中,關於兩面之表面粗糙度,支持膜(A)與保護膜(C)滿足以下式(3)。 (3)40<RzC2 /RzA2 此處,RzA2 表示支持膜(A)之與相接於感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度(nm),RzC2 表示保護膜(C)之與相接於感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度(nm)。 式(3)規定,於與相接於感光性樹脂組合物層(B)之側為相反側之面中,支持膜(A)之表面粗糙度與保護膜(C)之表面粗糙度存在一定以上之差異。藉此,可良好地防止將感光性元件捲取成卷狀時產生皺褶。Furthermore, in the photosensitive element of this embodiment, a support film (A) and a protective film (C) satisfy following formula (3) about the surface roughness of both surfaces. (3) 40<Rz C2 /Rz A2 Here, Rz A2 represents the surface roughness (nm) of the side opposite to the side of the support film (A) that is connected to the photosensitive resin composition layer (B), Rz C2 shows the surface roughness (nm) of the surface opposite to the side contacting the photosensitive resin composition layer (B) of a protective film (C). Formula (3) stipulates that, in the side opposite to the side that is connected to the photosensitive resin composition layer (B), there is a certain amount of surface roughness between the surface roughness of the support film (A) and the surface roughness of the protective film (C). the above differences. Thereby, generation|occurrence|production of wrinkles at the time of winding up a photosensitive element in roll shape can be prevented favorably.

RzC2 /RzA2 之上限值較佳為未達100,更佳為50<RzC2 /RzA2 <100。RzC2 /RzA2 進而較佳為40~80。The upper limit of Rz C2 /Rz A2 is preferably less than 100, more preferably 50<Rz C2 /Rz A2 <100. Rz C2 /Rz A2 is more preferably 40-80.

藉由滿足上述式(1)~式(3)全部,本發明之感光性元件具有良好之解像性,且可良好地防止捲取成卷狀時產生皺褶。By satisfying all of the above-mentioned formulas (1) to (3), the photosensitive element of the present invention has good resolution and can well prevent wrinkles when wound up into a roll.

[感光性元件卷] 將上述所說明之感光性元件捲繞而成之感光性元件卷亦為本發明之一態樣。[Photosensitive element volume] A photosensitive element roll obtained by winding the photosensitive element described above is also an aspect of the present invention.

感光性元件以長條狀捲取於卷芯,形成卷狀供使用。捲取長度無特別限定,但就捲之重量及操作容易性之觀點而言,較佳為320 m以下。若藉由1條感光性元件卷可層壓之基材較多,則效率良好,因此,就生產性之觀點而言,捲取長度較佳為100 m以上。The photosensitive element is wound up on a core in a strip shape, and is used in a roll shape. The winding length is not particularly limited, but is preferably 320 m or less from the viewpoint of the weight of the roll and ease of handling. If there are many substrates that can be laminated by one photosensitive element roll, the efficiency is good. Therefore, from the viewpoint of productivity, the roll length is preferably 100 m or more.

(卷芯) 有時卷芯亦被稱為芯。其形狀無特別限定,可為圓筒狀,亦可為圓柱狀。由於感光性元件係作為蝕刻阻劑或鍍覆阻劑、以及永久圖案被用於電子材料,故而較佳為實施有不發塵之處理者,較佳為塑膠樹脂製。作為塑膠樹脂之素材,較佳為較輕、強度優異、不發塵者。作為此種塑膠樹脂,例如可使用:聚丙烯(PP)樹脂、丙烯腈丁二烯苯乙烯(ABS)樹脂、尼龍樹脂、聚氯乙烯樹脂等,較佳為ABS樹脂。卷芯之直徑無特別限定,但為了於將感光性元件卷安裝於貼合機之情形時可安裝於裝置,較佳為2~5英吋之直徑,更佳為3英吋之直徑。卷芯之長度(於使用圓筒狀或圓柱狀卷芯之情形時,為其軸向長度)與感光性元件之寬度相比,可相同或較短。但,卷芯之長度較佳為大於感光性元件之寬度,以確保當捲取感光性元件時兩側有適度之突出部。由於環狀片材以插通之方式安裝於該突出部,故而較佳。又,亦可藉由在該突出部嵌合被稱為芯支架之軸承,而將感光性元件卷以不移動之方式懸掛保管。(core) Sometimes the winding core is also called the core. Its shape is not particularly limited, and may be cylindrical or columnar. Since the photosensitive element is used as an etching resist or a plating resist, and a permanent pattern for electronic materials, it is preferably processed without dust generation, and is preferably made of plastic resin. As the material of the plastic resin, it is preferable that it is light, has excellent strength, and does not generate dust. As such plastic resin, for example, polypropylene (PP) resin, acrylonitrile butadiene styrene (ABS) resin, nylon resin, polyvinyl chloride resin, etc. can be used, preferably ABS resin. The diameter of the core is not particularly limited, but it is preferably a diameter of 2 to 5 inches, more preferably a diameter of 3 inches, so that it can be mounted on a device when the photosensitive element roll is mounted on a laminating machine. The length of the core (in the case of using a cylindrical or cylindrical core, its axial length) may be the same as or shorter than the width of the photosensitive element. However, the length of the winding core is preferably longer than the width of the photosensitive element, so as to ensure that there are moderate protrusions on both sides when the photosensitive element is wound up. It is preferable because the ring-shaped sheet is attached to the protruding part in a manner inserted therethrough. Also, by fitting a bearing called a core holder to the protruding portion, the photosensitive element roll can be suspended and stored without moving.

感光性元件卷亦可以如下方式配置,即,卷端面保護構件與捲取之感光性元件之端面(上述帶狀感光性元件之寬度方向端部側)接觸。The photosensitive element roll may be arranged such that the roll end surface protection member is in contact with the end surface of the rolled photosensitive element (the width direction end side of the strip-shaped photosensitive element).

