TWI398012B - Surface texturization of solar cell by using multiple-laser beams ablation and solar cell with surface texturization - Google Patents
Surface texturization of solar cell by using multiple-laser beams ablation and solar cell with surface texturization Download PDFInfo
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本發明是一種表面粗化方法,尤其是關於一種用於太陽能電池之多雷射光束表面粗化方法及其應用。The invention relates to a surface roughening method, in particular to a multi-laser beam surface roughening method for solar cells and an application thereof.
太陽光電(Photovoltaic,PV)在節能環保與促進再生能源普及利用的發展雖不缺席,但總是無法佔有主角地位,主要的原因在於目前太陽光電發電成本仍高但能源轉換效率之表現卻不良好,因此如何有效增加太陽能效率為目前多數人研究之重要課題。Although Photovoltaic (PV) is not absent in the development of energy conservation and environmental protection and promoting the popularization of renewable energy, it is always unable to occupy a leading role. The main reason is that the current cost of solar photovoltaic power generation is still high but the performance of energy conversion efficiency is not good. Therefore, how to effectively increase solar energy efficiency is an important topic for most people at present.
目前成本相對低廉的矽太陽能面板,其對可見光平均反射率高達37%左右,換言之,入射的太陽光之中只有63%可以被矽太陽能面板做為光電轉換之用。目前業界皆以silicon nitride(Si3 N4 )作為抗反射層,轉換效率大約17%,雖比沒有增加抗反射鍍層的太陽能面板稍佳,但仍略顯不足。為了提升光轉電能的效率,最有效的技術就是利用表面粗化或加入抗反射層的應用以增加矽晶片照光表面積和入射光反射次數。At present, the cost of the solar panel is relatively low, and the average reflectance of visible light is as high as 37%. In other words, only 63% of the incident sunlight can be used as a photoelectric conversion by the solar panel. At present, silicon nitride (Si 3 N 4 ) is used as an anti-reflection layer, and the conversion efficiency is about 17%. Although it is slightly better than a solar panel without an anti-reflective coating, it is still slightly insufficient. In order to improve the efficiency of light-to-electricity, the most effective technique is to use surface roughening or the application of an anti-reflective layer to increase the surface area of the enamel wafer and the number of incident light reflections.
目前太陽能電池表面粗化的發展方面,以微結構金字塔為主。其中在BCSC(buried contact solar cell)埋入式電極太陽能電池,其表面以蝕刻液製作出金字塔的粗化結構,並在背電極部分也做粗化結構的加工,此類二層粗化的結構,能增加光線在吸收層的停留時間,整體的轉換效率約可達到21~22%。表面粗化技術應用在太陽能電池上,能有效降低反射率,增加光停留於內部的時間,增加光的吸收機率,進而能增加太陽能電池的光電轉換效率。At present, the development of surface roughening of solar cells is dominated by microstructure pyramids. Among them, a buried electrode solar cell in a BCSC (buried contact solar cell) has a roughened structure of a pyramid formed by an etching liquid on the surface thereof, and a roughened structure is also processed in the back electrode portion, and such a two-layer roughened structure is used. It can increase the residence time of light in the absorption layer, and the overall conversion efficiency can reach 21~22%. The surface roughening technology is applied to a solar cell, which can effectively reduce the reflectance, increase the time that the light stays inside, increase the absorption rate of light, and thereby increase the photoelectric conversion efficiency of the solar cell.
各種不同的表面粗化技術中發現,粗化結構之深寬比越大其抗反射效率越高,因此粗化技術以具有週期性奈米結構最佳、不規則奈米粗化結構次之、微米及奈米級混和之不規則粗化及抗反射薄膜效率較差。然而,若要獲得奈米週期性結構,目前以膠狀晶體自組裝奈米材料作為遮罩,再進行蝕刻的效果最佳,但此方式需要較多的步驟,週期僅能以控制奈米球的直徑作變化,相對無法製作形狀較為複雜的粗化表面,而無法達到良好的表面粗化效果。It is found in various surface roughening techniques that the greater the aspect ratio of the roughened structure, the higher the anti-reflection efficiency. Therefore, the roughening technique has the best periodic nanostructure and the irregular nano-roughening structure. The irregular coarsening of the micron and nano-scale mixing and the anti-reflection film are inefficient. However, in order to obtain the nano periodic structure, the colloidal crystal self-assembled nanomaterial is currently used as a mask, and the etching effect is best, but this method requires more steps, and the cycle can only control the nanosphere. The change in the diameter makes it relatively impossible to produce a roughened surface having a complicated shape, and it is impossible to achieve a good surface roughening effect.
