TWI422060B - Warm hue light source - Google Patents
Warm hue light source Download PDFInfo
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- TWI422060B TWI422060B TW097125499A TW97125499A TWI422060B TW I422060 B TWI422060 B TW I422060B TW 097125499 A TW097125499 A TW 097125499A TW 97125499 A TW97125499 A TW 97125499A TW I422060 B TWI422060 B TW I422060B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Description
本發明是有關於一種使用發光二極體作為光源的裝置，特別是使用混光的發光二極體混成暖色系光源。 The present invention relates to a device using a light-emitting diode as a light source, in particular, a light-emitting diode-mixed warm color light source using a mixed light.
發光二極體是一種半導體組件，可以在很小的體積內以很有效率的模式產生高亮度的光源。而發光二極體所產生的光源具有相當優異的單色性的波峰。如果要使用發光二極體產生白色光，必須要混合數種色光。一種簡單的模式是使用紅色、藍色，以及綠色的發光二極體產生白光。然而，目前以三色發光二極體混成的白光，並不均勻，並且需要使用複雜的光學模式將各色光混合成白光。再者，發光二極體的亮度會隨著半導體的溫度而改變，當發光二極體的溫度增加，混成的白光也會改變。另外，每個發光二極體的使用壽命並不相同，當單一發光二極體失效的時候，產品的色光的改變會很明顯而讓使用者覺得很刺眼。因此，提供理想的白光是一重要的議題。 A light-emitting diode is a semiconductor component that produces a high-brightness light source in a very efficient mode in a very small volume. The light source produced by the light-emitting diode has a relatively excellent monochromatic peak. If you want to use a light-emitting diode to produce white light, you must mix several shades of light. A simple mode is to use white, red, blue, and green light-emitting diodes to produce white light. However, the white light mixed with the three-color light-emitting diode is not uniform, and it is necessary to mix the light of each color into white light using a complicated optical mode. Furthermore, the brightness of the light-emitting diode changes with the temperature of the semiconductor, and as the temperature of the light-emitting diode increases, the mixed white light also changes. In addition, the service life of each LED is not the same. When the single LED is disabled, the color change of the product will be obvious and the user will feel glare. Therefore, providing ideal white light is an important issue.
目前的白光發光二極體所發射的光源，主要是以藍光發光二極體加上黃色螢光粉混合成白光。然而，這樣的混光模式，提供的白光是屬於冷色系的白光，無法提供暖色系的白光。因此，Shimizu等在美國專利第6577073號裡提出使用藍光、紅光，以及 螢光粉產生不同色系的白光，其中螢光粉的發射波長在紅光與藍光之間。這種模式可以產生暖色系的白光，但是調配色光的模式，必須同時調整藍光發光二極體的波長、藍光發光二極體的發光強度、紅光發光二極體的波長、紅光發光二極體的發光強度，以及螢光粉的發光頻譜。而這樣的調配模式過於複雜。另外，就封裝的架構而言，紅光發光二極體會吸收藍光而降低整體的光源輸出。 The light source emitted by the current white light emitting diode is mainly composed of a blue light emitting diode and a yellow fluorescent powder mixed into white light. However, in such a light mixing mode, the white light provided is a white light of a cool color system, and cannot provide a warm white color. Therefore, Shimizu et al., in U.S. Patent No. 6,576,073, proposes the use of blue light, red light, and The phosphor powder produces white light of different color systems, wherein the emission wavelength of the phosphor powder is between red light and blue light. This mode can produce warm white light, but the mode of color light must adjust the wavelength of the blue light emitting diode, the light intensity of the blue light emitting diode, the wavelength of the red light emitting diode, and the red light emitting diode. The luminous intensity of the body, as well as the luminescence spectrum of the phosphor. This type of deployment is too complicated. In addition, in terms of the package architecture, the red light emitting diode absorbs blue light and reduces the overall light source output.
本發明的主要目的在於使用波長約在550至600奈米之間的發光二極體，更容易地降低色溫而形成暖色系白光。 The main object of the present invention is to use a light-emitting diode having a wavelength of about 550 to 600 nm to more easily lower the color temperature to form warm white light.
本發明的另一目的在於該色光對人眼的敏感度較強，與紅光發光二極體相比較之下在相同的輸出功率可呈現的亮度(mcd)較高。 Another object of the present invention is that the color light is more sensitive to the human eye, and the brightness (mcd) that can be exhibited at the same output power is higher than that of the red light emitting diode.