尤其是,於本實施方式之感光性元件卷中,由於如上所述般對支持膜(A)與保護膜(C)之兩面之表面粗糙度進行了規定,故而可良好地防止捲取時之皺褶。又,藉由將支持膜(A)與保護膜(C)之間之摩擦力保持為適當範圍,當將卷垂直於地面進行保管時,不易產生捲取偏移。進而,由於使用時亦不易產生因過度摩擦所引起之卷表面之帶電,故而容易防止灰塵或汙物之附著。In particular, in the photosensitive element roll of the present embodiment, since the surface roughness of both sides of the support film (A) and the protective film (C) are regulated as described above, it is possible to prevent unevenness during winding up well. wrinkled. In addition, by keeping the frictional force between the support film (A) and the protective film (C) in an appropriate range, when the roll is stored vertically to the ground, it is difficult to cause winding misalignment. Furthermore, since it is not easy to generate electrification on the surface of the roll caused by excessive friction during use, it is easy to prevent the adhesion of dust or dirt.

使用本實施方式之感光性元件或其卷形成抗蝕圖案之方法較佳為依序包括以下步驟: 積層步驟,其於基板上積層感光性元件; 曝光步驟,其對感光性元件之感光性樹脂組合物層進行曝光;及 顯影步驟,其將感光性樹脂組合物層之未曝光部顯影去除。The method for forming a resist pattern using the photosensitive element of this embodiment or its roll preferably includes the following steps in sequence: a lamination step, which laminates photosensitive elements on the substrate; an exposing step of exposing the photosensitive resin composition layer of the photosensitive element; and A development step, which develops and removes the unexposed part of the photosensitive resin composition layer.

於層壓步驟中,具體而言,自感光性元件將保護膜(C)剝離後,藉由貼合機將感光性樹脂組合物層加熱壓接於支持體(例如基板)表面,進行1次或複數次層壓。作為基板之材料,例如可例舉:銅、不鏽鋼(SUS)、玻璃、氧化銦錫(ITO)等。層壓時之加熱溫度一般而言為40℃~160℃。加熱壓接可藉由使用具備雙聯輥之二段式貼合機而進行,或者,使基板與感光性樹脂組合物層之積層物數次反覆地通過輥而進行。In the lamination step, specifically, after the protective film (C) is peeled off from the photosensitive element, the photosensitive resin composition layer is thermally and pressure-bonded to the surface of the support (for example, a substrate) by a laminating machine, and is carried out once. or multiple laminations. As a material of a board|substrate, copper, stainless steel (SUS), glass, indium tin oxide (ITO), etc. are mentioned, for example. The heating temperature during lamination is generally 40°C to 160°C. The thermocompression bonding can be performed by using a two-stage laminating machine equipped with double rollers, or by repeatedly passing the laminate of the substrate and the photosensitive resin composition layer through the rollers several times.

於曝光步驟中,使用曝光機將感光性樹脂組合物層曝光於活性光。曝光視需要可於剝離支持體後進行。於通過光罩進行曝光之情形時,曝光量可根據光源照度及曝光時間而決定,可使用光量計進行測定。於曝光步驟中,可進行直接成像曝光。於直接成像曝光中,在不使用光罩之情況下,於基板上藉由直接描繪裝置進行曝光。作為光源,使用波長350 nm~410 nm之半導體雷射或超高壓水銀燈。於藉由電腦控制描繪圖案之情形時,曝光量可根據曝光光源之照度及基板之移動速度而決定。In the exposure step, the photosensitive resin composition layer is exposed to active light using an exposure machine. Exposure can be performed after peeling off a support as needed. In the case of exposing through a photomask, the exposure amount can be determined according to the illuminance of the light source and the exposure time, and can be measured with a light meter. In the exposing step, direct imagewise exposure can be performed. In direct image exposure, exposure is performed on a substrate by a direct writing device without using a mask. As a light source, a semiconductor laser or an ultra-high pressure mercury lamp with a wavelength of 350 nm to 410 nm is used. In the case of computer-controlled pattern drawing, the exposure amount can be determined according to the illuminance of the exposure light source and the moving speed of the substrate.

曝光步驟中所使用之光照射方法較佳為選自投影曝光法、鄰近曝光法、接觸曝光法、直接成像曝光法、電子束直接描繪法中之至少1種方法,更佳為藉由投影曝光方法進行。The light irradiation method used in the exposure step is preferably at least one method selected from projection exposure method, proximity exposure method, contact exposure method, direct imaging exposure method, and electron beam direct drawing method, more preferably by projection exposure method to proceed.

於顯影步驟中,使用顯影裝置藉由顯影液將曝光後之感光性樹脂組合物層中之未曝光部或曝光部去除。曝光後,於感光性樹脂組合物層上存在支持膜之情形時,將其去除。繼而,使用包含鹼性水溶液之顯影液將未曝光部或曝光部顯影去除,獲得抗蝕圖像。In the developing step, the unexposed part or the exposed part in the exposed photosensitive resin composition layer is removed by using a developing device with a developing solution. After exposure, when a support film exists on a photosensitive resin composition layer, it removes it. Next, the unexposed part or the exposed part is developed and removed using a developer containing an alkaline aqueous solution to obtain a resist image.

作為鹼性水溶液,較佳為Na2 CO3 、K2 CO3 等之水溶液。鹼性水溶液可根據感光性樹脂組合物層之特性進行選擇,通常使用0.2質量%~2質量%之濃度之Na2 CO3 水溶液。亦可向鹼性水溶液中混合表面活性劑、消泡劑、用於促進顯影之少量有機溶劑等。顯影步驟中之顯影液之溫度較佳為於20℃~40℃之範圍內保持固定。The alkaline aqueous solution is preferably an aqueous solution of Na 2 CO 3 , K 2 CO 3 or the like. The alkaline aqueous solution can be selected according to the characteristics of the photosensitive resin composition layer, and a Na 2 CO 3 aqueous solution with a concentration of 0.2% to 2% by mass is usually used. A surfactant, an antifoaming agent, a small amount of organic solvent for promoting development, etc. may also be mixed into the alkaline aqueous solution. The temperature of the developer in the developing step is preferably kept constant within the range of 20°C to 40°C.