為了解決既有的奈米粗化結構製作過程繁雜以及粗化成果受到製程技術之限制無法執行複雜的粗化效果,本發明以多道雷射光束產生的干涉花紋於太陽能電池表面形成週期性粗化表面,而干涉花紋可以非常多變化,達到形成複雜粗化表面之目的。In order to solve the complicated production process of the existing nano-roughened structure and the coarsening result is not limited by the process technology, the complex roughening effect cannot be performed, and the interference pattern generated by the multi-channel laser beam forms a periodic thick surface on the surface of the solar cell. The surface can be changed, and the interference pattern can be changed very much to achieve the purpose of forming a complicated rough surface.
配合解決前述的技術問題,本發明提供一種用於太陽能電池之多雷射光束表面粗化方法,其步驟包含:產生多道雷射光:以雷射經過分光元件產生複數道之雷射光;聚焦多道雷射光於一點產生干涉雷射光:使各雷射光經過一共焦系統而聚焦於一點上,各雷射光於該點產生干涉現象而形成一干涉雷射光;及以干涉雷射光加工粗化太陽能電池表面:係以該干涉雷射光於一太陽能電池之一光電轉換層的表面形成具備週期性的粗化表面。In order to solve the foregoing technical problems, the present invention provides a method for roughening a plurality of laser beam surfaces for a solar cell, the steps comprising: generating a plurality of laser beams: generating a plurality of laser beams by laser passing through the beam splitting element; The ray light strikes the laser light at a point: the laser light is focused on a point by a confocal system, and each laser light generates an interference phenomenon at the point to form an interference laser light; and the roughening solar cell is processed by the interference laser light. Surface: a surface having a periodic roughening surface formed by the interference laser light on the surface of one of the photoelectric conversion layers of a solar cell.
其中,該產生多道雷射光係採用雷射產生一雷射輸出光後,使該雷射輸出光經過一光學繞射元件將雷射分為複數道之雷射光。Wherein, the multi-channel laser light is generated by using a laser to generate a laser output light, and the laser output light is divided into a plurality of laser light by an optical diffraction element.
本發明再提供一種具粗化表面的太陽能電池,其包含依序疊合之一背面導電層、一光電轉換層及一正面導電層,該光電轉換層以一多雷射光束表面粗化方法於該光電轉換層形成粗化表面,該多雷射光束表面粗化方法之步驟包含:產生多道雷射光:以雷射經過分光元件產生複數道之雷射光;聚焦多道雷射光於一點產生干涉雷射光:使各雷射光經過一共焦系統而聚焦於一點上,各雷射光於該點產生干涉現象而形成一干涉雷射光;及以干涉雷射光加工粗化太陽能電池表面:係以該干涉雷射光以光蝕刻於該光電轉換層的表面形成具備週期性的粗化表面。The invention further provides a solar cell with a roughened surface, comprising: a back surface conductive layer, a photoelectric conversion layer and a front conductive layer laminated in sequence, wherein the photoelectric conversion layer is roughened by a multi-laser beam surface The photoelectric conversion layer forms a roughened surface, and the step of the multi-laser beam surface roughening method comprises: generating a plurality of laser beams: generating a plurality of laser beams by laser passing through the beam splitting element; and focusing the multi-channel laser light to interfere at a point Laser light: each laser light is focused on a point through a confocal system, and each laser beam generates interference at the point to form an interference laser light; and the surface of the solar cell is roughened by interference laser light processing: The light is photoetched on the surface of the photoelectric conversion layer to form a surface having a periodic roughening.