本發明的又一目的在於暖色系白光的演色性較高，具有較高的色彩呈現。 Still another object of the present invention is that the warm color white light has a higher color rendering property and a higher color rendering.
本發明的再一目的在於使用下沉式導線架，可以有效避免該色光發光二極體對於藍光的吸收。 A further object of the present invention is to use a sinker lead frame to effectively avoid absorption of blue light by the color light emitting diode.
根據上述目的，本發明使用藍色發光二極體與黃色螢光粉混成白光，另外使用增加一長波長發光二極體形成暖色系白光，其中色溫可降至3000K至2000K左右。長波長發光二極體的發光波長約在550至600奈米之間，較佳的使用波長約為590奈米。增加長波長發光二極體的發光強度可以降低色溫。 According to the above object, the present invention uses a blue light-emitting diode to mix white light with yellow phosphor powder, and additionally uses a long-wavelength light-emitting diode to form warm white light, wherein the color temperature can be reduced to about 3000K to 2000K. The long-wavelength light-emitting diode has an emission wavelength of about 550 to 600 nm, and a preferred wavelength of about 590 nm. Increasing the luminous intensity of the long-wavelength light-emitting diode can lower the color temperature.
封裝的模式，可以將兩個發光二極體封裝在同一個殼體內，或是 分別封裝成兩個殼體。如果兩個發光二極體封裝在一個殼體內，依照不同的打線模式可以是並聯電路或是串連電路。如果封裝在兩個殼體內，對於一般的高功率發光二極體，以白光發光二極體與長波長發光二極體的數量比例為1比20至20比1，可以得到2500K色溫的白光。 Package mode, which can pack two LEDs in the same housing, or They are packaged into two housings respectively. If the two LEDs are packaged in one housing, the parallel connection mode or the series connection circuit may be used according to different wiring patterns. If it is packaged in two housings, for a general high-power light-emitting diode, the ratio of the number of white light-emitting diodes to the long-wavelength light-emitting diodes is 1 to 20 to 20 to 1, and white light of 2500 K color temperature can be obtained.
使用的螢光粉，可以是氮化物或是氮氧化物，例如CaSiN2：Eu2+、Ba2Si5N8：Eu2+、AExSiyNz：Eu2+、CaSiAlN3：Eu2+，或是SiAlOxNy。也可以使用硫化物螢光粉，例如CaS：Eu2+、CaS‧A：Eu，或是CaS：Ce,X。也可以使用矽酸鹽類的螢光粉、釔鋁石榴石(YAG)，或是TAG等。螢光粉的發射主波長約在540至600奈米。 The phosphor used may be a nitride or an oxynitride such as CaSiN 2 :Eu 2+ , Ba 2 Si 5 N 8 :Eu 2+ , AE x Si y N z :Eu 2+ , CaSiAlN 3 :Eu 2+ , or SiAlO x N y . Sulfide phosphors such as CaS:Eu 2+ , CaS‧A:Eu, or CaS:Ce,X can also be used. It is also possible to use a bismuth fluorite powder, yttrium aluminum garnet (YAG), or TAG. The emission wavelength of the phosphor powder is about 540 to 600 nm.
本發明使用下沉式導線架，將長波長發光二極體固定在下沉式導線架上，可以避免長波長發光二極體對藍光的吸收。 The invention uses a sunken lead frame to fix the long-wavelength light-emitting diode on the sunken lead frame, which can avoid the absorption of blue light by the long-wavelength light-emitting diode.
在本發明中，長波長發光二極體的材質可以是AlInGaP或是InGaN。 In the present invention, the material of the long-wavelength light-emitting diode may be AlInGaP or InGaN.