藉由上述步驟可獲得抗蝕圖案,視需要亦可進而於60℃~300℃下進行加熱步驟。藉由實施該加熱步驟,可提高抗蝕圖案之耐化學品性。於加熱步驟中,可使用利用熱風、紅外線、或遠紅外線之方式之加熱爐。A resist pattern can be obtained through the above steps, and a heating step at 60° C. to 300° C. can also be performed if necessary. By performing this heating step, the chemical resistance of the resist pattern can be improved. In the heating step, a heating furnace utilizing hot air, infrared rays, or far infrared rays can be used.

為了獲得導體圖案,亦可於顯影步驟或加熱步驟後,實施對形成有抗蝕圖案之基板進行蝕刻或鍍覆之導體圖案形成步驟。In order to obtain a conductive pattern, a conductive pattern forming step of etching or plating a substrate on which a resist pattern has been formed may be performed after the developing step or the heating step.

導體圖案之製造方法例如可藉由如下方式進行,即,使用金屬板或金屬皮膜絕緣板作為基板,藉由上述抗蝕圖案形成方法形成抗蝕圖案後,實施導體圖案形成步驟。於導體圖案形成步驟中,使用已知之蝕刻法或鍍覆法於藉由顯影而露出之基板表面(例如銅面)形成導體圖案。The method of manufacturing a conductive pattern can be performed, for example, by using a metal plate or a metal-coated insulating board as a substrate, forming a resist pattern by the above-mentioned resist pattern forming method, and then performing a conductive pattern forming step. In the conductive pattern forming step, a known etching method or plating method is used to form a conductive pattern on the surface of the substrate (such as a copper surface) exposed by development.

進而,於藉由上述導體圖案之製造方法製造導體圖案後,使用具有比顯影液更強之鹼性之水溶液,實施自基板剝離抗蝕圖案之剝離步驟,藉此可獲得具有所需之配線圖案之配線板(例如印刷配線板)。Furthermore, after the conductor pattern is produced by the above-mentioned production method of the conductor pattern, a stripping step of stripping the resist pattern from the substrate is performed using an aqueous solution having a stronger alkalinity than the developer, whereby a desired wiring pattern can be obtained. Wiring boards (such as printed wiring boards).

關於剝離用之鹼性水溶液(以下,亦稱為「剝離液」),並無特別限制,但通常使用2質量%~5質量%之濃度之NaOH或KOH之水溶液、或有機胺系剝離液。亦可於剝離液中加入少量水溶性溶劑。作為水溶性溶劑,例如可例舉醇等。剝離步驟中之剝離液之溫度較佳為處於40℃~70℃之範圍內。There is no particular limitation on the alkaline aqueous solution for stripping (hereinafter also referred to as "stripping solution"), but usually an aqueous solution of NaOH or KOH at a concentration of 2% to 5% by mass, or an organic amine-based stripping solution is used. A small amount of water-soluble solvent can also be added to the stripping solution. As a water-soluble solvent, alcohol etc. are mentioned, for example. The temperature of the stripping liquid in the stripping step is preferably in the range of 40°C to 70°C.

於本實施方式中,感光性元件或其卷可用於:印刷配線板之製造;IC(Integrated Circuit,積體電路)晶片搭載用引線框架之製造;金屬遮罩製造等金屬箔精密加工;球柵陣列(BGA)、晶片尺寸封裝體(CSP)等封裝體之製造;覆晶薄膜(COF)、帶式自動接合(TAB)等帶式基板之製造;半導體凸塊之製造;及ITO電極、定址電極、電磁波屏蔽罩等平板顯示器之間隔壁之製造。 再者,關於上述各參數之值,只要未特別說明,則按照下述實施例中之測定方法進行測定。 [實施例]In this embodiment, the photosensitive element or its roll can be used in: the manufacture of printed wiring boards; the manufacture of IC (Integrated Circuit, integrated circuit) chip mounting lead frame; metal foil precision processing such as metal mask manufacturing; ball grid Manufacture of array (BGA), chip size package (CSP) and other packages; manufacture of chip-on-film (COF), tape automated bonding (TAB) and other tape substrates; manufacture of semiconductor bumps; and ITO electrodes, addressing Manufacturing of partitions between flat panel displays such as electrodes and electromagnetic wave shielding covers. In addition, the value of each said parameter was measured according to the measuring method in the following Example, unless otherwise specified. [Example]

接下來,例舉實施例及比較例而更加具體地說明本實施方式。然而,本實施方式只要不脫離其主旨,則並不限定於以下實施例。實施例中之物性藉由以下方法進行測定。Next, the present embodiment will be described more specifically with examples and comparative examples given. However, this embodiment is not limited to the following examples unless it deviates from the gist. The physical properties in the examples were measured by the following methods.

[表面粗糙度之測定] 對於支持膜及保護膜測定表面粗糙度。向玻璃板上滴一滴水,其後,將各膜之測定面朝上進行貼附,將所得者設為測定樣品。 表面粗糙度之測定係基於JIS B0601-2001所規定之方法,使用作為雷射式顯微鏡之Olympus股份有限公司製造之商品名「LEXT OLS4100」,將於任意10處以測定長度258 μm所測得之Rz之值之平均值設為最大高度Rz(nm)。再者,測定時之溫度設為23~25℃。 將支持膜之與感光性樹脂組合物層相接之側之面的表面粗糙度設為RzA1 ,將支持膜之與相接於感光性樹脂組合物層之側為相反側之面的表面粗糙度設為RzA2 ,將保護膜之與感光性樹脂組合物層相接之側之面的表面粗糙度設為RzC1 ,將保護膜之與相接於感光性樹脂組合物層之側為相反側之面的表面粗糙度設為RzC2[Measurement of Surface Roughness] The surface roughness of the support film and the protective film was measured. One drop of water was dropped on a glass plate, and after that, each film was attached with the measurement surface facing up, and the resultant was used as a measurement sample. The measurement of surface roughness is based on the method stipulated in JIS B0601-2001, using the product name "LEXT OLS4100" manufactured by Olympus Co., Ltd. as a laser microscope, Rz measured at any 10 points with a measurement length of 258 μm The average value of the values was set as the maximum height Rz (nm). In addition, the temperature at the time of measurement was made into 23-25 degreeC. Let the surface roughness of the side of the support film that is in contact with the photosensitive resin composition layer be Rz A1 , and set the surface roughness of the side of the support film that is opposite to the side that is in contact with the photosensitive resin composition layer The surface roughness of the side of the protective film that is in contact with the photosensitive resin composition layer is set as Rz C1 , and the side of the protective film that is in contact with the photosensitive resin composition layer is the opposite The surface roughness of the side surface was Rz C2 .

