TWI668725B - Control of etch rate using modeling, feedback and impedance match - Google Patents

Abstract

The method used to achieve the etch rate is described. The method includes receiving a calculation variable associated with processing a work piece in a plasma chamber. The method further includes passing the calculation variable through a model to generate a value of the calculation variable at an output end of the model, identifying a calculation processing rate associated with the value, and identifying a predetermined process based on the calculation processing rate. rate. The method also includes identifying a predetermined variable to be achieved at the output terminal based on the predetermined processing rate, and identifying characteristics associated with the real and imaginary parts of the predetermined variable. The method includes controlling a variable circuit component to achieve the characteristics to further achieve the predetermined variable.

Description

Control of etch rate using modelling, feedback and impedance matching

This embodiment relates to the use of modeling, feedback, and impedance matching circuits to control the etching rate.

In some plasma processing systems, a radio frequency (RF) generator is used to generate the RF signal. This RF signal is supplied to a plasma chamber to generate a plasma in the chamber.

Plasma is widely used for various operations, such as cleaning wafers, depositing oxides on wafers, etching oxides, etching wafers, and the like. In order to achieve wafer yield, it is important to control the uniformity of the plasma.

Against this background, the embodiments described in this disclosure have arisen.

The embodiments of the present disclosure provide a device, a method, and a computer program for controlling the etching rate using a modeling, feedback, and impedance matching circuit. We should understand that the present invention can be implemented in many ways, such as processes, devices, systems, devices, or methods on computer-readable media. Several embodiments are described below.

In some embodiments, uniformity control on the wafer is achieved in an etch reactor (eg, a 300 mm (mm) wafer etch reactor, a 200 mm wafer etch reactor, etc.). Affect etch Some factors of uniformity include the harmonic waves generated by the fundamental frequency with which the RF generator operates and the standing waves generated by the intermodulation distortion (IMD) frequency.

In various embodiments, the processor generates a model of a portion of a plasma system. A variable is determined at the output of the model. A parameter is determined based on the variable, such as an etching rate, a deposition rate, a gamma, and the like. The calculated parameter is compared with a predetermined parameter to determine whether the calculated parameter matches the predetermined parameter. Once a mismatch is determined, the capacitance of the variable capacitor in the impedance matching circuit and / or the inductance of the variable inductor in the impedance matching circuit is changed to achieve matching. When a match is reached, the uniformity of the plasma in the plasma chamber increases.

In several embodiments, a method to achieve an etch rate is described. The method includes receiving a calculation variable associated with processing a work piece in a plasma chamber. The plasma chamber is connected to an impedance matching circuit via a radio frequency (RF) transmission line. The impedance matching circuit is connected to an RF generator via an RF cable. The method further includes passing the calculation variable through a computer-generated model to generate a value of the calculation variable at the output of the computer-generated model, identifying a calculation processing rate associated with the value of the calculation variable, and based on the calculation processing Rate to identify a predetermined processing rate to be achieved. The method also includes identifying a predetermined variable to be achieved at the output of the computer-generated model based on the predetermined processing rate, and identifying a first characteristic associated with a real part of the predetermined variable. The first characteristic belongs to a first variable circuit component in the impedance matching circuit. The method includes controlling the first variable circuit component to achieve the first characteristic to further achieve the real part of the predetermined variable, and identifying a second characteristic associated with an imaginary part of the predetermined variable. The second characteristic belongs to a second variable circuit component in the impedance matching circuit. The method includes sending a signal to the second variable circuit component to achieve the second characteristic to further achieve the imaginary part of the predetermined variable.

In some embodiments, a host controller is described. The host controller includes a memory element for storing a plurality of variables, and a host processor connected to the memory element. The host processor is used to receive a calculation variable associated with processing a work piece in a plasma chamber, Passing the calculation variable through a computer-generated model to generate the value of the calculation variable at the output of the computer-generated model, and identifying a calculation processing rate associated with the value of the calculation variable. The host processor is further configured to identify a predetermined processing rate to be achieved based on the calculated processing rate, identify a predetermined variable at the output of the computer-generated model based on the predetermined processing rate, and identify a real variable with the predetermined variable. A first characteristic associated with the ministry. The first characteristic belongs to a first variable circuit component in the impedance matching circuit. The host processor is used to send a signal to the first variable circuit component to achieve the first characteristic to further achieve the real part of the predetermined variable, and to identify an The second characteristic. The second characteristic belongs to a second variable circuit component in the impedance matching circuit. The method includes sending a signal to the second variable circuit component to achieve the second characteristic to further achieve the imaginary part of the predetermined variable.

In several embodiments, a non-transitory computer-readable storage medium is described, the non-transitory computer-readable storage medium having an executable program stored thereon. The program instructs the processor to perform the following operations. These operations include receiving a calculation variable associated with processing a work piece in a plasma chamber. The operations further include passing the calculation variable through a computer-generated model to generate a value of the calculation variable at the output of the computer-generated model, identifying a calculation processing rate associated with the value of the calculation variable, and based on the calculation. The processing rate identifies a predetermined processing rate to be achieved. These operations also include identifying a predetermined variable to be reached at the output of the computer-generated model based on the predetermined processing rate, and identifying a first characteristic associated with a real part of the predetermined variable. The first characteristic belongs to a first variable circuit component in the impedance matching circuit. The operations include sending a signal to the first variable circuit component to achieve the first characteristic to further achieve the real part of the predetermined variable, and identifying a second characteristic associated with an imaginary part of the predetermined variable. . The second characteristic belongs to a second variable circuit component in the impedance matching circuit. The operations include sending a signal to the second variable circuit component to achieve the second characteristic to further achieve the imaginary part of the predetermined variable.

Some advantages of the above embodiments include the extent to which a plasma uniformity is achieved in the plasma chamber. The degree of uniformity is achieved by controlling a circuit component already in an impedance matching circuit. Therefore, the additional costs associated with achieving this uniformity are non-existent or minimal. In some embodiments, uniformity is achieved by adding a circuit component to the plasma chamber. The cost and time consumed for adding this circuit component is not high. The circuit component is controlled to achieve the uniformity.

Other advantages of the above embodiment include controlling one circuit element of the impedance matching circuit to control the real part of the variable, and controlling another circuit element of the impedance matching circuit to control the imaginary part of the variable. Separate control of different parts of a variable helps achieve uniformity. For example, a slight change in uniformity is achieved by controlling the imaginary part, and a large change in uniformity is achieved by controlling the real part.

Other aspects of the invention will be apparent from the following detailed description made in conjunction with the accompanying drawings.

102‧‧‧Variable Shunt Capacitor

104‧‧‧Variable capacitor

106‧‧‧Inductor

120‧‧‧workpiece

122‧‧‧ Plasma Chamber

130‧‧‧ Plasma system

132‧‧‧RF generator

134‧‧‧Impedance matching circuit

135‧‧‧Impedance matching circuit

137‧‧‧Variable inductor

138‧‧‧Drive

140A‧‧‧Computer-generated model

140B‧‧‧Computer Generated Model

140C‧‧‧Computer Generated Model

140D‧‧‧ Computer Generated Model

142A‧‧‧output

142B‧‧‧ Output

142C‧‧‧Output

142D‧‧‧output

144‧‧‧RF cable

150‧‧‧ Plasma System

152‧‧‧Impedance matching circuit

158‧‧‧Capacitor

162‧‧‧Variable shunt capacitor

164‧‧‧Inductor

168‧‧‧RF transmission line

172‧‧‧output

202‧‧‧Memory element

204‧‧‧Processor

212‧‧‧Local Controller

214‧‧‧Sensor

216‧‧‧RF Power Supply

218‧‧‧chuck

220‧‧‧up electrode

222‧‧‧upper surface

224‧‧‧Host Controller

226A‧‧‧Recipe

226B‧‧‧Recipe

226C‧‧‧Recipe

226D‧‧‧Recipe

227‧‧‧cable

250‧‧‧ Plasma System

252‧‧‧ Plasma System

254‧‧‧Impedance matching circuit

256‧‧‧Variable inductor

280‧‧‧Control System

282‧‧‧Motor

284‧‧‧Circuit Components

286‧‧‧Connector

290‧‧‧ input device

292‧‧‧Output device

294‧‧‧I / O interface

296‧‧‧I / O interface

298‧‧‧Network Interface Controller (NIC)

302‧‧‧Bus

306‧‧‧curve

310‧‧‧ Graph

The invention can best be understood with reference to the following detailed description made in conjunction with the accompanying drawings.

According to the embodiment described in this disclosure, FIG. 1 is a block diagram of a system for controlling a rate using a computer-generated model and an impedance matching circuit.

According to the embodiment described in this disclosure, FIG. 2 is a diagram of a plasma system, which is used to control the rate of etching or deposition using a computer-generated model and an impedance matching circuit.

According to the embodiment described in this disclosure, FIG. 3 is a diagram of a plasma system, which is used to control the rate of etching or deposition using a computer-generated model and an impedance matching circuit.

According to the embodiment described in this disclosure, FIG. 4 is a diagram of a plasma system, which is used to control the rate of etching or deposition using a computer-generated model and an impedance matching circuit.

According to the embodiment described in this disclosure, FIG. 5 is a diagram of a table used to explain the determination of the capacitance and inductance values of the impedance matching network. Complex voltage and current (complex voltage and current).

According to the embodiment described in this disclosure, FIG. 6 is a block diagram of a control system for controlling circuit elements.

According to the embodiment described in this disclosure, FIG. 7 is a diagram of a host controller of the system in FIGS. 1 to 4.

According to the embodiment described in this disclosure, FIG. 8 is a graph that plots the impedance of the node at the computer-generated model versus the harmonic frequency of the RF supply signal at a point on the RF transmission line, where This point on the RF transmission line corresponds to this node.

According to the embodiment described in this disclosure, FIG. 9 is a graph which plots the etching rate (relative to the radius of the substrate) of the etched substrate for different degrees of etch rate control.

The following embodiments describe a system and method for controlling etching rates using modeling, feedback, and impedance matching circuits. It will be apparent that the invention may be practiced without some or all of these specific details. In other cases, well-known processing operations have not been described in detail in order not to unnecessarily obscure the present invention.

FIG. 1 is a block diagram of an embodiment of a plasma system 130, which is used to control a rate (e.g., etch rate, deposition rate, change in gamma, Wait). The plasma system 130 includes an RF generator 132, a host controller 224, The anti-matching circuit 134 and the plasma chamber 122. Examples of the RF generator 132 include a 2 million hertz (MHz) RF generator, a 27 MHz RF generator, and a 60 MHz RF generator.