10‧‧‧導線架 10‧‧‧ lead frame
12‧‧‧殼體 12‧‧‧ housing
21、22‧‧‧發光二極體 21, 22‧‧‧Lighting diodes
24‧‧‧發光二極體 24‧‧‧Lighting diode
圖1顯示色溫與長波長發光二極體的關係圖；圖2顯示藍色發光二極體與長波長發光二極體封裝在同一個殼體內的架構示意圖，其中是使用並聯電路的打線模式；圖3顯示藍色發光二極體與長波長發光二極體封裝在同一個殼體內的架構示意圖，其中是使用串聯電路的打線模式；圖4顯示將藍色發光二極體與長波長發光二極體封裝在不同的殼體所組成的光源的示意圖； 圖5顯示將藍色發光二極體與長波長發光二極體封裝在不同的殼體所組成的光源的另一示意圖；圖6顯示在本發明中以藍光發光二極體，黃色螢光粉，以及長波長發光二極體混成的暖色系白光的CIE圖；以及圖7顯示在圖6中形成暖色系白光的光譜圖。 1 shows a relationship between a color temperature and a long-wavelength light-emitting diode; FIG. 2 shows a schematic diagram of a blue light-emitting diode and a long-wavelength light-emitting diode packaged in the same casing, wherein a wire-bonding mode using a parallel circuit; FIG. 3 is a schematic view showing the architecture of a blue light emitting diode and a long wavelength light emitting diode packaged in the same casing, wherein a wire bonding mode using a series circuit; FIG. 4 shows a blue light emitting diode and a long wavelength light emitting diode. A schematic diagram of a light source composed of a pole body packaged in different housings; FIG. 5 shows another schematic diagram of a light source composed of a blue light emitting diode and a long wavelength light emitting diode packaged in different housings; FIG. 6 shows a blue light emitting diode, yellow phosphor powder in the present invention. And a CIE map of warm-white light mixed with a long-wavelength light-emitting diode; and FIG. 7 shows a spectrum of warm white light formed in FIG.
相較於現有技術使用紅光發光二極體，本發明使用長波長發光二極體形成暖色系白光。在本發明中，只要簡單的調配長波長發光二極體的強度即可調整白光的色溫。如圖1所示，當長波長發光二極體的數量增加，色溫就可以從6000K以上降低到2000K左右，其中，暖色系白光是以藍光發光二極體與黃色螢光粉混成的白光發光二極體封裝單體，與長波長發光二極體單獨封裝在封裝單體之間混光而成。在圖1中，只要長波長發光二極體的數量的增加，色溫的降低就相當的明顯。 The present invention uses a long wavelength light emitting diode to form warm color white light compared to the prior art using a red light emitting diode. In the present invention, the color temperature of white light can be adjusted by simply adjusting the intensity of the long-wavelength light-emitting diode. As shown in Fig. 1, when the number of long-wavelength light-emitting diodes increases, the color temperature can be reduced from 6000K to 2000K. Among them, the warm white light is a white light-emitting light mixed with a blue light-emitting diode and a yellow fluorescent powder. The polar package monomer is mixed with the long wavelength light emitting diode separately packaged between the package monomers. In Fig. 1, as long as the number of long-wavelength light-emitting diodes increases, the decrease in color temperature is quite remarkable.
在本發明中，長波長發光二極體的波長約在550到600奈米之間。在本實施例中，是使用波峰在590奈米發光二極體，其中誤差約在正負五個奈米之間。 In the present invention, the wavelength of the long-wavelength light-emitting diode is between about 550 and 600 nm. In this embodiment, a peak of 590 nm light-emitting diodes is used, with an error of between about plus or minus five nanometers.
長波長發光二極體的材質可以是GaP、InGaP、AlGaP、AlInP、AlInGaP、InGaN，或是AlInGaN。如果是以磷化物為材質，可以使用GaAs或是InP作為磊晶層(Epitaxy)的基材，如果是以氮化物為材質，可以使用藍寶石、SiC、Si，或是GaN做為基材。使用氮化物材質的長波長發光二極體可以有較好的使用壽命。如果基 材是導體，長波長發光二極體在晶片切割製程中可以形成雙面電極；如果基材不是導體，長波長發光二極體在晶片切割製程中形成單面電極。 The material of the long-wavelength light-emitting diode may be GaP, InGaP, AlGaP, AlInP, AlInGaP, InGaN, or AlInGaN. If it is made of phosphide, GaAs or InP can be used as the substrate of the epitaxial layer. If it is made of nitride, sapphire, SiC, Si, or GaN can be used as the substrate. A long-wavelength light-emitting diode using a nitride material can have a good service life. If base The material is a conductor, and the long-wavelength light-emitting diode can form a double-sided electrode in the wafer cutting process; if the substrate is not a conductor, the long-wavelength light-emitting diode forms a single-sided electrode in the wafer cutting process.
