TWI375336B - Radiation emitting device with a conversion element - Google Patents
Radiation emitting device with a conversion element Download PDFInfo
- Publication number
- TWI375336B TWI375336B TW097129092A TW97129092A TWI375336B TW I375336 B TWI375336 B TW I375336B TW 097129092 A TW097129092 A TW 097129092A TW 97129092 A TW97129092 A TW 97129092A TW I375336 B TWI375336 B TW I375336B
- Authority
- TW
- Taiwan
- Prior art keywords
- conversion
- radiation
- conversion layer
- layer
- conversion element
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 113
- 230000005855 radiation Effects 0.000 title claims description 38
- 238000007493 shaping process Methods 0.000 claims description 5
- 238000012937 correction Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims 1
- 238000002211 ultraviolet spectrum Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 241000282320 Panthera leo Species 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000219112 Cucumis Species 0.000 description 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 1
- 241000669298 Pseudaulacaspis pentagona Species 0.000 description 1
- 206010039740 Screaming Diseases 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 235000021438 curry Nutrition 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010412 perfusion Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007046612 | 2007-09-28 | ||
DE102007057710.0A DE102007057710B4 (de) | 2007-09-28 | 2007-11-30 | Strahlungsemittierendes Bauelement mit Konversionselement |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200915622A TW200915622A (en) | 2009-04-01 |
TWI375336B true TWI375336B (en) | 2012-10-21 |
Family
ID=40418253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097129092A TWI375336B (en) | 2007-09-28 | 2008-07-31 | Radiation emitting device with a conversion element |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102007057710B4 (de) |
TW (1) | TWI375336B (de) |
WO (1) | WO2009039801A1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010035490A1 (de) | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements |
DE102010053362B4 (de) | 2010-12-03 | 2021-09-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement |
US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
DE102011050450A1 (de) | 2011-05-18 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102011118290A1 (de) * | 2011-11-10 | 2013-05-16 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement |
WO2013153511A1 (en) * | 2012-04-13 | 2013-10-17 | Koninklijke Philips N.V. | A light conversion assembly, a lamp and a luminaire |
DE102012222475A1 (de) | 2012-12-06 | 2014-06-12 | Osram Gmbh | Leuchtdiode aufweisend mehrere leuchtstoffbereiche |
DE102013218451A1 (de) * | 2013-09-14 | 2015-03-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Konversionselement für ein optisches oder optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102017117488A1 (de) * | 2017-08-02 | 2019-02-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
WO2019120309A1 (zh) * | 2017-12-22 | 2019-06-27 | 海迪科(南通)光电科技有限公司 | 一种晶圆级芯片级csp封装结构及其制备方法 |
JP7043002B2 (ja) * | 2018-03-15 | 2022-03-29 | 豊田合成株式会社 | 発光装置 |
WO2019219095A1 (zh) * | 2018-05-17 | 2019-11-21 | 海迪科(南通)光电科技有限公司 | 一种利用wlp的集成式led封装形式及其制备方法 |
CN110610928A (zh) * | 2018-06-15 | 2019-12-24 | 海迪科(南通)光电科技有限公司 | 一种利用wlp的集成式led封装形式及其制备方法 |
DE102018119462A1 (de) * | 2018-08-09 | 2020-02-13 | Osram Opto Semiconductors Gmbh | Sichtbares licht und ir-strahlung emittierendes optoelektronisches bauelement |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BRPI9715293B1 (pt) | 1996-06-26 | 2016-11-01 | Osram Ag | elemento de cobertura para um elemento de construção optoeletrônico |
DE19625622A1 (de) * | 1996-06-26 | 1998-01-02 | Siemens Ag | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
AU7617800A (en) * | 1999-09-27 | 2001-04-30 | Lumileds Lighting U.S., Llc | A light emitting diode device that produces white light by performing complete phosphor conversion |
DE10010638A1 (de) | 2000-03-03 | 2001-09-13 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement |
CN100430456C (zh) * | 2002-03-22 | 2008-11-05 | 日亚化学工业株式会社 | 氮化物荧光体,其制造方法及发光装置 |
ATE421169T1 (de) * | 2002-06-13 | 2009-01-15 | Cree Inc | Halbleiter-strahlungsquelle mit gesättigtem phosphor |
MY149573A (en) * | 2002-10-16 | 2013-09-13 | Nichia Corp | Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor |
DE10261428B8 (de) * | 2002-12-30 | 2012-09-20 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiter-Bauelement mit mehrfachen Lumineszenz-Konversionselementen |
KR100691143B1 (ko) * | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | 다층 형광층을 가진 발광 다이오드 소자 |
DE10351349A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Hestellen eines Lumineszenzdiodenchips |
DE10351397A1 (de) * | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
JP2005191420A (ja) * | 2003-12-26 | 2005-07-14 | Stanley Electric Co Ltd | 波長変換層を有する半導体発光装置およびその製造方法 |
US8040039B2 (en) * | 2004-03-18 | 2011-10-18 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for emitting composite output light using multiple wavelength-conversion mechanisms |
TW200614548A (en) * | 2004-07-09 | 2006-05-01 | Matsushita Electric Ind Co Ltd | Light-emitting device |
DE102005046420B4 (de) * | 2004-10-04 | 2019-07-11 | Stanley Electric Co. Ltd. | Verfahren zur Herstellung einer Licht emittierenden Halbleitervorrichtung |
JP5196711B2 (ja) * | 2005-07-26 | 2013-05-15 | 京セラ株式会社 | 発光装置およびそれを用いた照明装置 |
JP3979424B2 (ja) * | 2005-09-09 | 2007-09-19 | 松下電工株式会社 | 発光装置 |
JP2007080880A (ja) * | 2005-09-09 | 2007-03-29 | Matsushita Electric Works Ltd | 発光装置 |
US20070128745A1 (en) | 2005-12-01 | 2007-06-07 | Brukilacchio Thomas J | Phosphor deposition method and apparatus for making light emitting diodes |
JP4771800B2 (ja) * | 2005-12-02 | 2011-09-14 | スタンレー電気株式会社 | 半導体発光装置及びその製造方法 |
JP4838005B2 (ja) * | 2006-02-20 | 2011-12-14 | 京セラ株式会社 | 発光装置 |
JP4931628B2 (ja) * | 2006-03-09 | 2012-05-16 | セイコーインスツル株式会社 | 照明装置及びこれを備える表示装置 |
JP4353196B2 (ja) * | 2006-03-10 | 2009-10-28 | パナソニック電工株式会社 | 発光装置 |
-
2007
- 2007-11-30 DE DE102007057710.0A patent/DE102007057710B4/de active Active
-
2008
- 2008-07-30 WO PCT/DE2008/001255 patent/WO2009039801A1/de active Application Filing
- 2008-07-31 TW TW097129092A patent/TWI375336B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW200915622A (en) | 2009-04-01 |
DE102007057710B4 (de) | 2024-03-14 |
DE102007057710A1 (de) | 2009-04-09 |
WO2009039801A1 (de) | 2009-04-02 |
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