The RF generator 132 includes a local controller 212, a sensor 214, and a radio frequency (RF) power supply 216. In various embodiments, the sensor 214 is a voltage and current probe. The voltage and current probe is used to calibrate the RF generator 132 and complies with the National Institute of Standards and Technology (NIST) standards. For example, the sensor 214 used to calibrate the RF generator 132 is traceable to NIST. The NIST standard provides the sensor 214 with the degree of accuracy specified by the NIST standard. The sensor 214 is connected to the output terminal 172 of the RF generator 132.

In some embodiments, the sensor 214 is located outside the RF generator 132.

As used herein, a controller includes one or more processors, and one or more memory elements. Examples of processors include a central processing unit (CPU), a microprocessor, an application specific integrated circuit (ASIC), a programmable logic device (PLD), and the like. Examples of memory elements include read-only memory (ROM), random-access memory (RAM), or a combination thereof. Other examples of memory components include flash memory, redundant arrays of storage disks (RAID), non-transitory computer-readable media, hard drives, and the like.

In some embodiments, the RF supply 216 includes a driver (not shown) and an amplifier (not shown). The driver (eg, a signal generator, an RF signal generator, etc.) is connected to an amplifier, which is further connected to an RF cable 144. This drive is connected to the local controller 212.

The RF generator 132 is connected to the impedance matching circuit 134 via an RF cable 144. In several embodiments, the impedance matching circuit 134 is a circuit composed of one or more inductors and / or one or more capacitors. Each component (eg, inductor, capacitor, etc.) of the impedance matching circuit 134 is connected to another component of the impedance matching circuit 134 in series, or in parallel, or as a shunt.

The impedance matching circuit 134 is connected to the chuck 218 of the plasma chamber 122 via an RF transmission line 168. In various embodiments, the RF transmission line 168 includes a cylinder (eg, a channel, etc.) that is connected to the impedance matching network 134. There is an insulator and an RF rod in the hollow part of the cylinder. RF transmission line 168 further includes an RF key (such as an RF band, etc.), which is connected to the cylindrical RF rod at one end. The RF key is connected to a vertically placed cylindrical RF rod at the other end, and the RF rod is connected to the chuck 218 of the plasma chamber 122.

The plasma chamber 122 includes a chuck 218, an upper electrode 220, and other components (not shown), such as an upper dielectric ring surrounding the upper electrode 220, an upper electrode extension surrounding the upper dielectric ring, and The lower dielectric ring of the lower electrode, the lower electrode extension surrounding the lower dielectric ring, the upper plasma exclusion zone (PEZ) ring, the lower PEZ ring, and the like. The upper electrode 220 is located opposite the chuck 218 and faces the chuck. A work piece 120 is supported on the upper surface 222 of the chuck 218. Examples of the work piece 120 include a substrate, a wafer, a substrate on which an integrated circuit is formed, a substrate on which a material layer is deposited, a substrate on which an oxide is deposited, and the like. Each of the lower electrode and the upper electrode 220 is made of a metal, such as aluminum, an aluminum alloy, copper, or the like. The chuck 218 may be an electrostatic chuck (ESC) or a magnetic chuck. The upper electrode 220 is connected to a reference voltage, such as a ground voltage, a zero voltage, a negative voltage, and the like.

The host controller 224 is connected to the RF generator 132 via a cable 227 (eg, a cable that facilitates side-by-side transmission of data, a cable that facilitates serial transmission of data, or a universal serial bus (USB) cable). Local controller 212.

The host controller 224 includes a computer-generated model 140A. Examples of the computer-generated model 140A include a model of the RF cable 144 and the impedance matching circuit 134, or a model of the RF cable 144 and the impedance matching circuit 134 and at least a portion of the RF transmission line 168. This portion of the RF transmission line 168 extends from the output terminal of the impedance matching circuit 134 to a point on the RF transmission line 168.

A computer-generated model of a part of the plasma system 130 has a structure and function similar to that of the part. For example, the computer-generated model 140A includes a plurality of circuit elements, which represent a plurality of circuit components of a part of the plasma system 130, and the circuit elements have the same connection relationship as the circuit components. Further explanation, when the variable capacitor 104 of the impedance matching circuit 134 is connected in series with the inductor 106 of the impedance matching circuit 134, a variable capacitor (the computer software performance of the variable capacitor 104) Form) is connected in series with an inductor (the computer software representation of the inductor 106). As another explanation, when the variable shunt capacitor 102 of the impedance matching circuit 134 is connected to the variable capacitor 104 and the RF cable 144 in a T-shaped configuration, a variable shunt capacitor (of the variable shunt capacitor 102 The computer software representation) is connected in a T configuration with a variable capacitor (the computer software representation of the variable capacitor 104) and an RF cable model (the computer software representation of the RF cable 144). As another explanation, when the first capacitor of the impedance matching circuit 134 is connected in parallel with the second capacitor of the impedance matching circuit 134, a capacitor (a computer software representation of the first capacitor) is connected in parallel with a capacitor (the second capacitor). Computer software representation) connection. As another example, a computer-generated model has similar characteristics to the parts represented by the model, such as capacitance, resistance, inductance, impedance, complex voltage and current, and so on. The inductor 106 is connected in series with the RF transmission line 168 and the variable capacitor 104 connected to the RF cable 144.

In some embodiments, the complex voltage and current include the strength of the current, the strength of the voltage, and the phase between the current and the voltage.

Examples of a part of the plasma system include an RF cable, or an impedance matching circuit connected to the RF cable, or an RF transmission line connected to the impedance matching circuit, or a chuck connected to the RF transmission line, or a combination thereof. Examples of circuit components that are part of a plasma system include capacitors, inductors, and resistors. Examples of circuit components for computer-generated models include capacitors, inductors, and resistors.

In some embodiments, when a circuit element of the computer-generated model has characteristics similar to circuit components of a part of the plasma system 130 (such as capacitance, impedance, inductance, or a combination thereof, etc.), the circuit element represents The circuit assembly. For example, an inductor of the computer-generated model 140A has the same inductance as the inductor 106. As another example, a variable capacitor of the computer-generated model 140A has the same capacitance as the variable capacitor 104. As yet another example, the capacitance of the variable capacitor of the computer-generated model 140A has the same capacitance as the variable capacitor 102.

The computer-generated model is generated by a processor of the host controller 224.

The processor of the host controller 224 includes a recipe for generating plasma in the plasma chamber 122 and modifying characteristics (such as impedance, uniformity, etc.) of the plasma. In some embodiments, a recipe includes power and the operating frequency of the RF generator 132. The processor of the host controller 224 sends the power and operating frequency to the local controller 212 via the cable 227 so that the RF generator 132 operates at the power and frequency. When the RF generator 132 operates at the power and frequency, the RF generator 132 generates an RF signal having the power and frequency.

The recipe 226A of the host controller 224 includes an impedance, such as a desired impedance, etc., which is to be reached at the point between the output terminal of the impedance matching circuit 134 and the chuck 218 on the RF transmission line 168. This point is located at the output of the impedance matching circuit 134, or on the RF transmission line 168, or the input of the chuck 218. Formula 226A includes a correspondence relationship between the impedance at this point (for example, desired impedance, etc.) and the impedance of the output terminal 142A of the computer-generated model 140A, such as a relationship, a link, a one-to-one relationship, a pair A tabular relationship, a one-to-one relationship within a table, etc. In some embodiments, the recipe includes a form or part of a form.

In various embodiments, the formula 226A includes a correspondence between the value of another variable at the output end 142A of the computer-generated model 140A and the value of the other variable at that point (this point is located in the impedance matching circuit 134 and the upper electrode 220), rather than the correspondence between the impedance at that point and the impedance of the output terminal 142A of the computer-generated model 140A. Examples of other variables include voltage, current, etching rate, gamma, deposition rate, complex voltage and current, and so on.

In some embodiments, the desired impedance to be achieved is located at this point, and the computer-generated model 140A is a model of a part of the plasma system 130 between the output terminal 172 of the RF generator 132 and the point on the RF transmission line 168 . For example, when the desired impedance to be achieved is located at the input of the RF band of the RF transmission line 168, the computer-generated model 140A is composed of the RF cable 144, the impedance matching circuit 134, and a portion (including the channel) of the RF transmission line 168. As another example, when the desired impedance to be reached is on the chuck 218 At the input end of the computer, the computer-generated model 140A is composed of an RF cable 144, an impedance matching circuit 134, and an RF transmission line 168.

The host controller 224 obtains parameters (eg, frequency, power, etc.) from the memory elements of the host controller 224 and provides the parameters to the local controller 212 of the RF generator 132. The local controller 212 receives the parameters and provides the parameters to an RF power supply 216, which generates an RF signal (e.g., a pulse signal, a non-pulse signal, etc.) with the parameters.

In some embodiments, the local controller 212 includes a lookup table that includes correspondences between the parameters and a plurality of parameters to be provided to the RF power supply 216. The local controller 212 consults the parameters (e.g. frequency, power, etc.) corresponding to the received parameters and provides the retrieved parameters to the RF power supply 216 instead of the parameters received from the host controller 224 .

The impedance matching circuit 134 receives the RF signal from the RF generator 132 and matches the impedance of the load connected to the impedance matching circuit 134 with the impedance of the source connected to the impedance matching circuit 134 to generate a modified RF signal. Examples of sources include RF generator 132, or RF cable 144, or a combination thereof. Examples of loads include RF transmission line 168, or plasma chamber 122, or a combination thereof.

The chuck 218 receives the modified RF signal from the impedance matching circuit 134 via the RF transmission line 168, and once the processing gas is introduced into the plasma chamber 122, the plasma is generated in the plasma chamber 122. Examples of the processing gas include an oxygen-containing gas, such as O ₂ . Other examples of the processing gas include a fluorine-containing gas, such as carbon tetrafluoride (CF ₄ ), sulfur hexafluoride (SF ₆ ), hexafluoroethane (C ₂ F ₆ ), and the like.

The plasma is used to process the work piece 120. For example, the plasma is used to etch the work piece 120, or to etch the material deposited on the work piece 120, or to deposit material on the work piece 120, or to clean the work piece 120, and so on.