藍光發光二極體的材質主要是以氮化物為主，可以是GaN，InGaN，或是AlInGaN等。基材可以是藍寶石，SiC，Si，或是GaN。如果基材是導體，長波長發光二極體在晶片切割製程中可以形成雙面電極；如果基材不是導體，長波長發光二極體在晶片切割製程中形成單面電極。在本發明中，藍光發光二極體的波長約在440到470奈米之間，在本實例中是使用波峰在460奈米的發光二極體。 The material of the blue light emitting diode is mainly nitride, and may be GaN, InGaN, or AlInGaN. The substrate can be sapphire, SiC, Si, or GaN. If the substrate is a conductor, the long-wavelength light-emitting diode can form a double-sided electrode in the wafer dicing process; if the substrate is not a conductor, the long-wavelength light-emitting diode forms a single-sided electrode in the wafer dicing process. In the present invention, the blue light-emitting diode has a wavelength of between about 440 and 470 nanometers, and in this example, a light-emitting diode having a peak at 460 nm is used.
發光二極體的製程，包含了在有機金屬物化學氣相沈積室裡進行磊晶，其中磊晶的條件依照發光二極體的材料，發光頻率等有所不同。然後在將磊晶完成的成品經過晶片切割後形成一個個的晶片(chip)。 The process of the light-emitting diode includes epitaxial deposition in an organometallic chemical vapor deposition chamber, wherein the conditions of the epitaxial crystal are different according to the material of the light-emitting diode, the light-emitting frequency, and the like. Then, a chip is formed after the epitaxial finished product is subjected to wafer dicing.
螢光粉的材質可以是氮化物、氮氧化物、硫化物、矽酸鹽、釔鋁石榴石，或是TAG等。氮化物的螢光粉可為CaSiN2：Eu2+、Ba2Si5N8：Eu2+、AExSiyNz：Eu2+，或是CaSiAlN3：Eu2+等，而氮氧化物的螢光粉可為SiAlOxNy。硫化物的螢光粉可為CaS：Eu2+、CaS‧A：Eu，或是CaS：Ce,X等。另外，亦可以使用矽酸鹽族系的螢光粉、YAG(釔鋁石榴石)或是TAG(鋱鋁石榴石)等的螢光粉，螢光粉的發射主波長約在540至600奈米。在本實施例中，是使用黃色的螢光粉將藍光發光二極體的藍光先混合成白光，所使用的螢光粉主要是氮化物、氮氧化物、硫化物，或是矽酸鹽。上述的螢光粉 是屬於無機螢光粉，其形成模式主要是以高溫燒結之後研磨成粉粒。 The material of the phosphor powder may be nitride, oxynitride, sulfide, silicate, yttrium aluminum garnet, or TAG. The nitride phosphor may be CaSiN 2 :Eu 2+ , Ba 2 Si 5 N 8 :Eu 2+ , AE x Si y N z :Eu 2+ , or CaSiAlN 3 :Eu 2+ , etc., and oxynitride The phosphor of the object may be SiAlO x N y . The phosphor powder may be CaS:Eu 2+ , CaS‧A:Eu, or CaS:Ce,X or the like. In addition, it is also possible to use a phosphor powder of a citrate family, a YAG (yttrium aluminum garnet) or a fluorescent powder such as TAG (yttrium aluminum garnet), and the emission wavelength of the phosphor powder is about 540 to 600 nm. Meter. In this embodiment, the blue light of the blue light emitting diode is first mixed into white light using a yellow phosphor, and the fluorescent powder used is mainly a nitride, an oxynitride, a sulfide, or a niobate. The above-mentioned phosphor powder is an inorganic phosphor powder, and its formation mode is mainly sintered at a high temperature and then ground into powder particles.