[直徑2 μm以上5 μm以下之粒子之個數之測定] 將偏光鏡(OLS4000-QWP)插入至作為雷射式顯微鏡之Olympus股份有限公司製造之商品名「LEXT OLS4100」之物鏡之上部。繼而,使用Universal Giken股份有限公司製造之多孔質吸附板「65F-HG」及真空泵,將切斷成30 mm×30 mm之支持膜樣品水平地吸引固定於雷射顯微鏡之載台上。藉由物鏡50倍之雷射光量60(雷射波長為405 nm)觀察所吸引固定之支持膜。此時,將支持膜厚度方向之中心2 μm之區域定為測定區間,以確保不會發生由支持膜之正面及背面之反射光所引起之暈光。繼而,以測定區域260 μm×260 μm、測定部位數49點進行測量。測量係於任意不同之部位重複進行9次。 於二值化=閾值以上、閾值1=10%、小粒子去除=15、填孔=20之條件下對所測得之圖像進行處理,藉此製作柱狀圖。對柱狀圖之最大直徑(μm)為2以上5以下之粒子之個數進行累加,藉此算出直徑2 μm以上5 μm以下之粒子之個數。[Determination of the number of particles with a diameter of 2 μm or more and 5 μm or less] A polarizer (OLS4000-QWP) was inserted into the upper part of the objective lens of the product name "LEXT OLS4100" manufactured by Olympus Co., Ltd. which is a laser microscope. Then, using a porous adsorption plate "65F-HG" manufactured by Universal Giken Co., Ltd. and a vacuum pump, the support film sample cut into 30 mm×30 mm was horizontally sucked and fixed on the stage of the laser microscope. The attracted and immobilized support film was observed through the objective lens with 50 times the laser light intensity 60 (laser wavelength is 405 nm). At this time, the central 2 μm area in the thickness direction of the support film is defined as the measurement interval to ensure that no halo caused by the reflected light from the front and back of the support film will occur. Then, measurement was performed with a measurement area of 260 μm×260 μm and a number of measurement sites of 49 points. Measurements were repeated 9 times at any different locations. Under the conditions of binarization = above threshold, threshold 1 = 10%, small particle removal = 15, hole filling = 20, the measured image was processed to make a histogram. The number of particles whose maximum diameter (μm) in the histogram is between 2 and 5 is accumulated to calculate the number of particles with a diameter of 2 μm to 5 μm.

[鈦元素含量之測定] 支持膜中之鈦元素含量之測定係使用作為螢光X射線分析裝置之島津製作所股份有限公司製造之商品名「XRF-1800」,於定量分子TiO2 、X射線管靶材Rh(4.0 kW)、電壓40 kV、電流95 kA、分光晶體LiF、檢測器SC、2θ=86.14 deg、測定時間40秒之條件下進行。[Determination of titanium element content] The measurement of the titanium element content in the support film is to use the product name "XRF-1800" manufactured by Shimadzu Corporation as a fluorescent X-ray analysis device, in quantitative molecular TiO 2 , X-ray tube Target material Rh (4.0 kW), voltage 40 kV, current 95 kA, spectroscopic crystal LiF, detector SC, 2θ=86.14 deg, measurement time 40 seconds.

[評價用樣品之製作方法] 評價用樣品藉由如下方式製作。 <感光性元件之製作> (實施例1~7、比較例1~8) 將下文所揭示之表1所示之成分(其中,各成分之數字表示作為固形物成分之調配量(質量份))、及以固形物成分濃度成為55%之方式所計量之甲基乙基酮充分地攪拌、混合,獲得感光性樹脂組合物調合液。將表1中所示之成分之詳細內容示於表2。繼而,於寬度500 mm之支持膜之表面塗佈感光性樹脂組合物調合液之溶液,利用90℃之熱風歷時1分鐘使之乾燥,藉此形成感光性樹脂組合物層。此時,加熱後之感光性樹脂組合物層之厚度成為5 μm。進而,於感光性樹脂組合物層之未積層支持膜之側之表面上貼合保護膜,獲得感光性元件。進而,將感光性元件卷繞於外徑3.5英吋之圓筒狀塑膠管,使用與捲取軸寬度方向平行配置之加壓輥,對塑膠管以線狀施加壓力,以7 kg之張力捲取500 m,獲得感光性元件之卷。 將實施例及比較例中分別使用之支持膜之種類及物性示於表3,將實施例及比較例中分別使用之保護膜之種類及物性示於表4。[How to make samples for evaluation] Samples for evaluation were prepared as follows. <Production of photosensitive elements> (Examples 1-7, Comparative Examples 1-8) The components shown in Table 1 (wherein, the numbers of each component represent the compounded amount (parts by mass) as solid content) and the methyl ethyl group measured so that the solid content concentration becomes 55% The ketones were sufficiently stirred and mixed to obtain a photosensitive resin composition preparation liquid. Table 2 shows details of the components shown in Table 1. Then, the solution of the photosensitive resin composition preparation solution was coated on the surface of the support film with a width of 500 mm, and it was dried with hot air at 90° C. for 1 minute to form a photosensitive resin composition layer. At this time, the thickness of the photosensitive resin composition layer after heating was 5 micrometers. Furthermore, a protective film was bonded to the surface of the photosensitive resin composition layer on the side where the support film was not laminated to obtain a photosensitive element. Furthermore, the photosensitive element is wound on a cylindrical plastic tube with an outer diameter of 3.5 inches, and a pressure roller arranged parallel to the width direction of the take-up shaft is used to apply pressure to the plastic tube in a linear form, and the coil is wound with a tension of 7 kg. Take 500 m to obtain the roll of photosensitive element. Table 3 shows the types and physical properties of the support films used in Examples and Comparative Examples, and Table 4 shows the types and physical properties of protective films used in Examples and Comparative Examples.