其中,該光電轉換層之材質為以矽半導體、三五族半導體、高分子所形成的光電轉換層狀元件。The material of the photoelectric conversion layer is a photoelectric conversion layered element formed of a germanium semiconductor, a tri-five semiconductor, or a polymer.
其中,該光電轉換層之結構組成可為pn型或pin型之光電轉換結構。The structural composition of the photoelectric conversion layer may be a photoelectric conversion structure of a pn type or a pin type.
其中,該正面導電層之表面鍍製形成一抗反射層。Wherein, the surface of the front conductive layer is plated to form an anti-reflection layer.
藉此,本發明可以在太陽光電池形成週期性、高複雜度的表面形成粗化,而且其製程簡單,因此,非常適用於各種太陽能電池的表面粗化作業。Thereby, the present invention can form a rough, highly complex surface on the solar cell, and the process is simple, and therefore, it is very suitable for surface roughening of various solar cells.
請參考第一圖,其為本發明之具粗化表面的太陽能電池(10)實施例之側視層狀結構示意圖,其包含依序疊合之一背面導電層(11)、一光電轉換層(12)、一正面導電層(14)以及一封裝層(15),使用時,入射光線由該封裝層(15)之側射入,所入射的光線於該光電轉換層(12)產生電子電洞對,而進而經由該背光導電層(11)及該正面導電層(14)產生電力輸出至一負載。Please refer to the first figure, which is a side view layer structure diagram of an embodiment of a solar cell (10) having a roughened surface according to the present invention, which comprises sequentially laminating a back surface conductive layer (11) and a photoelectric conversion layer. (12) a front conductive layer (14) and an encapsulation layer (15). In use, incident light is incident from a side of the encapsulation layer (15), and the incident light generates electrons in the photoelectric conversion layer (12). The pair of holes, and in turn, generates power output to a load via the backlight conductive layer (11) and the front conductive layer (14).
該光電轉換層(12)之材質、結構及型態不限定,例如,該光電轉換層(12)可以為以矽半導體、三五族(如砷化鎵)半導體、高分子(如染料敏化太陽能電池)所形成的光電轉換層狀元件;該光電轉換層(12)之結構組成可為pn型或pin型之光電轉換結構。其中,材質為半導體的該光電轉換層(12)可以由材料的結晶特性分進一步細分,以矽半導體為例說明,其可分為結晶矽(single crystallized silicon)、多晶矽(poly-crystallized silicon)及非晶矽(amorphous silicon)。該光電轉換層(12)依據選擇的材料、結構及材料結晶狀態有所不同時,其製程方式與步驟均略有不同。以材質為非晶矽的該光電轉換層(12)為例說明,非晶矽可以利用氣象沉積(vaper deposition)的方式鍍製於任一基板上,該基板可以為金屬薄片基板、透光塑膠基板、玻璃基板、半導體基板...等,鍍製材質為非晶矽的該光電轉換層(12)之前,需先鍍製該背面導電層(11)並依據設計需求形成電極圖形製作,之後依序鍍製上該光電轉換層(12)、該正面導電層(14)。The material, structure and type of the photoelectric conversion layer (12) are not limited. For example, the photoelectric conversion layer (12) may be a germanium semiconductor, a tri-five (such as gallium arsenide) semiconductor, or a polymer (such as dye sensitization). The photoelectric conversion layered element formed by the solar cell; the structural composition of the photoelectric conversion layer (12) may be a pn-type or pin-type photoelectric conversion structure. The photoelectric conversion layer (12) made of a semiconductor can be further subdivided by the crystallization characteristics of the material, and the semiconductor can be exemplified as a single crystallized silicon, a poly-crystallized silicon, and Amorphous silicon. When the photoelectric conversion layer (12) differs depending on the selected material, structure and material crystal state, the process and steps are slightly different. Taking the photoelectric conversion layer (12) made of amorphous germanium as an example, the amorphous germanium can be plated on any substrate by means of vaper deposition, and the substrate can be a metal foil substrate or a transparent plastic. Before plating the photoelectric conversion layer (12) made of amorphous germanium on a substrate, a glass substrate, a semiconductor substrate, etc., the back surface conductive layer (11) needs to be plated first, and an electrode pattern is formed according to design requirements, and then The photoelectric conversion layer (12) and the front conductive layer (14) are sequentially plated.