封裝的架構，可以是使用針腳式的封裝體，或是表面黏著型(SMD)封裝體。不同的封裝體會對應到不同的應用，在本實施例中主要是以表面粘著型的封裝體為主，但是本發明不限於應用在表面粘著型封裝體。封裝的模式，可以將兩種發光二極體封裝在同一個殼體內，然後在灌膠的時候混入螢光粉，然而亦可以使用轉移壓模(transfer-molding)的模式。殼體的材質，可以是高溫陶瓷、低溫陶瓷、silicon、氧化鋁、氮化鋁或是塑膠(例如PPA)等。發光二極體的封裝模式可以是打線(wire-bonding)封裝或是覆晶(flip-chip)封裝。本發明可以同時應用在這兩種封裝模式，例如藍光發光二極體與長波長發光二極體同時使用打線封裝或是覆晶封裝，或是兩種發光二極體的分別使用不同的封裝模式，例如藍光發光二極體使用覆晶封裝而長波長發光二極體使用打線封裝。在本實施例中主要是以打線封裝為說明的對象。在打線封裝中，不同的線上模式可以讓藍光發光二極體與長波長發光二極體之間的電路是並聯或是串聯。 The package architecture can be either a pin-type package or a surface mount (SMD) package. Different packages will correspond to different applications. In this embodiment, the surface-adhesive package is mainly used, but the present invention is not limited to application to the surface-adhesive package. The package mode allows the two light-emitting diodes to be packaged in the same housing and then mixed with phosphor powder during the filling process. However, a transfer-molding mode can also be used. The material of the casing may be high temperature ceramics, low temperature ceramics, silicon, aluminum oxide, aluminum nitride or plastic (for example, PPA). The package mode of the light emitting diode may be a wire-bonding package or a flip-chip package. The invention can be applied to both package modes at the same time, for example, the blue light emitting diode and the long wavelength light emitting diode are simultaneously used in a wire bonding package or a flip chip package, or the two light emitting diodes are respectively used in different packaging modes. For example, a blue light emitting diode uses a flip chip package and a long wavelength light emitting diode is packaged using a wire bond. In the present embodiment, the object is mainly illustrated by wire bonding. In the wire package, different line modes allow the circuits between the blue light emitting diode and the long wavelength light emitting diode to be connected in parallel or in series.
如圖2所示，是顯示並聯電路的封裝架構示意圖。在本實施例中，殼體12具有反射面可以將光線反射出去，長波長發光二極體22固定在下沉式導線架10上，可以降低長波長發光二極體22對於藍光的吸收。在圖2中，長波長發光二極體22是雙面電極的架構，因此只有一條打線架構，而藍光發光二極體21是單面電極的架構，因此有兩條打線。當藍光發光二極體21與長波長發光二極體22 均固定並且完成打線之後，就可以將膠材灌入殼體12內，其中螢光粉是按照比例混入膠材內。在本實施例中，膠材可以使用環氧樹脂(epoxy)，或是矽氧烷(silicone)。膠材的選擇，需要考慮到透光性、光線的折射系數，以及與殼體12之間的關連性，亦即膠材與殼體12之間的氣密性。當灌膠程式完成之後，可以將一透鏡安裝在殼體12的出光面上，以修正發光二極體的光學效果。上述的步驟是選擇性的步驟。 As shown in FIG. 2, it is a schematic diagram showing a package structure of a parallel circuit. In this embodiment, the housing 12 has a reflecting surface for reflecting light, and the long-wavelength LED 22 is fixed on the sinking lead frame 10, which can reduce the absorption of blue light by the long-wavelength LEDs 22. In FIG. 2, the long-wavelength light-emitting diode 22 is a double-sided electrode structure, so that there is only one wire bonding structure, and the blue light-emitting diode 21 is a single-sided electrode structure, so there are two wires. When the blue light emitting diode 21 and the long wavelength light emitting diode 22 After the wires are fixed and the wire is finished, the glue can be poured into the casing 12, wherein the phosphor powder is mixed into the rubber according to the proportion. In this embodiment, the rubber material may be epoxy or silicone. The choice of the glue material needs to take into account the light transmission, the refractive index of the light, and the connection with the casing 12, that is, the airtightness between the rubber material and the casing 12. After the glue filling process is completed, a lens can be mounted on the light emitting surface of the housing 12 to correct the optical effect of the light emitting diode. The above steps are optional steps.
在本實施例中，封裝的過程包含先將發光二極體21、22依序使用固晶膠將發光二極體固定在導線架10上，然後進入烘烤箱中將固晶膠固化以固定住發光二極體21、22。之後進行打線程式將發光二極體21、22的電極分別連接至導線架10上。之後，進行灌膠程式後再次送入烤箱中烘烤使得膠材固化。 In this embodiment, the encapsulation process comprises first fixing the light-emitting diodes on the lead frame 10 by using the solid-state adhesives, and then entering the baking box to solidify the solid glue to fix the LEDs. The light-emitting diodes 21, 22 are housed. Thereafter, the electrodes of the light-emitting diodes 21, 22 are respectively connected to the lead frame 10 in a threaded manner. After that, the glue is applied to the oven and then baked in the oven to cure the glue.