<基板整面> 作為圖像性之評價基板,將積層有35 μm壓延銅箔之0.4 mm厚之銅箔積層板浸漬於Mec Etch Bond CZ-8101(MEC股份有限公司製造),進行粗糙化處理直至蝕刻量達到1 μm。<Whole surface of substrate> As a board for image evaluation, a 0.4 mm thick copper foil laminate laminated with 35 μm rolled copper foil was dipped in Mec Etch Bond CZ-8101 (manufactured by MEC Co., Ltd.) and roughened until the amount of etching reached 1 μm.

<層壓> 一面剝離感光性元件之保護膜,一面藉由加熱輥貼合機(旭化成股份有限公司製造,AL-700),於輥溫度105℃下將感光性元件層壓於預熱至50℃之圖像性之評價基板,藉此獲得感光性元件積層體。氣壓設為0.35 MPa,層壓速度設為1.5 m/min。<Laminated> While peeling off the protective film of the photosensitive element, the photosensitive element is laminated on the image preheated to 50°C at a roll temperature of 105°C with a heated roll laminating machine (manufactured by Asahi Kasei Co., Ltd., AL-700). The performance evaluation substrate, thereby obtaining the photosensitive element laminated body. The air pressure was set to 0.35 MPa, and the lamination speed was set to 1.5 m/min.

<曝光> 於層壓後經過2小時後之感光性元件積層體之支持膜表面側,藉由分割投影曝光裝置(牛尾電機股份有限公司製造,UX7-Square70),使用具有曝光部與未曝光部之寬度為1:1之比率之線圖案的曝光遮罩,進行曝光。當以上述曝光部與未曝光部之寬度為1:1之比率之線圖案進行曝光、顯影時,曝光係以如下曝光量進行,即,曝光遮罩之曝光部=未曝光部=5 μm之部位的顯影後之感光性樹脂組合物圖案之曝光部與未曝光部之實測寬度成為5 μm之曝光量。<Exposure> Two hours after the lamination, the surface side of the support film of the photosensitive element laminate was divided into a projection exposure device (manufactured by Ushio Electric Co., Ltd., UX7-Square70) using the width of the exposed part and the unexposed part. 1:1 ratio line pattern exposure mask for exposure. When exposing and developing a line pattern with a width ratio of 1:1 between the exposed portion and the unexposed portion, the exposure is performed at the following exposure amount, that is, the exposed portion of the exposure mask = the unexposed portion = 5 μm The measured width of the exposed part and the non-exposed part of the photosensitive resin composition pattern after the image development of a part was the exposure amount of 5 micrometers.

<顯影> 將感光性元件積層體之支持膜剝離後,使用鹼性顯影機(富士機工股份有限公司製造,乾膜用顯影機),歷時特定時間噴霧30℃之1質量%Na2 CO3 水溶液進行顯影。顯影噴霧之時間設為最短顯影時間之2倍之時間,顯影後之水洗噴霧之時間設為最短顯影時間之2倍之時間。此時,將未曝光部分之感光性樹脂組合物層完全溶解所需之最短時間設為最短顯影時間。<Development> After peeling off the support film of the photosensitive element laminate, use an alkaline developer (manufactured by Fuji Kiko Co., Ltd., a developer for dry film) to spray a 1% by mass Na 2 CO 3 aqueous solution at 30°C for a specified period of time Develop. The developing spray time is set to be twice the shortest developing time, and the washing spraying time after developing is set to be twice the shortest developing time. At this time, the shortest time required for the complete dissolution of the photosensitive resin composition layer in the unexposed portion was defined as the shortest developing time.

[評價] 對於所獲得之感光性元件,以如下方式針對捲取時之皺褶、及解像性進行評價。[Evaluation] About the obtained photosensitive element, the wrinkle at the time of winding up, and resolution were evaluated as follows.

<捲取時之皺褶> 目測觀察所獲得之感光性元件之卷,按照以下基準進行評價。 優:卷上無皺褶 良:卷上有皺褶,但保管3天後消失 可:卷上有皺褶,但保管7天後消失 不可:卷上有皺褶,保管7天後亦未消失<Wrinkles during coiling> The roll of the obtained photosensitive element was observed visually, and it evaluated based on the following reference|standard. Excellent: no wrinkles on the roll Good: There are wrinkles on the roll, but they disappear after 3 days of storage Possible: There are wrinkles on the roll, but they disappear after 7 days of storage Impossible: There are wrinkles on the roll, which have not disappeared after 7 days of storage

<解像性> 於上述曝光步驟中,使用具有曝光部與未曝光部之寬度為1:1之比率之線圖案的曝光遮罩進行曝光。按照上述顯影條件進行顯影,藉由光學顯微鏡對硬化光阻線未曝光或崩塌而正常形成之最小線寬進行評價,按照以下基準進行評價。若為「可」以上,則設為合格。 優:3 μm以下 良:超過3 μm且為4 μm以下 可:超過4 μm且為5 μm以下 不可:超過5 μm<Resolution> In the said exposure process, exposure was performed using the exposure mask which has the line pattern of the ratio of the width of the exposed part and the unexposed part of 1:1. Development was carried out under the above-mentioned development conditions, and the minimum line width normally formed without exposure or collapse of the hardened resist line was evaluated by an optical microscope, and the evaluation was performed according to the following criteria. If it is "possible" or more, it is regarded as a pass. Excellent: below 3 μm Good: more than 3 μm and less than 4 μm Acceptable: more than 4 μm and less than 5 μm Impossible: more than 5 μm

將對於各實施例之感光性元件之評價結果示於表5,將對於各比較例之感光性元件之評價結果示於表6。Table 5 shows the evaluation results of the photosensitive elements of the respective examples, and Table 6 shows the evaluation results of the photosensitive elements of the respective comparative examples.