為了降低該光電轉換層(12)之太陽光反射進而提升能量轉換效率,本實施例於該光電轉換層(12)之一入射面以一多雷射光束表面粗化方法(50)於該光電轉換層(12)形成粗化表面。In order to reduce the solar light reflection of the photoelectric conversion layer (12) and thereby improve the energy conversion efficiency, the present embodiment applies a multi-laser beam surface roughening method (50) to the incident surface of the photoelectric conversion layer (12). The conversion layer (12) forms a roughened surface.
請參考第二圖及第三圖,該多雷射光束表面粗化方法(50)之步驟包含:產生多道雷射光(51):採用雷射(或稱飛秒雷射)做為雷射光源產生一雷射輸出光(60),該雷射輸出光(60)經過一光學繞射元件(71)將雷射分為複數道之雷射光(62)。Referring to the second and third figures, the step of the multi-laser beam surface roughening method (50) comprises: generating multiple laser light (51): using a laser (or femtosecond laser) as a laser The light source produces a laser output light (60) that is split into a plurality of laser beams (62) by an optical diffracting element (71).
聚焦多道雷射光於一點產生干涉雷射光(53):將多道之雷射光(62)經過一共焦系統(73)(例如一共焦光學透鏡系統)將分開之該雷射光(62)聚焦於一點上,使各雷射光(62)於該點產生干涉現象而形成一干涉雷射光(65)。干涉(Interference)是波的振幅可以線性疊加(Superposition)」的一種特性,當兩道光束或多光束在空間疊加時,波的振幅隨距離或時間的變化,在疊加區域內出現穩定的強度重新分佈。本實施例採用的共焦系統(73)包含共光軸的一第一透鏡(L1)以及一第二透鏡(L2),藉由改變該共焦系統(73)之第一及第二透鏡(L1,L2)之焦距大小,即可控制其該干涉雷射光(65)之干涉條紋的週期(p)與孔洞直徑(d)大小。該干涉雷射光(65)若投射至平面,則週期(p)為p=λ/2sinθ,孔洞直徑(d)為d=λ/4sinθ,其中λ是雷射光(62)之波長,θ是雷射光(62)之相位。Focusing multiple laser light at a point to produce interference laser light (53): focusing multiple laser light (62) through a confocal system (73) (eg, a confocal optical lens system) to focus the laser light (62) separately At one point, each of the laser light (62) causes an interference phenomenon at this point to form an interference laser light (65). Interference is a characteristic that the amplitude of a wave can be superposition. When two or more beams are spatially superimposed, the amplitude of the wave changes with distance or time, and a stable intensity appears in the superimposed region. distributed. The confocal system (73) used in this embodiment includes a first lens (L1) and a second lens (L2) of the common optical axis, by changing the first and second lenses of the confocal system (73) ( The focal length of L1, L2) can control the period (p) and hole diameter (d) of the interference fringes of the interference laser light (65). If the interference laser light (65) is projected onto a plane, the period (p) is p = λ / 2 sin θ, and the hole diameter (d) is d = λ / 4 sin θ, where λ is the wavelength of the laser light (62), and θ is the Ray The phase of the light (62).
補充說明上述,使用雷射進行材料表面蝕刻,是利用材料的多光子吸收特性,造成材料的蝕刻剝蝕,因此能在許多不同材質之表面進行加工。本實施例以雷射搭配前述的多光束干涉技術能有效製作出週期性微結構表面。根據計算結果,雷射輸出光(60)經光學繞射分光後進行干涉,在形成週期性之建設性干涉的局部的能量強度是增加的,而且,利用不同道數的雷射光(62)以及調控各雷射光(62)之相位等,即可由於強度增加所以有利於蝕刻製作粗化表面微結構。In addition, the above-mentioned laser surface etching using a laser utilizes the multiphoton absorption property of the material to cause etching and erosion of the material, so that it can be processed on the surface of many different materials. In this embodiment, the periodic microstructured surface can be effectively fabricated by laser matching with the aforementioned multi-beam interference technique. According to the calculation result, the laser output light (60) is interfered by optical diffraction, and the local energy intensity in the formation of periodic constructive interference is increased, and the laser light of different numbers (62) is utilized. By adjusting the phase of each of the laser light (62), it is advantageous to etch the roughened surface microstructure due to the increase in strength.