When the supplied RF signal is processing the work piece 120, the host controller 224 is generated by transmitting the complex voltage and current measured by the sensor 214 to the output terminal 172 of the RF generator 132 through the computer-generated model 140A. The impedance of the output terminal 142A of the model 140A is generated at the computer. For example, the main The machine controller 224 calculates the directional sum of the complex voltage and current at the output terminal 172 of the RF generator 132 and the complex voltage and current of the complex circuit component of the computer-generated model 140A to generate the output of the computer-generated model 140A. The complex voltage and current at the terminal 142A, and the impedance at the output terminal 172 of the RF generator 132 is calculated from the complex voltage and current at the output terminal 142A.

In an embodiment using other variables at the output terminal 142A, the host controller 224 calculates other variables based on the complex voltage and current at the output terminal 142A.

When the impedance matching circuit 134 receives an RF signal from the RF generator 132, the host controller 224 determines whether the desired impedance at that point between the impedance matching circuit 134 and the chuck 218 is the same as the impedance at the output terminal 142A of the computer-generated model 140A. Match. Once it is determined that the desired impedance at this point does not match the impedance at the output terminal 142A, the host controller 224 adjusts the real part of the impedance at the output terminal 142A by changing the capacitance of the variable shunt capacitor 102. The host controller 224 changes the capacitance of the variable shunt capacitor 102 so that the real part of the impedance of the output terminal 142A matches the real part of the desired impedance at that point. The matching between the real part of the impedance at the output 142A and the real part of the desired impedance at that point on the RF transmission line 168 occurs to achieve an etch rate, or a deposition rate, or a gamma value, or a combination thereof . Gamma is explained below.

In addition, in some embodiments, once it is determined that the desired impedance at this point does not match the impedance at the output terminal 142A, the host controller 224 adjusts the imaginary part of the impedance at the output terminal 142A by changing the capacitance of the variable capacitor 104 . The host controller 224 changes the capacitance of the variable capacitor 104 to achieve a match between the imaginary part of the impedance at the output terminal 142A and the imaginary part of the desired impedance. The matching between the imaginary part of the impedance at the output 142A and the imaginary part of the desired impedance at that point on the RF transmission line 168 occurs to achieve an etch rate, or a deposition rate, or a combination thereof.

In various embodiments, the capacitance of the variable capacitor 104 is adjusted without adjusting the capacitance of the variable shunt capacitor 102, or adjusted together with the capacitance of the variable shunt capacitor 102 so that the impedance of the output terminal 142A of the model 140A is generated in the computer Match the desired impedance at this point.

In some embodiments, the point on the RF transmission line 168 includes a point on the output terminal of the impedance matching circuit connected to the RF transmission line 168 or a point on the input terminal of the chuck 218.

In some embodiments, a sensor (not shown) is connected to the point on the RF transmission line 168 and is used to measure the impedance at that point, instead of using the impedance at the output 142A of the computer-generated model 140A. A sensor (not shown) is connected to the host controller 224 to provide the measured impedance to the host controller 224. The host controller 224 determines whether the measured impedance matches the desired impedance to be reached at that point. Once it is determined that the measured impedance does not match the desired impedance at this point, the host controller 224 adjusts the real part of the impedance at the output terminal 142A by changing the capacitance of the variable shunt capacitor 102. The host controller 224 changes the capacitance of the variable shunt capacitor 102 so that the real part of the measured impedance matches the real part of the desired impedance. Matching between the real part of the measured impedance and the real part of the desired impedance at that point on the RF transmission line 168 occurs to achieve an etch rate, or a deposition rate, or a combination thereof.

Further, in several embodiments, once it is determined that the desired impedance at the point does not match the measured impedance, the host controller 224 adjusts the sensor connected to the point by changing the capacitance of the variable capacitor 104 (Not shown) The imaginary part of the measured impedance obtained. The host controller 224 changes the capacitance of the variable capacitor 104 to achieve a match between the imaginary part of the measured impedance received from the sensor (not shown) and the imaginary part of the desired impedance. Matching between the imaginary part of the measured impedance and the imaginary part of the desired impedance at that point on the RF transmission line 168 occurs to achieve an etch rate, or a deposition rate, or a combination thereof.

In various embodiments, the capacitance of the variable capacitor 104 is adjusted without adjusting the capacitance of the variable shunt capacitor 102, or adjusted together with the capacitance of the variable shunt capacitor 102 so as to be received from the sensor (not shown). The measured impedance matches the desired impedance.

I should note that in some embodiments, when the variable capacitor 104 is added to the impedance matching circuit 134, the variable shunt capacitor 102 and the inductor 106 are located in the impedance matching circuit 134. For example, before the variable capacitor 104 is included in the impedance matching circuit 134, the impedance matching circuit 134 borrows The variable shunt capacitor 102 and the inductor 106 are used to match the impedance of a load connected to one end of the impedance matching circuit 134 with the impedance of a source connected to the other end of the impedance matching circuit 134.

In various embodiments, the operations described herein as being performed by the host controller 224 are performed by one or more processors of the host controller 224.

In some embodiments, a variable inductor (not shown) is used in place of the variable shunt capacitor 102, and the inductance of the variable inductor is changed so that the real part of the impedance at the output of the model is generated by the computer The real part of the impedance reached at this point on the RF transmission line 168 matches the real part of the impedance measured by the sensor (not shown) at that point.

FIG. 2 is a diagram of an embodiment of a plasma system 150 that is used to control the rate of etching or deposition using a computer-generated model 140B and an impedance matching circuit 135. Examples of the computer-generated model 140B include a model of the RF cable 144 and the impedance matching circuit 135, or a model of the RF cable 144 and the impedance matching circuit 135 and at least a portion of the RF transmission line 168. The computer-generated model 140B is generated from the impedance-matching circuit 135 in a similar manner to the computer-generated model 140A (FIG. 1) from the impedance-matching circuit 134 (FIG. 1). In addition to the plasma system 150 including an impedance matching circuit 135 (the impedance matching circuit does not include a fixed inductor 106 (Figure 1) but a variable inductor 137), the plasma system 150 does not include a computer-generated model 140A but includes The computer-generated model 140B and the plasma system 150 do not include the recipe 226A (FIG. 1) but include the recipe 226B. The plasma system 150 and the plasma system 130 (FIG. 1) are similar.

The formula 226B of the host controller 224 also includes the impedance, such as the desired impedance, etc., which is to be reached at this point on the RF transmission line 168 between the output of the impedance matching circuit 135 and the chuck 218. Formula 226B includes a correspondence between the impedance at that point on the RF transmission line 168 and the impedance at the output 142B of the computer-generated model 140B.

In some embodiments, the formula 226B includes a correspondence between the value of another variable at the output terminal 142B and the value of the other variable at that point (this point is located in the impedance matching circuit 135 and above Between electrodes 220), rather than the correspondence between the impedance at that point on the RF transmission line 168 and the impedance at the output terminal 142B.

The variable inductor 137 is connected in series with the variable capacitor 104 and the RF transmission line 168.

In addition, in some embodiments, once it is determined that the desired impedance at this point does not match the impedance at the output terminal 142B of the computer-generated model 140B, the host controller 224 adjusts the output at the output by changing the inductance of the variable inductor 137. The imaginary part of the impedance of terminal 142B. The host controller 224 changes the inductance of the variable inductor 137 to achieve a match between the imaginary part of the impedance at the output terminal 142B and the imaginary part of the desired impedance at that point.

In various embodiments, the inductance of the variable inductor 137 is adjusted without adjusting the capacitance of the variable shunt capacitor 102, or adjusted together with the capacitance of the variable shunt capacitor 102 so that the output terminal 142B of the model 140B is generated in the computer The impedance of is matched to the desired impedance.

In several embodiments, once it is determined that the desired impedance at this point does not match the impedance at the output terminal 142B, the host controller 224 adjusts by changing the inductance of the variable inductor 137 and the capacitance of the variable capacitor 104 The imaginary part of the impedance at the output terminal 142B. The host controller 224 changes the inductance of the variable inductor 137 and the capacitance of the variable capacitor 104 to match the imaginary part of the impedance at the output terminal 142B and the imaginary part of the desired impedance at that point on the RF transmission line 168 .

In various embodiments, the inductance of the variable inductor 137 and the capacitance of the variable capacitor 104 are adjusted without adjusting the capacitance of the variable shunt capacitor 102 or adjusted together with the capacitance of the variable shunt capacitor 102 so that The impedance of the output 142B of the resulting model 140B matches the desired impedance at that point on the RF transmission line 168.

In some embodiments, a sensor (not shown) is connected to the point on the RF transmission line 168 and is used to measure the impedance at that point on the RF transmission line 168 instead of using the output terminal 142B of the computer-generated model 140B The impedance. A sensor (not shown) provides the measured impedance to the host controller 224. The host controller 224 determines whether the measured impedance matches the expected impedance to be reached at that point Match. Once it is determined that the measured impedance does not match the desired impedance at that point, the host controller 224 adjusts the imaginary part of the impedance at the output terminal 142B by changing the inductance of the variable inductor 137. The host controller 224 changes the inductance of the variable inductor 137 so that the imaginary part of the measured impedance received from the sensor (not shown) matches the imaginary part of the desired impedance.

In various embodiments, the inductance of the variable inductor 137 is adjusted without adjusting the capacitance of the variable shunt capacitor 102, or adjusted together with the capacitance of the variable shunt capacitor 102 so that the voltage from the sensor (not shown) is adjusted. The received measured impedance matches the desired impedance.

In some embodiments, once it is determined that the measured impedance received from the sensor (not shown) does not match the desired impedance at that point, the host controller 224 changes the inductance of the variable inductor 137, And the capacitance of the variable capacitor 104 to adjust the imaginary part of the impedance at the output terminal 142B. The host controller 224 changes the inductance of the variable inductor 137 and the capacitance of the variable capacitor 104 such that the imaginary part of the measured impedance received from the sensor (not shown) and the imaginary part of the impedance on the RF transmission line 168 The imaginary part of the impedance is expected to match.

In various embodiments, the inductance of the variable inductor 137 and the capacitance of the variable capacitor 104 are adjusted without adjusting the capacitance of the variable shunt capacitor 102 or adjusted together with the capacitance of the variable shunt capacitor 102 such that The measured impedance received by the sensor (not shown) matches the desired impedance at that point on the RF transmission line 168.

I should note that in some embodiments, when the variable capacitor 104 is added to the impedance matching circuit 135, the variable shunt capacitor 102 and the variable inductor 137 are located in the impedance matching circuit 135. For example, before the variable capacitor 104 is included in the impedance matching circuit 135, the impedance matching circuit 135 uses the variable shunt capacitor 102 and the variable inductor 137 to make the impedance of the load connected to one end of the impedance matching circuit 135 and The impedance of the source connected to the other end of the impedance matching circuit 135 matches.