[表1] 化合物 組合物1 組合物2 組合物3 組合物4 組合物5 A-1 57    57       A-2    57    57    A-3             57 B-1 17 15 20 15 20 B-2 6 8 6 6 6 B-3 11 11 7 14 9 B-4 5 5 5 5 5 C-1 3 3 3 3 3 C-2    0.1          C-3       0.1       C-4 0.1       0.1 0.1 D-1 0.2 0.2 0.2 0.2 0.2 D-2 0.3 0.3 0.3 0.3 0.3 合計 99.1 99.1 98.1 100.1 100.1 [Table 1] compound Composition 1 Composition 2 Composition 3 Composition 4 Composition 5 A-1 57 57 A-2 57 57 A-3 57 B-1 17 15 20 15 20 B-2 6 8 6 6 6 B-3 11 11 7 14 9 B-4 5 5 5 5 5 C-1 3 3 3 3 3 C-2 0.1 C-3 0.1 C-4 0.1 0.1 0.1 D-1 0.2 0.2 0.2 0.2 0.2 D-2 0.3 0.3 0.3 0.3 0.3 total 99.1 99.1 98.1 100.1 100.1

[表2] 記號 結構 A-1 甲基丙烯酸/甲基丙烯酸甲酯/苯乙烯/丙烯酸正丁酯=25/10/60/5,Mw=28,000之54%丙酮溶液 A-2 甲基丙烯酸/苯乙烯/甲基丙烯酸苄酯=25/60/15,Mw=19,000之54%丙酮溶液 A-3 甲基丙烯酸/甲基丙烯酸環己酯/丙烯酸苄酯=22/50/28,Mw=30,000之54%丙酮溶液 B-1 對季戊四醇加成平均15莫耳之環氧乙烷所得之四甲基丙烯酸酯 B-2 向雙酚A之兩端分別加成平均2莫耳之環氧乙烷所得之聚乙二醇之二甲基丙烯酸酯 B-3 向雙酚A之兩端分別加成平均1莫耳之環氧乙烷所得之聚乙二醇之二甲基丙烯酸酯 B-4 聚丙二醇(丙二醇之重複單元為12莫耳)之二甲基丙烯酸酯 C-1 2-(鄰氯苯基)-4,5-二苯咪唑二聚物 C-2 9,10-二苯基蒽 C-3 9,10-雙(異丙氧基羰基甲氧基)蒽、(川崎化成工業股份有限公司製造,Anthracure UVS-107) C-4 4,4'-雙(二乙基胺基)二苯甲酮 D-1 鑽石綠 D-2 隱色結晶紫 [Table 2] mark structure A-1 Methacrylic acid/methyl methacrylate/styrene/n-butyl acrylate=25/10/60/5, Mw=28,000 in 54% acetone solution A-2 Methacrylic acid/styrene/benzyl methacrylate=25/60/15, 54% acetone solution of Mw=19,000 A-3 Methacrylic acid/cyclohexyl methacrylate/benzyl acrylate=22/50/28, Mw=30,000 in 54% acetone solution B-1 Tetramethacrylate obtained by adding an average of 15 moles of ethylene oxide to pentaerythritol B-2 Dimethacrylate of polyethylene glycol obtained by adding an average of 2 moles of ethylene oxide to both ends of bisphenol A B-3 Dimethacrylate of polyethylene glycol obtained by adding an average of 1 mole of ethylene oxide to both ends of bisphenol A B-4 Dimethacrylate of polypropylene glycol (the repeating unit of propylene glycol is 12 moles) C-1 2-(O-Chlorophenyl)-4,5-diphenylimidazole dimer C-2 9,10-Diphenylanthracene C-3 9,10-bis(isopropoxycarbonylmethoxy)anthracene (manufactured by Kawasaki Chemical Industry Co., Ltd., Anthracure UVS-107) C-4 4,4'-Bis(diethylamino)benzophenone D-1 diamond green D-2 Leuco Crystal Violet

[表3] 記號 表面粗糙度/nm 直徑2 μm以上5 μm以下之粒子之個數/個/30 mm2 鈦元素含量/ppm 平滑化處理 厚度/μm 與感光性樹脂組合物層相接之側 RzA1 另一側 RzA2 E-1 36 62 8 0 16 E-2 73 92 9 10 16 E-3 18 63 11 0 12 E-4 23 53 33 0 16 E-5 115 115 49 0 16 [table 3] mark Surface roughness/nm The number of particles with a diameter above 2 μm and below 5 μm/piece/30 mm 2 Titanium content/ppm Smoothing Thickness/μm The side in contact with the photosensitive resin composition layer Rz A1 The other side Rz A2 E-1 36 62 8 0 none 16 E-2 73 92 9 10 none 16 E-3 18 63 11 0 have 12 E-4 twenty three 53 33 0 none 16 E-5 115 115 49 0 none 16

[表4] 記號 商品名 製造商 種類 表面粗糙度/nm 與感光性樹脂組合物層相接之側 RzC1 另一側 RzC2 F-1 Torayfan#25A-KW37 東麗股份有限公司 OPP 160 160 F-2 MA-411 Oji F-Tex股份有限公司 OPP 500 4000 F-3 E-200 Oji F-Tex股份有限公司 OPP 600 600 F-4 GF-818 Tamapoly股份有限公司 LDPE 490 490 [Table 4] mark Product name manufacturer type Surface roughness/nm The side in contact with the photosensitive resin composition layer Rz C1 The other side Rz C2 F-1 Torayfan#25A-KW37 toray co., ltd. OPP 160 160 F-2 MA-411 Oji F-Tex Co., Ltd. OPP 500 4000 F-3 E-200 Oji F-Tex Co., Ltd. OPP 600 600 F-4 GF-818 Tamapoly Co., Ltd. LDPE 490 490