進一步地,透過調整該雷射光(62)之相位關係,可以讓形成之該干涉雷射光(65)之干涉花紋及強度分佈有所差異,因此,除了前述可以透過決定雷射光(62)之數量、位置佈局之調整改變該干涉雷射光(65)之干涉花紋之外,也可以選擇調整各雷射光(62)之相位差異達到調整該干涉雷射光(65)之光形(干涉花紋)的技術效果。Further, by adjusting the phase relationship of the laser light (62), the interference pattern and the intensity distribution of the interference laser light (65) formed may be different, and therefore, in addition to the foregoing, the number of laser light (62) can be determined. The adjustment of the position layout changes the interference pattern of the interference laser light (65), and the phase difference of each laser light (62) can be selected to adjust the light shape (interference pattern) of the interference laser light (65). effect.
以干涉雷射光加工粗化太陽能電池表面(55):以該干涉雷射光(65)入射該具粗化表面的太陽能電池(10)之內部結構之表面進行光蝕刻,使該具粗化表面的太陽能電池(10)之光入射面形成粗化。舉例說明之,以該干涉雷射光(65)讓該光電轉換層(12)形成粗化且具週期性的表面結構,達到減低該光電轉換層(12)表面反射性之技術效果。以材質為非晶矽的光電轉換層(12)為例說明,該光電轉換層(12)之結構假設為pn型之光電轉換元件,其包含一p型半導體層以及一n型半導體層。為了在該光電轉換層(12)形成具備週期性、奈米級的粗化表面結構,可以完成鍍製該p型半導體層之後,即使用該多雷射光束表面粗化方法(50)光蝕刻該p型半導體層以形成表面結構型態之改變,之後,在於該p型半導體層粗化後的表面鍍製該n型半導體,最後鍍製該正面導電層(14),如此,即可以該多雷射光束表面粗化方法(50)讓該光電轉換層(12)形成表面粗化的結構。The surface of the solar cell is roughened by interference laser light processing (55): photolithography is performed on the surface of the internal structure of the solar cell (10) having the roughened surface by the interference laser light (65), so that the roughened surface is The light incident surface of the solar cell (10) is roughened. By way of example, the interference conversion light (65) allows the photoelectric conversion layer (12) to form a roughened and periodic surface structure, thereby achieving the technical effect of reducing the surface reflectivity of the photoelectric conversion layer (12). Taking the photoelectric conversion layer (12) made of amorphous germanium as an example, the structure of the photoelectric conversion layer (12) is assumed to be a pn-type photoelectric conversion element including a p-type semiconductor layer and an n-type semiconductor layer. In order to form a roughened surface structure having a periodic, nano-scale on the photoelectric conversion layer (12), after the p-type semiconductor layer is plated, the multi-laser beam surface roughening method (50) is used for photolithography. The p-type semiconductor layer is changed to form a surface structure pattern, and then the n-type semiconductor is plated on the surface after the p-type semiconductor layer is roughened, and finally the front conductive layer (14) is plated. The multi-laser beam surface roughening method (50) allows the photoelectric conversion layer (12) to form a surface roughened structure.
進一步地,為了更進一步地降低該具粗化表面的太陽能電池(10)之表面反射率,可於鍍製該正面導電層(14)之後,再鍍製一抗反射層,形成該抗反射層之製成方法可以為物理或化學氣相沉積製成完成。Further, in order to further reduce the surface reflectance of the solar cell (10) having the roughened surface, after the front conductive layer (14) is plated, an anti-reflection layer may be further plated to form the anti-reflection layer. The method of fabrication can be accomplished by physical or chemical vapor deposition.
進一步地,為了增強該具粗化表面的太陽能電池(10)之穩定性,可於該抗反射層之上再鍍製一耐水抗氧化鍍層。Further, in order to enhance the stability of the solar cell (10) having the roughened surface, a water-resistant and anti-oxidation coating may be further plated on the anti-reflection layer.