如圖3所示，是顯示串聯電路的封裝架構示意圖。在本實施例中，殼體12具有反射面可以將光線反射出去，長波長發光二極體22固定在下沉式導線架10上，可以降低長波長發光二極體22對於藍光的吸收。在圖2中，長波長發光二極體22是雙面電極的架構，因此只有一條打線架構，而藍光發光二極體21是單面電極的架構，因此有兩條打線。在本實施例中，導線直接連接藍光發光二極體21的電極與長波長發光二極體22的電極。當藍光發光二極體21與長波長發光二極體22均固定並且完成打線之後，就可以將膠材灌入殼體12內，其中螢光粉是按照比例混入膠材內。在本實施例中，膠材可以使用環氧樹脂(epoxy)，或是矽氧烷(silicone)。膠材的選擇，需要考慮到透光性、光線的折射系數，以及與殼體 12之間的關連性，亦即膠材與殼體12之間的氣密性。 As shown in FIG. 3, it is a schematic diagram of a package architecture showing a series circuit. In this embodiment, the housing 12 has a reflecting surface for reflecting light, and the long-wavelength LED 22 is fixed on the sinking lead frame 10, which can reduce the absorption of blue light by the long-wavelength LEDs 22. In FIG. 2, the long-wavelength light-emitting diode 22 is a double-sided electrode structure, so that there is only one wire bonding structure, and the blue light-emitting diode 21 is a single-sided electrode structure, so there are two wires. In the present embodiment, the wires are directly connected to the electrodes of the blue light-emitting diode 21 and the electrodes of the long-wavelength light-emitting diode 22. After the blue light emitting diode 21 and the long wavelength light emitting diode 22 are both fixed and the wire is completed, the glue can be poured into the casing 12, wherein the phosphor powder is mixed into the rubber material in proportion. In this embodiment, the rubber material may be epoxy or silicone. The choice of glue needs to take into account the light transmission, the refractive index of the light, and the shell The correlation between 12, that is, the airtightness between the rubber and the casing 12.
不同的封裝體可以決定有兩個電極、三個電極，或是四個電極。三個電極的電路，可以共用陰極或是共用陽極，而兩個電極必須要同時共用陰極與陽極。 Different packages can have two electrodes, three electrodes, or four electrodes. The three-electrode circuit can share a cathode or a common anode, and the two electrodes must share both the cathode and the anode.
另外，亦可以將兩個發光二極體先封裝在不同的殼體內，例如以藍光發光二極體與螢光粉先形成白光發光二極體。利用數量不同的白光發光二極體與長波長發光二極體，形成暖色系的白光，白光發光二極體與長波長發光二極體的數量比例約在1比20至20比1之間。在圖4與圖5中，顯示本發明的一個實施例是白光發光二極體的數量比上長波長發光二極體的數量為15比4以及17比5，可以提供色溫在3000K左右的白光。圖4與圖5顯示白光發光二極體24與長波長發光二極體22的分佈，然而亦可以有其他各種分佈，其中分佈的圖案可以是週期性或是非週期性。 In addition, the two light emitting diodes may be first packaged in different housings, for example, a white light emitting diode is first formed by the blue light emitting diode and the fluorescent powder. The white light emitting diode and the long wavelength light emitting diode of different numbers are used to form white light of warm color, and the ratio of the number of white light emitting diodes to the long wavelength light emitting diode is about 1 to 20 to 20 to 1. In FIG. 4 and FIG. 5, an embodiment of the present invention is shown in which the number of white light emitting diodes is 15 to 4 and 17 to 5 compared to the number of upper long wavelength light emitting diodes, and white light having a color temperature of about 3000 K can be provided. . 4 and 5 show the distribution of the white light emitting diode 24 and the long wavelength light emitting diode 22, however, there may be other various distributions in which the pattern of the distribution may be periodic or non-periodic.