[表5]    實施例1 實施例2 實施例3 實施例4 實施例5 實施例6 實施例7 組合物 1 1 1 1 3 4 5 支持膜 記號 E-1 E-2 E-3 E-4 E-4 E-3 E-2 RzA1 36 73 18 23 23 18 73 RzA2 62 92 63 53 53 63 92 RzA2 /RzA1 1.7 1.3 3.5 2.3 2.3 3.5 1.3 保護膜 記號 F-2 F-2 F-2 F-2 F-2 F-2 F-2 RzC1 500 500 500 500 500 500 500 RzC2 4000 4000 4000 4000 4000 4000 4000 RzC2 /RzC1 8 8 8 8 8 8 8 RzC2 /RzA2 64.5 43.5 63.5 75.5 75.5 63.5 43.5 評價1 捲取時之皺褶 評價2 解像性 [table 5] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Example 7 combination 1 1 1 1 3 4 5 support membrane mark E-1 E-2 E-3 E-4 E-4 E-3 E-2 Rz A1 36 73 18 twenty three twenty three 18 73 Rz A2 62 92 63 53 53 63 92 Rz A2 /Rz A1 1.7 1.3 3.5 2.3 2.3 3.5 1.3 protective film mark F-2 F-2 F-2 F-2 F-2 F-2 F-2 Rz C1 500 500 500 500 500 500 500 Rz C2 4000 4000 4000 4000 4000 4000 4000 Rz C2 /Rz C1 8 8 8 8 8 8 8 Rz C2 /Rz A2 64.5 43.5 63.5 75.5 75.5 63.5 43.5 Evaluation 1 Wrinkles during winding excellent good excellent excellent excellent excellent good Evaluation 2 Resolution excellent excellent excellent excellent good excellent excellent

[表6]    比較例1 比較例2 比較例3 比較例4 比較例5 比較例6 比較例7 比較例8 組合物 1 1 1 2 1 2 4 5 支持膜 記號 E-1 E-2 E-3 E-5 E-5 E-1 E-2 E-3 RzA1 36 73 18 115 115 36 73 18 RzA2 62 92 63 115 115 62 92 63 RzA2 /RzA1 1.7 1.3 3.5 1.0 1.0 1.7 1.3 3.5 保護膜 記號 F-1 F-1 F-1 F-2 F-2 F-3 F-4 F-4 RzC1 160 160 160 500 500 600 700 700 RzC2 160 160 160 4000 4000 600 700 700 RzC2 /RzC1 1 1 1 8 8 1 1 1 RzC2 /RzA2 2.6 1.7 2.5 34.8 34.8 9.7 7.6 11.1 評價1 捲取時之皺褶 不可 不可 不可 不可 不可 不可 評價2 解像性 不可 不可 不可 不可 [Table 6] Comparative example 1 Comparative example 2 Comparative example 3 Comparative example 4 Comparative Example 5 Comparative example 6 Comparative Example 7 Comparative Example 8 combination 1 1 1 2 1 2 4 5 support membrane mark E-1 E-2 E-3 E-5 E-5 E-1 E-2 E-3 Rz A1 36 73 18 115 115 36 73 18 Rz A2 62 92 63 115 115 62 92 63 Rz A2 /Rz A1 1.7 1.3 3.5 1.0 1.0 1.7 1.3 3.5 protective film mark F-1 F-1 F-1 F-2 F-2 F-3 F-4 F-4 Rz C1 160 160 160 500 500 600 700 700 Rz C2 160 160 160 4000 4000 600 700 700 Rz C2 /Rz C1 1 1 1 8 8 1 1 1 Rz C2 /Rz A2 2.6 1.7 2.5 34.8 34.8 9.7 7.6 11.1 Evaluation 1 Wrinkles during winding can't can't can't good good can't can't can't Evaluation 2 Resolution excellent excellent excellent can't can't good can't can't

自表5可知,於上述式(1)~(3)全部得到滿足之實施例中,具有優異之解像性,且可良好地防止捲取成卷狀時產生皺褶。As can be seen from Table 5, in the examples satisfying all the above-mentioned formulas (1) to (3), the resolution is excellent, and the occurrence of wrinkles when wound into a roll can be well prevented.

相對於此,如表6所示,於不滿足式(1)之情形時,即,RzA1 大於100之情形時,解像性降低。 又,於不滿足式(2)之情形時,即,RzC1 為300以下或600以上之情形時,解像性不充分,或捲取時看到皺褶產生。 又,於不滿足式(3)之情形時,即,RzC2 /RzA2 為40以下之情形時,解像性不充分,又,捲取時亦看到皺褶產生。On the other hand, as shown in Table 6, when the formula (1) is not satisfied, that is, when Rz A1 is greater than 100, the resolution is lowered. Also, when the formula (2) is not satisfied, that is, when Rz C1 is 300 or less or 600 or more, the resolution is not sufficient, or wrinkles are observed during winding. Also, when the formula (3) is not satisfied, that is, when Rz C2 /Rz A2 is 40 or less, the resolution is insufficient, and wrinkles are also observed during winding.

以上,對於本發明之實施方式進行了說明,但本發明並不限定於此,可於不脫離發明主旨之範圍內適當地進行變更。 [產業上之可利用性]As mentioned above, although embodiment of this invention was described, this invention is not limited to this, It can change suitably in the range which does not deviate from the summary of invention. [Industrial availability]

藉由使用本發明之感光性元件,可兼顧解像性之提高與捲取時之皺褶防止,可廣泛地用作形成抗蝕圖案時之乾膜抗蝕劑。By using the photosensitive element of the present invention, both the improvement of resolution and the prevention of wrinkles during winding can be achieved, and it can be widely used as a dry film resist when forming a resist pattern.