FIG. 3 is a diagram of an embodiment of a plasma system 250, which is used to control the rate of etching or deposition using a computer-generated model 140C and an impedance matching circuit 152. Computer Generated Model 140C Examples include a model of the RF cable 144 and the impedance matching circuit 152, or a model of the RF cable 144 and the impedance matching circuit 152 and at least a portion of the RF transmission line 168. The computer-generated model 140C is generated from the impedance-matching circuit 152 in a similar manner to the computer-generated model 140A (FIG. 1) from the impedance-matching circuit 134 (FIG. 1). Except that the impedance matching circuit 152 includes a capacitor 158 instead of the variable capacitor 104, a variable shunt capacitor 162, and an inductor 164, the plasma system 250 is similar to the plasma system 130 (FIG. 1). The capacitor 158 is connected in series with the inductor 106 and is connected to the RF cable 144. The inductor 164 is connected to the inductor 106 and the RF transmission line 168 in a T-shaped configuration. The variable capacitor 162 is connected in series with the inductor 164.

Except that plasma system 250 includes computer-generated model 140C instead of computer-generated model 140A, and plasma system 250 includes formula 226C instead of formula 226A (Figure 1), plasma system 250 and plasma system 130 (Figure 1) are similar.

The formula 226C of the host controller 224 also includes the impedance, such as the desired impedance, etc., which is desired to be reached on the RF transmission line 168 between the output terminal of the impedance matching circuit 152 and the chuck 218. Formula 226C includes a correspondence between the impedance at that point on the RF transmission line 168 and the impedance at the output 142C of the computer-generated model 140C.

In some embodiments, the formula 226C includes a correspondence between the value of another variable at the output terminal 142C and the value of the other variable at that point (this point is between the impedance matching circuit 152 and the upper electrode 220 ), Not the correspondence between the impedance at that point and the impedance at the output 142C.

In some embodiments, once it is determined that the desired impedance at this point does not match the impedance of the output terminal 142C of the computer-generated model 140C, the host controller 224 adjusts the output terminal 142C by changing the capacitance of the variable shunt capacitor 162. The imaginary part of the impedance. The host controller 224 changes the capacitance of the variable shunt capacitor 162 to achieve a match between the imaginary part of the impedance at the output terminal 142C and the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, the capacitance of the variable shunt capacitor 162 is adjusted without adjusting the capacitance of the variable shunt capacitor 102, or adjusted together with the capacitance of the variable shunt capacitor 102 so that the output terminal 142C of the model 140C is generated in the computer. The impedance matches the desired impedance at that point on the RF transmission line 168.

In several embodiments, a variable capacitor (not shown) is used in place of the capacitor 158. Adjust the capacitance of the variable capacitor (not shown) and the capacitance of the variable shunt capacitor 162 so that the imaginary part of the impedance at the output terminal 142C of the model 140C is generated by the computer and the desired impedance at that point on the RF transmission line 168 The imaginary parts match.

In various embodiments, a variable capacitor (not shown) is used in place of the capacitor 158. In addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of the variable capacitor (not shown) and the capacitance of the variable shunt capacitor 162 are adjusted so that the impedance of the output terminal 142C of the model 140C in the computer and the impedance at RF The desired impedance at this point on the transmission line 168 matches.

In some embodiments, a variable inductor (not shown) is used in place of the inductor 106. Adjust the inductance of the variable inductor (not shown) and the capacitance of the variable shunt capacitor 162 so that the imaginary part of the impedance at the output terminal 142C of the model 140C is generated by the computer and the desired impedance at that point on the RF transmission line 168 The imaginary parts match.

In some embodiments, a variable inductor (not shown) is used in place of the inductor 106. In addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of the variable inductor (not shown) and the capacitance of the variable shunt capacitor 162 are adjusted so that the impedance of the output terminal 142C of the model 140C and the The desired impedance at this point on the RF transmission line 168 matches.

In some embodiments, a variable capacitor (not shown) is used in place of capacitor 158, and a variable inductor (not shown) is used in place of inductor 106. Adjust the capacitance of the variable capacitor (not shown), the inductance of the variable inductor (not shown), and the capacitance of the variable shunt capacitor 162 so that the imaginary part of the impedance of the output terminal 142C of the model 140C and the The imaginary part of the desired impedance matches.

In some embodiments, a sensor (not shown) is connected to the point on the RF transmission line 168 and used to measure the impedance at that point instead of using the impedance at the output 142C of the computer-generated model 140C. A sensor (not shown) provides the measured impedance to the host controller 224. The host controller 224 determines whether the measured impedance matches the desired impedance to be reached at that point on the RF transmission line 168. Once it is determined that the measured impedance does not match the desired impedance at this point, the host controller 224 adjusts the imaginary part of the impedance at the output terminal 142C by changing the capacitance of the variable shunt capacitor 162. The host controller 224 changes the capacitance of the variable shunt capacitor 162 to match the imaginary part of the measured impedance received from the sensor (not shown) with the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of the variable shunt capacitor 162 is adjusted so that the measured impedance received from the sensor (not shown) and the RF The desired impedance at this point on the transmission line 168 matches.

In the embodiment where a variable capacitor (not shown) is used instead of the capacitor 158, once it is determined that the measured impedance does not match the expected impedance at that point, the host controller 224 changes the value of the variable capacitor (not shown) by The capacitance and the capacitance of the variable shunt capacitor 162 adjust the imaginary part of the impedance at the output terminal 142C. The host controller 224 changes the capacitance of the variable capacitor (not shown) and the capacitance of the variable shunt capacitor 162 so that the imaginary part of the measured impedance received from the sensor (not shown) is the same as that on the RF transmission line 168 The imaginary part of the point's desired impedance matches.

In several embodiments, the capacitance of a variable capacitor (not shown) connected in place of the capacitor 158 and the capacitance of the variable shunt capacitor 162 are adjusted so that the measurement received from the sensor (not shown) The imaginary part of the impedance matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In several embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of a variable capacitor (not shown) connected instead of the capacitor 158 and the capacitance of the variable shunt capacitor 162 are adjusted so that The measured impedance received from a sensor (not shown) matches the desired impedance at that point on the RF transmission line 168.

In an embodiment using a variable inductor (not shown) instead of the inductor 106, once it is determined that the measured impedance does not match the desired impedance at that point, the host controller 224 changes the variable inductor by The inductance (not shown) and the capacitance of the variable shunt capacitor 162 adjust the imaginary part of the impedance at the output terminal 142C. The host controller 224 changes the inductance of the variable inductor (not shown) and the capacitance of the variable shunt capacitor 162 so that the imaginary part of the measured impedance received from the sensor (not shown) and the RF transmission line 168 The imaginary part of the desired impedance at this point matches.

In several embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of a variable inductor (not shown) connected in place of the inductor 106 and the capacitance of the variable shunt capacitor 162 are additionally performed. Adjust so that the measured impedance received from the sensor (not shown) matches the desired impedance at that point on the RF transmission line 168.

In some embodiments, a variable inductor (not shown) is used in place of the inductor 106 and a variable capacitor (not shown) is used in place of the capacitor 158. Once it is determined that the measured impedance does not match the desired impedance at that point, the host controller 224 changes the inductance of the variable inductor (not shown), the capacitance of the variable capacitor (not shown), and the variable The capacitance of the shunt capacitor 162 adjusts the imaginary part of the impedance at the output terminal 142C. The host controller 224 changes the inductance of the variable inductor (not shown), the capacitance of the variable capacitor (not shown), and the capacitance of the variable shunt capacitor 162 so that it receives from the sensor (not shown) The imaginary part of the measured impedance matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In several embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of a variable inductor (not shown) connected instead of the inductor 106 and a variable connected instead of the capacitor 158 The capacitance of the capacitor (not shown) and the capacitance of the variable shunt capacitor 162 are adjusted so that the imaginary part of the measured impedance received from the sensor (not shown) and the desired impedance at that point on the RF transmission line 168 The imaginary parts match.

I should note that in some embodiments, when inductor 164 and variable shunt capacitor 162 are added to impedance matching circuit 152, variable shunt capacitor 102, capacitor 158, and inductor 106 is located in the impedance matching circuit 152. For example, before the inductor 164 and the variable shunt capacitor 162 are included in the impedance matching circuit 152, the impedance matching circuit 152 connects to the impedance matching circuit 152 by using the variable shunt capacitor 102, the capacitor 158, and the inductor 106. The impedance of the load at one end matches the impedance of a source connected to the other end of the impedance matching circuit 152.

FIG. 4 is a diagram of an embodiment of a plasma system 252 that uses a computer-generated model 140D and an impedance matching circuit 254 to control the rate of etching or deposition. Examples of the computer-generated model 140D include a model of the RF cable 144 and the impedance matching circuit 254, or a model of the RF cable 144 and the impedance matching circuit 254 and at least a portion of the RF transmission line 168. The computer generated model 140D is generated from the impedance matching circuit 254 in a manner similar to the computer generated model 140C (FIG. 3) generated from the impedance matching circuit 152 (FIG. 3). The plasma system 252 is similar to the plasma system 250 (FIG. 3) except that the impedance matching circuit 254 includes a variable inductor 256 instead of the inductor 164. The variable inductor 256 is connected in series with the variable capacitor 162 and forms a T-shaped configuration with the inductor 106 and the RF transmission line 168.

The plasma system 252 is similar to the plasma system 250 except that the plasma system 252 includes a computer-generated model 140D instead of the computer-generated model 140C, and the plasma system 252 includes a recipe 226D instead of a recipe 226C (FIG. 3).

The recipe 226D of the host controller 224 includes the impedance, such as the desired impedance, etc., which is desired to be reached on the RF transmission line 168 between the output terminal of the impedance matching circuit 254 and the chuck 218. Formula 226D includes a correspondence between the impedance at that point on the RF transmission line 168 and the impedance at the output 142D of the computer-generated model 140D.

In some embodiments, the formula 226D includes a correspondence between the value of another variable at the output terminal 142D and the value of the other variable at that point (this point is between the impedance matching circuit 254 and the upper electrode 220 ) Instead of the correspondence between the impedance at that point on the RF transmission line 168 and the impedance at the output terminal 142D.