圖6顯示在本發明中，利用白光發光二極體與長波長發光二極體組成暖色系白光的色度值(CIE)圖。在圖中左下角的小方塊是藍光發光二極體所發出光源的色坐標，在x坐標接近0.4的小方塊是黃色螢光粉的色坐標，在x坐標接近0.6的小方塊是長波長發光二極體的色坐標。在後兩個小方塊之間的斜直線式表示3000K的色溫，而在CIE圖中的曲線是表示黑體輻射的曲線，其中斜直線與曲線相交的小方塊是表示色溫為3000K的白光，是由藍光發光二極體所標示的小方塊，黃色螢光粉所標示的小方塊，以及長波長發光二極體所標示的小方塊所混光的結果。 Fig. 6 is a view showing a chromaticity value (CIE) chart of a warm white color white light using a white light emitting diode and a long wavelength light emitting diode in the present invention. The small square in the lower left corner of the figure is the color coordinate of the light source emitted by the blue light emitting diode. The small square with the x coordinate close to 0.4 is the color coordinate of the yellow fluorescent powder, and the small square with the x coordinate close to 0.6 is the long wavelength light. The color coordinates of the diode. The oblique line between the last two small squares represents the color temperature of 3000K, and the curve in the CIE diagram is the curve representing the black body radiation, wherein the small square intersecting the oblique line and the curve is white light indicating that the color temperature is 3000K, which is The small squares marked by the blue light-emitting diode, the small squares marked by the yellow fluorescent powder, and the small squares marked by the long-wavelength light-emitting diodes.
圖7是顯示在圖6中形成暖色系白光的光譜圖，其中藍光發光二極體的波長約在460奈米、螢光粉的波長約在550奈米，以及長波長發光二極體的波長約在590奈米。 Figure 7 is a spectrum diagram showing the formation of warm white light in Figure 6, wherein the wavelength of the blue light emitting diode is about 460 nm, the wavelength of the fluorescent powder is about 550 nm, and the wavelength of the long wavelength light emitting diode. About 590 nm.
由於本發明使用長波長發光二極體，其波長在550至600奈米之間，可以更容易地降低一般白光發光二極體的色溫而形成暖色系白光。而長波長對人眼的敏感度較強，與紅光發光二極體相比較之下在相同的輸出功率可呈現的亮度(mcd)較高。另外，暖色系白光的演色性較高，具有較高的色彩呈現。 Since the present invention uses a long-wavelength light-emitting diode having a wavelength of between 550 and 600 nm, the color temperature of a general white light-emitting diode can be more easily reduced to form warm-white light. The long wavelength is more sensitive to the human eye, and the brightness (mcd) that can be exhibited at the same output power is higher than that of the red light emitting diode. In addition, warm color white light has higher color rendering and higher color rendering.
本發明使用下沉式導線架，可以有效避免長波長發光二極體對於藍光的吸收。整體的封裝架構簡單，成本可以降低。並且，可以使用氮化物系列的琥珀光發光二極體，有較高的使用壽命。 The invention uses a sunken lead frame, which can effectively avoid the absorption of blue light by the long-wavelength light-emitting diode. The overall package architecture is simple and the cost can be reduced. Also, a nitride series of amber light-emitting diodes can be used, which has a high service life.
本發明之技術內容及技術特點已揭示如上，然而熟悉本項技術之人士仍可能基於本發明之教示及揭示而作種種不背離本發明精神之替換及修飾。因此，本發明之保護範圍應不限於實施例所揭示者，而應包括各種不背離本發明之替換及修飾，並為以下之申請專利範圍所涵蓋。 The technical and technical features of the present invention have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims
10‧‧‧導線架 10‧‧‧ lead frame
12‧‧‧殼體 12‧‧‧ housing
21、22‧‧‧發光二極體 21, 22‧‧‧Lighting diodes
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| JP2004356116A (en) * | 2003-05-26 | 2004-12-16 | Citizen Electronics Co Ltd | Light emitting diode |
| CN1783521A (en) * | 2004-12-01 | 2006-06-07 | 中华映管股份有限公司 | White-light luminous diode |
| TW200739956A (en) * | 2005-12-21 | 2007-10-16 | Nec Lighting Ltd | Yellow fluorescent body and white luminant device using the same |
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| JP2004356116A (en) * | 2003-05-26 | 2004-12-16 | Citizen Electronics Co Ltd | Light emitting diode |
| CN1783521A (en) * | 2004-12-01 | 2006-06-07 | 中华映管股份有限公司 | White-light luminous diode |
| TW200739956A (en) * | 2005-12-21 | 2007-10-16 | Nec Lighting Ltd | Yellow fluorescent body and white luminant device using the same |
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