RzA1 :表面粗糙度 RzA2 :表面粗糙度 RzC1 :表面粗糙度 RzC2 :表面粗糙度Rz A1 : surface roughness Rz A2 : surface roughness Rz C1 : surface roughness Rz C2 : surface roughness

圖1係模式性地表示本發明之感光性元件之一構成例的剖視圖。Fig. 1 is a cross-sectional view schematically showing an example of the configuration of the photosensitive element of the present invention.

RzA1:表面粗糙度 Rz A1 : surface roughness

RzA2:表面粗糙度 Rz A2 : surface roughness

RzC1:表面粗糙度 Rz C1 : surface roughness

RzC2:表面粗糙度 Rz C2 : surface roughness

Claims (15)

一種感光性元件,其特徵在於:其係依序具有支持膜(A)、感光性樹脂組合物層(B)及保護膜(C)者,且由JIS B0601-2001規定的上述支持膜(A)之與上述感光性樹脂組合物層(B)相接之側之面的表面粗糙度RzA1(nm)、上述支持膜(A)之與相接於上述感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度RzA2(nm)、上述保護膜(C)之與上述感光性樹脂組合物層(B)相接之側之面的表面粗糙度RzC1(nm)、及上述保護膜(C)之與相接於上述感光性樹脂組合物層(B)之側為相反側之面的表面粗糙度RzC2(nm)滿足以下(1)~(3):(1)1<RzA1<100(2)300<RzC1<600(3)40<RzC2/RzA2A photosensitive element, characterized in that: it has a support film (A), a photosensitive resin composition layer (B) and a protective film (C) in sequence, and the above-mentioned support film (A) specified by JIS B0601-2001 ), the surface roughness Rz A1 (nm) of the surface of the side that is in contact with the photosensitive resin composition layer (B) above, the The surface roughness Rz A2 (nm) of the surface on the opposite side, the surface roughness Rz C1 (nm) of the surface of the protective film (C) that is in contact with the photosensitive resin composition layer (B) , and the surface roughness Rz C2 (nm) of the surface of the above-mentioned protective film (C) that is opposite to the side that is in contact with the above-mentioned photosensitive resin composition layer (B) satisfies the following (1) ~ (3): ( 1)1<Rz A1 <100(2)300<Rz C1 <600(3)40<Rz C2 /Rz A2 . 如請求項1之感光性元件,其中1<RzA2<200。 The photosensitive element as claimed in item 1, wherein 1<Rz A2 <200. 如請求項1或2之感光性元件,其中1.1<RzA2/RzA1<7。 The photosensitive element as claimed in claim 1 or 2, wherein 1.1<Rz A2 /Rz A1 <7. 如請求項1或2之感光性元件,其中1.1<RzC2/RzC1<10。 The photosensitive element as claimed in item 1 or 2, wherein 1.1<Rz C2 /Rz C1 <10. 如請求項1或2之感光性元件,其中50<RzC2/RzA2<100。 The photosensitive element according to claim 1 or 2, wherein 50<Rz C2 /Rz A2 <100. 如請求項1或2之感光性元件,其中上述支持膜(A)中所含之直徑2μm 以上5μm以下之粒子之個數為30個/30mm2以下。 The photosensitive element according to claim 1 or 2, wherein the number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) is 30 particles/30 mm 2 or less. 如請求項1或2之感光性元件,其中上述支持膜(A)中所含之直徑2μm以上5μm以下之粒子之個數為15個/30mm2以下。 The photosensitive element according to claim 1 or 2, wherein the number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) is 15 particles/30 mm 2 or less. 如請求項1或2之感光性元件,其中上述支持膜(A)中所含之直徑2μm以上5μm以下之粒子之個數為10個/30mm2以下。 The photosensitive element according to claim 1 or 2, wherein the number of particles with a diameter of 2 μm to 5 μm contained in the support film (A) is 10 particles/30 mm 2 or less. 如請求項1或2之感光性元件,其中上述支持膜(A)中所含之鈦元素含量為1ppm以上20ppm以下。 The photosensitive element according to claim 1 or 2, wherein the content of the titanium element contained in the above-mentioned support film (A) is not less than 1 ppm and not more than 20 ppm. 如請求項1或2之感光性元件,其中對上述支持膜(A)之至少單面實施有平滑化處理。 The photosensitive element according to claim 1 or 2, wherein at least one side of the support film (A) is smoothed. 如請求項1或2之感光性元件,其中上述支持膜(A)之膜厚為5μm以上12μm以下。 The photosensitive element according to claim 1 or 2, wherein the film thickness of the support film (A) is not less than 5 μm and not more than 12 μm. 如請求項1或2之感光性元件,其中上述保護膜(C)之表面包含聚丙烯樹脂。 The photosensitive element according to claim 1 or 2, wherein the surface of the protective film (C) contains polypropylene resin. 一種感光性元件之捲繞體,其係將如請求項1至12中任一項之感光性元件捲繞而成。 A winding body of a photosensitive element, which is formed by winding the photosensitive element according to any one of Claims 1 to 12. 一種抗蝕圖案之形成方法,其包括:積層步驟,其於基板上積層如請求項1至12中任一項之感光性元件;曝光步驟,其對該感光性元件之感光性樹脂組合物層進行曝光;及顯影步驟,其將該感光性樹脂組合物層之未曝光部顯影去除。 A method for forming a resist pattern, comprising: a layering step of laminating the photosensitive element according to any one of Claims 1 to 12 on a substrate; an exposure step of layering the photosensitive resin composition layer of the photosensitive element performing exposure; and a developing step, which develops and removes the unexposed portion of the photosensitive resin composition layer. 如請求項14之抗蝕圖案之形成方法,其藉由投影曝光方法實施上述曝光步驟。 The method for forming a resist pattern according to claim 14, which implements the above-mentioned exposure step by a projection exposure method.
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