In some embodiments, once it is determined that the desired impedance at this point does not match the impedance at the output terminal 142D of the computer-generated model 140D, the host controller 224 adjusts the output terminal 142D by changing the inductance of the variable inductor 256 The imaginary part of the impedance. The host controller 224 changes the inductance of the variable inductor 256 to achieve a match between the imaginary part of the impedance at the output terminal 142D and the imaginary part of the desired impedance at that point on the RF transmission line 168.

In several embodiments, once it is determined that the expected impedance at this point does not match the impedance of the output terminal 142D of the computer-generated model 140D, the host controller 224 changes the inductance of the variable inductor 256 and the variable shunt. The capacitance of the capacitor 162 adjusts the imaginary part of the impedance at the output terminal 142D. The host controller 224 changes the inductance of the variable inductor 256 and the capacitance of the variable shunt capacitor 162 to achieve the imaginary part of the impedance at the output terminal 142D and the imaginary part of the desired impedance at that point on the RF transmission line 168 Match.

In various embodiments, the inductance of the variable inductor 256 is adjusted without adjusting the capacitance of the variable shunt capacitor 102 or adjusted together with the capacitance of the variable shunt capacitor 102 so that the output terminal 142D of the model 140D is generated in the computer. The impedance of is matched to the desired impedance at that point on the RF transmission line 168.

In several embodiments, once it is determined that the desired impedance at this point does not match the impedance at the output 142D, the host controller 224 changes the inductance of the variable inductor 256, the capacitance of the variable shunt capacitor 162, and The capacitance of the variable shunt capacitor 102 is adjusted to the imaginary part of the impedance at the output terminal 142D. The host controller 224 changes the capacitance of the variable shunt capacitor 162, the inductance of the variable inductor 256, and the capacitance of the variable shunt capacitor 102 to achieve the imaginary part of the impedance at the output terminal 142D and the same on the RF transmission line 168. Match between the imaginary part of the desired impedance of a point.

In various embodiments, a variable capacitor (not shown) is used in place of the capacitor 158. Adjust the capacitance of the variable capacitor (not shown) and the inductance of the variable inductor 256 so that the imaginary part of the impedance of the output terminal 142D of the model 140D and the desired impedance of the point on the RF transmission line 168 are generated by the computer. Department matches.

In some embodiments, a variable capacitor (not shown) is used in place of the capacitor 158. In addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of the variable capacitor (not shown) and the inductance of the variable inductor 256 are adjusted so that the impedance of the output terminal 142D of the model 140D and the The desired impedance at this point on the RF transmission line 168 matches.

In several embodiments, a variable inductor (not shown) is used in place of the inductor 106. Adjust the inductance of the variable inductor (not shown) and the inductance of the variable inductor 256 so that the imaginary part of the impedance of the output terminal 142D of the model 140D is generated by the computer and the desired impedance at that point on the RF transmission line 168 Matches the imaginary part.

In some embodiments, a variable inductor (not shown) is used in place of the inductor 106. In addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of the variable inductor (not shown) and the inductance of the variable inductor 256 are adjusted so that the impedance of the output terminal 142D of the model 140D is generated in the computer. Matches the desired impedance at this point on the RF transmission line 168.

In some embodiments, a variable capacitor (not shown) is used in place of capacitor 158 and a variable inductor (not shown) is used in place of inductor 106. Adjust the capacitance of the variable capacitor (not shown), the inductance of the variable inductor (not shown), and the inductance of the variable inductor 256 so that the imaginary part of the impedance of the output terminal 142D of the model 140D is generated in the computer. Matches the imaginary part of the desired impedance at this point on the RF transmission line 168.

In some embodiments, a variable capacitor (not shown) is used in place of capacitor 158 and a variable inductor (not shown) is used in place of inductor 106. In addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of the variable capacitor (not shown), the inductance of the variable inductor (not shown), and the inductance of the variable inductor 256 are adjusted to The impedance at the output 142D of the computer-generated model 140D is matched to the desired impedance at that point on the RF transmission line 168.

In various embodiments, a variable capacitor (not shown) is used in place of the capacitor 158. In addition to adjusting the capacitance of the variable shunt capacitor 102, the power of the variable capacitor (not shown) is additionally adjusted. The capacitance, the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256 are adjusted so that the impedance at the output 142D of the computer-generated model 140D matches the desired impedance at that point on the RF transmission line 168.

In some embodiments, a variable capacitor (not shown) is used in place of capacitor 158 and a variable inductor (not shown) is used in place of inductor 106. Adjust the capacitance of the variable capacitor (not shown), the inductance of the variable inductor (not shown), the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256 so that the model 140D The imaginary part of the impedance at the output 142D matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In some embodiments, a variable capacitor (not shown) is used in place of capacitor 158 and a variable inductor (not shown) is used in place of inductor 106. In addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of the variable capacitor (not shown), the inductance of the variable inductor (not shown), the capacitance of the variable shunt capacitor 162, and the variable current are additionally adjusted. The inductance of the inductor 256 is adjusted so that the impedance at the output 142D of the computer-generated model 140D matches the desired impedance at that point on the RF transmission line 168.

In some embodiments, a sensor (not shown) is connected to the point on the RF transmission line 168 and used to measure the impedance at that point instead of using the impedance at the output 142D of the computer-generated model 140D. A sensor (not shown) provides the measured impedance to the host controller 224. The host controller 224 determines whether the measured impedance matches the desired impedance to be reached at that point on the RF transmission line 168. Once it is determined that the measured impedance does not match the desired impedance at this point, the host controller 224 adjusts the imaginary part of the impedance at the output terminal 142D by changing the inductance of the variable inductor 256. The host controller 224 changes the inductance of the variable inductor 256 so that the imaginary part of the measured impedance matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, the inductance of the variable inductor 256 is adjusted without adjusting the capacitance of the variable shunt capacitor 102, or adjusted together with the capacitance of the variable shunt capacitor 102 to enable measurements received from the sensor. The impedance of is matched to the desired impedance at that point on the RF transmission line 168.

In the embodiment where a variable capacitor (not shown) is used instead of the capacitor 158, once it is determined that the measured impedance does not match the expected impedance at that point, the host controller 224 changes the value of the variable capacitor (not shown) by The capacitance and the inductance of the variable inductor 256 adjust the imaginary part of the impedance at the output terminal 142D. The host controller 224 changes the capacitance of the variable capacitor (not shown) and the inductance of the variable inductor 256 so that the imaginary part of the measured impedance received from the sensor (not shown) and the RF transmission line 168 The imaginary part of the desired impedance at this point matches.

In several embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of a variable capacitor (not shown) connected instead of the capacitor 158 and the inductance of the variable inductor 256 are adjusted to The measured impedance received from the sensor (not shown) is matched to the desired impedance at that point on the RF transmission line 168.

In an embodiment using a variable inductor (not shown) instead of the inductor 106, once it is determined that the measured impedance does not match the desired impedance at that point, the host controller 224 changes the variable inductor by The inductance (not shown) and the inductance of the variable inductor 256 adjust the imaginary part of the impedance at the output terminal 142D. The host controller 224 changes the inductance of the variable inductor (not shown) and the inductance of the variable inductor 256 so that the imaginary part of the measured impedance received from the sensor (not shown) and the RF transmission line The imaginary part of the desired impedance at 168 matches this point.

In various embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of a variable inductor (not shown) connected instead of the inductor 106 and the inductance of the variable inductor 256 The inductance is adjusted so that the measured impedance received from a sensor (not shown) matches the desired impedance at that point on the RF transmission line 168.

In some embodiments, a variable inductor (not shown) is used in place of the inductor 106 and a variable capacitor (not shown) is used in place of the capacitor 158. Once it is determined that the measured impedance does not match the desired impedance at that point, the host controller 224 changes the inductance of the variable inductor (not shown), the capacitance of the variable capacitor (not shown), and the variable The inductance of the inductor 256 adjusts the impedance at the output 142D Imaginary part. The host controller 224 changes the inductance of the variable inductor (not shown), the capacitance of the variable capacitor (not shown), and the inductance of the variable inductor 256 so as to be received from the sensor (not shown). The imaginary part of the measured impedance matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of a variable inductor (not shown) connected instead of the inductor 106, The capacitance of the variable capacitor (not shown) and the inductance of the variable inductor 256 are adjusted so that the measured impedance received from the sensor (not shown) matches the desired impedance.

In the embodiment where a variable capacitor (not shown) is used instead of the capacitor 158, once it is determined that the measured impedance does not match the expected impedance at that point, the host controller 224 changes the value of the variable capacitor (not shown) by The capacitance, the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256 adjust the imaginary part of the impedance at the output terminal 142D. The host controller 224 changes the capacitance of the variable capacitor (not shown), the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256 to make the measured impedance received from the sensor (not shown) The imaginary part of is matched with the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the capacitance of a variable capacitor (not shown) connected to the capacitor 158, the capacitance of the variable shunt capacitor 162, and the variable current are additionally adjusted. The inductance of the sensor 256 is adjusted so that the measured impedance received from the sensor (not shown) matches the desired impedance at that point on the RF transmission line 168.

In some embodiments that use a variable inductor (not shown) instead of the inductor 106, once it is determined that the measured impedance received from the sensor (not shown) and the measured impedance at that point on the RF transmission line 168 Expected impedance mismatch, the host controller 224 adjusts the impedance at the output terminal 142D by changing the inductance of the variable inductor (not shown), the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256. Imaginary part. The host controller 224 changes the inductance of the variable inductor (not shown) and the variable shunt capacitor 162 And the inductance of the variable inductor 256 such that the imaginary part of the measured impedance received from the sensor (not shown) matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of a variable inductor (not shown) connected instead of the inductor 106, the capacitance of the variable shunt capacitor 162, and The inductance of the variable inductor 256 is adjusted to match the measured impedance received from a sensor (not shown) to the desired impedance.

In some embodiments, a variable inductor (not shown) is used in place of the inductor 106 and a variable capacitor (not shown) is used in place of the capacitor 158. Once it is determined that the measured impedance does not match the desired impedance at that point, the host controller 224 changes the inductance of the variable inductor (not shown), the capacitance of the variable capacitor (not shown), and the variable shunt by changing The capacitance of the capacitor 162 and the inductance of the variable inductor 256 adjust the imaginary part of the impedance at the output terminal 142D. The host controller 224 changes the inductance of the variable inductor (not shown), the capacitance of the variable capacitor (not shown), the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256 so that the inductance The imaginary part of the measured impedance received by the tester (not shown) matches the imaginary part of the desired impedance at that point on the RF transmission line 168.