請參考第四圖,其為本實施例材質為矽之該光電轉換層(12)以該多雷射光束表面粗化方法(50)經不同道數的雷射光(62)產生干涉雷射光(65)進行表面粗化後的光反射率量測結果,由該圖可知本實施例所提的製程方法確實可以顯著提升該具粗化表面的太陽能電池(10)之光入射面的抗反射效果。Please refer to the fourth figure, which is the photoelectric conversion layer (12) of the present embodiment, wherein the multi-laser beam surface roughening method (50) generates interference laser light through different numbers of laser light (62) ( 65) The result of measuring the light reflectance after surface roughening, it can be seen from the figure that the process method proposed in the embodiment can significantly improve the anti-reflection effect of the light incident surface of the solar cell (10) having the roughened surface. .
(10)‧‧‧太陽能電池(10)‧‧‧ solar cells
(11)‧‧‧背面導電層(11)‧‧‧ Back conductive layer
(12)‧‧‧光電轉換層(12) ‧‧‧ photoelectric conversion layer
(14)‧‧‧正面導電層(14) ‧‧‧ front conductive layer
(15)‧‧‧封裝層(15)‧‧‧Encapsulation layer
(50)‧‧‧表面粗化方法(50) ‧‧‧ Surface roughening method
(51)‧‧‧產生多道雷射光(51) ‧‧‧Multiple laser light
(53)‧‧‧聚焦多道雷射光於一點產生干涉雷射光(53) ‧ ‧ Focus on multiple lasers at a point to produce interference laser light
(55)‧‧‧以干涉雷射光加工粗化太陽能電池表面(55) ‧‧‧Making the surface of roughened solar cells by interference laser light processing
(60)‧‧‧雷射輸出光(60)‧‧‧Laser output light
(62)‧‧‧雷射光(62)‧‧‧Laser light
(65)‧‧‧干涉雷射光(65) ‧ ‧ Interfering with laser light
(71)‧‧‧光學繞射元件(71)‧‧‧Optical diffractive components
(73)‧‧‧共焦系統(73)‧‧‧Confocal system
(L1)‧‧‧第一透鏡(L1)‧‧‧First lens
(L2)‧‧‧第二透鏡(L2)‧‧‧second lens
第一圖為本發明之具粗化表面的太陽能電池實施例之層狀示意圖。The first figure is a layered schematic view of an embodiment of a solar cell with a roughened surface of the present invention.
第二圖為本發明之多雷射光束表面粗化方法之流程圖。The second figure is a flow chart of the method for roughening the surface of a plurality of laser beams according to the present invention.
第三圖為本發明之多雷射光束表面粗化方法之光學路徑設計示意圖。The third figure is a schematic diagram of the optical path design of the method for roughening the surface of a plurality of laser beams according to the present invention.
第四圖為本發明之具粗化表面的太陽能電池之光反射量測結果圖。The fourth figure is a graph showing the results of light reflection measurement of the solar cell with a roughened surface of the present invention.
附件:annex:
圖一至七為本發明之多雷射光干涉花紋的強度分佈參考圖。Figures 1 to 7 are reference diagrams showing the intensity distribution of the multiple laser light interference patterns of the present invention.
(50)...表面粗化方法(50). . . Surface roughening method
(51)...產生多道雷射光(51). . . Produce multiple lasers
(53)...聚焦多道雷射光於一點產生干涉雷射光(53). . . Focusing on multiple lasers at a point to produce interference with laser light
(55)...以干涉雷射光加工粗化太陽能電池表面(55). . . Roughening solar cell surface by interference laser processing
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US6340640B1 (en) * | 1997-04-23 | 2002-01-22 | Mitsubishi Denki Kabushiki Kaisha | Solar cell, a method of producing the same and a semiconductor producing apparatus |
US6451218B1 (en) * | 1998-03-18 | 2002-09-17 | Siemens Solar Gmbh | Method for the wet chemical pyramidal texture etching of silicon surfaces |
JP4010053B2 (en) * | 1998-04-15 | 2007-11-21 | 旭硝子株式会社 | Cover glass for solar cell, method for producing the same, and solar cell |
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