In various embodiments, in addition to adjusting the capacitance of the variable shunt capacitor 102, the inductance of a variable inductor (not shown) connected instead of the inductor 106, The capacitance of the variable capacitor (not shown), the capacitance of the variable shunt capacitor 162, and the inductance of the variable inductor 256 are adjusted so that the measured impedance received from the sensor (not shown) is on the RF transmission line 168 The desired impedance at this point matches.

I should note that in some embodiments, when the variable inductor 256 and the variable shunt capacitor 162 are added to the impedance matching circuit 254, the variable shunt capacitor 102, the capacitor 158, and the inductor 106 are located in the impedance matching circuit 254. For example, before the variable inductor 256 and the variable shunt capacitor 162 are included in the impedance matching circuit 254, the impedance matching circuit 254 uses a variable shunt current The container 102, capacitor 158, and inductor 106 match the impedance of a load connected to one end of the impedance matching circuit 254 to the impedance of a source connected to the other end of the impedance matching circuit 254.

I should also note that in various embodiments, the capacitance of the variable capacitor 102 is controlled to change the real part of the impedance at that point, and the real part is not subject to the RF signal passing through that point on the RF transmission line 168 The effect of frequency. In some embodiments, the capacitance of the variable capacitor 104, or the inductance of the variable inductor 137 (FIG. 2), or the capacitance of the variable shunt capacitor 162 (FIG. 3), or the inductance of the variable inductor 256 is changed. , Or a combination thereof to change the imaginary part of the impedance at that point, and the imaginary part is a function of the harmonic frequency at that point.

In some embodiments, the host controller 224 sends a signal to the local controller 212 to change (e.g., adjust, etc.) a harmonic frequency (e.g., third-order harmonic frequency, fourth-order harmonic) associated with the operation of the RF power supply 216. (Harmonic frequency, fifth-order harmonic frequency, m-order harmonic frequency, etc., where m is an integer greater than 1) without changing the capacitance of the variable capacitor 104 and / or the inductance of the variable inductor 137 and / or The inductance of the variable inductor 256 and / or the capacitance of the variable capacitor 162, or the capacitance of the variable capacitor 104 and / or the inductance of the variable inductor 137 and / or the inductance of the variable inductor 256 and The capacitance of the variable capacitor 162 is performed together. The harmonic frequency is changed to achieve a match between an etching rate and a predetermined etching rate, wherein the etching rate is calculated based on the complex voltage and current at the output terminal 142D. For example, the host controller 224 sends a signal to the local controller 212 to adjust the operating frequency (eg, the basic frequency of operation, etc.) of the RF power supply 216. Based on the signal received from the host controller 224, the local controller 212 sends a frequency value to the RF power supply 216 so that the RF power supply 216 operates at the frequency value. Upon receiving the frequency value, the RF power supply 216 generates an RF signal having the frequency value. When an RF signal having the frequency value is supplied, a complex voltage and current are measured at the output terminal 172 of the RF generator 132, and a complex voltage is determined at the output terminal 142D of the computer-generated model 140D based on the measured complex voltage and current. And current. An etching rate is calculated based on the complex voltage and current determined at the output terminal 142D, and the etching rate is compared with a predetermined etching rate. Once it is judged that the calculated etching rate and the predetermined etching rate If the rates do not match, the host controller 224 sends another signal to the local controller 212 to adjust the operating frequency of the RF power supply 216.

FIG. 5 is a diagram of an example of a table used to explain the determination of the capacitance and inductance values of the impedance matching network. The determination is based on a computer-generated model (for example, computer-generated model 140A (Figure 1), computer The complex voltage and current determined by the output terminals of the model 140B (FIG. 2), the computer-generated model 140C (FIG. 3), the computer-generated model 140D (FIG. 4), etc. are generated. The table in FIG. 5 is stored in a memory element of the host controller 224 (FIG. 1). The complex voltage and current are determined at the output of the computer-generated model.

In addition, the host controller 224 (FIG. 1) identifies (e.g., reads, obtains, etc.) the etching rate at the output of the computer-generated model based on the complex voltage and current at the output of the computer-generated model. For example, the host controller 224 recognizes an etching rate ERC1 as corresponding to the complex voltage and current V & I1, identifies another etching rate ERC2 based on the complex voltage and current V & I2, and so on until the host controller 224 is based on the complex voltage and current V & In identifies an etch rate ERCn, where n is an integer greater than two. The complex voltage and current V & I1, V & I2, and V & In are the complex voltage and current at the output end of the computer-generated model.

In some embodiments, the etch rate calculated at the output of the computer-generated model is associated with a predetermined etch rate to be achieved at that point on the RF transmission line 168. For example, the host controller 224 includes between the calculated etching rate ERC1 and the predetermined etching rate ERP1, between the calculated etching rate ERC2 and the predetermined etching rate ERP2, and so on until the calculated etching rate ERCn and Correlation between predetermined etch rates ERPN. In some embodiments, the etch rates ERP1 to ERPn all have the same value. In various embodiments, ERP1 has a different value from one or more of the remaining predetermined etch rates ERP2 to ERPn.

In various embodiments, the predetermined etch rate ERP1 is within a predetermined range of the calculated etch rate ERC1, and the predetermined etch rate ERP2 is within a predetermined range of the calculated etch rate ERC2. Within a predetermined range, and so on until the predetermined etching rate ERPn is within a predetermined range of the calculated etching rate ERCn.

In several embodiments, the host controller 224 identifies a predetermined etch rate based on the calculated etch rate. For example, the host controller 224 determines that the etching rate ERP1 is associated with the etching rate ERC1, the etching rate ERP2 is associated with the etching rate ERC2, and so on until the host controller 224 determines that the etching rate ERPn is associated with the etching rate ERCn.

Each predetermined impedance ZP to be achieved at this point corresponds to a predetermined etching rate. For example, the host controller 224 calculates a predetermined impedance ZP1 from the predetermined etching rate ERP1. As another example, the host controller 224 calculates a predetermined impedance ZP2 from the predetermined etching rate ERP2, and so on until the host controller 224 calculates a predetermined impedance ZPn from the predetermined etching rate ERPn. As yet another example, the host controller 224 resolves the voltage and current at different times based on the relationship between the voltage, current, and predetermined etch rate at different times. To further explain, the host controller 224 solves the equations C ₁₁ VP1 + C ₁₂ IP1 = ERP1, and C ₁₁ VP2 + C ₁₂ IP2 = VP1, VP2, IP1, and IP2 in ERP2 to calculate the voltages VP1 and VP2, and the current IP1. And IP2. The host controller 224 determines a predetermined complex impedance based on the ratio of the voltage VP1 to the current IP1 and the ratio of the voltage VP2 to the current IP2.

In some embodiments, the host controller 224 identifies a predetermined impedance ZP based on the predetermined etch rate ERP. For example, the host controller 224 determines the predetermined impedance ZP1 based on the correspondence between the impedance ZP1 and the etching rate ERP1, and determines the predetermined impedance ZP2 based on the correspondence between the impedance ZP2 and the etching rate ERP2, and so on until the host The controller 224 determines a predetermined impedance ZPn based on a correspondence relationship between the impedance ZPn and the etching rate ERPn.

Each predetermined impedance has a real part and an imaginary part. For example, the host controller 224 divides the predetermined impedance ZP1 into a real part ZPR1 and an imaginary part ZPI1, divides the predetermined impedance ZP2 into a real part ZPR2 and an imaginary part ZPI2, and so on until the host controller 224 divides the predetermined impedance ZPn is divided into a real part ZPRn and an imaginary part ZPIn.

In some embodiments, the host controller 224 correlates a real part of a predetermined impedance with a capacitance value of the capacitor 102 (FIGS. 1-4) or an inductance value of a variable inductor to replace the variable capacitor 102 Link (such as linking, establishing a connection relationship, establishing a corresponding relationship, etc.). For example, the real part ZPR1 is associated with the capacitance value C1021, the real part ZPR2 is associated with the capacitance value C1022, and so on until the real part ZPRn is associated with the capacitance value C102n. The host controller 224 further sets the imaginary part of the predetermined impedance and the capacitance value of the capacitor 104 (FIGS. 1 and 2), or the capacitance value of the capacitor 162 (FIGS. 3 and 4), or the inductance value of the inductor 137 (FIG. 2), Or the inductance of the variable inductor 256 (Figure 4), or the inductance of a variable inductor (not shown) to replace the inductor 106 (Figures 3, 4), or the capacitor 158 (Figure The capacitance value of the variable capacitor of 3, 4), or a combination thereof. For example, the imaginary part ZPI1 is the capacitance value C1041 of the capacitor 104 or the inductance value L1371 of the inductor 137 or the capacitance value C1621 of the capacitor C162 or the inductance value L2561 of the inductor L256 or the replacement of the inductor 106 The value of the inductance of a variable inductor (not shown) may be associated with the capacitance of the variable capacitor used to replace the capacitor 158, or a combination thereof. As another example, the imaginary part ZPI2 is the capacitance value C1042 of the capacitor 104, or the inductance value L1372 of the inductor 137, or the capacitance value C1622 of the capacitor C162, or the inductance value L2562 of the inductor L256, or the The inductance value of the variable inductor (not shown) replacing the inductor 106 is associated with the capacitance value of the variable capacitor replacing the capacitor 158, or a combination thereof. As another example, the imaginary part ZPIn is the capacitance value C104n of the capacitor 104, or the inductance value L137n of the inductor 137, or the capacitance value C162n of the capacitor C162, or the inductance value L256n of the inductor L256, or the The inductance value of the variable inductor (not shown) replacing the inductor 106 is associated with the capacitance value of the variable capacitor replacing the capacitor 158, or a combination thereof.

The host controller 224 recognizes the capacitance value of the capacitor 102 based on the real part ZPR. For example, the host controller 224 determines that there is a corresponding relationship between the real part ZPR1 and the capacitance value C1021, and identifies the capacitance value C1021 based on the real part ZPR1. As another example, the host controller 224 determines that there is a correspondence between the real part ZPR2 and the capacitance value C1022, and recognizes the capacitance value C1022, and so on until the host The controller 224 determines that there is a corresponding relationship between the real part ZPRn and the capacitance value C102n and recognizes the capacitance value C102n.

Similarly, the host controller 224 determines the capacitance value of the capacitor 104 or the inductance value of the inductor 137 or the capacitance value of the capacitor 162 or the inductance value of the inductor 256 based on the imaginary part ZPI. An inductance value of a variable inductor (not shown), or a capacitance value of a variable capacitor to replace the capacitor 158, or a combination thereof. For example, the host controller 224 determines the inductance of the variable inductor (not shown) to replace the inductor 106 in the imaginary part ZPI1 and the capacitance value C1041, or the inductance value L1371, or the capacitance value 1621, or the inductance value 2561. Value, or the capacitance value of the variable capacitor to replace the capacitor 158, or a combination thereof, and the capacitance value C1041, the inductance value L1371, or the capacitance value 1621, or the inductance is identified based on the imaginary part ZPI1. The value 2561 or the inductance value of a variable inductor (not shown) to replace the inductor 106, or the capacitance value of a variable capacitor to replace the capacitor 158, or a combination thereof. As another example, the host controller 224 determines that the imaginary part ZPIn and the capacitance value C104n, or the inductance value L137n, or the capacitance value 162n, or the inductance value 256n, or a variable inductor to replace the inductor 106 (not shown) ), Or the capacitance value of the variable capacitor to replace the capacitor 158, or a combination thereof, and based on the imaginary part ZPIn, the capacitance value C104n, or the inductance value L137n, or the capacitance value 162n is identified. Or an inductance value of 256n, or an inductance value of a variable inductor (not shown) to replace the inductor 106, or a capacitance value of a variable capacitor to replace the capacitor 158, or a combination thereof.

I should note that in some embodiments, the host controller 224 uses a deposition rate or a gamma value instead of an etch rate. For example, the host controller 224 calculates and / or determines a gamma value based on a ratio of the reflected power to the supplied power, where the reflected power is reflected by the plasma in the plasma chamber 122 to the RF generator 132, and The supplied power is supplied by the RF signal generated by the RF generator 132. The host controller 224 uses the complex voltage and current at the output of the computer-generated model to calculate and / or identify the supplied power and reflected power at the output. Based on the supplied power and reflected power, the host controller 224 calculates and / or identifies the gamma value at the output of the computer-generated model. Host controller 224 The gamma value is compared with a predetermined gamma value stored in a memory element of the host controller 224 to determine whether the calculated gamma value matches the predetermined gamma value. As an example, the predetermined gamma value is zero or within a range of zero. The predetermined gamma value is a gamma value to be achieved at that point on the RF transmission line 168. Once it is determined that the calculated gamma value does not match the predetermined gamma value, the host controller 224 calculates and / or identifies an impedance based on the predetermined gamma value. The capacitance of the variable shunt capacitor 102 is changed to achieve the real part of the impedance. In addition, the capacitance of the variable shunt capacitor 102 is not changed or the capacitance of the variable capacitor 104 and / or the inductance of the variable inductor 137 and / or the variable capacitor is changed in addition to the capacitance of the variable shunt capacitor 102. Capacitance of 162 and / or inductance of variable inductor 256 and / or inductance value of variable inductor (not shown) to replace inductor 106 and / or variable value of capacitor 158 to replace The capacitance of the capacitor to achieve the imaginary part of the impedance.

FIG. 6 is a block diagram of an embodiment of a control system 280 for controlling a circuit component 284. The control system 280 includes a driver 138, a motor 282, and a circuit assembly 284. Examples of circuit components 284 include inductors and capacitors. Examples of capacitors include variable capacitors. Examples of variable capacitors include vacuum variable capacitors (VVC) and air variable capacitors. In some embodiments, the motor 282 is integrated into the circuit assembly 284. An example of the driver 138 includes a circuit that generates a current. An example of a circuit that generates a current when a critical voltage is applied includes a circuit including some transistors.

When the host controller 224 sends a signal to the driver 138 to control the circuit assembly 284, the driver 138 generates a current that rotates the rotor of the motor 282 relative to the stator of the motor 282. This rotation causes rotation of a coupler 286 (eg, a rod, screw, screw, sleeve, plunger, etc.) between the motor 282 and the circuit assembly 284. The rotation of the connector 286 causes a change in the distance between the plates of the capacitor, or an extension or contraction of the inductor. A change in the distance between the plates of a capacitor changes the capacitance of the capacitor. In addition, the extension or contraction of the inductor changes the inductance of the inductor.

In various embodiments, the driver 138 is connected to the circuit assembly 284 and not to the motor 282. For example, a reverse-biased semiconductor diode has an empty layer thickness that changes as a direct current (DC) voltage is applied across the diode.

FIG. 7 is a diagram of an embodiment of the host controller 224. The host controller 224 includes a processor 204, a memory element 202, an input device 290, an output device 292, an input / output (I / O) interface 294, an I / O interface 296, a network interface controller (NIC) 298, and Bus 302. The processor 204, the memory element 202, the input device 290, the output device 292, the I / O interface 294, the I / O interface 296, and the NIC 298 are connected to each other via a bus 302. Examples of the input device 290 include a mouse, a keyboard, a stylus, and the like. Examples of the output device 292 include a display, a speaker, or a combination thereof. The display may be a liquid crystal display, a light emitting diode display, a cathode ray tube, a plasma display, and the like. Examples of the NIC 298 include a network interface card, a network adapter, and the like.

Examples of I / O interfaces include interfaces that provide compatibility between multiple hardware connected to the interface. For example, the I / O interface 294 converts signals received from the input device 290 into a form, amplitude, and / or speed compatible with the bus 302. As another example, the I / O interface 296 converts signals received from the bus 302 into a form, amplitude, and / or speed compatible with the output device 292.

FIG. 8 is an example of a graph 306 that plots the impedance of a node at a computer-generated model versus the frequency of an RF signal at a point on the RF transmission line 168 (FIG. 1), where the point on the RF transmission line Corresponds to this node. As shown in graph 306, the impedance changes with the frequency of the RF generator 132 (FIG. 1) supplying the RF signal, and vice versa. The impedance has a minimum frequency near the harmonic frequency of the RF signal.

FIG. 9 is an example of a graph 310, which plots the etching rate (relative to the radius of the substrate) of the etched substrate for varying degrees of etch rate control. A computer-generated model is used to determine an etch rate, and the etch rate is compared to a predetermined etch rate to increase uniformity in the etch rate. In addition, FIG. 310 shows that there is non-uniformity in the etching rate when the model is not generated using a computer.

Also note that although the above operations are described with reference to a parallel plate plasma chamber, such as a capacitively coupled plasma chamber, etc., in some embodiments, the above operations are applicable to other types of plasma chambers, such as induction Plasma chambers for coupled plasma (ICP) reactors, transformer coupled plasma (TCP) reactors, conductor tools, electron cyclotron resonance (ECR) reactors, etc. For example, the RF generator 132 (FIG. 1) is connected to an inductor in the plasma chamber of the ICP reactor.

It should also be noted that although the above operations are described as being performed by the host controller 224 (FIG. 1), in some embodiments, these operations may be performed by one or more processors of the host controller 224, or by multiple host systems Multiple processors, or multiple processors of the RF generator.

I should note that although the above embodiments are related to the RF signal provided to the lower electrode of the chuck of the plasma chamber and the upper electrode of the plasma chamber is grounded, in several embodiments, the RF signal is provided above Electrode and ground the lower electrode.

The embodiments described herein can be implemented in a variety of computer system architectures, including handheld hardware units, microprocessor systems, microprocessor-based or programmable consumer electronics, microcomputers, mainframe computers, and the like. The present invention can also be implemented in a decentralized computing environment, where tasks are performed through remote processing hardware units connected via a network.

After understanding the above embodiments, I should understand that these embodiments can be performed using various computers, where the operations involve data stored in a computer system. These operations are operations requiring physical manipulations of physical quantities. Any operation described herein that forms part of the invention is a useful mechanical operation. The embodiments are also related to a hardware unit or device used to perform these operations. Equipment can be constructed especially for special purpose computers. When it is defined as a special-purpose computer, while the computer can still perform special purposes, it can also perform other processing, program execution, or routine execution of non-special-use parts. In some embodiments, operations may be processed by a computer, where the computer is selectively activated or configured by one or more computer programs stored in computer memory, cache memory, or obtained through a network. Be thorough When data is obtained over the network, it can be processed by other computers on the network, such as cloud computing resources.

One or more embodiments can also be made as computer-readable code on a non-transitory computer-readable medium. In some embodiments, the non-transitory computer-readable medium is a memory element capable of storing data, wherein the memory element can be thereafter read by a computer system. Examples of non-transitory computer-readable media include hard drives, network-attached storage (NAS), ROM, RAM, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical and non-optical data storage hardware units. Non-transitory computer-readable media may include computer-readable tangible media, where the media is distributed through a computer system connected to a network, so that the computer-readable code is stored and executed in a distributed manner.

Although the above method operations are described in a specific order, I should understand that other tasks can be performed between operations, or operations can be adjusted so that they occur at slightly different times, or they can be dispersed in the system, where only overlapping operations Processing is performed in a desired manner and the system allows processing operations to occur at different intervals related to processing.

One or more features of any embodiment may be combined with one or more features of any other embodiment without departing from the scope described by the various embodiments described in this disclosure.

Although the foregoing embodiments have been described in detail for the purpose of clear understanding, it is obvious that certain changes and modifications can be implemented within the scope of the accompanying patent application. Therefore, the embodiments of the present invention should be considered as illustrative and not restrictive, and the embodiments of the present invention are not limited to the details provided herein, but are within the scope and equality of the scope of the accompanying patent application. In-kind modification.

Claims (43)

A method for achieving a predetermined processing rate includes: receiving a measurement value of a variable measured at an output end of a radio frequency (RF) generator, wherein the measurement value is performed on a work piece in a plasma chamber; The processing is associated, wherein the plasma chamber is connected to an impedance matching circuit via a radio frequency (RF) transmission line, wherein the output of the RF generator is connected to the impedance matching circuit via an RF cable; the measurement of the variable The value is passed through a computer-generated model to generate a calculated value of the variable at the output of the computer-generated model; identify a calculated processing rate associated with the calculated value of the variable; and identify the desired to be achieved based on the calculated processing rate The predetermined processing rate; identifying a predetermined variable to be reached at the output of the computer-generated model based on the predetermined processing rate; identifying a first characteristic associated with a real part of the predetermined variable, wherein the first characteristic A first variable circuit component belonging to the impedance matching circuit; controlling the first variable circuit component to achieve the first characteristic to further achieve the predetermined change Identifying a second characteristic associated with an imaginary part of the predetermined variable, wherein the second characteristic belongs to a second variable circuit component within the impedance matching circuit; and sending a signal to the first Two variable circuit components are used to achieve the second characteristic to further achieve the imaginary part of the predetermined variable. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the calculated value of the variable includes a complex voltage and current. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the first variable circuit component includes a capacitor and the first characteristic includes a capacitance of the capacitor. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the second variable circuit component includes a capacitor and the second characteristic includes a capacitance of the capacitor. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the first variable circuit component includes an inductor and the first characteristic includes an inductance of the inductor. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the second variable circuit component includes an inductor and the second characteristic includes an inductance of the inductor. For example, the method for achieving a predetermined processing rate in item 1 of the patent application scope further includes: sending a signal to a controller of the RF generator to change the operating frequency of the RF generator to achieve the predetermined processing rate. For example, the method for achieving a predetermined processing rate in item 7 of the scope of patent application, wherein processing the work piece includes etching the work piece or depositing material on the work piece. For example, the method for achieving a predetermined processing rate in the first patent application scope, wherein the second variable circuit component is connected to an inductor of the impedance matching circuit. For example, the method for achieving a predetermined processing rate according to item 9 of the application, wherein the inductor is connected to the plasma chamber. For example, the method for achieving a predetermined processing rate in the first patent application range, wherein the RF generator is connected to the first and the second variable circuit components. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein each of the first variable circuit component and the second variable circuit component is connected to an output terminal of the RF generator. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the first variable circuit component is connected to the second variable circuit component. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the method is used to process a semiconductor wafer to manufacture an integrated circuit. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the step of transmitting the measured value of the variable through the computer generates a model including calculating a directionality of one or more values and the measured value of the variable. A directional sum. The one or more values are characteristics of the circuit components of the computer-generated model. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the calculated processing rate includes an etching rate or a deposition rate, and when the calculation of the variable achieves the calculation of the processing rate, the The calculation processing rate is associated with the calculated value of the variable. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the predetermined processing rate includes an etching rate or a deposition rate, and when the achievement of the predetermined variable facilitates the achievement of the predetermined processing rate, the predetermined processing rate Associated with the predetermined variable. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the predetermined variable includes an impedance. For example, the method for achieving a predetermined processing rate in the first scope of the patent application, wherein the real part is a constant, the constant is not affected by the change of the operating frequency of the RF generator, and the imaginary part depends on the RF generator. Operating frequency. A host controller includes: a memory element for storing a complex variable; a host processor connected to the memory element; the host processor is used for: receiving an output of a radio frequency (RF) generator; A measured value of a measured variable, wherein the measured value is associated with processing a work piece in a plasma chamber, where the plasma chamber is connected to an impedance matching circuit via a radio frequency (RF) transmission line Wherein the output of the RF generator is connected to the impedance matching circuit via an RF cable; the measured value of the variable is passed through a computer-generated model to generate a calculated value of the variable at the output of the computer-generated model Identify a calculation processing rate associated with the calculated value of the variable; identify a predetermined processing rate to be achieved based on the calculation processing rate; identify a predetermined at the output of the computer-generated model based on the predetermined processing rate Variable; identifying a first characteristic associated with a real part of the predetermined variable, wherein the first characteristic belongs to a first variable circuit in the impedance matching circuit Sending a signal to the first variable circuit component to achieve the first characteristic to further achieve the real part of the predetermined variable; identifying a second characteristic associated with an imaginary part of the predetermined variable, wherein the The second characteristic belongs to a second variable circuit component in the impedance matching circuit; and sending a signal to the second variable circuit component to achieve the second characteristic to further achieve the imaginary part of the predetermined variable. For example, the host controller of item 20 of the patent application range, wherein the calculated value of the variable includes a complex voltage and current. A non-transitory computer-readable storage medium has an executable program stored thereon, wherein the program instructs a processor to perform the following operations: receiving a radio frequency (RF) generator A measurement value of a variable measured at the output end, where the measurement value is associated with processing a work piece in a plasma chamber, where the plasma chamber is connected to a radio frequency (RF) transmission line An impedance matching circuit, wherein the output end of the RF generator is connected to the impedance matching circuit via an RF cable; the measured value of the variable is transmitted through a computer-generated model to generate the variable at the output of the computer-generated model. A calculation value; identifying a calculation processing rate associated with the calculation value of the variable; identifying a predetermined processing rate to be achieved based on the calculation processing rate; identifying the output of the computer-generated model based on the predetermined processing rate A predetermined variable at the end; identifying a first characteristic associated with a real part of the predetermined variable, wherein the first characteristic belongs to the impedance matching circuit A first variable circuit component; sending a signal to the first variable circuit component to achieve the first characteristic to further achieve the real part of the predetermined variable; identifying a one associated with an imaginary part of the predetermined variable A second characteristic, wherein the second characteristic belongs to a second variable circuit component in the impedance matching circuit; and sending a signal to the second variable circuit component to achieve the second characteristic to further achieve the predetermined variable The imaginary part. For example, the non-transitory computer-readable storage medium of the 22nd patent application range, wherein the calculated value of the variable includes a complex voltage and current. A method for controlling a processing rate includes receiving a measurement value of a variable measured at an output end of a radio frequency (RF) generator, wherein the output end of the RF generator is connected to an impedance matching circuit via an RF cable. Wherein the impedance matching circuit is connected to a plasma chamber via an RF transmission line; transmitting the measured value of the variable through a computer-generated model to generate a calculated value of the variable at the output end of the computer-generated model; Determining whether the calculated value of the variable matches an expected value of the variable; and controlling a variable circuit component of the impedance matching circuit until the calculated value matches the expected value of the variable. For example, the method for controlling the processing rate of item 24 of the patent application, wherein the variable is an impedance, and the step of controlling the variable circuit component includes controlling a series component of the impedance matching circuit to achieve the measurement of the impedance. A match between a real part of the value obtained and a real part of the expected value of the impedance. For example, the method for controlling the processing rate of item 25 of the patent application, wherein the step of controlling the variable circuit component includes controlling a shunt component of the impedance matching circuit to achieve a virtual value of the value measured at the impedance. A match between the part and an imaginary part of the expected value of the impedance. For example, the method for controlling the processing rate of item 24 of the application, wherein the step of transmitting the measured value of the variable through the computer-generated model includes calculating the measured value of the variable and the complex number of the computer-generated model. A directional sum of complex values of electronic components. For example, the method for controlling the processing rate of the scope of application for patent No. 24, wherein the computer-generated model has a combined impedance of the RF cable and the impedance matching circuit. For example, the method for controlling the processing rate of item 24 of the patent application, wherein the computer-generated model has a combined impedance of the RF cable, the impedance matching circuit, and at least a part of the RF transmission line. For example, the method for controlling the processing rate of the scope of application for the patent No. 24, wherein the variable is a complex voltage and current, or an impedance. A host controller includes: a memory element for storing a complex variable; and a host processor connected to the memory element. The host processor is used to: receive at an output end of a radio frequency (RF) generator One of the measured values of the complex variable, wherein the output of the RF generator is connected to an impedance matching circuit via an RF cable, and the impedance matching circuit is connected to a plasma chamber via an RF transmission line; The measured value of the complex variable is passed through a computer-generated model to generate a calculated value of the complex variable at the output end of the computer-generated model; determining whether the calculated value of the complex variable matches an expected value of the complex variable And controlling a variable circuit component of the impedance matching circuit until the calculated value matches the expected value of the complex variable. For example, the host controller of claim 31, wherein the complex variable is a complex impedance, and in order to control the variable circuit component, the processor is configured to control a series component of the impedance matching circuit to A match is achieved between a real part of the value of the complex impedance measured and a real part of the expected value of the complex impedance. For example, the host controller of the scope of patent application No. 32, in order to control the variable circuit component, the processor is configured to control a shunt component of the impedance matching circuit to achieve the measurement of the complex impedance A match between an imaginary part of the value and an imaginary part of the expected value of the complex impedance. For example, the host controller of claim 31, in order to transfer the measured value of the complex variable through the computer-generated model, the processor is configured to calculate the measured value of the complex variable and The computer generates a directional sum of the complex values of the complex electronic components of the model. For example, the host controller of claim 31, wherein the computer-generated model has a combined impedance of the RF cable and the impedance matching circuit. For example, the host controller of claim 31, wherein the computer-generated model has a combined impedance of at least a part of the RF cable, the impedance matching circuit, and the RF transmission line. For example, the host controller of the scope of patent application No. 31, wherein the complex variable is a complex voltage and current, or an impedance. A plasma system includes: a radio frequency (RF) generator for generating an RF signal, wherein the RF generator has an output end; and an impedance matching circuit connected to an output end of the RF generator through an RF cable. To receive the RF signal via the RF cable, wherein the impedance matching circuit is used to modify the RF signal to generate a modified RF signal; a plasma chamber is connected to the impedance matching circuit via an RF transmission line, wherein the The RF transmission line is used to transmit the modified RF signal to the plasma chamber; and a host controller connected to the RF generator, wherein the host controller includes: a memory element for storing a complex variable; a A host processor connected to the memory element, the host processor being configured to: receive a measurement value of the complex variable measured at the output of the RF generator; pass the measured value of the complex variable through A computer-generated model to generate a calculated value of the complex variable at the output of the computer-generated model; determining whether the calculated value of the complex variable matches an expected value of the complex variable; and controlling the impedance A variable circuit components with the circuit until the calculated value matches the expected value of the complex variable. For example, the plasma system of claim 38, wherein the complex variable is a complex impedance, and in order to control the variable circuit component, the processor is configured to control a series component of the impedance matching circuit to A match is achieved between a real part of the value of the complex impedance measured and a real part of the expected value of the complex impedance. For example, in the plasma system of claim 39, in order to control the variable circuit component, the processor is configured to control a shunt component of the impedance matching circuit to achieve the measurement of the complex impedance. A match between an imaginary part of the value and an imaginary part of the expected value of the complex impedance. For example, in the plasma system of claim 38, in order to transfer the measured value of the complex variable through the computer-generated model, the processor is configured to calculate the measured value of the complex variable and The computer generates a directional sum of the complex values of the complex electronic components of the model. For example, the plasma system of claim 38, wherein the computer-generated model has a combined impedance of the RF cable and the impedance matching circuit. For example, the plasma system of claim 38, wherein the computer-generated model has a combined impedance of at least a part of the RF cable, the impedance matching circuit, and the RF transmission line, wherein the complex variable is a complex voltage And current, or an impedance.